Image not available
Illustrative purposes only
BSN20Q-7
Power MOSFET, N Channel, 50 V, 500 mA, 1.3 ohm, SOT-23, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type: Single MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 600mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOT-23
- Drain Source Voltage Vds: 50V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 500mA
- Drain Source On State Resistance: 1.3ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.062 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSN20** **N-CHANNEL ENHANCEMENT MODE FIELD MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---| |||| |**V(BR)DSS**|**RDS(ON)**|**ID **<br>**TA = +25°C**| |50V|1.8@ VGS= 10V|500mA| ||2.0 @VGS= 4.5V|450mA| ## **Description** ## **Features and Benefits** - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - **PPAP Capable (Note 4)** ## **Mechanical Data** - Case: SOT23 ## **Applications** - Backlighting - DC-DC Converters - Power Management Functions - Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 **e3** - Terminal Connections: See Diagram - Weight: 0.008 grams (approximate) **==> picture [162 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> SOT23 Drain<br>Gate<br>e e Source<br>Top View Equivalent Circuit<br>**----- End of picture text -----**<br> **==> picture [53 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G S<br>Top View<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 5) |**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)|**Ordering Informationg Information Information**(Note 5)| |---|---|---|---| ||||| |**Part Number**|**Qualification**|**Case**|**Packaging**| |BSN20-7|Standard|SOT23|3000/Tape & Reel| |BSN20Q-7|Automotive|SOT23|3000/Tape &Reel| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** N20 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) **N20 N20** YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) **Chengdu A/T Site Shanghai A/T Site** Date Code Key **Year 2009 2010 2011 2012 2013 2014 2015 Code** W X Y Z A B C ~~a~~ **Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec** ~~————ee~~ **Code** 1 2 3 4 5 6 7 8 9 O N D 1 of 6 **www.diodes.com** BSN20 Document number: DS31898 Rev. 8 - 2 September 2013 © Diodes Incorporated **BSN20** **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---| ||||||| |**Characteristic**|||**Symbol**|**Value**|**Units**| |Drain-Source Voltage|||VDSS|50|V| |Gate-Source Voltage|||VGSS|20|V| |Continuous Drain Current<br>@ TSP= +25°C (Note 6)|Steady<br>State|TA= +25°C<br>TA= +100°C|ID|500<br>300|mA| |Pulsed Drain Current @ TSP= +25°C(Notes 6 & 7)|||IDM|1.2|A| ## **Thermal Characteristics** |**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**|**Thermal Characteristics**| |---|---|---|---| ||||| |**Characteristic**|**Symbol**|**Value**|**Units**| |Power Dissipation, @TA= +25°C(Note 6)|PD|600|mW| |Thermal Resistance, Junction to Ambient @TA= +25°C (Note 6)|RJA|200|C/W| |Power Dissipation, @TSP= +25°C(Note 6)|PD|920|mW| |Thermal Resistance, @TSP= +25°C (Note 6)|RJSP|136|°C/W| |Operatingand Storage Temperature Range|TJ, TSTG|-55 to +150|°C| . ## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))| |---|---|---|---|---|---|---| |||||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**| |**OFF CHARACTERISTICS(Note 8)**<br>~~i~~||||||| |Drain-Source Breakdown Voltage<br>~~i~~|BVDSS<br>~~i~~|50<br>~~i~~|<br>~~i~~|<br>~~i~~|V<br>~~i~~|VGS= 0V, ID= 250µA<br>~~i~~| |Zero