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BSP297H6327XTSA1
Power MOSFET, N Channel, 200 V, 660 mA, 1.8 ohm, SOT-223, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:660mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.8W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-223
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 660mA
- Drain Source On State Resistance: 1.8ohm
- Gate Source Threshold Voltage Max: 1.4V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.393 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSP297**
_**Rev. 2.2**_
## **SIPM Small-Signal-Transistor**
**Product Summary Feature** . N-Channel _V_ DS 200 V _R_ 1.8 . Enhancement mode | DS(on) fe | . | _I_ D 0.66 [| A
## **Feature**
Logic Level
## PG-SOT223
d _v_ /d _t_ rated
- [Pb-free lead plating; RoHS compliant]
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|||||||||
|---|---|---|---|---|---|---|---|
|4|
|Qualified according to AEC Q101|
|•|Halogenfree according to IEC61249221|z=|ma|In|Ze|>|3|
|2|
|1|VPS05163|
|(GS)|Halogen-Free|fect *|ae NS|
|Type|Package|Tape and Reel Information|Marking|Packaging|
|BSP297|PG-SOT223|H|6327:|1000 pcs/reel|BSP297|Non dry|
**----- End of picture text -----**<br>
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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Pb-free|
|Yes|
|Maximum Ratings|, at|T|j = 25 °C, unless otherwise specified|
|Parameter|ee|Symbol|Value|Unit|
|Continuous drain current|I|D|A|
|T|A=25°C|0.66|
|T|A=70°C|0.53|
|Pulsed drain current|I|2.64|
|D puls|
|T|A=25°C|
|Reverse diode d|v|/d|t|d|v|/d|t|6|kV/µs|
|I|S=0.66A,|V|DS=160V, d|i|/d|t|=200A/µs,|T|jmax=150°C|
|Gate source voltage|a|V|GS|±20|V|
|ESD (JESD22-A114-HBM)|1B (>500V, <1000V)|
|ee|ee|
|Power dissipation|P|tot|1.8|W|
|T|A=25°C|
|Operating and storage temperature|T|j|,|T|stg|-55... +150|°C|
|ee|ee|
|IEC climatic category; DIN IEC 68-1|55/150/56|
|ee ee|
**----- End of picture text -----**<br>
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Page 1
**BSP297**
_**Rev. 2.2**_
|**Thermal Characteristics**||||||
|---|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>~~ee~~<br>~~ee~~||||||
|Thermal resistance, junction - soldering point|_R_thJS|-|15|25|K/W|
|(Pin 4)||||||
|SMD version, device on PCB:|_R_thJA|||||
|@ min. footprint||-|80|115||
|@ 6 cm2cooling area1)||-|48|70||
|Drain-source breakdown voltage<br>_V_GS=0,_I_D=250µA<br>|<br>||_V_(BR)DSS<br>|<br>|<br>|||200<br>tt<br>fT|-<br>tt<br>fT|-<br>tt<br>|V|
|---|---|---|---|---|---|
|Gate threshold voltage,_V_GS=_V_DS<br>_I_D=400µA<br>|<br>||_V_GS(th)<br>|<br>|<br>|||0.8<br>tt<br>fT|1.4<br>tt<br>fT||1.8<br>tt<br>|||
|Zero gate voltage drain current<br>_V_DS=200V,_V_GS=0,_T_j=25°C<br>_V_DS=200V,_V_GS=0,_T_j=150°C<br>|<br>||_I_DSS<br>| |<br>ttt<br>|<br>||-<br>-<br>fT<br>ttt<br>tt|-<br>10<br>fT<br>ttt<br>tt|0.1<br>100<br><br>ttt<br>tt|µA|
