BSO080P03NS3EGXUMA1

Power MOSFET, P Channel, 30 V, 12 A, 0.0067 ohm, SOIC, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
No. of Pins: 8Pins
Channel Type: P Channel
Product Range: OptiCMOS 3
Power Dissipation: 1.6W
Transistor Mounting: Surface Mount
Transistor Polarity: P Channel
Power Dissipation Pd: 1.6W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.0067ohm
Transistor Case Style: SOIC
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 12A
Drain Source On State Resistance: 0.0067ohm
Gate Source Threshold Voltage Max: 2.5V

Delivery and price
Units per pack	1000
Price	0.313 €
Current stock	10+
Lead time	30 days

Datasheet

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|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|" .D6: A:<br>W<br>ratings, at<br>=25 °C, unless otherwise specified|||||||||||||
|AJZJVN\NZ||CaVKXU||4XWMR\RXW[||FJU]N||||||EWR\|
||||||||||||||
|Continuous drain current||$9||)=H<br>(6<br>=10V,<br>=25°C~~PT~~||),&0<br>~~PT~~||)*&(<br>~~PT~~||||6|
|||||)=H<br>(6||))&0||1&,|||||
|||||)=H<br>(6||)*&,||1&0|||||
|||||)=H<br>(6||1&1||/&0|||||
|~~Avalancheenergy,singlepulse~~||$9$]aY_R<br>~~S|~~||(6<br>~~=14.8A,~~<br>~~=25 pe~~||,0<br>~~pe~~|||||||
|~~Avalancheenergy,singlepulse~~||#6H<br>~~S|~~||$9<br>'=H<br>W<br>~~=14.8A,~~<br>~~=25 pe~~||),1<br>~~pe~~||||||Z@|
|~~Avalanche energy, single pulse~~||)=H<br>~~S| ~~||~~=14.8A,~~<br>~~=25 pe~~||q*-<br>~~pe~~||||||J|
|)#<br>~~OperatingandstoragetemperaturePo~~||%\<br>~~Po~~||(6||*&-<br>~~-55...~~||)&.<br>~~...150~~||||K|
|~~OperatingandstoragetemperaturePo~~<br>~~ESDclass~~||(W (_T<br>~~Po~~<br>~~P|~~||~~P|JESD22-A114_BM~~||~~-55...150~~<br>~~3(>=4kV)~~||||||p8|
|~~Operating and storage temperature Po~~<br>~~ESDclass~~||~~Po~~<br>~~P|~~||~~P|JESD22-A114_BM~~||~~-55 ... 150~~<br>~~3(>=4kV)~~|||||||
|~~ESD class~~||~~P|~~||~~P|JESD22-A114_ BM~~||*.(<br>~~3 (>= 4 kV)~~|||||||
|||||||--')-('-.|||||||



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|(52>:<br>al characteristics|||||||
|Thermal resistance,<br>junction - soldering point|'U@H||%|%|+-|A'K|
|Thermal resistance,<br>junction - ambient|'U@6|.]"<br>minimal footprint,<br>10s|%|%|))(||
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|W<br>Electrical characteristics, at<br>=25 °C, unless otherwise specified|||||||
|Static characteristics<br>~~Drain-sourcebreakdownvoltagepO~~<br>~~=0V,=0.25mA Pf~~|||||||
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|Dyna<br>_ic characteristics<br>~~Inputcapacitance~~<br>~~P|~~<br>~~Pf]~~|||||||
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|~~Output capacitance~~<br>Reversetransfercapacitance<br>~~Turn-ondelaytime~~|8^__<br>~~P|~~<br>~~a~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|)-(<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|**-<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~||
|~~Turn-ondelaytime~~|.Q"\[#<br>~~P|~~|)99<br>)=H<br>$9<br>'=<br>W<br>~~P|~~<br>~~P|~~ =14.8A,<br>=1.6|%<br>~~Pf]~~|).<br>~~Pf]~~|*,<br>~~Pf]~~|[_|
|~~Turn-on delay time~~<br>~~Turn-offdelaytime~~|.^<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|,/<br>~~Pf]~~<br>~~Pf]~~|/(<br>~~Pf]~~<br>~~Pf]~~||
|~~Turn-offdelaytime~~|.Q"\SS#<br>~~P|~~||%<br>~~Pf]~~|.,<br>~~Pf]~~|1.<br>~~Pf]~~||
|~~Turn-off delay time~~|.S<br>~~P|~~||%<br> ~~Pf]~~|)1<br>~~Pf]~~|*0&-<br>~~Pf]~~||
|#<br>Gate Char e Characteristics<br>~~Gatetosourcecharge~~<br>~~po~~<br>~~Pf~~|||||||
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|~~Gate to source charge~~<br>~~po~~<br>~~Gatechargeatthreshold~~<br>~~po~~<br>~~Gatetodraincharge~~|&T"U#<br>~~po~~<br>~~po~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|/<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|)(<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~||
|~~Gate charge at threshold~~<br>~~po~~<br>~~Gatetodraincharge~~<br>~~Switchingcharge~~|&TQ<br>~~po~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|0<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|))<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate to drain charge~~<br>~~Switchingcharge~~<br>~~Gatechargetotal~~|&_c<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|)0<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|*-<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Switching charge~~<br>~~Gatechargetotal~~<br>~~Gateplateauvoltage~~|&T<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|.)<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|0)<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate charge total~~<br>~~Gateplateauvoltage~~|)]YNRNa<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|+&1<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~|J|
|~~Gate plateau voltage~~|&\__<br>~~P|~~|)99<br>)=H<br>~~P|~~|%<br>~~Pf]~~|,1<br>~~Pf]~~|.-<br>~~Pf]~~||



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## Warnings 23A?<?9B Due to technical requirements, components may contain dangerous substances. For information on

Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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