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BSP88H6327XTSA1
Power MOSFET, N Channel, 240 V, 350 mA, 4 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:240V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 240V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 350mA
- Drain Source On State Resistance: 4ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.138 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSP88** _**Rev. 2. 2**_ ## **SIPMOS Small-Signal-Transistor** **Product Summary** _V_ DS 240 V ee ee _R_ 6 |e DS(on) | |ft _I_ D 0.35 A **Feature** . N-Channel . Enhancement mode . Logic Level ° d _v_ /d _t_ rated **==> picture [489 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||| |---|---|---|---|---|---|---| |°|d|v|/d|t|rated|PG-SOT223| |Drain| |•|[[Pb-free lead plating; RoHS compliant]]|4| |•|2.8V rated|[[Pb-free lead plating; RoHS compliant]]|in]|pin 2,4 EeES|3| |°| |Qualified according to AEC Q101|Gate|LE|2| |°|(|QELA| |•|Halogenfree according to IEC61249221|1|VPS05163| |Z=-~|RoHS|pins| |(GS|Halogen-Free|fect *|S/| |Type|Package|Tape and Reel Information|Marking|Packaging| |BSP88|PG-SOT223|H|6327:|1000 pcs/reel|BSP88|Non dry| **----- End of picture text -----**<br> - [[Pb-free lead plating; RoHS compliant]] - 2.8V rated[[Pb-free lead plating; RoHS compliant]] ## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified **==> picture [485 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Parameter|||Symbol|Value|Unit| |Continuous drain current|I|D|A| |T|A=25°C|0.35| |T|A=70°C|0.28| |Pulsed drain current|I|1.4| |D puls| |T|A=25°C| |Reverse diode d|v|/d|t|d|v|/d|t|6|kV/µs| |I|S=0.35A,|V|DS=192V, d|i|/d|t|=200A/µs,|T|jmax=150°C| |Gate source voltage|a|V|GS|±20|V| |ESD class (JESD22-A114-HBM)|||1A (>250V, <500V)| |Power dissipation|P|tot|1.8|W| |T|A=25°C| |Operating and storage temperature|||T|j|,|T|stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|||55/150/56| **----- End of picture text -----**<br> 20 12 - 11 - 29 Page 1 **BSP88** _**Rev. 2. 2**_ |**Thermal Characteristics**|||||| |---|---|---|---|---|---| |**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>~~ee~~<br>~~ee~~|||||| |Thermal resistance, junction - soldering point|_R_thJS|-|-|25|K/W| |(Pin 4)|||||| |SMD version, device on PCB:|_R_thJA||||| |@ min. footprint||-|-|115|| |@ 6 cm2cooling area1)||-|-|70|| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=250µA<br>|<br>||_V_(BR)DSS<br>|<br>|<br>|||240<br>tt<br>fT|-<br>tt<br>fT|-<br>tt<br>|V| |---|---|---|---|---|---| |Gate threshold voltage,_V_GS=_V_DS<br>_I_D=108µA<br>|<br>||_V_GS(th)<br>|<br>|<br>|||0.6<br>tt<br>fT|1<br>tt<br>fT||1.4<br>tt<br>||| |Zero gate voltage drain current<br>_V_DS=240V,_V_GS=0,_T_j=25°C<br>_V_DS=240V,_V_GS=0,_T_j=150°C<br>|<br>||_I_DSS<br>| |<br>ttt<br>|<br>||-<br>-<br>fT<br>ttt<br>tt|-<br>-<br>fT<br>ttt<br>tt|0.1<br>10<br><br>ttt<br>tt|µA| |Gate-source