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BSP316P L6327
Power MOSFET, P Channel, 100 V, 680 mA, 1.8 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-680mA; Drain Source Voltage Vds:-100V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1
- No. of Pins: 4Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 680mA
- Drain Source On State Resistance: 1.8ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.188 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSP316P**
## **SIPMOS[] Small-Signal-Transistor**
|**Small-Signal-Transistor**<br>**Feature**|**Small-Signal-Transistor**|||||**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**||
|---|---|---|---|---|---|---|---|---|---|---|
|**Feature**|||||||||||
|•P-Channel||||||_V_DS||-100|V||
|•Enhancement mode||||||_R_DS(on)<br>1.8|||Ω||
|•Logic Level||||||_I_D||-0.68|A||
|•d_v_/d_t_rated||||||||PG-SOT223-4-1|||
|•Qualified according to AEC Q101<br>¢ Pb-free lead plating; ROHS compliant<br>ZL RoHS<br>><br>AEE||Gate<br>pin1<br>Drain<br>pin 2/4<br>Source<br>pin 3<br>a||||||“os<br>4<br>eafanan|||
|**Type**<br>**Package**|**Tape and Reel Information**||**Marking**|||||**Packaging**|||
|BSP316P<br>PG-SOT223-4-1|L6327: 1000pcs/reel||BSP316P|||||Non dry|||
## **Feature**
- P-Channel
- Enhancement mode
- Logic Level
- d _v_ /d _t_ rated
- ¢ Pb-free lead plating; ROHS • Qualified according to AEC Q101 ZL RoHS >
## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified
|**Maximum Ratingsgss**, atat_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified, unless otherwise specifiedunless otherwise specified||
|---|---|---|---|
|j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**|
|Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-0.68<br>-0.54|A|
|Pulsed drain current<br>_T_A=25°C|_I_D puls|-2.72||
|Reverse diode d_v_/d_t_<br>_I_S=-0.68A,_V_DS=-48V, d_i_/d_t_=-200A/µs,_T_jmax=150°C|d_v_/d_t_|6|kV/µs|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A=25°C|_P_tot|1.8|W|
|Operatingand storage temperature|_T_j , _T_stg|-55... +150|°C|
|IEC climatic category; DIN IEC 68-1|j ,stg|55/150/56||
|ESD Class<br>JESD22-A114-HBM||Class 1a||
2008-03-27
Rev.1.7 Page 1
**BSP316P**
**Thermal Characteristics**
|**Thermal Characteristics**<br>||||||
|---|---|---|---|---|---|
|**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|||||
|Thermal resistance, junction - soldering point|_R_thJS|-|15|25|K/W|
|(Pin 4)||||||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|80|115||
|@ 6 cm2cooling area1)||-|48|70||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>~~p~~<br>~~|~~|_V_(BR)DSS<br>~~p~~t<br>~~|~~|tt|-100<br>ttf<br>tt|-<br>tf<br>tt|-<br>tf<br>tt|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-170µA<br>~~p~~<br>~~|~~|_V_GS(th)<br>~~p~~t<br>~~|~~|tt|-1<br>t tf<br>tt|-1.5<br>tf<br>tt|-2<br>tf<br>tt||
