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BSP300H6327XUSA1
Power MOSFET, N Channel, 800 V, 190 mA, 15 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: SIPMOS
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.8W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 15ohm
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 190mA
- Drain Source On State Resistance: 15ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.415 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSP300**
## **SIPMOS[ ® ] Small-Signal Transistor**
- N channel
- Enhancement mode
- Avalanche rated
- _V_ = 2.0... 4.0 V GS(th)
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
|Pb-free lead plating; RoHS compliant<br>•<br>• Qualified according to AEC Q101|Pb-free lead plating; RoHS compliant<br>•<br>• Qualified according to AEC Q101|Pb-free lead plating; RoHS compliant<br>•<br>• Qualified according to AEC Q101|Pb-free lead plating; RoHS compliant<br>•<br>• Qualified according to AEC Q101||drain pins 2, 4<br>at)|drain pins 2, 4<br>at)||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|• Qualified according to AEC Q101<br> Halogenfree according to IEC61249221<br>ZZ<br>RoHS;<br>(G) Halogen-Free<br>Kage*e/||||_|at)<br>source pin3||Pin 1<br>G||Pin 2<br>D|Pin 3<br>S|Pin 4<br>D|
|**Type**<br>**_V_DS**|**_I_D**||**_R_DS(on)**|||**Package**|||**Marking**|||
|BSP300<br>800 V|0.19 A||20Ω|||PG-SOT223|||BSP300|||
|||||||||||||
|**Type**<br>**RoHS compliant**|||**Tape and Reel Information**|**Tape and Reel Information**|||**Packaging**|||||
|BSP300<br> YesH|H|H|H6327||||Dry|||||
- Halogenfree according to IEC61249221
|**Parameter**|**Symbol**|**Values**|**Unit**|
|---|---|---|---|
|Continuous drain current<br>_T_A= 25 °C|_I_D<br>pp|0.19<br>pp|A|
|DC drain current, pulsed<br>_T_A= 25 °C|_I_Dpuls|0.76||
|Avalanche energy, single pulse<br>_I_D= 0.8 A,_V_DD= 50 V,_R_GS= 25Ω<br>_L_= 105 mH,_T_j= 25 °C|_E_AS|36|mJ|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A= 25 °C|_P_tot<br>Pop|1.8<br>Pop|W|
|ESD Class<br>JESD22-A114-HBM||Class 1a||
Page 1
2012-11-29
Rev 2.2
**BSP300**
## **Maximum Ratings**
|**Maximum Ratings**|||
|---|---|---|
|**Parameter**|**Symbol**<br>**Values**<br>es|**Unit**|
|Chip or operating temperature|_T_j<br>-55 ... + 150<br>es|°C|
|Storage temperature|_T_stg<br>-55 ... + 150<br>es||
|Thermal resistance, chip to ambient air1)|_R_thJA<br>≤70<br>es|K/W|
|Thermal resistance, junction-soldering point1)|_R_thJS<br>≤14<br>es||
|DIN humidity category, DIN 40 040|E<br>es||
|IEC climatic category, DIN IEC 68-1|55 / 150 / 56<br>es||
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm[2] copper area for drain connection
> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified
|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>eeeee|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>eeeee|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>eeeee|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>eeeee|
|---|---|---|---|
|**Static Characteristics**||||
