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BSO615CGHUMA1
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 3.1 A, 3.1 A, 0.11 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 3.1A
- Continuous Drain Current Id P Channel: 3.1A
- Drain Source On State Resistance N Channel: 0.11ohm
- Drain Source On State Resistance P Channel: 0.3ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.343 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSO 615 C G**
Rev. 2.1
## **SIPMOS**[] **Small-Signal-Transistor**
|**Small-Signal-Transistor**|||||
|---|---|---|---|---|
|**Product Summary**||N|P||
|Drain source voltage|VDS|60|-60|V|
|Drain-Source on-state|RDS(on)|0.11|0.3|W|
|resistance|||||
|Continuous drain current|ID|3.1|-2|A|
## **Features**
|**Parameter**<br>/|**Symbol**<br>/|Value<br>|}—|Value<br>|}—|**Unit**<br>—|
|---|---|---|---|---|
|||N<br>|}|P<br>—||
|Continuous drain current<br>TA= 25 °C<br>TA= 70 °C<br>/|ID<br>/|3.1<br>2.5<br>|}|-2<br>-1.6<br> —|A<br>—|
|Pulsed drain current<br>TA= 25 °C|ID puls|12.4|-8||
|Avalanche energy, single pulse<br>ID= 3.1 A , VDD= 25 V, RGS= 25W<br>ID= -2 A , VDD= -25 V, RGS= 25W|EAS|47<br>-|-<br>70|mJ|
|Avalanche energy, periodic limited by Tjmax|EAR|0.2|0.2||
|Reverse diode dv/dt, Tjmax= 150 °C<br>IS= 3.1 A, VDS= 48 V, di/dt = 200 A/µs<br>IS= -2 A, VDS= -48 V, di/dt = -200 A/µs|dv/dt|6<br>-|-<br>6|kV/µs|
|Gate source voltage|VGS<br>~~||~~|±20<br>~~|~~|±20|V|
|Power dissipation<br>TA= 25 °C|Ptot<br>~~||~~|2<br>~~|~~|2|W|
|Operating and storage temperature|Tj ,Tstg<br>~~| |~~<br>~~a~~|-55...+150<br>~~|~~<br>~~a~~||°C<br>~~a~~|
|IEC climatic category; DIN IEC 68-1|~~a~~|55/150/56<br>~~a~~||~~a~~|
2012-04-04
Page 1
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Rev. 2.1<br>**----- End of picture text -----**<br>
## **BSO 615 C G**
|**Static Characteristics**, at Tj= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|||||
|---|---|---|---|---|---|---|
|Drain- source breakdown voltage<br>VGS= 0 V, ID= 250 µA<br>VGS= 0 V, ID= -250 µA|N<br>P|V(BR)DSS|(BR)DSS<br>60<br>-60|-<br>-|-<br>-|V|
|Gate threshold voltage, VGS= VDS<br>ID= 20 µA<br>ID= -450 µA|N<br>P|VGS(th)|1.2<br>-1|1.6<br>-1.5|2.0<br>-2.0||
|Zero gate voltage drain current<br>VDS= 60 V, VGS= 0 V, Tj= 25 °C<br>VDS= 60 V, VGS= 0 V, Tj= 125 °C<br>VDS= -60 V, VGS= 0 V, Tj= 25 °C<br>VDS= -60 V, VGS= 0 V, Tj= 125 °C|N<br>N<br>P<br>P|IDSS|-<br>-<br>-<br>-|0.1<br>10<br>-0.1<br>-10|1<br>100<br>-1<br>-100|µA|