Gate Voltage Drain Current TJ= +25°C<br>~~ee~~|IDSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|0.5<br>~~ee~~|µA<br>~~ee~~|VDS= 50V, VGS= 0V<br>~~ee~~| |Gate-Body Leakage<br>~~ee~~|IGSS<br>~~ee~~|<br>~~ee~~|<br>~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|VGS=20V, VDS= 0V<br>~~ee~~| |**ON CHARACTERISTICS(Note 8)**||||||| |Gate Threshold Voltage<br>~~GGG~~|VGS(th)<br>~~GGG~~|0.4<br>~~GGG~~|1.0<br>~~GGG~~|1.5<br>~~GGG~~|V<br>~~CO~~|VDS= VGS, ID= 250µA<br>~~CO~~| |Static Drain-Source On-Resistance<br>~~Oe~~|RDS(ON)<br>~~Oe~~|<br>~~Oe~~|1.3<br>1.6<br>~~Oe~~|1.8<br>2.0<br>~~Oe~~|<br>~~Oe~~|VGS= 10V, ID= 0.22A<br>VGS= 4.5V, ID= 0.1A<br>~~Oe~~| |Forward Transfer Admittance<br>~~re~~<br>~~Se~~||Yfs|<br>~~re~~|40<br>~~re~~|320<br>~~re~~|<br>~~re~~|mS<br>~~re~~<br>~~e~~|VDS= 10V, ID= 0.1A<br>~~re~~<br>~~ee~~| |Diode Forward Voltage<br>~~re~~<br>~~Se~~|VSD<br>~~re~~|<br>~~re~~|1.0<br>~~re~~|1.5<br>~~re~~|V<br>~~re~~<br>~~e~~|VGS= 0V, IS= 180mA<br>~~re~~<br>~~ee~~| |Source (diode forward) Current<br>~~Se~~|IS|||194|mA<br>~~e~~|TSP= +25°C<br>~~ee~~| |Peak Source (diode forward) Current<br>~~Se~~|ISM|||1.2|A<br>~~e~~|TSP= +25°C(Notes 3 & 4)<br>~~ee~~| |**DYNAMIC CHARACTERISTICS(Note 9)**<br>~~Se~~<br>~~ee~~||||||| |Input Capacitance<br>~~Se~~<br>~~ee~~<br>~~ee~~|Ciss<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|21.8<br>~~ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~|pF<br>~~e~~<br>~~ee~~<br>~~ee~~|VDS= 10V, VGS= 0V, f = 1.0MHz<br>~~ee~~<br>~~ee~~| |Output Capacitance<br>~~ee~~|Coss<br>~~ee~~|<br>~~ee~~|5.6<br>~~ee~~|15<br>~~ee~~|pF<br>~~ee~~|| |Reverse Transfer Capacitance<br>~~ee~~|Crss<br>~~ee~~|<br>~~ee~~|3.3<br>~~ee~~|10<br>~~ee~~|pF<br>~~ee~~|| |Gate Resistance<br>~~ee~~|Rg<br>~~ee~~|<br>~~ee~~<br>~~e~~|49<br>~~ee~~<br>~~e~~|<br>~~ee~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|VDS=0V, VGS= 0V, f = 1MHz<br>~~ee~~<br>~~ee~~| |Total Gate Charge<br>~~a~~<br>~~e~~|Qg<br>~~a~~<br>~~e~~|<br>~~a~~<br>~~e~~~~**e**~~<br>~~e~~|800<br>~~a~~<br>~~**e**~~<br>~~e~~|<br>~~a~~<br>~~**e**~~<br>~~ee~~|pC<br>~~a~~<br>~~**e**~~<br>~~ee~~|VGS= 10V, VDD= 25V,<br>ID= 250mA<br>~~**e**~~<br>~~ee~~| |Gate-Source Charge<br>~~e~~|Qgs<br>~~e~~|<br>~~e~~~~**e**~~<br>~~e~~|100<br>~~**e**~~<br>~~e~~|<br>~~**e**~~<br>~~ee~~|pC<br>~~**e**~~<br>~~ee~~|| |Gate-Drain Charge<br>~~e~~|Qgd<br>~~e~~|<br>~~e~~~~**e**~~<br>~~e~~|100<br>~~**e**~~<br>~~e~~|<br>~~**e**~~<br>~~ee~~|pC<br>~~**e**~~<br>~~ee~~|| |Turn-On DelayTime<br>~~e~~<br>~~ee~~|tD(on)<br>~~e~~<br>~~ee~~|<br>~~e~~~~**e**~~<br>~~e~~<br>~~ee~~|2.93<br>~~**e**~~<br>~~e~~<br>~~ee~~|<br>~~**e**~~<br>~~ee~~<br>~~ee~~|ns<br>~~**e**~~<br>~~ee~~<br>~~ee~~|VDD= 30V, VGEN= 10V,<br>RL= 150, RGEN= 50,<br>ID= 0.2A<br>~~**e**~~<br> ~~ee~~<br>~~ee~~| |Turn-On Rise Time<br>~~ee~~|tr<br>~~ee~~|<br>~~e~~<br>~~ee~~|2.99<br>~~e~~<br>~~ee~~|<br>~~ee~~<br>~~ee~~|ns<br>~~ee ~~<br>~~ee~~|| |Turn-Off DelayTime<br>~~ee~~|tD(off)<br>~~ee~~|<br>~~ee~~|9.45<br>~~ee~~|<br>~~ee~~|ns<br>~~ee~~|| |Turn-Off Fall Time<br>~~ee~~|tf<br>~~ee~~|<br>~~ee~~|8.3<br>~~ee~~|<br>~~ee~~|ns<br>~~ee~~|| 9. Guaranteed by design. Not subject to production testing. 