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BSO301SPHXUMA1
Power MOSFET, P Channel, 30 V, 12.6 A, 6300 µohm, SOIC, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-12.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0063ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.79W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOIC
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 12.6A
- Drain Source On State Resistance: 6300µohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.595 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSO301SP H** ## **OptiMOS[®] -P Power-Transistor** ## **Features** - P-Channel - Enhancement mode - Logic level - 150°C operating temperature ## **Product Summary** **==> picture [179 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |V|DS|-30|V| |R|DS(on),max|VGS= 10 V|8.0|mΩ| |VGS= 4.5 V|12.0|A| |I|D|-14.9|A| **----- End of picture text -----**<br> PG-DSO-8 - Avalanche rated - Qualified according JEDEC for target applications - Pb-free lead plating; RoHS compliant - Halogen-free according to IEC61249-2-21 **==> picture [426 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||| |---|---|---|---|---|---| |Type|Package|Marking|Leadfree|Halogen free|packing| |BSO301SP H|PG-DSO-8|301SP|Yes|Yes|dry| **----- End of picture text -----**<br> **==> picture [430 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |Maximum ratings,|at|T|j=25 °C, unless otherwise specified| |Parameter|Symbol|Conditions|Value|Unit| |Po| |≤10 secs|steady state| |TE| |=| |Continuous drain current|I|D|T|A=25 °C|[1)]|-14.9|-12.6|A| |T|A=70 °C|[1)]|-11.9|-10| |pfa| |Pulsed drain current|I|D,pulse|T|A=25 °C|[2)]|-60| |Avalanche energy, single pulse|E|AS|I|D=-14.9 A,|R|GS=25 Ω|248|mJ| |ee| |Gate source voltage|V|GS|±20|V| |a| |Power dissipation|P|tot|T|A=25 °C|[1)]|2.5|1.79|W| |eeee|ee| |Operating and storage temperature|T|j,|T|stg|-55 ... 150|°C| |a| |ESD class|JESD22-A114 HBM|1C (1kV - 2kV)| |ee|eee| |Soldering temperature|260|°C| |a| |IEC climatic category; DIN IEC 68-1|55/150/56| |aee| **----- End of picture text -----**<br> Rev. 1.32 page 1 2010-05-12 **BSO301SP H** |~~ee~~|**Parameter**<br>~~ee~~|**Symbol Conditions**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|**Unit**<br>~~ee~~| |---|---|---|---| |~~ee~~|~~ee~~|~~ee~~|~~ee~~| ||**Thermal characteristics**||| ||Thermal resistance,<br>junction - soldering point|_R_thJS<br>-<br>-<br>35|K/W| ||Thermal resistance,<br>junction - ambient|_R_thJA<br>minimal footprint,<br>_t_p≤10 s<br>-<br>-<br>110|| |||minimal footprint,<br>steady state<br>-<br>-<br>150|| |||6 cm2cooling area1),<br>_t_p≤10 s<br>-<br>-<br>50|| |||6 cm2cooling area1),<br>steady state<br>-<br>-<br>80|| ||**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified|| ||**Static characteristics**||| ||Drain-source breakdown voltage<br>Gate threshold voltage<br>Zero gate voltage drain current|_V_(BR)DSS _V_GS=0 V,_I_D=-250µA<br>-30<br>-<br>-<br>V<br>_V_GS(th)<br>_V_DS=_V_GS,<br>_I_D=-250 µA<br>-1<br>-1.5<br>-2<br>_I_DSS<br>_V_DS=-30 V,_V_GS=0 V,<br>_T_j=25 °C<br>-<br>-0.1<br>-1<br>µA<br>_V_DS=-30 V,_V_GS=0 V,<br>_T_j=125 °C<br>-<br>-10<br>-100<br>~~|~~<br>~~P|;~~<br>~~TT~~<br>~~ee~~<br>~~|~~|| ||Gate-source