|Gate-source leakage current<br>VGS= 20 V, VDS= 0 V<br>VGS= -20 V, VDS= 0 V|N<br>P|IGSS|-<br>-|10<br>-10|100<br>-100|nA|
|Drain-source on-state resistance<br>VGS= 4.5 V, ID= 2.7 A<br>VGS= -4.5 V, ID= -1.7 A|N<br>P|RDS(on)|-<br>-|0.1<br>0.27|0.15<br>0.45|W|
|Drain-source on-state resistance<br>VGS= 10 V, ID= 3.1 A<br>VGS= -10 V , ID= -2 A|N<br>P|RDS(on)|-<br>-|0.07<br>0.19|0.11<br>0.3||
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm[2] (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
2012-04-04
Page 2
Rev. 2.1
**BSO 615 C G**
## **Electrical Characteristics** , at Tj = 25 °C, unless otherwise specified
|**Characteristics**|||**min.**|**typ.**|**max.**||
|---|---|---|---|---|---|---|
|Transconductance<br>VDS 2*ID *RDS(on)max, ID= 2.7 A<br>VVDS 2*ID *RDS(on)max, ID= -1.7 A|N<br>P|gfs|2.25<br>1.2|5.5<br>2.4|-<br>-|S|
|Input capacitance<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>VGS= 0 V, VDS= -25 V, f = 1 MHz|N<br>P|Ciss|-<br>-|300<br>365|380<br>460|pF|
|Output capacitance<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>VGS= 0 V, VDS= -25 V, f = 1 MHz|N<br>P|Coss|-<br>-|90<br>105|120<br>135||
|Reverse transfer capacitance<br>VGS= 0 V, VDS= 25 V, f = 1 MHz<br>VGS= 0 V, VDS= -25 V, f = 1 MHz|N<br>P|Crss|-<br>-|50<br>40|65<br>50||
|Turn-on delay time<br>VDD= 30 V, VGS= 4.5 V, ID= 2.7 A, RG= 16W<br>VDD= -30 V, VGS= -4.5 V, ID= -1.7 A, RG= 13W|N<br>P|td(on)|-<br>-|16<br>24|24<br>36|ns|
|Rise time<br>VDD= 30 V, VGS= 4.5 V, ID= 2.7 A, RG= 16W<br>VDD= -30 V, VGS= -4.5 V, ID= -1.7 A, RG= 13W|N<br>P|tr|-<br>-|75<br>105|115<br>160||
|Turn-off delay time<br>VDD= 30 V, VGS= 4.5 V, ID= 2.7 A, RG= 16W<br>VDD= -30 V, VGS= -4.5 V, ID= -1.7 A, RG= 13W|N<br>P|td(off)|-<br>-|25<br>125|40<br>190||
|Fall time<br>VDD= 30 V, VGS= 4.5 V, ID= 2.7 A, RG= 16W<br>VDD= -30 V, VGS= -4.5 V, ID= -1.7 , RG= 13W|N<br>P|tf|-<br>-|18<br>90|27<br>135||
2012-04-04
Page 3
**BSO 615 C G**
|Rev. 2.1<br>**BSO 615 C G**<br>**Electrical Characteristics**, at Tj= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cinfineon|~~ee~~<br>~~ee ee~~|Rev. 2.1<br>**BSO 615 C G**<br>**Electrical Characteristics**, at Tj= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cinfineon|~~ee~~<br>~~ee ee~~|Rev. 2.1<br>**BSO 615 C G**<br>**Electrical Characteristics**, at Tj= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cinfineon|~~ee~~<br>~~ee ee~~|Rev. 2.1<br>**BSO 615 C G**<br>**Electrical Characteristics**, at Tj= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cinfineon|~~ee~~<br>~~ee ee~~|Rev. 2.1<br>**BSO 615 C G**<br>**Electrical