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BSP299H6327XUSA1
Power MOSFET, N Channel, 500 V, 400 mA, 3.1 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- No. of Pins: 4Pins
- Channel Type: N Channel
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1.8W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 3.1ohm
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 400mA
- Drain Source On State Resistance: 3.1ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.266 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSP299**
## **SIPMOS[ ®] Small-Signal Transistor**
- N channel
- Enhancement mode
- Avalanche rated
- _V_ = 2.1 ... 4.0 V GS(th)
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
- Halogenfree according to IEC61249221
1 Pin 1 Pin 2 Pin 3 Pin 4 G D S D source pin3 +++
|**Type**||**_V_DS**|**_I_D**|**_R_DS(on)**|**Package**||**Marking**|
|---|---|---|---|---|---|---|---|
|BSP 299|BSP 299|500 V|0.4 A|4Ω|SOT-223||BSP299|
|||||||||
|**Type**||**Pb-free**||**Tape and Reel Information**||**Packaging**||
|BSP 299|BSP 299|Yes||H6327: 1000 pcs / reel||Dry||
|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|**Unit**|
|Continuous drain current<br>_T_A= 25 °C|_I_D|0.4|A|
|DC drain current, pulsed<br>_T_A= 25 °C|_I_Dpuls|1.6||
|Avalanche energy, single pulse<br>_I_D= 1.2 A,_R_GS= 25Ω<br>_T_ j= 25 °C|_E_AS|130|mJ|
|Gate source voltage|_V_GS|±20|V|
|Power dissipation<br>_T_A= 25 °C|_P_tot|1.8|W|
|ESD Class<br>JESD22-A114-HBM||Class 1b||
Rev 2.4 1
2012 - 1129
**BSP299**
## **Maximum Ratings**
|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**<br>ee|**Values**<br>ee|**Unit**|
|Chip or operating temperature|_T_j<br>ee|-55 ... + 150<br>ee|°C|
|Storage temperature|_T_stg<br>es|-55 ... + 150<br>es||
|Thermal resistance, chip to ambient air1)|_R_thJA<br>es|≤70<br>es|K/W|
|Therminal resistance, junction-soldering point|Therminal resistance, junction-soldering point_R_thJS<br>es|≤25<br>es||
|DIN humidity category, DIN 40 040|ee|E<br>ee||
|IEC climatic category, DIN IEC 68-1|es|55 / 150 / 56<br>es||
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm[2] copper area for drain connection
> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified
|Drain- source breakdown voltage<br>_V_GS= 0 V,_I_D= 0.25 mA,_T_j= 0 °C|_V_(BR)DSS<br>~~|~~|500<br>~~|~~<br>fT|-<br>~~|~~<br>fT||-<br>~~|~~<br>||V|
|---|---|---|---|---|---|
|Gate threshold voltage<br>_V_GS=_V_DS,_I_D= 1 mA|_V_GS(th)<br>COO|2.1<br>fT<br>COO|3<br>fT |<br>COO|4<br>|<br>COO||
|Zero gate voltage drain current<br>_V_DS= 500 V,_V_GS= 0 V,_T_j= 25 °C<br>_V_DS= 500 V,_V_GS= 0 V,_T_j= 125 °C|_I_DSS<br>COO<br>||-<br>-<br>COO<br>ft|10<br>0.1<br>COO<br>ft|100<br>1<br>COO<br>ft|µA|
|Gate-source leakage current<br>_V_GS= 20 V,_V_DS= 0 V|_I_GSS<br>||-<br>ft<br>||10<br>ft<br>|||100<br>ft<br>||nA|