leakage current<br>Drain-source on-state resistance<br>Drain-source on-state resistance<br>Transconductance|_I_GSS<br>_V_GS=-20 V,_V_DS=0 V<br>-<br>-10<br>-100<br>_R_DS(on)<br>_V_GS=-4.5 V,_I_D=-12 A<br>-<br>8.8<br>12<br>_R_DS(on)<br>_V_GS=-10 V,_I_D=-14.9 A<br>-<br>6.3<br>8.0<br>_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-14.9 A<br>22<br>44<br>-<br>~~|~~<br>~~ee eee~~<br>~~P|;~~<br>~~T~~~~**T**~~<br>~~P|~~<br>~~t~~|nA<br>mΩ<br>S| 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.32 page 2 2010-05-12 |||||||**BSO301SP H**|**BSO301SP H**| |---|---|---|---|---|---|---|---| ||||||||| ||**Parameter**|**Symbol **|**Conditions**||**Values**||**Unit**| |||||**min.**|**typ.**|**max.**|| ||**Dynamic characteristics**||||||| ||Input capacitance|_C_iss||-|4430|5890|pF| ||Output capacitance|_C_oss|_V_GS=0 V,<br>_V_DS=-25 V,_f_=1 MHz|-|1180|1570|| ||Reverse transfer capacitance|_C_rss||-|970|1500|| ||Turn-on delay time|_t_d(on)||-|15|23|ns| ||Rise time|_t_r|_V_DD=-15 V,|-|22|33|| ||||_V_GS=-10 V,||||| ||Turn-off delay time|_t_d(off)|_I_D=-1 A,_R_G=6Ω|-|130|195|| ||Fall time|_t_f||-|110|165|| ||Gate Charge Characteristics3)||||||| |Gate to source charge<br>_Q_gs<br>-<br>-11<br>-15<br>nC<br>Gate charge at threshold<br>_Q_g(th)<br>-<br>-7.1<br>-9.5<br>Gate to drain charge<br>_Q_gd<br>-<br>-35<br>Switching charge<br>_Q_sw<br>-<br>-40<br>-59<br>Gate charge total<br>_Q_g<br>-<br>-102<br>-136<br>Gate plateau voltage<br>_V_plateau<br>-<br>-2.5<br>-<br>V<br>Output charge<br>_Q_oss<br>_V_DD=-15 V,_V_GS=0 V<br>-<br>-36<br>-48<br>_V_DD=-24 V,<br>_I_D=-14.9 A,<br>_V_GS=0 to -10 V<br>~~=~~|||||||| ||**Reverse Diode**||||||| |Diode continous forward current<br>_I_S<br>-<br>-<br>-2.1<br>A<br>Diode pulse current<br>_I_S,pulse<br>-<br>-<br>-60<br>Diode forward voltage<br>_V_SD<br>_V_GS=0 V,_I_F=-14.9 A,<br>_T_j=25 °C<br>-<br>-0.82<br>-1.2<br>V<br>Reverse recovery time<br>_t_rr<br>_V_R=15 V,_I_F=-14.9A,<br>d_i_F/d_t_=100 A/µs<br>-<br>32<br>40<br>ns<br>Reverse recovery charge<br>_Q_rr<br>-<br>-20<br>-25<br>nC<br>_T_A=25 °C<br>~~tt~~|||||||| ||3)See figure 16 for gate charge parameter definition<br>2)See figure 3||||||| |Rev. 1.32|Rev. 1.32||page 3||||2010-05-12| Rev. 1.32 page 3 **BSO301SP H** **1 Power dissipation** ## **2 Drain current** **==> picture [443 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> P tot=f( T A); t p≤10 s I D=f( T A); | V GS|≥10 V; t p≤10 s<br>3 16<br>2.5<br>12<br>2<br>1.5 8<br>1<br>4<br>0.5<br>0 AD 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br>3 Safe operating area 4 Max. transient thermal impedance<br>I D=f( V DS); T A=25 °C [1)] ; D =0 Z thJS=f( t p)<br>parameter: t p parameter: D = t p/ T<br>10 [2] 100 10 [2] 100<br>10 µs1 µs<br>100 µs 0.5<br>1 ms 0.2<br>10 [1] 10 10 [1] 10<br>limited by on-state<br>resistance 0.1<br>0.05<br>10 ms<br>0.02<br>10 [0] 1 10 [0] 1<br>0.01<br>10 [-1] 0.1 DC 10 [-1] 0.1<br>single pulse<br>10 [-2] 0.010.1 1 10 100 10 [-2] 0.010.00001 0.0001 0.001 0.01 0.1 1 10<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>-V DS [V] t p [s]<br> [W] [A]<br>P tot -I D<br> [A] [K/W]<br> D<br>-I<br> thJS<br>Z<br>**----- End of picture text -----**<br> Rev. 1.32 2010-05-12 page 4 **BSO301SP H** ## **5 