Characteristics**, at Tj= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cinfineon|~~ee~~<br>~~ee ee~~|Rev. 2.1<br>**BSO 615 C G**<br>**Electrical Characteristics**, at Tj= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cinfineon|~~ee~~<br>~~ee ee~~|Rev. 2.1<br>**BSO 615 C G**<br>**Electrical Characteristics**, at Tj= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Characteristics**<br>Cinfineon|~~ee~~<br>~~ee ee~~|
|---|---|---|---|---|---|---|
|Gate to source charge|||Qgs|||nC|
|VDD= 48 V, ID= 3.1 A||N||-<br>0.5|0.75||
|VDD= -48 V, ID= -2 A||P||-<br>1.7|2.6||
|Gate to drain charge|||Qgd||||
|VDD= 48 V, ID= 3.1 A||N||-<br>6.3|9.5||
|VDD= -48 V, ID= -2 A||P||-<br>4.3|6.5||
|Gate charge total|||Qg||||
|VDD= 48 V, ID= 3.1 A, VGS= 0 to 10V|= 0 to 10V|N||-<br>15|22.5||
|VDD= -48 V, ID= -2 A, VGS= 0 to -10V|= 0 to -10V|P||-<br>13.5|20||
|Gate plateau voltage|||V(plateau)|||V|
|VDD= 48 V, ID= 3.1 A||N||-<br>3.1|-||
|VDD= -48 V, ID= -2 A||P||-<br>-2.8|-||
|**Reverse Diode**|||||||
|Inverse diode continuous forward current<br>TA= 25 °C||N<br>P<br>IS<br>-<br>-<br>-<br>-<br>3.1<br>-2<br>lane||||A|
|Inverse diode direct current,pulsed||N|ISM|-<br>-|12.4||
|TA= 25 °C||P||-<br>-|-8||
|Inverse diode forward voltage|||VSD|||V|
|VGS= 0 V, IF= IS||N||-<br>0.8|1.1||
|VGS= 0 V, IF= IS||P||-<br>-0.8|-1.1||
|Reverse recovery time|||trr|||ns|
|VR= 30 V, IF=lS, diF/dt = 100 A/µs|/dt = 100 A/µs|N||-<br>50|75||
|VR= -30 V, IF=lS, diF/dt = -100 A/µs||P||-<br>85|130||
|Reverse recovery charge|||Qrr|||nC|
|VR= 30 V, IF=lS, diF/dt = 100 A/µs||N||-<br>70|105||
|VR= -30 V, IF=lS, diF/dt = -100 A/µs||P||-<br>120|180||
2012-04-04
Page 4
Rev. 2.1
**BSO 615 C G**
## **Power Dissipation** (N-Ch.)
## Ptot = f (TA)
## **Power Dissipation** (P-Ch.) Ptot = f (TA)
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BSO 615 C<br>2.2<br>W<br>TTT TET<br>1.8 TIN EEE<br>PLEEN ELE EEL<br>1.6<br>1.4<br>EN<br>1.2<br>TENET<br>1.0 ATTEN EEE<br>PULLIN 0.80.6 PLEELEELTEEN<br>TTT ELLE<br>0.4<br>0.2 EEEPLEELEELEELELLNEEE ENTAA|<br>0.0<br>0 20 40 60 80 100 120 °C 160<br>TA<br>tot<br>P<br>**----- End of picture text -----**<br>
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BSO 615 C<br>2.2<br>W<br>TUTE<br>1.8 PNETT ET ET TTT<br>PLLEN ELLE EELEE<br>1.6<br>1.4<br>PLLEEN EEE<br>1.2<br>TENT<br>1.0 PELE EEALE<br>0.80.6 LETTEEET<br>PLLELEELLTEN ELL<br>0.4<br>0.20.0 EEEPELLETPEL ELLE ELELLEEAENTLEN |<br>0 20 40 60 80 100 120 °C 160<br>TA<br>tot<br>P<br>**----- End of picture text -----**<br>