|Drain-Source on-state resistance<br>_V_GS= 10 V,_I_D= 0.4 A|_R_DS(on)<br>| <br>||-<br> ft<br>|<br>||3.1<br>ft<br>|<br>|||4<br>ft<br>|<br>||Ω|
Rev 2.4 2 2012 - 11 - 29
**BSP299**
> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified
|Transconductance<br>_V_DS≥2*_I_D *_R_DS(on)max,_I_D= 0.4 A|_g_fs<br>~~|~~|0.3<br>~~|~~<br>|<br>||1.2<br>~~|~~<br>|~~|~~<br>||-<br>~~|~~<br>~~|~~|S|
|---|---|---|---|---|---|
|Input capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_iss<br>~~|~~|-<br>|<br>~~|~~<br>|<br>||300<br>| ~~|~~<br>~~|~~<br>|<br>|||400<br>~~|~~<br>~~|~~<br>||pF|
|Output capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_oss<br>ef]|-<br>|<br>ef]<br>|<br>||40<br>|<br>ef]<br>||<br>||60<br>ef]<br>|||
|Reverse transfer capacitance<br>_V_GS= 0 V,_V_DS= 25 V,_f_= 1 MHz|_C_rss<br>|||-<br>|<br>||<br>|<br>||15<br>| |<br>||<br>|<br>|||25<br>|<br>||<br>|||
|Turn-on delay time<br>_V_DD= 30 V,_V_GS= 10 V,_I_D= 0.3 A<br>_R_GS= 50Ω|_t_d(on)<br>et|-<br>|<br>et<br>|<br>||8<br>|<br>et<br>||<br>||12<br>et<br>||ns|
|Rise time|_t_r<br>et||<br>et<br>||| |<br>et<br>|||<br>et||
||et|et<br>||et<br>||et||
||et|-<br>et<br>|<br>||15<br>et<br>|<br>||22<br>et||
||_t_d(off)<br>et||<br>et<br>|||<br>et<br>||et||
||et|et<br>||et<br>||et||
||et|-<br>et<br>|<br>||55<br>et<br>|<br>|fl|70<br>et<br>fl||
||_t_f<br>et||<br>et<br>|||<br>et<br>|fl|et<br>fl||
||et|et<br>||et<br>|fl|et<br>fl||
||et|-<br>et<br>||30<br>et<br>|fl|40<br>et<br>fl||
Rev 2.4 3 2012 - 11 - 29
**BSP299**
> **Electrical Characteristics,** at _T_ j = 25°C, unless otherwise specified
|**Reverse Diode**||||||
|---|---|---|---|---|---|
|Inverse diode continuous forward current<br>_T_A= 25 °C|_I_S<br>~~|~~|-<br>~~|~~<br>||-<br>~~|~~<br>||0.4<br>~~|~~|A|
|Inverse diode direct current,pulsed<br>_T_A= 25 °C|_I_SM<br>~~|~~|-<br>~~|~~<br>|<br>tT|-<br>~~|~~<br>|<br>tT|1.6<br>~~|~~||
|Inverse diode forward voltage<br>_V_GS= 0 V,_I_F= 0.8 A,_T_j= 25 °C|_V_SD<br>||-<br>|<br>|<br>tT|0.9<br>|<br>|<br>tT|1.2<br>||V|
|Reverse recovery time<br>_V_R= 100 V,_I_F=_l_S,d_i_F/d_t_= 100 A/µs|_t_rr<br>||-<br>tT<br>|<br>||300<br>tT<br>|<br>|ft|-<br>|<br>ft|ns|
|Reverse recovery charge<br>_V_R= 100 V,_I_F=_l_S,d_i_F/d_t_= 100 A/µs|_Q_rr<br>||-<br>|<br>||2.5<br>|<br>|ft|-<br>|<br>ft|µC|
4 2012 - 11 - 29
Rev 2.4
**BSP299**
## **Power dissipation**
_P_ tot = ƒ( _T_ A)
## **Drain current**
_I_ D = ƒ( _T_ A) parameter: _V_ GS ≥ 10 V
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**Safe operating area** _I_ D=f( _V_ DS) parameter : _D_ = 0, _T_ C=25°C
**Transient thermal impedance** _Z_ th JA = ƒ( _t_ p) parameter: _D = t_ / _T_ p
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10 2<br>K/W<br>BA ni<br>10 1<br>Cae<br>Z<br>thJC<br>10 0<br>10 -1<br>D = 0.50<br>10 -2<br>CCST 0.20<br>0.10<br>Siamarante Sh<br>10 -3<br>0.05<br>LATIN single pulse TI TN 0.02 Ht<br>10 -4 0.01<br>i<br>FHF HHH Hrr<br>10 -5 iia<br>-8 -7 -6 -5 -4 -3 -2 -1 0<br>10 10 10 10 10 10 10 10 s 10<br>— t<br>p<br>**----- End of picture text -----**<br>