|Drain- source breakdown voltage<br>_V_GS= 0 V,_I_D= 0.25 mA,_T_j= 25 °C<br>Gate threshold voltage<br>_V_GS=_V_DS,_I_D= 1 mA<br>Zero gate voltage drain current<br>_V_DS= 800 V,_V_GS= 0 V,_T_j= 25 °C<br>_V_DS= 800 V,_V_GS= 0 V,_T_j= 125 °C<br>Gate-source leakage current<br>_V_GS= 20 V,_V_DS= 0 V<br>Drain-Source on-state resistance<br>_V_GS= 10 V,_I_D= 0.19 A|_V_(BR)DSS<br>800<br>-<br>-<br>_V_GS(th)<br>2<br>3<br>4<br>_I_DSS<br>-<br>-<br>10<br>0.1<br>100<br>1<br>_I_GSS<br>-<br>10<br>100<br>_R_DS(on)<br>-<br>15<br>20<br>~~P|~~<br>| ~~|~~<br>Coe<br>|<br>ft |<br>P|<br>||||V<br>µA<br>nA<br>Ω|
Page 2
2012-11-29
Rev 2.2
**BSP300**
> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified
|Transconductance<br>_V_DS≥2*_I_D *_R_DS(on)max,_I_D= 0.19 A|_g_fs<br>~~|~~|0.06<br>~~|~~<br>fT<br>||0.27<br>~~|~~<br>fT<br>|||-<br>~~|~~<br>||S|
|---|---|---|---|---|---|
|Input capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_iss<br>~~|~~|-<br>fT<br>~~|~~<br>|<br>fT|170<br>fT<br>~~|~~<br>||<br>fT|230<br>~~|~~<br>||pF|
|Output capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_oss<br>||-<br>|<br>|<br>fT<br>||20<br>| |<br>|<br>fT<br>|||30<br>|<br>|<br>|||
|Reverse transfer capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_rss<br>||-<br>fT<br>|<br>||10<br>fT<br>|<br>|||15<br>|<br>|||
|Turn-on delay time<br>_V_DD= 30 V,_V_GS= 10 V,_I_D= 0.25 A<br>_R_GS= 50Ω|_t_d(on)<br>tt|-<br>|<br>tt|7<br>| |<br>tt|11<br>|<br>tt|ns|
|Rise time|_t_r<br>tt|tt|tt|tt||
||tt|tt|tt|tt||
||tt|-<br>tt|16<br>tt|24<br>tt||
||_t_d(off)<br>tt|tt|tt|tt||
||tt|tt|tt|tt||
||tt<br>et|-<br>tt<br>ettd|27<br>tt<br>td|36<br>tt<br>td||
||_t_f<br>et|ettd|td|td||
||et|ettd|td|td||
||et|-<br>ettd|21<br>td|28<br>td||
Page 3
2012-11-29
Rev 2.2
**BSP300**
> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified
|Inverse diode continuous forward current<br>_T_A= 25 °C|_I_S<br>~~|~~|-<br>~~|~~<br>|<br>tT|-<br>~~|~~<br>||<br>tTft|0.19<br>~~|~~<br>|<br>ft|A|
|---|---|---|---|---|---|
|Inverse diode direct current,pulsed<br>_T_A= 25 °C|_I_SM<br>P||-<br>|<br>P|<br>tT<br>||-<br>| |<br>P|<br>tTft<br>|||0.76<br>|<br>P|<br>ft<br>|||
|Inverse diode forward voltage<br>_V_GS= 0 V,_I_F= 0.38 A,_T_j= 25 °C|_V_SD<br>||-<br>tT<br>|<br>|<br>||1<br>tT ft<br>|<br>||<br>|||1.4<br>ft<br>|<br>|<br>||V|
|Reverse recovery time<br>_V_R= 30 V,_I_F=_l_S= 0 , d_i_F/d_t_= 100 A/µs|_t_rr<br>||-<br>|<br>|<br>|<br>fT|95<br>| |<br>|<br>||<br>fTft|-<br>|<br>|<br>|<br>ft|ns|
|Reverse recovery charge<br>_V_R= 30 V,_I_F=_l_S= 0 , d_i_F/d_t_= 100 A/µs|_Q_rr<br>P||-<br>|<br>P|<br>fT|0.25<br>| |<br>P|<br>fTft|-<br>|<br>P|<br>ft|µC|
Page 4
2012-11-29
Rev 2.2
**BSP300**
## **Power dissipation**
_P_ tot = ƒ( _T_ A)
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2.0<br>W PEELE EEL<br>PRACCCEEELCEELee<br>P 1.6 POCORN ECC<br>tot FOCAL ELEC EL<br>FOC CNCEE ECC<br>1.4<br>FCCCCNEEECCEEL ee<br>1.2 COCR<br>FCCC COAE ECC EL<br>1.0 FCCCFCCC CCEECENCCE REE<br>0.8 FCCCFOC CCEEEYCEE ENCE CEE<br>FCCC<br>0.6<br>POC CECC E E ECEX REELEel<br>FCCC CEEE ECO<br>0.4<br>FOCPEPECCE CCE NE EE<br>0.2<br>FCCC CEEE ECCTNE<br>0.0 COC CEE EEC<br>0 20 40 60 80 100 120 °C 160<br>T<br>—P A<br>**----- End of picture text -----**<br>