## **Drain current** (N-Ch.)
## ID = f (TA)
## **Drain current** (P-Ch.)
## ID = f (TA)
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parameter: VGS 10 V parameter: VGS -10 V<br>BSO 615 C BSO 615 C<br>3.4 -2.2<br>A2.8 =n EEPSKEEEEEEEEEEH PLETEPCCECEELEELEELLLNEE -1.8A THICONE PLELL NEEL<br>-1.6<br>2.4 PCE J<br>FCCC CAINE -1.4 PLEELEEING LEELA<br>2.0<br>nNFERC EECA -1.2 PLEELEELIE NEEL\ EL<br>1.6<br>-1.0<br>fe 1.2 PEEEEEEEEEENSEC]ceecceeereeee gOf -0.8 CLEECEACRRET TENITNTT<br>-0.6<br>0.8<br>EEE | OOO<br>FERC EECA PLEELELLA<br>-0.4<br>0.4<br>SeUeeueezeezee! -0.2<br>0.0 FCCC CECE= Mmmm 0.0 OTOARRRAEROE('PLELELEEE EL EL EL<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>TA TA<br>D D<br>I I<br>**----- End of picture text -----**<br>
2012-04-04
Page 5
Rev. 2.1
**BSO 615 C G**
## **Safe operating area** (N-Ch.)
## ID = f ( VDS )
## parameter : D = 0 , TA = 25 °C
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BSO 615 C<br>10 2 F_—SS OS OS OO EH<br>A a<br>ell<br>tp = 4.7µs<br>10 1 I THO<br>= ce A tet 10 µs<br>a Ase<br>4 rlAT7 | | NDP TUIN NE E ETT<br>| | TIAN4 oT [TTR] I N 100 µs<br>10 0 PT FPN 1 ms<br>pta LLINPT NeFETT NPNNT ENN<br>pT eT<br>Po NTN 10 ms<br>a ee el<br>10 -1 UI<br>ESE | UTIING UTI<br>SS Ss NGS<br>FAHE 0aS<br>DC<br>10 -2 Co r t<br>10 [-1 ] 10 [0 ] 10 [1 ] V 10 [2 ]<br>—_ VDS<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>D<br>I<br>**----- End of picture text -----**<br>
## **Transient thermal impedance** (N-Ch.)
## ZthJC = f(tp) parameter : D = tp/T
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BSO 615 C<br>10 2 Coon)OT TT arr<br>eet aati “alll<br>K/W<br>A eee anima MRE A<br>SU A<br>BUoT 00 A<br>iq ALZ<br>A (| /<br>10 1 ant! <i<br>emniiesi enti elseeee 77 24th ul SoBe BO<br>LETH a EME 1 HWTRASHAE EEE<br>TN AT SST IST<br>a1 SO 9<br>STN Te CUS TU<br>D = 0.50<br>Sr TY TTT Il<br>0.20<br>Pig Hime Hie al N<br>10 0 CMA‘tlietMeeimISUTiN 0.10<br>illey single pulse SSO a TS 0.05 MIICon<br>ii MT at ee 0.02 St<br>ZC A SS<br>PUM<br>0.01<br>UTM ETALTTT T T AM TT T A CTTHN T TASTT Il<br>10 -1<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] s 10 [3 ]<br>—_P ~ tp<br>thJC<br>Z<br>**----- End of picture text -----**<br>
## **Safe operating area** (P-Ch.)
## ID = f ( VDS )
## parameter : D = 0 , TA = 25 °C
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BSO 615 C<br>-10 1 -— ee tp = 90.0 100 µsµs<br>vA<br>A<br>Co 7S<br> 1 ms<br>| TTT 2 S |<br>a Se<br>-10 0 CT NIMICN<br>FERNA | S<br>po NGNTT<br> 10 ms<br>-— aAHA<br>aPT aTTTTEENN| TTT<br>i.<br>-10 -1 eeSSAEEE eeOe0 EE<br>SEE<br>DC NI<br>fT TTTETT NUTT<br>-10 -2 llA l<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ]<br>—_ VDS<br>I D<br> /<br>V DS<br> =<br>DS(on)<br>R<br>D<br>I<br>**----- End of picture text -----**<br>
