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BSP716NH6327XTSA1
Power MOSFET, N Channel, 75 V, 2.3 A, 0.16 ohm, SOT-223, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: AEC-Q101
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 75V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.3A
- Drain Source On State Resistance: 0.16ohm
- Gate Source Threshold Voltage Max: 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.505 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSP716N** ## **OptiMOS[™] Small-Signal-Transistor** ## **Features** - N-channel - Enhancement mode • Logic Level (4.5V rated) - Avalanche rated ## **Product Summary** |**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**| |---|---|---|---| ||||| |_V_DS||75|V| ||_V_GS=10 V<br>_V_GS=4.5 V||| |_R_DS(on),max||0.16|W| ||||| |||0.18|| ||||| |_I_D||2.3|A| - Qualified according to AEC Q101 |• Qualified according to AEC Q101|• Qualified according to AEC Q101|• Qualified according to AEC Q101|• Qualified according to AEC Q101|• Qualified according to AEC Q101|Drain|Drain|Drain|Drain|Drain|Drain|||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |• 100% lead-free; RoHS compliant<br>• Halogen-free according to IEC61249-2-21|• 100% lead-free; RoHS compliant<br>• Halogen-free according to IEC61249-2-21<br>os<br>AEG itedS/(G) Halogen-Free||||pin 2,4<br>(4)<br>pin<br>1<br>ona|||||||75.2<br>PG-SOT223<br> S>|||| ||||||||||||||||| ||Type<br>Package|||Tape and Reel|||Marking|||Halogen-Free|||||Packing| ||||||||||||||||| ||||||||||||||||| ||BSP716N<br>SOT223|||H6327: 1000 pcs/ reel|H6327: 1000 pcs/ reel||BSP716N|||Yes|||||Non dry| ## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified |**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified||| |---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**| |Continuous drain current|_I_D<br>|_T_A=25 °C<br>~~ee~~|2.3<br>~~ee~~|A<br>~~ee~~| |||_T_A=70 °C<br> ~~a~~|1.8|| |Pulsed drain current|_I_D,pulse<br>~~! ~~<br>~~pp~~|_T_A=25 °C<br> <br>~~pp~~|9.2|| |Avalanche energy, single pulse|_E_AS<br>~~pp~~|_I_D=2.3 A,_R_GS=25W<br>~~pp~~|33|mJ| |Reverse diode d_v_/d_t_|d_v_/d_t_<br>~~pp~~|_I_D=2.3 A,_V_DS=80 V,<br>d_i_/d_t_=200 A/µs,<br>_T_j,max=150 °C<br>~~pp~~|6|kV/µs| |Gate source voltage|_V_GS<br>~~ee~~|~~ee~~|±20<br>~~ee~~|V<br>~~ee~~| |Power dissipation|_P_tot<br>~~ee~~|_T_A=25 °C<br>~~ee~~|1.8<br>~~ee~~|W<br>~~ee~~| |Operating and storage temperature|_T_j,_T_stg<br>~~ee~~|~~ee~~|-55 ... 150<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~<br>~~ee~~| |ESD Class|~~ee~~|JESD22-A114 -HBM<br>~~ee~~|0 (<250V)<br>~~ee~~|| |Soldering Temperature|~~ee~~|~~ee~~|260 °C<br>~~ee~~|| |IEC climatic category; DIN IEC 68-1|~~a~~|~~a~~|55/150/56<br>~~a~~|~~a~~| Rev 2.0 page 1 2013-04-04 ||||||||**BSP716N**| |---|---|---|---|---|---|---|---| |**Parameter**<br>**Symbol **<br>**Thermal characteristics**<br>~~ee~~|||**Conditions**|**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|||| ||Thermal resistance<br>junction - soldering point|_R_thJS|||-|-|25<br>K/W| ||Thermal resistance|_R_thJA|minimal footprint||-|-|110| ||junction - ambient||6 cm2cooling area1)||-|-|70| **Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified ## **Static characteristics** |**Static characteristics**||||||| |---|---|---|---|---|---|---| |Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=250 µA|75|-|-|V| |Gate threshold voltage|_V_GS(th)|_V_DS=Vgs V,_I_D=218 µA|=218 