BSP75GTA

**BSP75G-13** TT 

**60V SELF-PROTECTED LOW-SIDE IntelliFET MOSFET SWITCH** 

## **Product Summary** 

- Continuous Drain-Source Voltage: VDS = 60V 

- On-State Resistance: 550mΩ 

- Nominal Load Current (VIN = 5V): 1.4A 

- Clamping Energy: 550mJ 

## **Features and Benefits** 

- Short-Circuit Protection with Auto Restart 

- Overvoltage Protection (Active Clamp) 

- Thermal Shutdown with Auto Restart 

- Overcurrent Protection 

- Input Protection (ESD) 

## **Description** 

The BSP75G-13 is a self-protected low-side IntelliFET[®] MOSFET. It features monolithic overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. It is intended as a general-purpose switch. 

## **Applications** 

- Especially suited for loads with a high inrush current such as lamps and motors 

- All types of resistive, inductive and capacitive loads in switching applications 

- μC compatible power switches for 12V and 24V DC applications 

- Replaces electromechanical relays and discrete circuits 

- Linear mode capabilities - the current-limiting protection circuitry is designed to de-activate at low VDS in order not to compromise the load current during normal operation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. 

- Load Dump Protection (Actively Protects Load) 

- Logic-Level Input 

- High Continuous Current Rating 

- **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/** 

## **Mechanical Data** 

- Package: SOT223 

- Package Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020 

- Terminals: Matte Tin Finish **e3** 

- Weight: 0.112 grams (Approximate) 

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SOT223<br>Top View<br>**----- End of picture text -----**<br>


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Top View<br>Pin Out<br>**----- End of picture text -----**<br>


Note: The tab is connected to the drain pin, and must be electrically isolated from the source pin. Connection of significant copper to the tab is recommended for best thermal performance. 

## **Ordering Information** (Note 4) 

|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|**Ordering Informationg Information Information** (Note 4)|
|---|---|---|---|---|---|---|
||||||||
|**Part Number**|**Package**|**Marking**|**Reel Size (inches)**|**Tape Width (mm)**|**Packing**||
||||||**Qty. **|**Carrier**|
|BSP75G-13|SOT223|BSP75G|13|12|4,000 Units|Reel|



- Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 

   2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 

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BSP75G-13 Document number: DS45989 Rev. 2 - 2 

January 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. 

**BSP75G-13** 

## **Marking Information** 

BSP75G = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 4 = 2024) ~~;~~ WW or WW = Week Code (01 to 53) 

## **Functional Block Diagram** 

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Overvoltage<br>Protection<br>|<br>dV/dt<br>Limitation<br>Overtemperature<br>Human  Protection<br>Body ESD  ==<br>Protection  Logic<br>Overcurrent<br>Protection<br>——L-<br>**----- End of picture text -----**<br>


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BSP75G-13 Document number: DS45989 Rev. 2 - 2 

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**BSP75G-13** 

**Absolute Maximum Ratings** (@TA = +25°C, unless otherwise stated.) 

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||||||||
|---|---|---|---|---|---|---|
|GG|Parameter|Symbol|Value|Unit|
|Ge|Continuous Drain-Source Voltage|VDS|GO|60|V|
|GC|Drain-Source Voltage for Short-Circuit Protection, VIN = 5V|VDS(SC)|36|V|
|Ge|Continuous Input Voltage|VIN|GO|-0.2 to +10|V|
|GC|Peak Input Voltage|VIN|-0.2 to +20|V|
|OG|Operating Temperature Range|TJ|-40 to +150|°C|
|Ge|Storage Temperature Range|TSTG|GO|-55 to +150|°C|
|GC|Power Dissipation at TA|= +25°C (Note 5)|PD|2.5|W|
|Ge|Continuous Drain Current @ VIN = 10V; TA|= +25°C (Note 5)|ID|GO|1.6|A|
|GC|Continuous Drain Current @ VIN = 5V; TA|= +25°C (Note 5)|ID|1.4|A|
|Ge|Pulsed Drain Current @ VIN = 10V|IDM|GO|5|A|
|Ge|Continuous Source Current (Body Diode)|(Note 5)|IS|Ge|3|A|
|GG|Pulsed Source Current (Body Diode)|IS|5|A|
|Ge|Unclamped Single Pulse Inductive Energy|EAS|GO|550|mJ|
|GG|Load Dump Protection|VLOAD_DUMP|80|V|
|Ge|Electrostatic Discharge (Human Body Model)|VESD|Ce|4000|V|
|DIN Humidity Category, DIN 40 040|—|E|—|
|IEC Climatic Category, DIN IEC 68-1|—|40/150/56|—|

