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Illustrative purposes only
BSP316PH6327XTSA1
Power MOSFET, P Channel, 100 V, 680 mA, 1.8 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-680mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vg
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 680mA
- Drain Source On State Resistance: 1.8ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.189 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**BSP316P**
## **SIPMOS[] Small-Signal-Transistor**
## **Feature**
- P-Channel
- Enhancement mode
- Logic Level
- d _v_ /d _t_ rated
- Pb-free lead plating; ROHS compliant
- Qualified according to AEC Q101
- Halogenfree according to IEC61249221
|**Product Summar**|**Product Summar**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|---|---|---|---|
|_V_DS|||-100|||V|
|_R_DS(on)|||1.8|||Ω|
|_I_D|||-0.68|||A|
**==> picture [169 x 85] intentionally omitted <==**
**----- Start of picture text -----**<br>
PG-SOT223-4-1<br>Drain<br>pin 2/4<br>S [.]<br>Gate<br>pin1<br>Source<br>pin 3<br>**----- End of picture text -----**<br>
|**Type**|**Package**|**Tape and Reel Information**|**Marking**|**Packaging**|
|---|---|---|---|---|
|BSP316P|PG-SOT223-4-1|H6327: 1000pcs/reel|BSP316P|Non dry|
## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified
|**Maximum Ratingsgss**, atat_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified||
|---|---|---|---|
|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-0.68<br>-0.54|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|-2.72||
|Reverse diode d_v_/d_t_<br>_I_S=-0.68A,_V_DS=-48V, d_i_/d_t_=-200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A=25°C|_P_tot|1.8|W|
|Operatingand storage temperature|_T_j,_T_stg|-55... +150|°C|
|IEC climatic category; DIN IEC 68-1||55/150/56||
|ESD Class<br>JESD22-A114-HBM||Class 1a||
2016-05-30
Rev. 2.0 Page 1
|**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**<br>Cafineon~~ee ~~|**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**<br>Cafineon~~ee ~~|**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**<br>Cafineon~~ee ~~||**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|**BSP316P**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||
||Thermal resistance, junction - soldering point|||_R_thJS||-||15||25||K/W|
||(Pin 4)||||||||||||
||||||||||||||
||SMD version, device on PCB:|||_R_thJA|||||||||
||@ min. footprint|||||-||80||115|||
||@ 6 cm2cooling area1)|||||-||48||70|||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>~~p~~<br>~~|~~|_V_(BR)DSS<br>~~p~~t<br>~~|~~|tt|-100<br>ttf<br>tt|-<br>tf<br>tt|-<br>tf<br>tt|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-170µA<br>~~p~~<br>~~|~~|_V_GS(th)<br>~~p~~t<br>~~|~~|tt|-1<br>t tf<br>tt|-1.5<br>tf<br>tt|-2<br>tf<br>tt||
|Zero gate voltage drain current<br>_V_DS=-100V,_V_GS=0,_T_j=25°C<br>_V_DS=-100V,_V_GS=0,_T_j=150°C<br>~~|~~<br>~~t~~<br>~~|~~|_I_DSS<br>~~|~~ |tt<br>~~t~~<br>~~|~~<br>||-<br>-<br>tt<br>~~t~~ty<br>**|**|-0.1<br>-10<br>tt<br>ty|-0.2<br>-100<br>tt<br>ty|µA|
|Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>~~|~~<br>~~p~~|_I_GSS<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|-10<br>~~tt~~|-100<br>~~tt~~|nA|
|Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-0.61A<br>~~|~~<br>~~p~~|_R_DS(on)<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|1.5<br>~~tt~~|2.3<br>~~tt~~|Ω|
|Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-0.68A<br>~~p~~<br>~~|~~|_R_DS(on)<br>~~p~~<br>~~|tt~~<br>~~| ~~|-<br>~~tt~~<br> ~~tt~~|1.4<br>~~tt~~<br>~~tt~~|1.8<br>~~tt~~<br>~~tt~~||
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
2016-05-30
Rev.2.0 Page 2