Typ. output characteristics** ## **6 Typ. drain-source on resistance** **==> picture [438 x 612] intentionally omitted <==** **----- Start of picture text -----**<br> I D=f( V DS); T j=25 °C R DS(on)=f( I D); T j=25 °C<br>parameter: V GS parameter: V GS<br>60 25<br>-10 V -3.5 V<br>-4.5 V 2.5 2.7 3.0<br>50 -3.2 V<br>20<br>3.2<br>40<br>-3 V<br>15<br>3.5<br>30<br>10<br>20 -2.7 V 4.5<br>10<br>-2.5 V 5<br>10<br>-2.3 V<br>0 B= 0<br>0 1 2 3 0 10 20 30 40<br>-V DS [V] -I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>I D=f( V GS); | V DS|>2| I D| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>60 60<br>50<br>40 40<br>30<br>20 20<br>10 C °150 C °25<br>0 0<br>0 1 2 3 4 0 10 20 30<br>-V GS [V] -I D [A]<br>]<br>Ω<br> [m<br> [A]<br> D<br>-I<br> DS(on)<br>R<br> [A] [S]<br> D fs<br>-I g<br>**----- End of picture text -----**<br> Rev. 1.32 2010-05-12 page 5 **BSO301SP H** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=-14.9 A; _V_ GS=-10 V **==> picture [210 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>10<br>98 %<br>8<br>typ.<br>6<br>4<br>2<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>]<br>Ω<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz **==> picture [208 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10000<br>Ciss<br>Coss<br>10 [3] 1000 Crss<br>10 [2] 100<br>0 5 10 15 20 25 30<br>-V DS [V]<br> [pF]<br>C<br>**----- End of picture text -----**<br> ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-250 µA **==> picture [210 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2 max.<br>1.5 typ.<br>auace<br>min.<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br> GS(th)<br>-V<br>**----- End of picture text -----**<br> ## **12 Forward characteristics of reverse diode** _I_ F=f( _V_ SD) parameter: _T_ j **==> picture [209 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>25 °C, typ<br>150 °C, typ<br>10<br>25 °C, 98%<br>150 °C, 98%<br>1<br>0.1<br>0 0.5 1 1.5<br>-V SD [V]<br> [A]<br>I F<br>**----- End of picture text -----**<br> Rev. 1.32 page 6 2010-05-12 **BSO301SP H** **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 Ω parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=-14.9 A pulsed parameter: _V_ DD **==> picture [439 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> 100 10<br>9<br>8<br>6 15<br>7 24<br>C °25<br>6<br>10 5<br>C °100<br>4<br>C °125<br>3<br>2<br>1<br>1 0<br>1 10 100 1000 0 20 40 60 80 100 120<br>t AV [µs] -Q gate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V BR(DSS)=f( T j); I D=-250 µA<br>36<br>V GS<br>34<br>Q g<br>32<br>30<br>28<br>V gs(th)<br>26<br>24<br>22 Q g(th) Q sw Q gate<br>20 Q gs Q gd<br>-60 Zi -20 20 60 100 140 180 g<br>T j [°C]<br> [A] [V]<br> AV GS<br>-I -V<br> [V]<br> BR(DSS)<br>-V<br>**----- End of picture text -----**<br> Rev. 1.32 page 7 2010-05-12 **BSO301SP H** **==> picture [73 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Package Outline<br>**----- End of picture text -----**<br> ## **P-DSO-8: Outline** Rev. 1.32 page 8 2010-05-12 **BSO301SP H** ## **Published by** **Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.32 page 9 2010-05-12
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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