## **Safe operating area**
_I_ D = ƒ( _V_ DS) parameter: _D_ = 0.01 _, T_ C = 25°C
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10 0 t p = 760.0µs<br> 1 ms<br>A<br>I 10 ms<br>D a)<br>10 -1 /|<br>Se ee<br>EEA<br>\<br>IIT<br>EIN TT TT<br>10 -2 Jf Pt PE NA<br>er oe ae<br>Poot PT Pe ey Na<br>EN<br>DC<br>10 -3 UTM LLIN EEE EET<br>0 1 2 3<br>10 10 10 V 10<br>—P V DS<br>I D<br> /<br>DS<br>V<br> =<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## **Drain current**
_I_ D = ƒ( _T_ A) parameter: _V_ GS ≥ 10 V
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0.20<br>A POOR<br>POCREEECCLEEEL<br>I 0.16 FCCC NCCCCLEEE<br>D FCCC CENECE<br>FCCC CE CCE<br>0.14<br>FCCC CEC ENE<br>0.12 ECCCCEE<br>FECESCC NCEE<br>0.10 COCCEECEOCENERE<br>0.08 FCCC CEEECCCEFCCC CEEECCCeP NEL<br>ao<br>0.06<br>FCCC CEE E CCCCLESEEY<br>FCCC CEE ECCLES<br>0.04<br>FCCC CEEECCLErN<br>0.02<br>F CCCCCCC CE E EECEEEelCECE<br>0.00 COCO CE EEC ClEEeei<br>0 20 40 60 80 100 120 °C 160<br>T<br>— A<br>**----- End of picture text -----**<br>
**Transient thermal impedance** _Z_ th JA = ƒ( _t_ p) parameter: _D = t_ / _T_ p
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10 2<br>K/W<br>10 1<br>Z<br>thJC aati sti atc aliiATORett<br>10 0<br>EEE SHES RTT SSCS ETE<br>COM NTNU PSCC<br>10 -1 CCIIDSA<br>SS<br>D = 0.50<br>10 -2 CUSINTSSS te<br>0.20<br>M00 0.10 tl<br>10 -3 LTAEeTIM ETT TTI TUNSHSMS 0.05 Ilaa<br>single pulse 0.02<br>10 -4 ZC TTS 0.01 Il<br>a<br>10 -5 CCCICYAN CETTETTTTUTTI TVET CETTE ETITTT)YETI TET<br>-8 -7 -6 -5 -4 -3 -2 -1 0<br>10 10 10 10 10 10 10 10 s 10<br>— t p<br>**----- End of picture text -----**<br>
Page 5
2012-11-29
Rev 2.2
**BSP300**
## **Typ. output characteristics**
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**----- Start of picture text -----**<br>
Typ. output characteristics Typ. drain-source on-resistance<br>D = ƒ( = ƒ(ƒ( V DS)) R DS (on) = ƒ( I D)<br>parameter: t p = 80 µs , = 80 µs , T j = 25 °C parameter: t p = 80 µs, T j = 25 °C<br>l<br>0.45 65<br>P tot = 2W<br>A TTT k j i h g f e d Ω Tee a b<br>V GS [V] 55<br>I D 0.35 yy a 4.0 R DS (on) 50 EPEC EEC<br>b 4.5<br>c 5.0 45<br>0.30 c d 5.5<br>| on) {eee 40 ALTE TTT VA TT<br>e 6.0<br>0.25 coe f «| 6.5 ot 35 EEE ca<br>g 7.0<br>0.20 WI h 7.5 30 CCCP<br>i 8.0 c<br>25<br>We j 9.0 eeeCEL<br>0.15<br>b k 10.0 20 d<br>0.10 l 20.0 15 k e ij g h f<br>10<br>0.05 [A a TMT V GS [V] = LL.<br>5 4.a 05 5.0b 5.5c 6.0d 6.5e 7.0f 7.5g 8.0h 9.0i 10.0j 20.0k<br>0.00 YO 0<br>0 4 8 12 16 V 24 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34<br>V I<br>DS D<br>Typ. transfer characteristics I D = f ( V GS)) Typ. forward transconductance g fs = f ( I D)<br>parameter: t p = 80 µs = 80 µs parameter: t p = 80 µs,<br>DS ≥ 2 x I D x x R DS(on)max V DS ≥ 2 x I D x R DS(on)max<br>1.0 0.50<br>A TOOT (Ge S ETT<br>COCCPAA)<br>I D 0.8 g fs 0.40<br>0.7 0.35<br>f POPPA), EO<br>0.6 0.30<br>FOP) ft Ce<br>0.5 COCEACELE = 0.25 ECC<br>0.4 COCECACEEE = 0.20 CeCe<br>0.3 COCECPCELE = 0.15 Ge<br>0.2 COCEPECEEE = 0.10 Pee<br>0.1 0.05<br>S000e e<br>0.0 0.00<br>COOP =<br>0 1 2 3 4 5 6 7 8 V 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8<br>V I<br>GS D<br>**----- End of picture text -----**<br>
