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BSP317PH6327XTSA1
Power MOSFET, P Channel, 250 V, 430 mA, 3 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-430mA; Drain Source Voltage Vds:-250V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 250V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 430mA
- Drain Source On State Resistance: 3ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.239 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSP317P** ## **SIPMOS[] Small-Signal-Transistor** ## **Feature** - P-Channel - Enhancement mode - Logic Level |**Product Summar**|**Product Summary**|**Product Summary**| |---|---|---| |_V_DS|-250|V| |_R_DS(on)|4|Ω| |_I_D|-0.43|A| **==> picture [490 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> • d v /d t rated PG-SOT223<br>Drain<br>4<br>pin 2/4<br>¢ Qualified according to AEC Q101 Pb-free lead plating; RoHS compliant Gate LEO 2)<br>pin1<br>• ; Halogenfree according to IEC61249221 Source A [<<] 3<br>2<br>pin 3<br>1 VPS05163<br>ye aes RoHS ~~ QES<br>& eee ee AECS<br>Type Package Tape and Reel Information Marking Packaging<br>BSP317P PG-SOT223 L6327: 1000 pcs/reel BSP317P Non dry<br>**----- End of picture text -----**<br> ## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified |j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**| |---|---|---|---| |Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-0.43<br>-0.34|A| |Pulsed drain current<br>_T_A=25°C|_I_D puls|-1.72|| |Reverse diode d_v_/d_t_<br>_I_S=-0.43A,_V_DS=-200V, d_i_/d_t_=-200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs| |Gate source voltage|_V_GS|±20|V| |Power dissipation<br>_T_A=25°C|_P_tot|1.8|W| |Operatingand storage temperature|_T_j ,_T_stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|jstg|55/150/56|| |ESD Class<br>JESD22-A114-HBM||Class 1b|| 20121126 Rev.1.62.5 3 Page 1 **BSP317P** **Thermal Characteristics** |**Thermal Characteristics**|| |---|---| |**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~| |Thermal resistance, junction - soldering point|_R_thJS<br>-<br>15<br>25<br>K/W| |(Pin 4)|| |SMD version, device on PCB:|_R_thJA| |@ min. footprint|-<br>80<br>115| |@ 6 cm2cooling area1)|-<br>48<br>70| |**Electrical Characteristics**,at_T_j= 25 °C,unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Static Characteristics**<br>~~ee~~<br>~~ee eee~~|| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-370µA<br>Zero gate voltage drain current<br>_V_DS=-250V,_V_GS=0,_T_j=25°C<br>_V_DS=-250V,_V_GS=0,_T_j=150°C<br>Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-0.39A<br>Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-0.43A|_V_(BR)DSS<br>-250<br>-<br>-<br>V<br>_V_GS(th)<br>-1<br>-1.5<br>-2<br>_I_DSS<br>-<br>-<br>-0.1<br>-10<br>-0.2<br>-100<br>µA<br>_I_GSS<br>-<br>-10<br>-100<br>nA<br>_R_DS(on)<br>-<br>3.3<br>5<br>Ω<br>_R_DS(on)<br>-<br>3<br>4<br>~~|~~<br>|tt<br>~~|~~<br>|tf<br>~~t~~t<br>~~|~~ |<br>fT~~|~~<br>~~pt ~~tt<br>~~|tt~~| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 20121126 Rev.2. 3 Page 2 **BSP317P** |**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~| |---|---|---|---|---|---|---|---|---| |**Dynamic Characteristics**||||||||| |Transconductance|_g_fs<br>~~|~~||||_V_DS|≥2*|_I_D|*_R_DS(on)max,<br>_I_D=-0.34A<br>0.38<br>0.76<br>Tf|||-|S| |Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime<br>Rise time<br>Turn-off delaytime<br>Fall time|_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>210<br>262<br>_C_oss<br>-<br>30<br>37<br>_C_rss<br>-<br>13.4<br>16.7<br>_t_d(on)<br>_V_DD=-30V,_V_GS=-10V,<br>_I_D=-0.43A,_R_G=6Ω<br>-<br>5.7<br>8.5<br>_t_r<br>-<br>11.1<br>16.6<br>_t_d(off)<br>-<br>254<br>381<br>_t_f<br>-<br>67<br>100<br>~~S~~ESE<br>~~=—~~i~~===~~|||||||pF<br>ns| |**Gate