|Gate-source leakage current<br>_V_GS=20V,_V_DS=0<br>|<br>||_I_GSS<br>|<br>|<br>|<br>||-<br>tt<br>i|1<br>tt<br>||10<br>tt|nA<br>i|
|Drain-source on-state resistance<br>_V_GS=4.5V,_I_D=0.53A<br>|<br>||_R_DS(on)<br>|<br>|<br>|<br>|<br>pt|-<br>tt<br>i<br>pttf|1.2<br>tt<br>|<br>tf|3<br>tt<br>tf|i|
|Drain-source on-state resistance<br>_V_GS=10V,_I_D=0.66A<br>||_R_DS(on)<br>|<br>|<br>pt|-<br>i<br>pttf|1<br>|<br>tf|1.8<br>tf||
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
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Page 2
**BSP297**
_**Rev. 2.2**_
|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|**Electrical Characteristics**, at_T_<br>j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~TE~~|
|---|---|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics**||||||||||
|Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance|_g_fs<br>_V_DS 2*_I_D*_R_DS(on)max,<br>_I_D=0.53A<br>0.47<br>0.94<br>-<br>_C_iss<br>_V_GS=0,_V_DS=25V,<br>_f_=1MHz<br>-<br>286<br>357<br>_C_oss<br>-<br>38<br>47<br>_C_rss<br>-<br>15.7<br>23.5<br>jttt<br>=<br>ee||||||||S<br>pF|
|Turn-on delay time<br>Rise time|_t_d(on)<br>_V_DD=100V,_V_GS=4.5V,<br>_I_D=0.6A,_R_G=15<br>-<br>5.2<br>7.8<br>_t_r<br>-<br>3.8<br>5.7<br>=||||||||ns|
|Turn-off delay time<br>Fall time|_t_d(off)<br>-<br>49<br>74<br>_t_f<br>-<br>19<br>29<br>=|||||||||
|**Gate Charge Characteristics**||||||||||
|Gate to source charge|||_Q_gs||_V_DD=160V,_I_D=0.66A|-|0.7|0.9|nC|
|Gate to drain charge|||_Q_gd|||-|5.2|7.8||
|Gate charge total|||_Q_g||_V_DD=160V,_I_D=0.66A,|-|12.9|16.1||
||||||_V_GS=0 to 10V|||||
|Gate plateau voltage|||_V_(plateau)||_V_DD=160V,_I_D= 0.66 A|-|2.7|3.3|V|
|**Reverse Diode**||||||||||
|Inverse diode continuous|||_I_S||_T_A=25°C|-|-|0.66|A|
|forward current||||||||||
|Inv. diode direct current, pulsed|||_I_SM|||-|-|2.64||
|Inverse diode forward voltage|||_V_SD||_V_GS=0,_I_F=_I_S|-|0.84|1.2|V|
|Reverse recovery time|||_t_rr||_V_R=100V,_I_F=_l_S,|-|52|78|ns|
|Reverse recovery charge|||_Q_rr||d_i_F/d_t_=100A/µs|-|80|120|nC|
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Page 3
**BSP297**
_**Rev. 2.2**_
## **1 Power dissipation**
_P_ tot = _f_ ( _T_ A)
## **2 Drain current**
## _I_ D = _f_ ( _T_ A)
parameter: _V_ GS > 10 V
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BSP297 BSP297<br>W1.9 TTTT TELLIT 0.75A<br>SERA APA ae<br>1.6 FOCREEEE EEE FL<br>1.4 PEEERXEELEEPEEPINFCEC EN EEEEEEELL 0.550.6 PLEPETFOOTE TENCE NEEL EEEEET<br>0.5<br>1.2<br>CCPC PPR POPE NE<br>0.45<br>PEELE IN EEE ~<<br>1 FEEEEESERREAINENSEEE 0.350.4 PLETEPLT EEETEENLINEEEE<br>0.8<br>Pte} t tt At 0.3 PPE<br>Pe CEEEEN feeEEE INE<br>0.6 SeenPEEP EEE NEE 0.250.2 PL TT ET<br>PCE TEEN<br>0.4 0.15<br>Pitt EENT tt tN 0.1 P TETETE TE ELATEEELTAAT<br>0.2<br>FEREEEECEECEENCH [CECE<br>0 FEE FECEEEEET EEEENN eee 0.050 PLT EEL EEEELLE<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>TA TA<br>tot<br>P I D<br>**----- End of picture text -----**<br>