leakage current<br>_V_GS=20V,_V_DS=0<br>|<br>||_I_GSS<br>|<br>|<br>|<br>||-<br>tt<br>i|1<br>tt<br>||10<br>tt|nA<br>i| |Drain-source on-state resistance<br>_V_GS=2.8V,_I_D=0.014A<br>|<br>|<br>||_R_DS(on)<br>|<br>|<br>|<br>|<br>|<br>||-<br>tt<br>i<br>tt|4.9<br>tt<br>|<br>tt|15<br>tt<br>tt|i| |Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=0.32A<br>|<br>|<br>_|_R_DS(on)<br>|<br>|<br>|<br>|<br>_<br>||-<br>i<br>tt<br>tt|4.6<br>|<br>tt<br>tt|7.5<br>tt<br>tt|| |Drain-source on-state resistance<br>_V_GS=10V,_I_D=0.35A<br>|<br>_|_R_DS(on)<br>|<br>|<br>_<br>||-<br>tt<br>tt|4<br>tt<br>tt|6<br>tt<br>tt|| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 20 12 - 11 - 29 Page 2 **BSP88** _**Rev. 2. 2**_ |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~| |---|---|---|---|---|---|---|---|---|---| |**Dynamic Characteristics**|||||||||| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance|_g_fs<br>_V_DS 2*_I_D*_R_DS(on)max,<br>_I_D=0.28A<br>0.19<br>0.38<br>-<br>_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>76<br>95<br>_C_oss<br>-<br>12<br>15<br>_C_rss<br>-<br>6<br>9<br>jttt<br>=<br>ee||||||||S<br>pF| |Turn-on delay time<br>Rise time|_t_d(on)<br>_V_DD=120V,_V_GS=4.5V,<br>_I_D=0.35A,_R_G=15<br>-<br>3.6<br>5.4<br>_t_r<br>-<br>3.5<br>5.2<br>SE||||||||ns| |Turn-off delay time<br>Fall time|_t_d(off)<br>-<br>17.9<br>26.8<br>_t_f<br>-<br>18.9<br>28.3<br>=||||||||| |**Gate Charge Characteristics**|||||||||| |Gate to source charge|||_Q_gs||_V_DD=192V,_I_D=0.35A|-|0.2|0.3|nC| |Gate to drain charge|||_Q_gd|||-|2|3|| |Gate charge total|||_Q_g||_V_DD=192V,_I_D=0.35A,|-|4.5|6.8|| ||||||_V_GS=0 to 10V||||| |Gate plateau voltage|||_V_(plateau)||_V_DD=192V,_I_D= 0.35 A|-|2.7|-|V| |**Reverse Diode**|||||||||| |Inverse diode continuous|||_I_S||_T_A=25°C|-|-|0.35|A| |forward current|||||||||| |Inv. diode direct current, pulsed|||_I_SM|||-|-|1.4|| |Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=_I_S|-|0.86|1.2|V| |Reverse recovery time|||_t_rr||_V_R=120V,_I_F=_l_S,|-|66|82|ns| |Reverse recovery charge|||_Q_rr||d_i_F/d_t_=100A/µs|-|119|149|nC| 20 12 - 11 - 29 Page 3 **BSP88** _**Rev. 2. 2**_ ## **1 Power dissipation** _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: _V_ GS > 10 V **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSP88<br>1.9<br>W S ERRE<br>PLING TT Et TT tt TT<br>1.6 PEPIN TTT tt ty TT<br>BERRNEEEEEEeEeee<br>1.4 PETPET PINT TT IN EyTTTT eyyt TtTT<br>1.2 SEER RENERReeeeee<br>Pte Tt TPA TT Ey TT<br>1 PTT TTT PIN | Tey TT<br>SERRE RE NEE<br>0.8 PET TT TT PA ET TT<br>Pt tt TPT IN TT ty TT<br>0.6 Pte Tt TT Et A PT TT<br>Pte Tt TT ey TAT TT TT<br>0.4 PET TT TT ey TIN TTT<br>Pt tt TTT TN TTT<br>0.2 SERRE EReEeee Nee<br>Pte Tt TT