µA<br>0.8|1.4|1.80|| |Drain-source leakage current|_I_DSS|_V_DS=75 V,_V_GS=0 V,<br>_T_j=25 °C|-|-|0.1|mA| |||_V_DS=75 V,_V_GS=0 V,<br>_T_j=150 °C|-|-|10|| |Gate-source leakage current|_I_GSS|_V_GS=20 V,_V_DS=0 V|-|-|10|nA| |Drain-source on-state resistance|RDS(on)|_V_GS=10 V,_I_D=2.3 A|-|122|160|mW| |||_V_GS=4.5 V,_I_D=2.2 A|-|138|180|| |Transconductance|_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=1.8 A||5.71|-|S| 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-04 |||||||**BSP716N**|**BSP716N**| |---|---|---|---|---|---|---|---| |**Parameter**<br>**Dynamic characteristics**<br>~~ee ee~~||**Symbol Conditions**<br>~~ee ~~||**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br> ~~ee~~|||| ||Input capacitance|_C_iss||-|237|315|pF| ||Output capacitance|_C_oss|_V_GS=0 V,_V_DS=25 V,<br>_f_=1 MHz|-|41|55|| ||Reverse transfer capacitance|Crss||-|19|29|| ||Turn-on delay time|_t_d(on)||-|4.6|6.9|ns| ||Rise time|_t_r|_V_DD=37.5 V,|-|5.5|8.3|| ||||_V_GS=10 V,_I_D=2.3 A,||||| ||Turn-off delay time|_t_d(off)|_R_G,ext=6W|-|50.1|75.2|| ||Fall time|_t_f||-|16.7|25.1|| ||Gate Charge Characteristics||||||| ||Gate to source charge|_Q_gs||-|0.6|0.9|nC| ||Gate to drain charge|_Q_gd|_V_DD=37.5 V,_I_D=2.3 A,|-<br>=2.3 A,|2.5|3.8|| ||Gate charge total|_Q_g|_V_GS=0 to 10 V|-|8.7|13.1|| ||Gate plateau voltage|_V_plateau||-|2.4|-|V| ||**Reverse Diode**||||||| ||Diode continous forward current|_I_S||-|-|2.3|A| ||||_T_A=25 °C||||| ||Diode pulse current|_I_S,pulse||-|-|9.2|| ||Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=2.3 A,<br>_T_j=25 °C|-|0.86|1.1|V| ||Reverse recovery time|_t_rr|_V_R=37.5 V,_I_F=2.3 A,|-|31|46.5|ns| ||Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|28|42|nC| Rev 2.0 page 3 2013-04-04 **BSP716N** ## **1 Power dissipation** _P_ tot=f( _T_ A) ## **2 Drain current** _I_ D=f( _T_ A); _V_ GS≥10 V **==> picture [468 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 2 2.5<br>2<br>1.5<br>1.5<br>1<br>1<br>0.5<br>0.5<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br> [W]<br> [A]<br>P tot I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 parameter: _t_ p **4 Max. transient thermal impedance** _Z_ thJA=f( _t_ p) parameter: _D_ = _t_ p/ _T_ **==> picture [467 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1 ] 10 [2 ]<br>1 µs<br>10 µs<br>100 µs<br>1 ms<br>0.5<br>10 [0 ]<br>10 ms<br>0.2<br>10 [-1 ] 10 [1 ]<br>0.1<br>DC<br>0.05<br>10 [-2 ]<br>0.02<br>0.01<br>single pulse<br>10 [-3 ] 10 [0 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ]<br>V DS [V] t p [s]<br> [A] [K/W]<br>I D<br>thJA<br>Z<br>**----- End of picture text -----**<br> Rev 2.0 page 4 2013-04-04 **BSP716N** ## **5 Typ. output characteristics** ## **6 Typ. drain-source on resistance** _I_ D=f( _V_ DS); _T_ j=25 °C _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [470 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> parameter: V GS parameter: V GS<br>7 800<br>5 V<br>10 V<br>3 V<br>700<br>6<br>2.8 V 600<br>5<br>2.5 V<br>500<br>4<br>400<br>3 2.5 V<br>| ne 300<br>2 e F 3 V<br>200<br>4 V<br>1 10 V<br>100<br>LHe 2 V J B ee<br>= =<br>0 0<br>0 2 4 6 0 1 2 3 4 5 6 7<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I D=f( V GS); | V DS|>2| I D| R DS(on)max g fs=f( I D); T j=25 °C<br>7 10<br>9<br>6<br>Popo 8 pa<br>5 l 7 aD 4nne<br>6<br>4<br>PEP HE<br>5<br>3<br>4<br>fo 3 Z2nnnnn<br>2<br>2<br>150 °C 25 °C<br>1<br>1<br>J y foPEPE<br>0 0<br>0 1 2 3 4 0 1 2 3 4 5 6 7<br>V GS [V] I D [A]<br>]<br>W<br> [A] [m<br>I D<br>DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> Rev 2.0 2013-04-04 page 5 **BSP716N** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=2.3 A; _V_ GS=10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ DS=VGS; _I_ D=218 µA parameter: _I_ D **==> picture [470 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 400 2.5<br>CoEEEEECEE<br>350<br>2<br>300<br>FEEEEECEEE sHEanGHEE<br>250 PERE EPPS<br>1.5<br>max<br>200<br>max<br>typ<br>L A A) 1 P S S<br>150<br>e e typ e R L S<br>100<br>0.5 min<br>e e )<br>50<br>0 0<br>-60 -40 -20 0 FEEEEEEFEEE 20 40 60 80 100 120 140 160 -60 -40 -20 0 TE 20 40 60 80 100 120 140 160<br>T j [°C] T j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br> =f( V DS); ); V GS=0 V; =0 V; f =1 MHz; Tj=25°Cj=25°C=25°C I F=f( V SD)<br>parameter: T j<br>10 [3 ] 10 [1 ]<br>25 °C<br>Ciss 150 °C<br>i e 4<br>10 [2 ] 10 [0 ]<br>Coss<br>Crss<br>S a fff<br>10 [1 ] 10 [-1 ]<br>150 °C, 98%<br>25 °C, 98%<br>o e Lae<br>10 [0 ] 10 [-2 ]<br>0 10 20 30 40 50 60 70 80 90 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>V DS [V] V SD [V]<br>]<br>W [V]<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); ); _V_ GS=0 V; =0 V; _f_ =1 MHz; Tj=25°Cj=25°C=25°C Rev 2.0 page 6 2013-04-04 **BSP716N** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 W parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=2.3 A pulsed parameter: _V_ DD **==> picture [462 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1 ] 10<br>40 V<br>9<br>20 V 60 V<br>8<br>7<br>125 °C 100 °C 25 °C 6<br>10 [0 ] 5<br>4<br>3<br>WN<br>2 -<br>1<br>fre<br>10 [-1 ] 0<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 0 1 2 3 4 5 6 7 8 9<br>t AV [µs] Q gate [nC] [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br> BR(DSS)=f(=f( T j); ); I D=250 µA=250 µA<br>96<br>V GS<br>92<br>Q g<br>88<br>84<br>80<br>76<br>V gs(th)<br>72<br>68<br>64 Q g(th) Q sw Q gate<br>60 Q gs Q gd<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [A] [V]<br>I AV V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> **==> picture [227 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>40 V<br>9<br>20 V 60 V<br>8<br>7<br>6<br>5<br>4<br>3<br>WN<br>2 -<br>1<br>fre<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>Q gate [nC] [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=250 µA=250 µA Rev 2.0 2013-04-04 page 7 **BSP716N** ## **SOT223** ## **Package Outline:** **==> picture [441 x 270] intentionally omitted <==** **----- Start of picture text -----**<br> 6.5 +0.2 1.6 +0.1<br>• 100% lead-free;Halogen-free; RoHS compliant<br>0.1 max<br>75.2<br>Bt |<br>SST| acc.weto aFy|<br>| DIN6784 | tn :<br>3.8<br>| eT<br>1 E 2}-| 3 2<br>ED EY Ey a7<br>0.7 +0.1 il [| 0.28<br>Footprint: Packaging:<br>**----- End of picture text -----**<br> **==> picture [84 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions in mm<br>**----- End of picture text -----**<br> Rev 2.0 page 8 2013-04-04 **BSP716N** ## **Published by** ## **Infineon Technologies AG** ## **81726 Munich, Germany** ## **© 2011 Infineon Technologies AG All Rights Reserved.** ## **• 100% lead-free;Halogen-free; RoHS compliant** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, 75.2 Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 3.8 ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 page 9 2013-04-04
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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