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BSP613PH6327XTSA1
Power MOSFET, P Channel, 60 V, 2.9 A, 0.13 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-2.9A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.9A
- Drain Source On State Resistance: 0.13ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.436 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSP613P**
## **SIPMOS**[] **Small-Signal-Transistor Feature**
- P-Channel
- Enhancement mode
- Avalanche rated
- d _v_ /d _t_ rated
- Ideal for fast switching buck converter
- ¢ Pb-free lead plating; ROHS compliant
- Qualified according to AEC Q101
- Halogenfree according to IEC61249221
|||||||**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||_V_DS||-60|||V|
|||||||_R_DS(on)<br>0.13|||||Ω|
|||||||_I_D||-2.9|||A|
|||||||||PG-SOT223||||
|||||||||||||
|Gate<br>pin1||||Drain<br>pin 2,4<br>Source<br>pin 3||||4<br>Mm<br>ES<br>Q SS<br>SES<br>1||ES<br>2<br>VPS05163||
|**Type**|**Package**|**Tape and reel**|**Packaging Markin**|**Marking**|
|---|---|---|---|---|
|BSP613P|PG-SOT223|H6327: 1000pcs/r.<br>|NonD ryB S P 613 P|B S P 613 P|
## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified
|**Maximum Ratingsgss**, at_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specifiedpecifiedecified|||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-2.9<br>-2.3|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|-11.6||
|Avalanche energy, single pulse<br>_I_D=2.9 A ,_V_DD=-25V,_R_GS=25Ω|_E_AS|150|mJ|
|Avalanche energy, periodic limited by _T_jmax|_E_AR|0.18||
|jmax<br>Reverse diode d_v_/d_t_<br>_I_S=2.9A,_V_DS=-48V, d_i_/d_t_=-200A/µs,_T _jmax=150°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A=25°C|_P_tot|1.8|W|
|Operatingand storage temperature|_T_j,_T_stg|-55... +150|°C|
|IEC climatic category;DIN IEC 68-1||55/150/56||
|ESD Class<br>JESD22-A114-HBM||Class 1c||
2016-05-30
Rev.2.8 Page 1
|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|**BSP613P**<br>**Thermal Characteristics**<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cafineon~~ee~~<br>~~ee~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||
||Thermal resistance, junction - soldering point||||_R_thJS||-||-||19||K/W|
||(Pin 4)|||||||||||||
||Thermal resistance, junction - ambient,leaded||||_R_thJA||-||100||-|||
||SMD version, device on PCB:||SMD version, device on PCB:||_R_thJA|||||||||
||@ min. footprint||||||-||-||100|||
||@ 6 cm2cooling area1)||||||-||-||70|||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>~~|~~<br>~~|~~|_V_(BR)DSS<br>~~||~~<br>~~||~~|-60<br>~~**|**~~<br>~~**|**~~|-|-|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-1mA<br>~~|~~<br>~~|~~|_V_GS(th)<br>~~| |~~<br>~~||~~|-2.1<br>~~**|**~~<br>~~**|**~~|-3|-4||
|Zero gate voltage drain current<br>_V_DS=-60V,_V_GS=0,_T_j=25°C<br>_V_DS=-60V,_V_GS=0,_T_j=125°C<br>~~|~~<br>Bane<br>~~|~~|_I_DSS<br>~~| |~~<br>Bane<br>~~||~~|-<br>-<br>~~**|**~~<br>Bane<br>~~**|**~~|-0.1<br>-10<br>Bane|-1<br>-100<br>Bane|µA|
|Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>~~|~~<br>~~|~~|_I_GSS<br>~~||~~<br>~~||~~|-<br>~~**|**~~<br>~~it~~|-10<br>~~it~~|-100<br>|nA|
|Drain-source on-state resistance<br>_V_GS=-10V,_I_D=2.9A<br>~~|~~<br>~~|~~|_R_DS(on)<br>~~| |~~<br>~~||~~|-<br>~~**|**~~<br>~~it~~|0.11<br>~~it|~~|0.13<br>~~|~~|Ω|
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