## **Transient thermal impedance** (P-Ch.)
## ZthJC = f(tp)
## parameter : D = tp/T
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BSO 615 C<br>10 2 —Seee ee ee ee ee ee<br>K/W<br>SSBU SU| gin<br>HT<br>CHM eA<br>10 1 Ba eti AATi! LT UV<br>ee ee ee ee<br>aSHSE |<br>eaETSCISTIUi |<br>TTLI DSRESeAATSSTIC CICAh TT<br>itil <The sy allig Se Is Sei lis ‘I<br>10 0 ae a a aa aa<br>ee SL HH<br>SSH D = 0.50<br>0.20<br>ConCCMAACMETn etTCSSC OS OSI S 5 0.10 mi<br>CLI TTT TTT PET S<br>0.05<br>10 -1 all) | single pulse YI Ill SII |<br>Ll ee 0.02<br>HHH HE<br>fi SJ<br>0.01<br>A CTEM CHCN C CCT i il l<br>10 -2<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] s 10 [3 ]<br>—_P ~ tp<br>thJC<br>Z<br>**----- End of picture text -----**<br>
2012-04-04
Page 6
Rev. 2.1
**BSO 615 C G**
## **Typ. output characteristics** (N-Ch.)
## ID = f (VDS)
## parameter: tp = 80 µs
## **Typ. output characteristics** (P-Ch.)
## ID = f (VDS)
parameter: tp = 80 µs
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BSO 615 C BSO 615 C<br>7.5 P tot = 2.00W -5.0 Ptot = 2.00W<br>A<br>A<br>g f TT VGS [V] Ps ft] VGS [V]<br>a 2.5 g f e a -2.5<br>6.0 cE b 2.7 -4.0 Ute b -2.7<br>5.5 c 3.0 c -3.0<br>5.0 saeee8 e d 3.2 -3.5 n/a d -3.2<br>e 3.5 e -3.5<br>4.5 AC f 3.7 -3.0 Vf d f -3.7<br>4.0 a g 4.0 7) g -4.0<br>-2.5<br>3.5 d c<br>SS Ane<br>3.0 -2.0<br>2.5 Poet | —<br>-1.5<br>2.0 TAREE y/ | c TT Wo HyHf | N | fT b<br>1.5 POSE -1.0 Loo<br>a<br>1.0<br>b -0.5<br>Py | | |<br>0.5 a<br>SSS ZeerPou<br>0.0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0<br>VDS VDS<br>Typ. drain-source-on-resistance (N-Ch.) Typ. drain-source-on-resistance (P-Ch.)<br>RDS(on) = f (ID) RDS(on) = f (ID)<br>parameter: VGS parameter: VGS<br>BSO 615 C BSO 615 C<br>0.36 1.0<br>CAA c A d e W LLL a EEE b c d<br>W<br>segs ereeeree 0.8 HATLULEL CAEL<br>0.28 ee eee /<br>a VLEET<br>0.7<br>0.24 rt | TAT Tt tT Et y, |<br>0.6<br>0.20<br>SP 4Eee see 0.5 J va » :<br>0.16<br>pA TLL<br>0.4<br>oe ETT<br>0.12 denne= CT Aen CERTtrey| e<br>0.3<br>f f<br>{tftp rit COPE| LL | |<br>0.08 EREPeeryreer g 0.2 —Seen g<br>0.04 VGSc [V] = d e f g 0.1 VGSa [V] = b c d e f g<br>3.0 3.2 3.5 3.7 4.0 -2.5 -2.7 -3.0 -3.2 -3.5 -3.7 -4.0<br>0.00 / ARR: 0.0 TELL<br>0.0 1.0 2.0 3.0 4.0 5.0 A 6.5 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 °C -3.4<br>ID Tj<br>D D<br>I I<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br>
2012-04-04
Page 7
Rev. 2.1
**BSO 615 C G**
**Typ. transfer characteristics** (N-Ch.) parameter: tp = 80 µs
ID = f (VGS), VDS 2 x ID x RDS(on)max
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7.0<br> A<br>TTT<br>6.0<br>te thy yy<br>5.5<br>5.0 TOE EEE<br>4.5<br>TOE E CA<br>TOE<br>4.0<br>TCO CCE C AEA EE<br>3.5<br>3.0<br>} 2.5 TOE E TPL<br>EOEPE PE<br>TOE PE<br>2.0<br>1.5 HOE E EOE EL<br>1.0<br>0.5 Seeee#eeen<br>TEEPE<br>0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS 5.0<br> V<br>D<br> I<br>**----- End of picture text -----**<br>
**Typ. transfer characteristics** (P-Ch.) parameter: tp = 80 µs
ID = f (VGS), VDS 2 x ID x RDS(on)max
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-5.0<br> A<br>PTE LEEL LL<br>-4.0 PTE [LEE] LE<br>TELE<br>-3.5 TPT<br>-3.0 EEE AL<br>-2.5<br>-2.0<br>TTP TPT<br>of TTI 77<br>-1.5-1.0 PTL LEVE LL<br>-0.5<br>OU LL<br>0.0 PL ELYELLLLA<br>0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 VGS -5.0<br> V<br>D<br> I<br>**----- End of picture text -----**<br>