Rev 2.4 5 2012 - 11 - 29
**BSP299**
## **Typ. output characteristics**
## **Typ. drain-source on-resistance**
_I_ D = ƒ( = ƒ(ƒ( _V_ DS)) parameter: _V_[[= 25 °C]] GS[[,]] _[[ T]]_[[j]]
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D = ƒ( = ƒ(ƒ( V DS)) R DS (on) = ƒ( I D)<br>parameter: V [[= 25 °C]] parameter: V [= 25 °C]<br>GS [[,]] [[ T]] [[j]] GS [,] [ T] [j]<br>0.9<br>0.9 14<br>0.9AA P tot10V = 2W5V kifdhejg 13<br>0.80.8 lc b Ω a 4V<br>A 4.5V4.5V 12<br>V GS [V] 11<br>0.7<br>I D 0.70.7 a 4.0 R DS (on) 1011<br>b 4.5 10<br>0.60.6 c 5.0 9<br>0.6 4V4V d 5.5 9<br>0.50.5 e 6.0 8 8<br>0.5 a f 6.5 7<br>0.4 g 7.0 7<br>0.40.4 h 7.5 6 6 4.5V b<br>i 8.0 CCE<br>0.3 5<br>0.3 j 9.0 5<br>0.3<br>k 10.0 4 4<br>0.20.2 l 20.0 l jh 10V d figcke<br>0.2 3 3<br>0.10.1 2 2<br>0.1 V GS [V] =<br>0 1 1 4.0a 4.5b 5.0c 5.5d 6.0e 6.5f 7.0g 7.5h 8.0i 9.0j 10.0k 20.0l<br>0<br>0.0 0 0 2 2 4 4 6 6 8 8 10 10 12 12VV 14 14 0 0<br>0 2 4 6 8 0.00 0.10 0.20 0.30 0.40 A 0.60<br>10 12 V 16 0 0.1 0.2 0.3 0.4 0.5 A 0.6<br>I<br>V DS D I D<br>**----- End of picture text -----**<br>
Typ. transfer characteristics _I_ D _= f_ ( _V_ GS) parameter: _t_ p = 80 µs
Typ. forward transconductance _g_ fs = _f_ ( _I_ D) parameter: _t_ p = 80 µs,
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2.6 2.6<br>2.2A -CEEOLELL 2.2S EEE<br>I D 2.0 —CEAOILELL g fs 2.0 “COLLATE<br>1.8 1.8<br>fe 1.6 -CELGLELLGomes too 1.6 “CELL VELL<br>1.41.2 —-CELGLEL—CEAPL—CEOIL ELL ELL 1.41.2 “CLV—CZELELELELL“ALLELE CELE<br>1.00.80.6 —COOIEL“CECE ELL 1.00.80.6 -VECEEEELEEE EEE<br>0.4 —-CELELELL—CEAEL ELL 0.4 TOEEEEL TLLEEEELELLLL ELL<br>0.2 0.2<br>0.0 0.0<br>~-CEPLLELL POCCEEEELe<br>0 1 2 3 4 5 6 7 8 V 10 0.0 0.4 0.8 1.2 1.6 A 2.2<br>V I<br>GS D<br>**----- End of picture text -----**<br>
Rev 2.4 6 2012 - 11 - 29
**BSP299**
## **Drain-source on-resistance**
_R_ DS (on) = ƒ( _T_ j) parameter: _I_ D = 0.4 A, _V_ GS = 10 V
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10<br>11<br>Ω 10 f<br>9<br>R 8<br>DS (on)<br>7 8 / f<br>98%<br>7<br>f<br>6<br>6<br>5 5 98% Z /<br>t yp typ<br>4 4<br>a<br>3 ,<br>3 4<br>2 y<br>2<br>1<br>1<br>0<br>0 -60 -20 20 60 100 140 180<br>-60 -20 20 60 100 °C 160<br>T<br>j<br>**----- End of picture text -----**<br>
## **Typ. capacitances**
## _C_ = _f_ ( _V_ DS)
## parameter: _V_ GS=0V, _f_ = 1 MHz
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10 1<br>nF SSSSS<br>C<br>Pot | | rE<br>10 0<br>p+ Ett<br>C<br>iss<br>a a ee<br>10 -1<br>NRE<br>C<br>oss<br>NT<br>| | Poet | | C<br>rss<br>10 -2<br>tt Ey Er<br>0 5 10 15 20 25 30 V 40<br>V<br>DS<br>**----- End of picture text -----**<br>