2016-05-30
Rev.2.8 Page 2
|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|**BSP613P**<br>**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~|~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||**Dynamic Characteristics**||||||||||||||||
||Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime<br>Rise time<br>Turn-off delaytime<br>Fall time|||_g_fs<br>|_V_DS|≥2*|_I_D|*_R_DS(on)max,<br>_I_D=2.9A<br>2.7<br>5.4<br>-<br>_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>715<br>875<br>_C_oss<br>-<br>230<br>295<br>_C_rss<br>-<br>90<br>120<br>_t_d(on)<br>_V_DD=-30V,_V_GS=-10V,<br>_I_D=2.9A,_R_G=2.7Ω<br>-<br>6.7<br>17<br>_t_r<br>-<br>9<br>18<br>_t_d(off)<br>-<br>26<br>52<br>_t_f<br>-<br>7<br>19<br>~~Pr~~<br>~~=~~<br>~~ERE~~<br>~~===~~||||||||||||S<br>pF<br>ns|
||**Gate Charge Characteristics**||||||||||||||||
||Gate to source charge||||_Q_gs||_V_DD=-48V,_I_D=2.9A|||-||2.5||3.8||nC|
||Gate to drain charge||||_Q_gd|||||-||8.9||14.3|||
||Gate charge total||||_Q_g||_V_DD=-48V,_I_D=2.9A,|||-||22||33|||
||||||||_V_GS=0 to -10V||||||||||
||Gateplateau voltage||||_V_(plateau)||_V_DD=-48V,_I_D=2.9A|||-||-3.9||-||V|
||**Reverse Diode**||||||||||||||||
||||||||||||||||||
||Inverse diode continuous||||_I_S||_T_A=25°C|||-||-||-2.9||A|
||forward current||||||||||||||||
||||||||||||||||||
||Inv. diode direct current, pulsed||||_I_SM|||||-||-||-11.6|||
||Inverse diode forward voltage||||_V_SD||_V_GS=0V, |_I_F| = |_I_S||||-||-0.8||-1.1||V|
||Reverse recoverytime||||_t_rr||_V_R=-30V, |_I_F| = |_I_S|,|||-||37.2||79||ns|
||Reverse recoverycharge||||_Q_rr||d_i_F/d_t_=100A/µs|||-||59.8||112||nC|
2016-05-30
Rev.2.8 Page 3
**BSP613P**
## **1 Power Dissipation**
_P_ tot = _f_ ( _T_ A)
## **2 Drain current**
_I_ D = _f_ ( _T_ A)
parameter: _V_ GS ≥ 10 V
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**----- Start of picture text -----**<br>
1.9<br>W PET Eee EE EEE<br>FPN EE<br>1.6<br>FCCRECCCEE ELLE<br>BREN<br>1.4 FCCC ELEC EEE<br>PTT TEIN EEE TTT TT<br>1.2 SERN<br>SRG eeR Geese<br>1 PTT TTT TEIN; EET TT<br>PT TT TTT TEALTET TTT TI<br>0.8 PTT TTT PT IN TTT TT<br>| TACT LEE<br>0.6 PETPCCP ENE<br>0.4 Pt tteTT TtEEttEELtT TATITN TTTTTT<br>tN<br>0.2 0 PETPTTTTTTTTTT TPT TTTTTTENETTNAT<br>0 20 40 60 80 100 120 °C 160<br>T A<br>tot<br>P<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D = _f_ ( _V_ DS )
parameter : _D_ = 0 , _T_ A = 25 °C
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**----- Start of picture text -----**<br>
10 2<br>A<br>a |<br>t = 100.0<br>p<br>10 1<br> 1 ms<br>10 0 10 m s<br>e e<br>EEEa SE<br>NA<br>10 -1<br>DC<br>TT TTTTTTTP<br>10 -2 PTT TIT OT<br>-10 -1 -10 0 -10 1 V -10 2<br>V<br>DS<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>D<br>I<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
3.2 PTT TT TTT EEE Ey tt<br>A EERCEECEEL ELE<br>COST<br>SS<br>2.4<br>PEt PT TING TTT TTT TT<br>BRRRRANEE<br>2 PTTPECCEEEPENTT TEEN ELEEEE<br>STEEN ELL<br>1.6<br>\<br>1.2 PT TT ETT EEE NE EE<br>PTET EET EEL EIN EET<br>0.8 PL TTT ELE EELEERE<br>PETE TTTTN<br>TTT TTL ANE<br>-ECECEELEELAANN<br>0.4 0 PTETPLETEETELEET TETEL EE EET<br>0 20 40 60 80 100 120 °C 160<br>T A<br>D<br>I<br>**----- End of picture text -----**<br>
## **4 Transient thermal impedance**
_Z_ thJC = _f_ ( _t_ p)