## **Typ. forward transconductance** (N-Ch.)
**Typ. forward transconductance** (P-Ch.) gfs = f(ID); Tj = 25 °Cfs = f(ID); Tj = 25 °C = f(ID); Tj = 25 °CD); Tj = 25 °C); Tj = 25 °Cj = 25 °C = 25 °C parameter: gfsfs
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gfs = f(ID); Tj = 25 °C gfs = f(ID); Tj = 25 °Cfs = f(ID); Tj = 25 °C = f(ID); Tj = 25 °CD); Tj = 25 °C); Tj = 25 °Cj = 25 °C = 25 °C<br>parameter: gfs parameter: gfsfs<br>10.0 4.0<br> S FEC EEE EEE<br> S<br>8.0<br>P EE<br>3.0<br>a — ZT {|<br>7.0<br>Soa 2.5 LEAL<br>6.0<br>HEE LL<br>5.0 2.0<br>SAREE TV<br>4.0 VELLELEL<br>1.5<br>} EARREEEEE | OU EEL<br>3.0<br>fT ALLL ELE LE<br>1.0<br>2.0<br>fee}Ae eeei tt py PELE LE<br>0.5<br>1.0<br>0.0 a Pot | | f ft ft ft ft ft 0.0 PEELEL EL EEL<br>0 1 2 3 4 5 6 7 8 A 10 0.0 -1.0 -2.0 -3.0 -4.0 A -6.0<br> ID ID<br>fs fs<br> g g<br>**----- End of picture text -----**<br>
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**BSO 615 C G**
## **Drain-source on-resistance** (N-Ch.)
## RDS(on) = f (Tj)
## parameter : ID = 3.1 A , VGS = 10 V
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BSO 615 C<br>0.30<br>W<br>TTELELELELeLe<br>TTT<br>PP Py PTE’<br>0.24<br>TPP PPP<br>0.22<br>0.20 “PEELE<br>0.18<br>ppt tt EEeEeeTT TT<br>0.16<br>ttt ttt | ert |<br>0.14 98%<br>Peeeeeaeneeptt Ba<br>0.12<br>| tt pet |tt<br>0.10<br>tert typ | | eet<br>0.08 ier | bert |<br>0.06 PTE TTT<br>0.04 aT EEELLLL<br>0.02 “PEELE EeEe_e<br>0.00 “PEPE Eeeeee<br>-60 -20 20 60 100 °C 180<br>— Tj<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## **Gate threshold voltage** (N-Ch.)
## V GS(th) = f (Tj)
parameter: VGS = VDS, ID = 20 µA
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**----- Start of picture text -----**<br>
3.0<br> V<br>2.5 SER<br>2.2 Pynk Tp<br>2.0 ~ 98%<br>1.8 SK Ps<br>SERS typ<br>1.5<br>1.2 Pete SebSeEe<br>2%<br>| | AKL<br>1.00.8 TtofBeeneTRLESIN<br>0.5<br>N<br>0.2 PPE LLL LIS<br>0.0<br>-60 -20 20 60 100 °C 160<br>— Tj<br>GS(th)<br> V<br>**----- End of picture text -----**<br>