et TTA ET<br>0 LTT TTT Tit tT ttt tN J<br>0 20 40 60 80 100 120 °C 160<br>TA<br>tot<br>P<br>**----- End of picture text -----**<br> ## **3 Safe operating area** ## _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C **==> picture [231 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1 BSP88<br>A<br>t p = 160.0µs<br>10 0 Cott St i<br> 1 ms<br>a 2 6<br>10 -1 10 ms<br>i <<br>10 -2<br>TN<br>DC<br>a<br>10 -3 LEI TEE TEI<br>10 [0] 10 [1] 10 [2] V 10 [3]<br>V DS<br>/ I D<br>DS<br>= V<br>I D R DS(on)<br>**----- End of picture text -----**<br> **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSP88<br>0.38<br>A Pt yt ety Tey TT yy<br>aN ET<br>0.32 PET ING TPP Tt tt<br>SERERNEEEEEeeee<br>0.28 PtPLTtTtT PTEPPT NEENETEET<br>0.24 PEt TT TTP NET<br>PLU tT Pty TP NET TTT<br>0.2 Pte tT ety TPP NE TTT<br>Pte tT ety Tt yy NE TTT<br>0.16 PLT ETT TTT TAT TT<br>Pt tt ttt PT IN TT<br>0.12 Piet ety Tey TT AE TY<br>Pte tT ety Tt yy TN TY<br>0.08 PLT T Ett TPP TT TAT<br>Pt tt tT tty TT<br>0.04 Piet ety Te yy ty Ty<br>Pt tT ety Tey TT tty<br>0 FT TT ETT Titty ttt tt<br>0 20 40 60 80 100 120 °C 160<br>TA<br>I D<br>**----- End of picture text -----**<br> ## **4 Transient thermal impedance** _Z_ thJA = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [231 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2 BSP88<br>K/W<br>10 1 mnt a<br>ASU SU A<br>10 0<br>D = 0.50<br>0.20<br>ee 0.10<br>0.05<br>10 -1 single pulse<br>L e 0.02<br>A ee<br>0.01<br>0 0<br>10 -2 CTT TCT MU<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] s 10 [4]<br>t<br>—_r p<br>thJA<br>Z<br>**----- End of picture text -----**<br> 20 12 - 11 - 29 Page 4 **BSP88** _**Rev. 2. 2**_ ## **6 Typ. drain-source on resistance** ## **5 Typ. output characteristic** ## _I_ D = _f_ ( _V_ DS) _R_ DS(on) = _f_ ( _I_ D) parameter: _T_ j = 25 °C, _V_ GS parameter: _T_ j = 25 °C, _V_ GS **==> picture [483 x 600] intentionally omitted <==** **----- Start of picture text -----**<br> 0.64 9<br>3.4V 2.6V 3.2V<br>A 3.2V 3.8V<br>3.4V 4.4V<br>Sfp pr<br>3.8V 5V<br>4V 7 6V<br>0.48 4.4V 7V<br>5V 10V<br>Wy 6 SSAC<br>6V<br>0.4<br>7V<br>10V 2.6V 5<br>0.32<br>4<br>f-- ——<br>0.24<br>3<br>0.16<br>2<br>0.08<br>1<br>JA<br>0 0<br>0 0.5 1 1.5 2 2.5 3 V 4 0 0.08 0.16 0.24 0.32 0.4 0.48 A 0.64<br>V DS I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); ); V DS 2 x I D x x R DS(on)max g fs = f( I D)<br>parameter: T j = 25 °C = 25 °C parameter: T j = 25 °C<br>0.64 0.6<br>A TT<br>S<br>0.48<br>PCPA ia<br>0.4<br>0.4 GAUERUGQUOPAEE oa<br>0.32 0.3<br>0.24<br>MO HEYA Ane<br>0.2<br>0.16<br>GAAAAAN/ AIE EE TAT<br>0.1<br>0.08<br>AT)<br>0 roe CLL 0 LE<br>0 0.5 1 1.5 2 2.5 V 3.5 0 0.08 0.16 0.24 0.32 0.4 0.48 A 0.64<br>V GS I D<br>DS(on)<br>I D R<br>fs<br>I D g<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D== _f_ ( _V_ GS ); ); _V_ DS 2 x _I_ D x x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C 20 12 - 11 - 29 Page 5 **BSP88** _**Rev. 2. 