## parameter: _D_ = _t_ p / _T_
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**----- Start of picture text -----**<br>
10 2<br>K/W<br>10 1 ELare amie el<br>10 0<br>10 -1<br>| RD Sh NI Hill<br>10 -2 UTeeTUITIONee TRSSt D = 0.500.20 lllPAH<br>0.10<br>10 -3 y, UHH TL<br>0.05<br>single pulse 0.02<br>10 -4 0.01<br>Seer Seti Seeiti aeeertiimeeetiti<br>10 -5 | EL SSeeaid| meRRi<br>-7 -6 -5 -4 -3 -2 0<br>10 10 10 10 10 10 s 10<br>t<br>—r p<br>thJC<br>Z<br>**----- End of picture text -----**<br>
2016-05-30
Rev.2.8 Page 4
**BSP613P**
## **5 Typ. output characteristic**
_I_ D = _f_ ( _V_ DS)
parameter: _T_ j =25°C
## **6 Typ. drain-source on resistance**
_R_ DS(on) = _f_ ( _I_ D)
parameter: _V_ GS; _T_ j = 25 °C
**==> picture [477 x 263] intentionally omitted <==**
**----- Start of picture text -----**<br>
7 0.5<br>A<br>Ω<br>Uy TAT ; TT yy LLL<br>Vgs = 5V<br>6<br>Ay pb 0.4 ELLE<br>5.5<br>Vgs = 4V<br>Vgs = 4,5V<br>5 Vgs = 10V 0.35<br>4.5 Syne Vgs = 4.5V }<br>ee 0.3 Pi ELL<br>me EE CTT<br>4 Vgs = 6V<br>3.5 ai -—j~—-T TLL "7 | | 0.25 LEELA7] /<br>3 Vgs = 5V<br>AT TP tt yy 0.2 |{tteLL<br>ee 2.5 | |<br> 2 2 S/o Vgs = 4V ee 0.15 Hee Vgs = 6V<br>1.5 EEE EEC 0.1 TP Vgs = 10V<br>1<br>MH Vgs=3.5V 0.05 OT a<br>0.5 1/2<br>0 MELLLI_LIL LIL 0 PTL EE ELEELEL<br>0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 1 2 3 4 A 6<br>-VDS -ID<br>-I D RDS(on)<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics**
_I_ D= _f_ ( _V_ GS ); | _V_ DS| ≥ 2 x | _I_ D| x _R_ DS(on)max parameter: _T_ j = 25 °C
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**----- Start of picture text -----**<br>
8 PF} Tt ELE LET ELL |<br>A<br>PtPTTELT ELE LE LLL |<br>6 PT tT TELLEEE LE E UTeyLL LIy<br>Pt<br>5 PE TTEL ELETET TyLT UE |EyLt<br>PETE<br>4 Pt ELT EEE LET L<br>Pt ETLtT E t;LEELLL E TLLLLtLI<br>3 Pt EL ELE LT ET yt<br>|<br>PTT] tty? Eye et<br>2 Ft ELT EL ELE LT] yt<br>Pt<br>1 Pt; TLtt E tLELTELAL TTLLLLtLI<br>PTT<br>0 PF} ELLE {Tt TT FET L tteyt t<br>0 1 2 3 4 5 V 7<br>-VGS<br>ID<br>**----- End of picture text -----**<br>
## **8 Typ. forward transconductance**
_g_ fs = f( _I_ D)
parameter: _T_ j = 25 °C
**==> picture [220 x 262] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 PETLETTE<br>S<br>PEELEE EeeEET E E<br>6 TTTPL ELLETTTTETLEEELLELerL L ELL<br>LL<br>5 LLLPLETE VEALELAA LE E LELELELELLEE<br>LL<br>4 PLL VALLE ELLE<br>P LIVELELELEELELELELELETE<br>3 PTALELELELLEELELELL<br>EE<br>PVE LLL ELLE<br>2 PAT LEEELLE<br>LL<br>1 LEHEELE LEL L EEL E LELL<br>LE ELL EELEE<br>0 P LLLEL [ELELELELELELELLL] ELLE ELLE<br>0 1 2 3 4 5 6 7 8 A 10<br>-ID<br>gfs<br>**----- End of picture text -----**<br>
2016-05-30
Rev.2.8 Page 5
**BSP613P**
## **9 Drain-source on-state resistance**
RDS(on) = f (Tj)
parameter : ID = -2.9 A, VGS = -10 V
## **10 Gate threshold voltage**
## VGS(th) = f (Tj)
parameter: VGS = VDS, ID = -1 mA
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**----- Start of picture text -----**<br>
0.34 -5.0<br>W T TEEEEEES EEL V Oe<br>0.28 See met EEE 98%<br>TEEPE EEE -4.0 <E<br>FREE EEE Ee LLL rth<br>0.24 -3.5<br>typ<br>TEEPE eee SO<br>-3.0<br>0.20 TEEPE Eee > ae<br>SEPT er ey.)<br>HOOT 98% -2.5 Pm LE<br>0.16<br>COC typ EEE -2.0 - 2% —<br>I 0.12 ERAT Pree EET<br>ETHEE C R)E EEL 1 TR SSeoD~<br>-1.5<br>0.08<br>pee eee<br>EEE -1.0<br>CEE EE ELL<br>0.04<br>-0.5<br>Pt E Ere PELELEELELLE ELL<br>0.00 —EEEELELELL | ttt tt tt teEe 0.0 TET TTT TTT<br>-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 180<br>T T<br>——_ j — j<br>DS(on) GS(th)<br>R V<br>**----- End of picture text -----**<br>