## **Drain-source on-resistance** (P-Ch.)
## RDS(on) = f (Tj)
## parameter : ID = -2 A , VGS = -10 V
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BSO 615 C<br>0.80 TTTTLLIELLLLoLL,<br>W<br>FEEEEEEEeeee<br>PT ttt t,t; | et yt<br>0.60 Pt ttt}, ttt yt<br>FEEEEeEeee ees.<br>0.50<br>EFO E EEEE EEEed<br>0.40 FEE<br>98%<br>PCOEEE> PreLPET li<br>0.30<br>fe EOP re<br>er typ Lear<br>0.20 CPTCEE PerleyTree<br>se<br>0.10<br>FPOEEEEeeeeeeeer<br>0.00 FEEELEELELELLTL<br>-60 -20 20 60 100 °C 180<br>— Tj<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
## **Gate threshold voltage** (P-Ch.)
## V GS(th) = f (Tj)
parameter: VGS = VDS, ID = -450 µA
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**----- Start of picture text -----**<br>
-3.0<br> V<br>-2.5 SRR<br>-2.2<br>98%<br>Tre<br>-2.0 EE<br>-1.8 wl | | eet~<br>typ Ty<br>-1.5<br>-1.2 Peete tp Tes<br>~L]] PATI 2%<br>-1.0-0.8 —TpsebTtTTLLyte| AR<br>-0.5<br>-0.2 eT Tt E LELE PN<br>0.0<br>-60 -20 20 60 100 °C 160<br>— Tj<br>GS(th)<br> V<br>**----- End of picture text -----**<br>
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**BSO 615 C G**
## **Typ. capacitances** (N-Ch.)
C = f(VDS)
parameter: VGS=0 V, f=1 MHz
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10 3<br>=a<br>WN<br> pF ee Ciss<br>NaS<br>10 2<br>ASS Coss<br>SE Crss<br>ee ee ee ee ee<br>Os a<br>10 1 PECs<br>0 5 10 15 20 25 VDS 35<br> V<br> C<br>**----- End of picture text -----**<br>
## **Forward characteristics of reverse diode**
IF = f (VSD), (N-Ch.)
parameter: Tj , tp = 80 µs
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BSO 615 C<br>10 1<br>A<br>Hf<br>10 0<br>A<br>A<br>1 10 -1 COICO<br>COUNT)<br>Tj = 25 °C typ<br>Tj = 150 °C typ<br>Tj = 25 °C (98%)<br>AR Tj = 150 °C (98%) coo<br>10 -2 Eth ALL<br>0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0<br>VSD<br>F<br>I<br>**----- End of picture text -----**<br>
## **Typ. capacitances** (P-Ch.)
C = f(VDS)
parameter: VGS=0 V, f=1 MHz
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10 3<br>== eee<br>{MT<br> pF LS Ciss<br>I e<br>10 2 Coss<br>\<br>S S<br>aTTTee ee ee Crss<br>10 1 SEE<br>0 -5 -10 -15 -20 -25 VDS -35<br> V<br> C<br>**----- End of picture text -----**<br>
## **Forward characteristics of reverse diode**
IF = f (VSD), (P-Ch.)
parameter: Tj , tp = 80 µs
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**----- Start of picture text -----**<br>
BSO 615 C<br>10 1<br>A<br>fo<br>10 0<br>LY<br>fp<br>10 -1 COME CCC<br>ft EOE<br>Tj = 25 °C typ<br>Tj = 150 °C typ<br>Tj = 25 °C (98%)<br>TIARS Tj = 150 °C (98%) coo<br>10 -2 th ALL<br>0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0<br>VSD<br>F<br>I<br>**----- End of picture text -----**<br>
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**BSO 615 C G**
**Avalanche Energy** EAS = f (Tj) (N-Ch.) parameter: ID = 3.1 A , VDD = 25 V RGS = 25 W
**Avalanche Energy** EAS = f (Tj) parameter: ID = -2 A , VDD = -25 V RGS = 25 W
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50 80<br> mJ Coo ee<br>; mJ ee<br>NEP aee ee ee<br>40<br>60<br>35 Aco, KEES<br>50<br>30<br>PNEEEFE,) PVN | | | ft ft<br>25 40<br>\ AEE EEE<br>20 et P| \ | fttt<br>30<br>| \ ft pp BONS<br>15 AR EE a<br>20<br>CER, SAGE<br>10<br>| N 10 Pot | KE<br>5<br>TT EENISNTELee pf}| P| | fp | TNE | UE NJ RE Tt<br>0 0<br>25 45 65 85 105 125 °C 165 25 45 65 85 105 125 °C 165<br> Tj Tj<br>AS AS<br> E E<br>**----- End of picture text -----**<br>