|Zero gate voltage drain current<br>_V_DS=-100V,_V_GS=0,_T_j=25°C<br>_V_DS=-100V,_V_GS=0,_T_j=150°C<br>~~|~~<br>~~t~~<br>~~|~~|_I_DSS<br>~~|~~ |tt<br>~~t~~<br>~~|~~<br>||-<br>-<br>tt<br>~~t~~ty<br>**|**|-0.1<br>-10<br>tt<br>ty|-0.2<br>-100<br>tt<br>ty|µA|
|Gate-source leakage current<br>_V_GS=-20V,_V_DS=0<br>~~|~~<br>~~p~~|_I_GSS<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|-10<br>~~tt~~|-100<br>~~tt~~|nA|
|Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-0.61A<br>~~|~~<br>~~p~~|_R_DS(on)<br>~~|~~<br>|<br>~~p~~<br>~~|tt~~|-<br>**|**<br>~~tt~~|1.5<br>~~tt~~|2.3<br>~~tt~~|Ω|
|Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-0.68A<br>~~p~~<br>~~|~~|_R_DS(on)<br>~~p~~<br>~~|tt~~<br>~~| ~~|-<br>~~tt~~<br> ~~tt~~|1.4<br>~~tt~~<br>~~tt~~|1.8<br>~~tt~~<br>~~tt~~||
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
2008-03-27
Rev.1.7 Page 2
|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|**BSP316P**<br>**Electrical Characteristics**,at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>Cafineon~~er~~<br>~~or~~|
|---|---|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics**||||||||||
|Transconductance||_g_fs<br>|_V_DS|≥2*|_I_D|*_R_DS(on)max,<br>_I_D=-0.54A<br>0.5<br>1<br>-<br>~~|~~|||||||S|
|Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delaytime<br>Rise time<br>Turn-off delaytime<br>Fall time||_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>117<br>146<br>_C_oss<br>-<br>27.7<br>34.5<br>_C_rss<br>-<br>12<br>15<br>_t_d(on)<br>_V_DD=-50V,_V_GS=-10V,<br>_I_D=-0.68A,_R_G=6Ω<br>-<br>4.7<br>7<br>_t_r<br>-<br>7.5<br>11.2<br>_t_d(off)<br>-<br>67.4<br>101<br>_t_f<br>-<br>25.9<br>38.9<br>SEE<br>~~=—~~i~~===~~|||||||pF<br>ns|
|**Gate Charge Characteristics**||||||||||
|Gate to source charge|||_Q_gs||_V_DD=-80V,_I_D=-0.68A|-|-0.2|-0.3|nC|
|Gate to drain charge|||_Q_gd|||-|-1.87|-2.8||
|Gate charge total|||_Q_g||_V_DD=-80V,_I_D=-0.68A,|-|-5.1|-6.4||
||||||_V_GS=0 to -10V|||||
|Gateplateau voltage|||_V_(plateau)||_V_DD=-80V,_I_D=-0.68A|-|-2.7|-|V|
|**Reverse Diode**||||||||||
|Inverse diode continuous|||_I_S||_T_A=25°C|-|-|-0.68|A|
|forward current||||||||||
|Inv. diode direct current, pulsed|||_I_SM|||-|-|-2.72||
|Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=-0.68A|-|-0.85|-1.2|V|
|Reverse recoverytime|||_t_rr||_V_R=-50V,_I_F=_l_S,|-|44.2|55.3|ns|
|Reverse recoverycharge|||_Q_rr||d_i_F/d_t_=100A/µs|-|56.3|70.4|nC|
2008-03-27
Rev.1.7 Page 3
**BSP316P**
## **1 Power dissipation**
## _P_ tot = _f_ ( _T_ A)
## **2 Drain current**
_I_ D = _f_ ( _T_ A)
parameter: | _V_ GS| ≥ 10V
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**----- Start of picture text -----**<br>