## **11 Typ. capacitances**
C = f (VDS)
parameter: VGS=0V, f=1 MHz
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10 4<br>—————<br>A CO<br>pF a<br>ee<br>10 3<br>pi Ett tt<br>Ciss<br>NooN<br>A ee ee eee<br>Coss<br>f 10 2 DSNe Crss<br>aes se |<br>10 1 CEEEECE<br>0 -5 -10 -15 -20 -25 -30 V -40<br>— VDS<br>C<br>**----- End of picture text -----**<br>
## **12 Forward characteristics of reverse diode**
## IF = f (VSD)
parameter: Tj , tp = 80 µs
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**----- Start of picture text -----**<br>
-10 2<br>RRR EERE REEREES<br>fT [| | [| | tT yoy yyy<br>A ee<br>FCCCCEEC EEL<br>-10 1<br>BRAARRREDSAEE<br>[| | f Ff | Wwf] TT | tT fT<br>Li lT eT Avett ett te<br>t -10 0 SEAEAT<br>Tj = 25 °C typ<br>[| [ff Tt | Tj = 150 °C typ [ [[7]<br>_ | TTS Tj = 25 °C (98%) | | ||<br>Tj = 150 °C (98%)<br>-10 -1 OAR Th<br>0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0<br>— VSD<br>F<br>I<br>**----- End of picture text -----**<br>
Rev.2.8 Page 6
2016 - 05 - 30
**BSP613P**
## **13 Typ. avalanche energy**
## _E_ AS = _f_ ( _T_ j)
par.: _I_ D = 2.9 A , _V_ DD = -25 V, _R_ GS = 25 Ω
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**----- Start of picture text -----**<br>
160 PF | | | fl fT Tl<br>mJ<br>120 KNVifP\i| [| [|| || [[| |[||<br>PVN [| [| [| [| [|<br>100 PK | | | [| ff<br>| [| [| [ [|<br>PoI\Vi [| [| [| [ |<br>80 | | \} | ft | ft<br>P| \ [| | [| [|<br>60<br>| Po; IN| ET<br>40 PotPp | [NE | ft<br>| | | |X}KE | ft<br>20 P| | | KX {| [|<br>Na<br>0 P| | [| | To |<br>25 45 65 85 105 125 ºC 165<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br>
## **14 Typ. gate charge**
_V_ GS = _f_ ( _Q_ G), parameter: _V_ DS ; Tj = 25 °C _I_ D = 2.9 A pulsed;
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**----- Start of picture text -----**<br>
16 PLT TET TEE ETE<br>V12 PLTPTETTELTTTELEEEETEALLLEET|<br>PTT TT TT TTT TAY |<br>10 PTLT TTT TTT TAY TIT<br>{ETT ET TT TAT TT<br>0.2 V DS max PTTYALL<br>8 0.8 V DS max MEL AIZ LE TTT<br>NVIAL<br>6<br>| PLT TT AAT TE T ET T TTTT<br>4 STTTTAAT LTT TTT<br>P VT T TI T YT ITEYT ttET TEEtty<br>2 FAL TETTEE<br>EE EEE<br>0 PETEE TE PETEELE E EELL EE EL LLL<br>0 4 8 12 16 20 24 28 nC 34<br>|Q G |<br>GS<br>V<br>**----- End of picture text -----**<br>
## **15 Drain-source breakdown voltage**
_V_ (BR)DSS = _f_ ( _T_ j)
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**----- Start of picture text -----**<br>
-72 TTTEPLELELIELeLoel<br>V FPPPEPeeeeeee<br>FFPPPTereereeee<br>-68 FFPPPeeerere FPFPPPeeeeererey ee<br>-66 eea<br>a<br>-64 a2<br>-62 FFE TPA eee<br>| a 4<br>-60 a<br>-58 TPTD4 TYEE<br>-56 TYEEECEEELELZ7_EEECECEELELLLe<br>-54 Os ET<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>
Rev.2.8 Page 7
2016-05-30
**BSP613P**
## **Package Outline SOT-223**
## **Footprint**
Soldering type: Reflow soldering Soldering type: Wave soldering
## **Tape and Reel**
## Dimensions in mm
2016-05-30
Rev.2.8 Page 8
**BSP613P**
## BSP613P
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.8|2016-06-13|Insert package outlines|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
9
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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