## **Typ. gate charge** (N-Ch.)
VGS = f (QGate)
parameter: ID = 3.1 A
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**----- Start of picture text -----**<br>
BSO 615 C<br>16 PETE TTT ETT TTT TTT<br>V PPEETPPEETSOR TTT TTT ETT E TTT TT TTTTTY ALY |<br>12<br> RRRRRRREEEY AD /ERE<br>SH<br>10 PEEETFELT EEE ETTVALE TYP<br>8 PLETE TT VAT A TT<br>6 0,2 VDS max 0,8 VDS max<br>S oa P A CE<br>4 FFEPIATYTPPPPTIAAJ YET TTT<br>2 PPEEE EET ETT TTT<br>0 PA PEPE EEEEEE PEELE TEEPE ETT TTT EEE<br>0 2 4 6 8 10 12 14 16 nC 20<br>QGate<br>GS<br>V<br>**----- End of picture text -----**<br>
## **Typ. gate charge** (P-Ch.)
VGS = f (QGate)
parameter: ID = -2 A
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**----- Start of picture text -----**<br>
BSO 615 C<br>-16 PLETE EEE<br>V PLTPFETTITTLEEETAY<br>-12<br>SITE TT ET TT TTT A AT |<br>HTT TA A |<br>-10 PEPEPPEET ETETTT TTTTYAZYLT<br>-8 FELT ATT |<br>-6 0,2 VDS max 0,8 VDS max<br>Co Ao<br>-4 PPPPTTPVA YATE/ ET<br>-2 Pyro LEE EE<br>PALETTE<br>0 VEEP TEEPE E T ETT EEETTT EE<br>0 2 4 6 8 10 12 14 16 nC 20<br>QGate<br>GS<br>V<br>**----- End of picture text -----**<br>
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Rev. 2.1
**BSO 615 C G**
## **Drain-source breakdown voltage**
## V(BR)DSS = f (Tj), (N-Ch.)
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**----- Start of picture text -----**<br>
BSO 615 C<br>V72 68 TTPEELEPEELEPEELEEELELLLeLLle.LELLELLEL LLLLLL<br>66 FEEELEEELLEPeeEL,<br>acne<br>a<br>64<br>FEE<br>62 PEE PLLELEVYLLYELLELL<br>TEE EELIA ELL<br>60 ELIAa a EEE<br>58 TTT AECL ELL<br>TTY EELEELELEELL LL<br>56 TYECELEELELELZ7LELEL [CELL] LLLL<br>54 PEEELEELLELL,<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>
## **Drain-source breakdown voltage**
V(BR)DSS = f (Tj), (P-Ch.)
**==> picture [230 x 272] intentionally omitted <==**
**----- Start of picture text -----**<br>
BSO 615 C<br>-72 -68 V FLTEELEELILOLEPEEEELELEELLPEEEELELEELLPEEEELELEELLEL,£1£1<br>-66 PEEEELELELELL£1EL<br>Preyer yA<br>aeFEEELELI/EL<br>-64<br>EE,<br>-62 FEEELELPEEELEYEELL YELLE<br>PCPELCEYEELrereEL<br>-60 PPAPPT TAT TT<br>-58 FCIYAEEELLELL<br>24EL,<br>-56 FYEELELELELLZ7LEEELEELELELLEL,<br>-54 PEELEEL,TL<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br>
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Rev. 2.1
**BSO 615 C G**
Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved.
## Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
## Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ).
## Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
2012-04-04
Page 13
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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