|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics**|||||||||||||||||||
|Transconductance|||_g_fs<br>|_V_DS|≥2*|_I_D|*_R_DS(on)max,<br>_I_D=-0.54A<br>0.5<br>1<br>-<br>~~|~~|||||||||||||||S|
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime<br>Rise time<br>Turn-off delaytime<br>Fall time|||_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>117<br>146<br>_C_oss<br>-<br>27.7<br>34.5<br>_C_rss<br>-<br>12<br>15<br>_t_d(on)<br>_V_DD=-50V,_V_GS=-10V,<br>_I_D=-0.68A,_R_G=6Ω<br>-<br>4.7<br>7<br>_t_r<br>-<br>7.5<br>11.2<br>_t_d(off)<br>-<br>67.4<br>101<br>_t_f<br>-<br>25.9<br>38.9<br>SEE<br>~~=—~~i~~===~~|||||||||||||||pF<br>ns|
|**Gate Charge Characteristics**|||||||||||||||||||
|Gate to source charge||||_Q_gs|||_V_DD=-80V,_I_D=-0.68A|||-||-0.2|||-0.3|||nC|
|Gate to drain charge||||_Q_gd||||||-||-1.87|||-2.8||||
|Gate charge total||||_Q_g|||_V_DD=-80V,_I_D=-0.68A,|||-||-5.1|||-6.4||||
||||||||_V_GS=0 to -10V||||||||||||
|Gateplateau voltage||||_V_(plateau)|||_V_DD=-80V,_I_D=-0.68A|||-||-2.7|||-|||V|
|**Reverse Diode**|||||||||||||||||||
|Inverse diode continuous||||_I_S|||_T_A=25°C|||-||-|||-0.68|||A|
|forward current|||||||||||||||||||
|Inv. diode direct current,|Inv. diode direct current,pulsed|||_I_SM||||||-||-|||-2.72||||
|Inverse diode forward voltage||||_V_SD|||_V_GS=0,_I_F=-0.68A|||-||-0.85|||-1.2|||V|
|Reverse recoverytime||||_t_rr|||_V_R=-50V,_I_F=_l_S,|||-||44.2|||55.3|||ns|
||||||||||||||||||||
|Reverse recoverycharge||||_Q_rr|||d_i_F/d_t_=100A/µs|||-||56.3|||70.4|||nC|
2016-05-30
Rev.2.0 Page 3
**BSP316P**
## **1 Power dissipation**
_P_ tot = _f_ ( _T_ A)
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**----- Start of picture text -----**<br>
1.9<br>W PTET T TTT TTT TT<br>BERCCECCEC EEE<br>1.6 PEPREPEE<br>EET<br>PCCPXEEEEPOCO<br>1.4 NCEE<br>Hitt IN tt<br>1.2<br>FERENCE<br>PECLCEAIY EE<br>1 FEC ENC EEE<br>PPT<br>0.8 PTT TTT TP NET<br>f CCCEEEEEEN TT TTT TQ yyy<br>0.6 FECEEEEPEEPENE<br>0.4 PieF{{f{{{{FECEECCEECECENEPPT TPttPrint tt tN ttTe<br>0.2<br>PEELE<br>0 PEEP EENEEN<br>0 20 40 60 80 100 120 °C 160<br>T A<br>tot<br>P<br>**----- End of picture text -----**<br>
## **2 Drain current**
_I_ D = _f_ ( _T_ A) parameter: | _V_ GS| ≥ 10V
**==> picture [225 x 259] intentionally omitted <==**
**----- Start of picture text -----**<br>
-0.75<br>A<br>SR EeeRRGGRnne<br>Ss i<br>TPN<br>-0.6 PILLINGTT TTT<br>-0.55-0.5 PTTPTT TINETNETE EEE<br>CCAS<br>-0.45 \<br>-0.35-0.4 PTT ET LETT ENEELLE<br>PTT TT ETT NET<br>-0.3<br>PTT TTpT TTX<br>-0.25 \<br>-0.15-0.2 PTETPTT TTTTTT TTT TT TN<br>-0.1 PT T TTTTT<br>-0.050 SCOPTT TTT TET TTT [TTT]<br>0 20 40 60 80 100 120 °C 160<br>T A<br>D<br>I<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D = _f_ ( _V_ DS )
parameter : _D_ = 0 , _T_ A = 25°C
## **4 Transient thermal impedance**
_Z_ thJA = _f_ ( _t_ p)
## parameter : _D_ = _t_ p/ _T_
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**----- Start of picture text -----**<br>
-10 1 10 2<br>e T K/W A=<br>A a ee a eerie<br>t p = 250.0µs<br>Te TT<br>AT S 10 1 | ome TT TTT<br>FHTTT I SCENT mn suZaIts 4<br>-10 0 1 ms<br>F A SREP ET<br> 10 ms 10 0<br>D = 0.50<br>0.20<br>-10 -1 | AW LS ANINS NA TT CTIST T TTISSUESFH EST T S TTT TITS 0.10 Im|<br>NN tt i AN A<br>0.05<br>10 -1 single pulse<br>Seti meeiitimec eit meet a Se 0.02<br>N fl hy 0.01<br>DC<br>-10 -2 Co C o 10 -2 =<br>-10 [-1 ] -10 [0 ] -10 [1 ] -10 [2 ] V -10 [3 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] s 10 [4 ]<br>— V DS — 1 t p<br>I D<br> /<br>DS<br>V<br> =<br>DS(on)<br>R<br>thJA<br>D<br>I Z<br>**----- End of picture text -----**<br>
2016-05-30
Rev.2.0 Page 4
**BSP316P**
## **6 Typ. drain-source on resistance**
## **5 Typ. output characteristic**
_R_ DS(on) = _f_ ( _I_ D)