Charge Characteristics**||||||||| |Gate to source charge||_Q_gs||_V_DD=-200V,_I_D=-0.43A|-|-0.5|-0.65|nC| |Gate to drain charge||_Q_gd|||-|-4|-5.2|| |Gate charge total||_Q_g||_V_DD=-200V,_I_D=-0.43A,|-|-11.6|-15.1|| |||||_V_GS=0 to -10V||||| |Gateplateau voltage||_V_(plateau)||_V_DD=-200V,_I_D=-0.43A|-|-2.8|-|V| |**Reverse Diode**||||||||| |Inverse diode continuous||_I_S||_T_A=25°C|-|-|-0.43|A| |forward current||||||||| |Inv. diode direct current,pulsed||_I_SM|||-|-|-1.72|| |Inverse diode forward voltage||_V_SD||_V_GS=0,_I_F=-0.43A|-|-0.84|-1.2|V| |Reverse recoverytime||_t_rr||_V_R=-125V,_I_F=_l_S,|-|92|138|ns| |Reverse recoverycharge||_Q_rr||d_i_F/d_t_=100A/µs|-|210|315|nC| 20121123 Rev.2. 3 Page 3 **BSP317P** ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: | _V_ GS| ≥ 10V **==> picture [479 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSP 317 P BSP 317 P<br>W1.9 T e -0.5<br>PTIN TTT EE yy A 4<br>1.6<br>PEPE eT<br>BEERNERREEEeee -0.4 ~<br>1.4<br>Poo CEN<br>-0.35<br>BERENS NS<br>1.2 Soeeen<br>-0.3<br>yeee see ERNE<br>BERRA x<br>1 CONE CTP NT<br>-0.25<br>LITT ETT TT ALT TET Ty \<br>0.8 SESS0000 0800508 EEL EEE EL<br>-0.2<br>PET TTT TT PIN Ty yy \<br>0.6 BERR \<br>0.4 seeeeraesenzePt}SEEtee eereerTe IN |eeET -0.15-0.1 LEELA\<br>0.2 -0.05<br>SERS [RRRReeeNEe] asm UADSTOOABEIOEANS<br>0 PTET TEEPE EET TT TIN | 0<br>0 PEE 20 40 60 80 100 R 120 S °C 160 © 0 CC 20 40 60 80 CP 100 120 °C 160<br>T A T A<br>tot<br>P I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25°C ## **4 Transient thermal impedance** _Z_ thJA = _f_ ( _t_ p) ## parameter : _D_ = _t_ p/ _T_ **==> picture [484 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> -10 1 BSP 317 P 10 2 BSP 317 P<br>K/W<br>A<br>SeasPT TTTcal |canneeeeenied tl ea tate SPARESinl Tn ctTc0 e e,<br>t p = 140.0µs 10 1<br>-10 0 HHISSFEE THAR_ 22Hat SST SHPIIee 1 ms 10 0 SSmmenectimmeCUTTSnn sti mesmn DSSe0eZ001EeAR all<br>Yt AR TNG |THING 10 ms TG aeaai antiaNSoutowenseat IKSaviBllimei<br>-10 -1 10 -1<br>D = 0.50<br>0.20<br>Saat eesti eee ie HH H SSS<br>0 10 -2 eeSU 0.10 OS<br>-10 -2 0.05<br>0.02<br>RHEEARE S S DC SEE 10 -3 HHSeH St 0.01 ii<br>single pulse Te eT<br>-10 -3 a aa a 10 -4 CUCLAVIE TTT MINT TTTVUE ETIET (ATTNET TIETT TTTEE<br>-10 [-1] -10 [0] -10 [1] -10 [2] V -10 [3] 10 [-7] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] s 10 [0]<br>—_P V DS —_P t p<br>/ I D<br>DS<br>= V<br>R DS(on)<br>thJA<br>D<br>I Z<br>**----- End of picture text -----**<br> 20121126 Rev.2. 3 Page 4 **BSP317P** ## **5 Typ. output characteristic** _I_ D = _f_ ( _V_ DS) parameter: _T_ j =25°C, - _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on) = _f_ ( _I_ D) parameter: _V_ GS; _T_ j =25°C, - _V_ GS **==> picture [478 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 10<br>10V<br>A 5V a Ω AHL ELLE<br>4.4V 2.2V<br>3.6V 2.4V<br>8<br>3.2V Py PALER re 2.8V<br>1.2<br>2.8V 3.2V<br>2.4V 7 3.6V<br>2.2V INSERT ZZA / 4.4V<br>1<br>6 5V<br>10V<br>0.8 5<br>4<br>0.6<br>+ LTNe ge<br>ys SSS<br>3<br>0.4<br>ATT) PT<br>2<br>0.2<br>1<br>ERE TP<br>fo LEE ELE<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.2 0.4 0.6 0.8 1 1.2 A 1.6<br>- V DS - I D<br>D DS(on)<br>I - R<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D= _f_ ( _V_ GS ); | _V_ DS|≥ 2 x | _I_ D| x _R_ DS(on)max parameter: _T_ j = 25 °C ## **8 Typ. forward transconductance** ## _g_ fs = f( _I_ D) parameter: _T_ j =25°C **==> picture [478 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 1.4<br>S<br>A<br>LALLY CEEEEEEEC Eee<br>1.2<br>1.1<br>1.2<br>AUTECHRE EEE<br>1<br>0.9<br>1<br>Et<br>0.8<br>ORR CCEACECCEE<br>0.8 0.7<br>0.6<br>ALLELE AL HEE<br>0.6<br>| 1 0.5 CACC<br>0.4<br>0.4<br>LALLA S/SRRRREREREREER<br>0.3<br>0.2<br>0.2<br>LEELA LEAL POO<br>0.1<br>HELA EL PCCCEEECCee<br>0 0 eer<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 V 3.6 0 0.2 0.4 0.6 0.8 1 1.2 A 1.6<br>- V GS - I D<br>I D- g fs<br>**----- End of picture text -----**<br> 20121126 Rev.2. 