BSP 316 P BSP 316 P<br>1.9 -0.75<br>W PLETE TT ETT TTT A<br>BERCCECEEC EEE SR EeERRGGRnne<br>1.6 PEPREPEE Ss i<br>EET TPN<br>PCCP POCO -0.6 PILLINGTTT TTT<br>1.4 -0.55<br>Pte ttNCEEIN tet -0.5 PTT TINETNETE EEE<br>1.2<br>FERENCE SCANS<br>PECLEAIY EE -0.45 \<br>1 PPTFEC TTT TPNENC EEE -0.35-0.4 PTTPTT TTTET LETTTTENENETETL LT<br>0.8<br>-0.3<br>f PTTCCCECEEEEN TT TTT TK yyy PPT TTNT T X<br>0.6 0.4 PEPEFECEEPEF{{f{{{{tPEEPFECEECCEECECEE EPP tttEEN tNIN Ertt -0.25-0.15-0.2-0.1 PTETPOPPAPT T TTTTTTTT TTT\<br>0.2<br>FECEEPP -0.05 SCO<br>0 PEEP E E PEiNT 0 PTT TTT TET TTT [TTT]<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>—_r T A —_r T A<br>3 Safe operating area 4 Transient thermal impedance<br>D == f ( V DS ) ) Z thJA = f ( t p)<br>parameter : D = 0 , T A = 25°C parameter : D = t p/ T<br>-10 1 BSP 316 P 10 2 BSP 316 P<br>K/W<br>e T OAT CnC aa et oer CC<br>A a ee a eerie<br>t p = 250.0µs<br>Tetts 7, TT<br>AT S 10 1 TT | ome TT TN TT<br>-10 0 1 ms<br>F A SORES A TE<br> 10 ms 10 0<br>UI TT<br>D = 0.50<br>Er cA tt CST D<br>0.20<br>-10 -1 | AW LS ANINS NA TH CS T IE TISSUETTT H S T TS TTT TIS 0.10 Im|<br>tN tt i AN A<br>0.05<br>SS 10 -1 O single pulse Tat Se 0.02<br>NI f\ 0.01<br>DC<br>-10 -2 CE C T 10 -2 =<br>-10 [-1 ] -10 [0 ] -10 [1 ] -10 [2 ] V -10 [3 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] s 10 [4 ]<br>— V DS — 1 t p<br>I D<br> /<br>DS<br>V<br> =<br>DS(on)<br>R<br>tot<br>P I D<br>thJA<br>D<br>I Z<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D == _f_ ( _V_ DS ) )
parameter : _D_ = 0 , _T_ A = 25°C
Rev.1.7 Page 4
2008-03-27
**BSP316P**
## **5 Typ. output characteristic**
## **6 Typ. drain-source on resistance**
_I_ D = _f_ ( _V_ DS)
_R_ DS(on) = _f_ ( _I_ D)
parameter: _T_ j =25°C, - _V_ GS
parameter: _T_ j =25°C, - _V_ GS
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**----- Start of picture text -----**<br>
2.4 7<br>A 10V 2.2V<br>5V 2.4V<br>Ω<br>4.4V 2.8V<br>2 3.6V HHA = 3.2V<br>3.2V 3.6V<br>1.8<br>2.8V 5 4.4V<br>2.4V 5V<br>1.6<br>2.2V Rae | 10V<br>1.4 Ife= 4 Ip<br>1.2<br>1 3<br>ee<br>0.8<br>2<br>0.6<br>0.4<br>1<br>ESS<br>0.2<br>ASS TT|<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0.4 0.8 1.2 1.6 A 2.4<br>-V DS - I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); | ); | V DS|≥ 2 x |≥ 2 x | 2 x | I D| x | x R DS(on)max g fs = f( I D)<br>parameter: T j = 25 °C = 25 °C parameter: T j =25°C<br>3.5 1.8<br>A<br>S<br>TTT )=s [Pa<br>2.5<br>TTT Fer<br>1.2<br>2<br>A TTT<br>0.9<br>1.5<br>A Bette<br>0.6<br>1<br>IC Ah<br>CAAT 0.3<br>0.5<br>TOY ELL LLL<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 0 0.4 0.8 1.2 1.6 2 2.4 A 3.2<br>- V GS - I D<br>D DS(on)<br>I - R<br>I D- g fs<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics**
_I_ D== _f_ ( _V_ GS ); | ); | _V_ DS|≥ 2 x |≥ 2 x | 2 x | _I_ D| x | x _R_ DS(on)max parameter: _T_ j = 25 °C = 25 °C
Rev.1.7 Page 5