## **Gate threshold voltage**
_V_ GS (th) = ƒ( _T_ j) parameter: _V_ GS = _V_ DS, _I_ D = 1 mA
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**----- Start of picture text -----**<br>
4.6 a<br>V a 98%<br>4.0 FER EEE<br>fe<br>V<br>GS(th) 3.6<br>SSSSSE Ee<br>3.2 typ<br>Pomei<br>2.8<br>2.4<br>a 2%<br>2.0<br>aa rr<br>Se i<br>1.6 Se<br>ed<br>1.2<br>Seeeeeeeeee<br>0.8<br>FASEa ESE EES =<br>0.4 a<br>0.0 a<br>-60 -20 20 60 100 °C 160<br>T<br>j<br>**----- End of picture text -----**<br>
## **Forward characteristics of reverse diode**
_I_ F = ƒ( _V_ SD) parameter: _T_ j _, t_ p = 80 µs
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10 1<br>A FERRERS<br>I<br>F Pie EeeEEE<br>10 0<br>yf Uger<br>AP<br>10 -1<br>aaa tf<br>T j = 25 °C typ<br>T j = 150 °C typ<br>RS T j = 25 °C (98%) aon<br>ir T j = 150 °C (98%) ann<br>10 -2<br>Eh an<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0<br>V<br>SD<br>**----- End of picture text -----**<br>
7 2012 - 11 - 29
Rev 2.4
**BSP299**
**Avalanche energy** _E_ AS = ƒ( _T_ j) parameter: _I_ D = 1.2 A, _V_ DD = 50 V _R_ GS = 25 Ω, _L_ = 163 mH
**Drain-source breakdown voltage** _V_ (BR)DSS = ƒ( _T_ j)
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**----- Start of picture text -----**<br>
140 600<br>mJ PLETE TT ET TT yy TT V PT TTT ee yt et<br>120 NET ETT ET Ty 580 PT tT ee te ey yt<br>E AS 110 PNET TTT ET TTT TT V (BR)DSS570 {iit<br>560<br>100 PIN tt tt tt<br>550<br>f 90 TT ETT ET E T |<br>CAP ff EEA<br>540<br>80<br>PLING ETT ET ET ae<br>530<br>70<br>PTE ALT TET TTT ET I TEE ETAT<br>520<br>60 PTET RET TET TTT TOA<br>510<br>50 PTET INT ET TT TE TT Tle<br>500<br>40 PLT TT IN GT Ey PP LIALELEL EL<br>490<br>30 PE TTT PIN EEE FT TA<br>480<br>2010 TtPTETTT [TT] TT [TE] ING PNETET [I] 470460 TALLAti]ELLEETT TTT<br>0 450<br>PTE TT ETT ET SAD PT TPTeTPety ye t<br>20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160<br>—P T j — T j<br>**----- End of picture text -----**<br>
**Safe operating area** _**I**_ **D=f(** _**V**_ **DS) parameter :** _**D**_ **= 0.01,** _**T**_ **C=25°C**
## **Typ. gate charge**
VGS=f(Qgate); ID=0.4 A pulsed _V_ =200 V DD
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**----- Start of picture text -----**<br>
16<br>V<br>V 14<br>GS<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 nC 20<br>a Q<br>gate<br>**----- End of picture text -----**<br>
8 2012 - 11 - 29
Rev 2.4
**BSP299**
## **Package outlines**
SOT-223 Dimensions in mm
9 2012 - 11 - 29
Rev 2.4
**BSP299**
## **Published by**
## **Infineon Technologies AG**
## **81726 Munich, Germany**
**© 2009 Infineon Technologies AG All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev 2. 4
page 10 20 12 - 11 - 29
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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