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## **Thermal Resistance** 

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|||||
|---|---|---|---|
|Characteristic|Symbol|Value|Unit|
|Junction to Ambient (Note 5)|RθJA|50|°C/W|
|Junction to Ambient (Note 6)|RθJA|24|°C/W|
|Junction to Ambient (Note 7)|RθJA|208|°C/W|

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Notes: 5. For a device surface-mounted on 37mm x 37mm x 1.6mm FR-4 board with a high coverage of single sided 2oz weight copper. 

6. For a device surface-mounted on FR-4 board and measured at t ≤ 10s. 

7. For a device mounted on FR-4 board with the minimum copper required for electrical connections. 

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BSP75G-13 Document number: DS45989 Rev. 2 - 2 

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**BSP75G-13** 

**Electrical Characteristics** (@TA = +25°C, unless otherwise stated.) 

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||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Min|Typ|Max|Unit|Conditions|
|pO|
|Static Characteristics|
|——————————————|Drain-Source Clamp Voltage|VDS(AZ)|60|70|75|V|ID = 10mA|
|Off-State Drain Current|IDSS|—|0.1|3|μA|VDS = 12V, VIN = 0V|
|————|Off-State Drain Current|IDSS|—|3|15|μA|VDS = 32V, VIN = 0V|
|Input Threshold Voltage (Note 8)|VIN(TH)|1|2.1|—|V|VDS = VGS, ID = 1mA|
|———————————|Input Current|IIN|—|0.7|1.2|mA|VIN = 5V|
|Input Current|IIN|—|1.5|2.7|mA|VIN = 7V|
|——————————|Input Current|IIN|—|4|7|mA|VIN = 10V|
|Static Drain-Source On-State Resistance|RDS(ON)|—|520|675|mΩ|VIN = 5V, ID = 0.7A|
|——————————|Static Drain-Source On-State Resistance|RDS(ON)|—|385|550|mΩ|VIN = 10V, ID = 0.7A|
|Current Limit (Note 9)|ID(LIM)|0.7|1.1|1.75|A|VIN = 5V, VDS > 5V|
|a|Current Limit (Note 9)|ID(LIM)|2|3|4|A|VIN = 10V, VDS > 5V|
|Dynamic Characteristics|a|
|Turn-On Time (VIN to 90% ID)|tON|—|2.2|—|μs|RL = 22Ω, VIN = 0 to 10V, VDD = 12V|
|—————————————|Turn-Off Time (VIN|to 90% ID)|tOFF|—|13|—|μs|RL = 22Ω, VIN = 10V to 0V, VDD = 12V|
|Slew Rate On (70 to 50% VDD)|-dVDS/dtON|—|10|—|V/μs|RL = 22Ω, VIN = 0 to 10V, VDD = 12V|
|Slew Rate Off (50 to 70% VDD)|dVDS/dtON|—|3.2|—|V/μs|RL = 22Ω, VIN = 10V to 0V, VDD = 12V|
|Protection Functions|(Note 10)|
|Minimum Input Voltage for|VPROT|4.5|—|—|V|—|
|ee|OThermal Overload Trivertemperature Protectp Temionperature|TJT|+150|+175|sO|—|°C|—|
|——————————————|Thermal Hysteresis|—|—|+10|—|°C|—|
|Unclamped Single Pulse Inductive|
|a|EnerUnclamped Single Pulse Inductive gy TJ = +25°C|E|ee|AS|550|—|—|mJ|ID(ISO) = 0.7A, VDD = 32V|
|ee|Ener|Inverse Diode|gy TJ = +150°C|E|es|AS|200|ee|—|—|mJ|ID(ISO) = 0.7A, VDD = 32V|
|———————|Source-Drain Voltage|VSD|—|—|1|V|VIN = 0V, -ID = 1.4A|

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Notes: 8. Protection features may operate outside spec for VIN < 4.5V. 9. The drain current is limited to a reduced value when VDS exceeds a safe level. 