3 Page 5 **BSP317P** ## **9 Drain-source on-state resistance** _R_ DS(on) = _f_ ( _T_ j) parameter : _I_ D = -0.43 A, _V_ GS = -10 V **==> picture [227 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> BSP 317 P<br>10 11 j j<br>Ω<br>7 | oy<br>é 9 /<br>8<br>I Sannr,<br>7<br>fo aa<br>f titit 4A<br>6<br>5<br>soe 98% |<br>LEAT<br>4<br>a<br>3 typ<br>ae Tr<br>aa 2<br>EEEoo 10 EEa<br>-60 -60 -70 -20 20 20 60 60 100 100 °C 140 180 180<br>—> T; T j<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **10 Typ. gate threshold voltage** _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS **==> picture [227 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>V<br>98%<br>oeneree<br>2<br>PPTRALE<br>1.8<br>typ.<br>1.6 COCR<br>Me Te<br>1.4<br>LPN<br>1.2 2%<br>aero<br>1 PPR TN<br>0.8 PPPre<br>0.60.4 PEEPLPEEEtterEEEPRL<br>0.20 PEELE LLL<br>-60 -20 20 60 100 °C 160<br>—_— r T j<br>GS(th)<br>V<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** ## _C_ = _f_ ( _V_ DS) parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25°C ## **12 Forward character. of reverse diode** ## _I_ F = _f_ (VSD) ## parameter: _T_ j **==> picture [478 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 -10 1 BSP 317 P<br>=SSSSSaSSSSaeaease =S=S=5=S=S=S===<br>pF Ni | Tt TT tT ee ye [ [| A [ [| | [| | fT fy yy ty ye yy<br>C iss<br>Roe eee<br>Wee SCTE<br>10 2 a -10 0 ann) Ane<br>C oss<br>LIN TT | Pee Ji || | [ty py” | it tt Tt<br>C rss<br>t 10 1 (OrtSPER -10 -1 PiOisiItt ttA<br>Pee =e T j = 25 °C typ ———<br>Poy yp yy ee 2 ee |<br>a ee T j = 150 °C typ rT [ | |<br>Pi T TT eee eT Ter yy LA TS T j = 25 °C (98%) L [| [Ty]]<br>T j = 150 °C (98%)<br>10 0 ECCT -10 -2 2 ne<br>0 4 8 12 16 20 24 28 V 36 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>- V DS V SD<br>F<br>C I<br>**----- End of picture text -----**<br> 20121126 Rev.2. 3 Page 6 **BSP317P** ## **13 Typ. gate charge** _V_ GS = _f_ ( _Q_ Gate) ## **14 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) ## parameter: _I_ D = -0.43 A pulsed, _T_ j = 25°C **==> picture [224 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSP 317 P<br>-16 T CO<br>V<br>COPE vr<br>Seeneeeeeeeen//400<br>-12 PCEELELEEL EL WEL<br>COPLEY<br>-10 Seeneeeeee///4nneenBeeneeeen///4nnneen<br>Saeneeee/4eneeeee<br>-8<br>Seeneee/<br>Baenee7/ 4neneeeee<br>-6<br>COC AY 4eeeneeeeeCLE<br>-4 POTNTTOWVEN 20%50% TTTCEE<br>-2 MoT ON 80% .. EOC<br>POCO Pee<br>0 PCOCCECEATT<br>0 2 4 6 8 10 12 14 nC 18<br>|Q G |<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [227 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> BSP 317 P<br>-300<br>V<br>Ty TP ee |<br>ee<br>-285<br>FEC eee<br>-280<br>ae<br>-275<br>eee<br>-270<br>aee<br>-265<br>ae<br>-260 eeGeEaneee<br>-255 RSE aeeeee<br>-250 SaneJ4a<br>-245 PTT vA<br>-240 PI UAT ET<br>-235 PTA TT<br>ALLEETT EEE<br>-230-225 PEELE FEEL ELT<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> 20121126 Rev.2. 3 Page 7 **BSP317P** 20121126 Rev.2. 3 Page 8
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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