_I_ D = _f_ ( _V_ DS) parameter: _T_ j =25°C, - _V_ GS
parameter: _T_ j =25°C, - _V_ GS
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**----- Start of picture text -----**<br>
2.4 7<br>A 10V 2.2V<br>5V 2.4V<br>Ω<br>4.4V 2.8V<br>2<br>3.6V Ge = IEE 3.2V<br>3.2V 3.6V<br>1.8<br>2.8V 5 4.4V<br>2.4V 5V<br>1.6 saay 6//4un e en ean<br>2.2V 10V<br>1.4 C= 4 [Le<br>1.2<br>1 3<br>A I<br>0.8<br>2<br>0.6<br>0.4<br>1<br>LSS<br>0.2<br>nnnnnennnAie<br>0 0<br>0 | [cauuunmmmnee] 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.4 0.8 1.2 1.6 | A 2.4<br>-V DS - I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); | ); | V DS| ≥ 2 x | I D| x | x R DS(on)max g fs = f( I D)<br>parameter: T j = 25 °C = 25 °C parameter: T j =25°C<br>3.5 1.8<br>A<br>S<br>TUT) §= 6[[<br>TTT [LAT<br>2.5<br>1.2<br>2<br>He spre<br>0.9<br>TT ATT<br>1.5<br>0.6<br>ICO . eee<br>1<br>PO 0.3 A<br>0.5<br>TOV ELLE<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 0 0.4 0.8 1.2 1.6 2 2.4 A 3.2<br>- V GS - I D<br>D DS(on)<br>I - R<br>I D- g fs<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics**
_I_ D== _f_ ( _V_ GS ); | ); | _V_ DS| ≥ 2 x | _I_ D| x | x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C
Rev.2.0 Page 5
2016-05-30
**BSP316P**
## **10 Typ. gate threshold voltage**
## **9 Drain-source on-state resistance**
_V_ GS(th) = _f_ ( _T_ j)
_R_ DS(on) = _f_ ( _T_ j)
parameter: _V_ GS = _V_ DS
parameter : _I_ D = -0.68 A, _V_ GS = -10 V
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**----- Start of picture text -----**<br>
5<br>Ω<br>PTL ELL EELEL TI<br>4<br>POA)<br>3.5<br>Toor<br>3 CCECEECECEEL) =<br>2.5 PELL EEL ee<br>SEeaeeapeda 98%<br>2<br>1<br>cere of<br>1.5 typ<br>Seer TTT<br>1<br>—<br>0.50 LEEPELL EEELEELL<br>-60 -20 20 60 100 °C 180<br>_ T j<br>DS(on) GS(th)<br>R V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
2.4<br>V<br>98%<br>re<br>2<br>PRS<br>1.8<br>EE typ.<br>1.6<br>FRRARK, HEME<br>1.4<br>1.2 ef<br>2%<br>1 EER<br>PSE ESS<br>0.8<br>of GES<br>0.6<br>~E EEE<br>EEE EE<br>0.4<br>Seeeeeeeeen<br>0.2<br>0 ~EEELELELL<br>-60 -20 20 60 100 °C 160<br>= T j<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
## **11 Typ. capacitances**
## _C_ = _f_ ( _V_ DS)
parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C
## **12 Forward character. of reverse diode**
_I_ F = _f_ (VSD)
parameter: _T_ j
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**----- Start of picture text -----**<br>
10 3 -10 1<br>pF A<br>=== EEE<br>C iss<br>S e EEESEES<br>10 2 -10 0<br>i YefA<br>C oss<br>PX\P | Se | i tf YF | | | tt | | tf<br>C rss<br>| 10 1 Po AS -10 -1 PT TA AALE LE EET<br>COPEERZEE of (Te<br>T j = 25 °C typ<br>T j = 150 °C typ<br>eeP| | | | | | [| ff _OetT PEN TT jj = 25 °C (98%) = 150 °C (98%) Lnae|tt<br>10 0 ========—PLT ELE -10 -2 q Th e LL<br>0 4 8 12 16 20 24 28 V 36 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>= - V DS _ V SD<br>F<br>C I<br>**----- End of picture text -----**<br>
2016-05-30
Rev.2.0 Page 6
**BSP316P**
## **13 Typ. gate charge**
## _V_ GS = _f_ ( _Q_ Gate)
## **14 Drain-source breakdown voltage**
_V_ (BR)DSS = _f_ ( _T_ j)
parameter: _I_ D = -0.68 A pulsed, _T_ j = 25 °C
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2016-05-30
Rev.2.0 Page 7
**BSP316P**
## **Package Outline SOT-223**
## **Footprint**
Soldering type: Reflow soldering
Soldering type: Wave soldering
## **Tape and Reel**
## Dimensions in mm
2016-05-30
Rev.2.0 Page 8
**BSP316P**
## BSP316P
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-06-10|Release of final version|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
9
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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