10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as ”outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. 

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BSP75G-13 Document number: DS45989 Rev. 2 - 2 

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**BSP75G-13** 

## **Typical Characteristics** 

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RDS(ON)<br>Limited  See Note 5<br>= | SSS 2 25 |<br>© LS SS STNG<br>&¢ Eeeeesees 46 20 NG<br>5<br>Oso9mp. | SSS as ~<br>TA = 25°C<br>- 57m Pose 's | VUSAMI 8 - NOT<br>See Note 7<br>**----- End of picture text -----**<br>


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TA = 25°C  l ||| Bill All! lll! Bill! Sa) Be Be Shi Sh Beni<br>aU MUU OU Si a a a<br>TA = 25°C<br>**----- End of picture text -----**<br>


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BSP75G-13 Document number: DS45989 Rev. 2 - 2 

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**BSP75G-13** sd 

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DIODES.<br>**----- End of picture text -----**<br>


## **Typical Characteristics** (continued) 

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1H EEE EEEee © 200 o<br>Yee see se ee ee ee PTT Tt Ty Pt<br>—~ oMLLILITiti tt iti t i ttT oLtLLLtTIi<br>3 4 5 6 7 8 9 10 50 -25 0 25 50 75 100 125<br>0412 titi tii ttf |<br>V,, Drain-Source Voltage (V) T, Junction Temperature (°C)<br>Typical Output Characteristic On-state Resistance vs Temperature<br>=>2000 1.4<br>©2 Lili| | | | fl jp} | | | } ft ft ft<br>8  sootItt rapt tt ft tt<br>1500 } ~~ | | | | [ J<br>B§ sooo|_|LL_tt| || tt| n-actt| | | ga“Tot.™_ot [TTT]<br>gr TF iso7a t ft | 8 ogf 1 1tS<br>So s 8 7<br>F sol | |Me]| | | hug aL<br>ee ee e  ee ee<br>o tL | | | | | i tf o4L 1_| PT<br>DS(ON)<br>R<br>IN(TH)<br>V<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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BSP75G-13 Document number: DS45989 Rev. 2 - 2 

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**BSP75G-13** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT223** 

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D<br>b1 Q<br>C<br>E E1<br>Gauge<br>Plane<br>0.25<br>Seating L<br>Plane Ee<br>e1 b<br>e<br>A A1 7°<br>0°-10°<br>7°<br>**----- End of picture text -----**<br>


|**SOT223**|**SOT223**|**SOT223**|**SOT223**|
|---|---|---|---|
|**Dim**|**Min**|**Max**|**Typ**|
|**A**|1.55|1.65|1.60|
|**A1**|0.010|0.15|0.05|
|**b**<br>~~====~~|0.60<br>~~====~~|0.80<br>~~====~~|0.70<br>~~====~~|
|**b1**<br>~~====~~|2.90<br>~~====~~|3.10<br>~~====~~|3.00<br>~~====~~|
|**C**<br>~~====~~|0.20<br>~~====~~|0.30<br>~~====~~|0.25<br>~~====~~|
|**D**<br>~~====~~|6.45<br>~~====~~|6.55<br>~~====~~|6.50<br>~~====~~|
|**E**<br>~~====~~|3.45<br>~~====~~|3.55<br>~~====~~|3.50<br>~~====~~|
|**E1**<br>~~====~~|6.90<br>~~====~~|7.10<br>~~====~~|7.00<br>4.60<br>~~====~~|
|**e**|-|-|4.60|
|**e1**|-|-|2.30|
|**L**|0.85|1.05|0.95|
|**Q**|0.84|0.94|0.89|
|**All Dimensions in mm**||||



## **Suggested Pad Layout** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

## **SOT223** 

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X1<br>Y1<br>C1 Y2<br>Y<br>ooa X C<br>**----- End of picture text -----**<br>


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Dimensions Value (in mm)<br>C 2.30<br>C1  6.40<br>X  1.20<br>X1  3.30<br>Y  1.60<br>Y1  1.60<br>Y2  8.00<br>**----- End of picture text -----**<br>


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**BSP75G-13** 

## **IMPORTANT NOTICE** 

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 

5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 

6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice 

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. 

- © 2024 Diodes Incorporated. All Rights Reserved. 

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