_I_ D = ƒ( = ƒ(ƒ( _V_ DS))
parameter: _t_ p = 80 µs , = 80 µs , _T_ j = 25 °C
> **Typ. transfer characteristics** _I_ D _= f_ ( _V_ GS)) parameter: _t_ p = 80 µs = 80 µs _V_ DS ≥ 2 x _I_ D x x _R_ DS(on)max
**Rev** 1.02.21 Page 16
202005-10-2712-11-29
**BSP300**
## **Drain-source on-resistance**
_R_ DS (on) = ƒ( _T_ j)
parameter: _I_ D = 0.19 A, _V_ GS = 10 V
## **Gate threshold voltage**
_V_ GS (th) = ƒ( _T_ j)
parameter: _V_ GS = _V_ DS, _I_ D = 1 mA
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**----- Start of picture text -----**<br>
50<br>4.6<br>Ω TTT ETT V elf || EE 98%<br>4.0<br>R 40 V<br>DS (on) GS(th) 3.6<br>PEPE) = FERRREEEREE<br>35<br>3.2 typ<br>fe COOP), BEER PERSE<br>30 GOCCP 2.8<br>ee) ot GBRSREREEEE<br>25 ETE 98% 2.4 SERRE<br>2%<br>2.0<br>20 COCer typ RRR Sat<br>1.6<br>SES<br>15<br>eer [TT] er ) BRREEEEEEEE<br>1.2<br>ET a<br>10 cerTT |<br>0.8<br>5<br>TET y TT Ty 0.4 EERE<br>0 0.0<br>TET EET EET |EEE EEE<br>-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160<br>—_— r T j —__ P T j<br>**----- End of picture text -----**<br>
## **Typ. capacitances**
_C_ = _f_ ( _V_ DS)
parameter: _V_ GS=0V, _f_ = 1 MHz
**Forward characteristics of reverse diode** _I_ F = ƒ( _V_ SD) parameter: _T_ j _, t_ p = 80 µs
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**----- Start of picture text -----**<br>
10 3 10 0<br>pF po A if FO<br>C I<br>Ro C F Pl i¢AA IAL TTT tt |<br>iss<br>10 2 10 -1<br>+ Pf Le<br>VN) yy<br>oo C oss On 2 Se<br>10 1 10 -2<br>| mt | C fe HE<br>rss T j = 25 °C typ<br>T j = 150 °C typ<br>; | [| | | ff ff | ye T j = 25 °C (98%) Lt<br>Pot | | rE — T j = 150 °C (98%) ann|<br>10 0 10 -3<br>EET ELLE Th an<br>0 5 10 15 20 25 30 V 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0<br>—_a V DS —_P V SD<br>**----- End of picture text -----**<br>
Page 7
2012-11-29
Rev 2.2
**BSP300**
**Avalanche energy** _E_ AS = ƒ( _T_ j) parameter: _I_ D = 0.8 A, _V_ DD = 50 V _R_ GS = 25 Ω, _L_ = 105 mH
**Drain-source breakdown voltage** _V_ (BR)DSS = ƒ( _T_ j)
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**----- Start of picture text -----**<br>
38 960<br>mJ CCELLELELELILELT V TTT<br>BEECHER) LITT<br>32 920<br>E V<br>AS 28 ACEC (BR)DSS | 900 TETCe<br>COVE TTT tty<br>E EEE Eee PF] ft |i] ty<br>880<br>FONE tz<br>24<br>FORCEECECE CE CEE ELEEr y, VA<br>860<br>20<br>FOEREECECE ELE PTT<br>840<br>FPCOENCECECE [TELAT<br>FEO ELE S<br>16 EEE EEE 820 PT LLL HELL<br>EOCENE TPT TIAT ELT<br>12 FCEPEXFCCC ENCECELE ELE 800 P| i WAtl<br>780<br>8 PP tt dtl<br>EET, NEE EET TT PTA TELL<br>PEON 760 )<br>4<br>FEE ESSECMN 740 4<br>0 720<br>FEE ECCS SEE FLEE ELLE EEL<br>20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160<br>T T<br>j j<br>**----- End of picture text -----**<br>
Page 8
2012-11-29
Rev 2.2
**BSP300**
Page 9
2012-11-29
Rev 2.2
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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