2008-03-27
**BSP316P**
## **9 Drain-source on-state resistance**
_R_ DS(on) = _f_ ( _T_ j)
parameter : _I_ D = -0.68 A, _V_ GS = -10 V
## **10 Typ. gate threshold voltage**
_V_ GS(th) = _f_ ( _T_ j)
parameter: _V_ GS = _V_ DS
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**----- Start of picture text -----**<br>
BSP 316 P<br>5 2.4<br>V<br>Ω<br>98%<br>PTL ELL EELEL TI re<br>2<br>4<br>POA) PRS<br>1.8<br>3.5<br>Toor BE typ.<br>1.6<br>3 CCECEPCECEEL) = FR RARK, HEE<br>1.4<br>2.5 PELL EEL eet 1.2 See eee<br>2%<br>98% 1<br>2<br>1 SEeaeeascda PSE ESS<br>0.8<br>ocean of GCOS<br>1.5 typ<br>0.6<br>Seer TTT ~E EEE<br>1<br>= EEE ELE<br>0.4<br>0.5 LEE Seeeeeeeeen<br>0.2<br>0 PELL EEELEELL 0 ~EEELELELL<br>-60 -20 20 60 100 °C 180 -60 -20 20 60 100 °C 160<br>_ T j _ T j<br>DS(on) GS(th)<br>R V<br>**----- End of picture text -----**<br>
## **11 Typ. capacitances**
## _C_ = _f_ ( _V_ DS)
parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C
## **12 Forward character. of reverse diode**
_I_ F = _f_ (VSD)
parameter: _T_ j
**==> picture [479 x 266] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 3 -10 1 BSP 316 P<br>pF A<br>===I C iss EEEEEESEES<br>10 2 -10 0<br>i Yeof Aee<br>C oss<br>PX | Se | i tf YF | | | tt | tT tt<br>C rss<br>| 10 1 Po AS -10 -1 PT TAAALE EE EET<br>COPEERZEE of (Te<br>T j = 25 °C typ<br>T j = 150 °C typ<br>eeP| | | | | | [| ff _OntT PEN TT jj = 25 °C (98%) = 150 °C (98%) Lnae|tt<br>10 0 ========—PLT ELE -10 -2 q Th e LL<br>0 4 8 12 16 20 24 28 V 36 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>= - V DS _ V SD<br>F<br>C I<br>**----- End of picture text -----**<br>
Rev.1.7 Page 6
2008-03-27
**BSP316P**
## **13 Typ. gate charge**
_V_ GS = _f_ ( _Q_ Gate)
## **14 Drain-source breakdown voltage**
_V_ (BR)DSS = _f_ ( _T_ j)
parameter: _I_ D = -0.68 A pulsed, _T_ j = 25 °C
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**----- Start of picture text -----**<br>
BSP 316 P<br>-16 POOL LLL<br>V<br>P COS<br>PEECELEEEEL<br>-12 FOECCLELET VA<br>BRA<br>-10 SGSGGGney// one<br>PCCP AE<br>-8<br>POOP<br>POECCL ZC<br>-6<br>POCO Ae<br>POCA<br>-4 anne,SKK 0.2 0.5 VV DS maxDS max PPPPEEL<br>PeyN<br>-2 0.8 V DS max<br>EEE FEELPOE<br>PEEL FEEL<br>0<br>0 1 2 3 4 5 6 7 nC 8.5<br>|Q G |<br>GS<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
BSP 316 P<br>-120<br>V<br>SEEeEGeEneee<br>CEE EET<br>-114 FEE eee<br>-112<br>ase<br>-110<br>EEA<br>-108<br>ae<br>-106<br>Seana<br>-104<br>ROE aeeeee<br>-102<br>SSE aeeeeee<br>-100 /<br>-98 PT] TATTT<br>-96 -94 P|ALTTT Ty<br>PIALALETTT<br>-92 -90 PEEELL L L L<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>
2008-03-27
Rev.1.7 Page 7
**BSP316P**
2008-03-27
Rev.1.7 Page 8
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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