## **3 Safe operating area**
_I_ D = _f_ ( _V_ DS )
parameter : _D_ = 0 , _T_ A = 25 °C
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10 1 BSP297<br>A<br>t p = 100.0µs<br>||<br>ASIN<br>Tt 1 |<br>10 0<br> 1 ms<br>P N 10 ms<br>10 -1<br>10 -2<br>DC<br>ee er TTT<br>ee<br>10 -3 LEAN EL TEEI -EELTTTN<br>10 [0] 10 [1] 10 [2] V 10 [3]<br>—_ V DS<br>/ I D<br>DS<br>= V<br>R DS(on)<br>I D<br>**----- End of picture text -----**<br>
## **4 Transient thermal impedance**
_Z_ thJA = _f_ ( _t_ p)
parameter : _D_ = _t_ p/ _T_
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10 2 BSP297<br>K/W<br>ee<br>10 1<br>SN AN SU A<br>10 0<br>D = 0.50<br>0.20<br>0.10<br>MA AN a A SU MH<br>0.05<br>10 -1 single pulse<br>0.02<br>Ha 0.01<br>STITT<br>10 -2 aTTT TTT TTT e TTT Troi<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] 10 [2] s 10 [4]<br>t<br>——_ p<br>thJA<br>Z<br>**----- End of picture text -----**<br>
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Page 4
**BSP297**
_**Rev. 2.2**_
## **6 Typ. drain-source on resistance**
## **5 Typ. output characteristic**
_I_ D = _f_ ( _V_ DS) parameter: _T_ j = 25 °C, _V_ GS
_R_ DS(on) = _f_ ( _I_ D) parameter: _T_ j = 25 °C, _V_ GS
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1.3<br>A 3.4V<br>3.8V inn ///pa<br>4V<br>1.1 iauny/7a ne<br>4.6V<br>5V<br>1 n//an0<br>6V<br>0.9 10V YS<br>0.8 2.8V<br>0.7 —f-——-<br>0.6 2.6V<br>0.5<br>0.4<br>0.3 Yo<br>0.2<br>fee<br>fo<br>0.1<br>7 CCCEEee<br>0<br>0 0.4 0.8 1.2 1.6 V 2.2<br>V DS<br>DS(on)<br>I D R<br>**----- End of picture text -----**<br>
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4.5<br>2.6V<br>2.8V<br>3.4V<br>3.8V ft be<br>3.5 4V<br>SPEEA<br>4.6V<br>5V SSAA LCL<br>3 6V<br>10V<br>2.5 SPA AL |<br>2<br>1.51 UeSTEELE<br>0.5 EEL<br>0 LLL EEE<br>0 0.2 0.4 0.6 0.8 1 A 1.3<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## **7 Typ. transfer characteristics**
_I_ D= _f_ ( _V_ GS ); _V_ DS 2 x _I_ D x _R_ DS(on)max parameter: _T_ j = 25 °C
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1.3<br>A<br>1.1 es<br>a<br>1<br>a<br>0.9<br>0.8 es<br>a<br>0.7<br>Teer<br>0.6<br>a<br>0.5<br>Peer<br>0.4<br>0.3 |<br>0.2 | | | | TALI7t ft<br>0.1 aTTae<br>0<br>0 0.5 1 1.5 2 2.5 V 3.5<br>V GS<br>I D<br>**----- End of picture text -----**<br>
## **8 Typ. forward transconductance**
_g_ fs = f( _I_ D)
parameter: _T_ j = 25 °C
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1.4<br>S<br>1.2<br>CECE<br>1.1 SOOO<br>1 Eee<br>0.9<br>COO rT<br>HA<br>0.8 PET Tyrer<br>0.7<br>fee<br>0.6<br>eee<br>0.5<br>oT AA<br>0.4<br>CPCCCCEE<br>0.3<br>0.2 FEEPEELEPCOCCCEEeELL<br>0.1 PCCCCCEEo<br>0<br>0 0.2 0.4 0.6 0.8 1 A 1.3<br>I D<br>fs<br>g<br>**----- End of picture text -----**<br>
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Page 5
**BSP297**
_**Rev. 2.2**_