2**_ ## **9 Drain-source on-state resistance** _R_ DS(on) = _f_ ( _T_ j) parameter : _I_ D = 0.35 A, _V_ GS = 10 V ## **10 Typ. gate threshold voltage** ## _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS; _I_ D = 108 µA **==> picture [482 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> BSP88<br>30 1.8<br>V<br>e POPC EEE TTT TTT.<br>FCEEEEEE EL -<br>98%<br>24 FPP Pak<br>1.4<br>22 PTT | dT td<br>20 ECEEEEEEEttt EEL LeeLE EL 1.2 yy| pk<br>typ.<br>18<br>FCEEEEEL ELLA PTA PS<br>1<br>16 FCEEEE EEE Ny<br>14<br>0.8<br>12<br>2%<br>t FCEE C CL A t P } | SS|MTT<br>10 POPP 0.6 ~ ™™<br>8 98%<br>SanaFOC eTae 0.4 LENE~<br>6<br>4 typ<br>0.2<br>Seer LEE LLL<br>2<br>ECE PLL ELELELL<br>0 FLCEEEELELLA 0 EL<br>-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160<br>T T<br>—_ j —_ j<br>DS(on) GS(th)<br>R V<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** ## _C_ = _f_ ( _V_ DS) ## parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C **==> picture [225 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3<br>oe<br>pF<br>——<br>KF<br>Ciss<br>10 2<br>\<br>an SE<br>Coss<br>| 10 1 — S e<br>O N E<br>—————a Crss<br>a ee ee ee eee<br>10 0 P| | | f| ff<br>0 5 10 15 20 V 30<br>V DS<br>C<br>**----- End of picture text -----**<br> ## **12 Forward character. of reverse diode** ## _I_ F = _f_ (VSD) parameter: _T_ j **==> picture [222 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1 BSP88<br>S SS<br>A<br>——— ooo<br>PTET TEE Pe Ey yy<br>10 0<br>ye<br>fff<br>10 -1 Pit VIAAT TT TT tT<br>ft GYATTe<br>T j = 25 °C typ<br>SHE T j = 150 °C typ ===<br>AR T j = 25 °C (98%) i<br>T j = 150 °C (98%)<br>— PF. nae<br>10 -2 atin LL<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>V SD<br>I F<br>**----- End of picture text -----**<br> 20 12 - 11 - 29 Page 6 **BSP88** _**Rev. 2. 2**_ **==> picture [484 x 324] intentionally omitted <==** **----- Start of picture text -----**<br> 13 Typ. gate charge 14 Drain-source breakdown voltage<br>V GS = f ( Q G); parameter: V DS , V (BR)DSS = f ( T j)<br>I D = 0.35 A pulsed, T j = 25 °C<br>BSP88 BSP88<br>16 291<br>| | V |<br>V |ae HH coe<br>276<br>rt<br>12 ine<br>271<br>HE<br>266<br>10<br>261<br>Hn<br>256<br>8 0.2 V DS max<br>251<br>0.5 V DS max<br>246<br>6<br>| [i] 0.8 V DS max [f][f] Hap<br>241<br>ay<br>236<br>4<br>: [f] 231 ie<br>2 iit 226 a<br>221<br>/y c‘aeoL e t aceeatHnFat e Ft e -<br>0 216<br>0 1 2 3 4 5 nC 7 -60 -20 20 60 100 °C 180<br>: Q G —_ > T j<br>GS (BR)DSS<br>V V<br>**----- End of picture text -----**<br> 20 12 - 11 - 29 Page 7 **BSP88** ## _**Rev. 2. 2**_ 20 12 - 11 - 29 Page 8
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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