## **9 Drain-source on-state resistance**
## **10 Typ. gate threshold voltage**
_R_ DS(on) = _f_ ( _T_ j)
_V_ GS(th) = _f_ ( _T_ j)
parameter : _I_ D = 0.66 A, _V_ GS = 10 V
parameter: _V_ GS = _V_ DS; _I_ D =400µA
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BSP297<br>8.5<br>a TLLELLLLLLLL,<br>7 ECEEEEEE ELL<br>FCEEEEEL<br> Ei<br>6 FEEL<br>PEELE.<br>5<br>Ft} | ttt? tet ty ty<br>FEEL ELEL ELT<br>4 FCEEEE EL<br>a 3 rt}|ft tt tet be fy<br>FCEELL 98% RELL<br>2<br>I | | | | Ur] | Perl<br>POLE CERT<br>1 typ<br>p ee r<br>0 PEE<br>-60 -20 20 60 100 °C 180<br>— T j<br>DS(on) GS(th)<br>R V<br>**----- End of picture text -----**<br>
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2.2<br>V 7"SSR EREEREEE<br>98%<br>Pts<br>1.8<br>Ft Eff<br>Sd rc<br>1.6<br>—— ~<br>PT AL | typ. ULTRA]<br>1.4 PPTL nana<br>1.2 ~~<br>tT] TEN<br>1<br>2%<br>0.8 SRL| rT ir<br>PT TT PAT<br>0.6<br>TPL] ssc<br>0.4 KL<br>0.2 Ae<br>0 FE ELEL ELL<br>-60 -20 20 60 100 °C 160<br>— T j<br>GS(th)<br>V<br>**----- End of picture text -----**<br>
## **11 Typ. capacitances**
_C_ = _f_ ( _V_ DS)
parameter: _V_ GS=0, _f_ =1 MHz, _T_ j = 25 °C
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10 3 ———<_Qo<br>Ciss<br>pF<br>W E R<br>10 2<br>Coss<br>t —<br>eeSESS ==<br>IN Crss oS<br>10 1 yy oTeS<br>0 5 10 15 20 V 30<br>— V DS<br>C<br>**----- End of picture text -----**<br>
## **12 Forward character. of reverse diode**
_I_ F = _f_ (VSD)
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parameter: T<br>j<br>10 1 = BSP297 ==<br>A =<br>rreerr<br>10 0<br>Sea er 2eSeeaaoe<br>+ 10 -1 IYc=a off——<br>T j = 25 °C typ<br>— T j = 150 °C typ {=<br>T j = 25 °C (98%)<br>T j = 150 °C (98%)<br>10 -2 Ehir LL|<br>0 0.4 0.8 1.2 1.6 2 2.4 V 3<br>— V SD<br>I F<br>**----- End of picture text -----**<br>
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Page 6
**BSP297**
_**Rev. 2.2**_
## **13 Typ. gate charge**
## _V_ GS = _f_ ( _Q_ G); parameter: _V_ DS ,
## **14 Drain-source breakdown voltage**
_V_ (BR)DSS = _f_ ( _T_ j)
_I_ D = 0.66 A pulsed, _T_ j = 25 °C
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BSP297 BSP297<br>16 P LP 245V<br>V<br>E EE PRR<br>235<br>PELE TEE yz TTP<br>230<br>12 PLT TET ETT EE Aer TT<br>PEEPCO 225 TETtT TTT TT<br>10 220<br>FELT ye PL eeEAA<br>YA PTT]EET TPA<br>215<br>8 0.2 V DS max<br>210<br>0.5 V DS max IAAL S<br>6 0.8 V DS max WATE 205 ttt tet | TT<br>4 MALIVALET 200 PTLLATE<br>195<br>PTET TT Savane<br> VAT ET TT TTA Pe<br>190<br>2 HEE 185 Z<br>0 PEEET TEEPE ET EET EET EET 180 PLLELLI EEE<br>0 2 4 6 8 10 12 14 16 nC 20 -60 -20 20 60 100 °C 180<br>Q G T j<br>GS (BR)DSS<br>V V<br>**----- End of picture text -----**<br>
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Page 7
**BSP297**
## _**Rev. 2.2**_
20 12 - 11 - 28
Page 8
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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