2 of 6 **www.diodes.com** BSN20 Document number: DS31898 Rev. 8 - 2 September 2013 © Diodes Incorporated **BSN20** **==> picture [215 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>TS, SOLDER POINT TEMPERATURE (°C)<br>Fig 1. Normalized Total Power Dissipation<br>as a Function of Solder Point Temperature<br>, POWER DISSIPATION (%)<br>D<br>P<br>**----- End of picture text -----**<br> **==> picture [210 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TS, SOLDER POINT TEMPERATURE (°C)<br>Fig 2. Normalized Continuous Current<br>vs. Solder Point Temperature<br>, NORMALIZED CONTINUOUS CURRENT (%)<br>IDER<br>**----- End of picture text -----**<br> **==> picture [438 x 439] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>R ds(on)<br>Limited<br>PW = DC<br>PW = 10s<br>0.1<br>PW = 1s<br>PW = 100ms<br>PW = 10ms<br>PW = 1ms<br>0.01 PW = 100µs<br>PW = 10µs<br>T J(MAX) = 150°C<br>T A = 25°C<br>Single Pulse<br>0.001<br>0.1 1 10 100<br>VDS, DRAIN-SOURE VOLTAGE (V)<br>Fig. 3 SOA, Safe Operation Area<br>1,000<br>100<br>D = 0.5<br>D = 0.3<br>D = 0.1<br>10<br>D = 0.05<br>D = 0.02<br>Duty Cycle, D = t1/t2<br>D = Single Pulse<br>1<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t1, PULSE DURATION TIME (s)<br>Fig. 4 Transient Thermal Response<br>, DRAIN CURRENT (A)<br>ID<br>, TRANSIENT THERMAL RESISTANCE (°C/W)<br>th(j-sp)<br>Z<br>**----- End of picture text -----**<br> 3 of 6 BSN20 Document number: DS31898 Rev. 8 - 2 September 2013 © Diodes Incorporated **www.diodes.com** **BSN20** **==> picture [481 x 652] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 0.8<br>0.6 0.7 V DS = 5V<br>0.6<br>0.5 V GS = 10V<br>VGS = 4.5V 0.5<br>0.4<br>VGS = 4.0V 0.4<br>0.3 V GS = 3.0V<br>0.3<br>0.2<br>0.2<br>0.1 0.1 150°C 25°C<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 5 Drain-Source Current vs. Drain-Source Voltage<br>Fig. 6 Transfer Characteristics<br>10 2.5<br>9<br>8 2.0<br>VGS = 10V<br>7 ID = 500mA<br>6 1.5<br>VGS = 4.5V<br>5 ID = 200mA<br>4 1.0<br>3<br>2 VGS = .5V3 VGS = 4.0V 0.5<br>1 VGS = 4.5V VGS = 10V<br>—— aA<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -50 -25 0 25 50 75 100 125 150<br>ID, DRAIN-CURRENT (A) TJ, JUNCTION TEMPERATURE (°C)<br>Fig. 7 Drain-Source On-Resistance vs. Drain-Current Fig. 8 Drain-Source On-Resistance vs. Junction Temperature<br>2.4 0.5<br>2.0<br>0.4<br>1.6<br>0.3<br>1.2 I D = 1.0mA<br>0.2<br>0.8<br>ID = 250µA<br>150°C<br>0.4 0.1 125°C 85°C<br>25°C<br>-55°C<br>0 att 0 |<br>-50 -25 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 3.5 4<br>TJ, JUNCTION TEMPERATURE (°C) VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 9 Gate Threshold Voltage vs. Junction Temperature Fig. 10 Transfer Characteristics<br>, DRAIN-SOURCE CURRENT (A) , DRAIN-SOURCE CURRENT (A)<br>ID ID<br>)<br>) <br> , DRAIN-SOURCE ON-RESISTANCE (<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>DS(ON) R<br>R<br>, GATE THRESHOLD VOLTAGE (V)<br>, DRAIN-SOURCE CURRENT (A)<br>ID<br>GS(TH)<br>V<br>**----- End of picture text -----**<br> 4 of 6 **www.diodes.com** BSN20 Document number: DS31898 Rev. 8 - 2 September 2013 © Diodes Incorporated **BSN20** ## rey nS. **==> picture [265 x 677] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8<br>0.7<br>0.6 25° C<br>0.5<br>0.4 150°C<br>0.3<br>0.2<br>0.1<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8<br>ID, DRAIN-CURRENT (A)<br>Fig. 11 Typical Transfer Characteristic<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5 150°C<br>0.4 25° C<br>0.3<br>0.2<br>0.1<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, DIODE FORWARD VOLTAGE (V)<br>Fig. 13 Source Current vs. Diode Forward Voltage<br>ge Outline Dimensions e Outline Dimensions<br>Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.<br>ee “T GAUGE PLANE<br>rtUyEy!<br>jl va Jef<br>a o l |<br>7<br>ro<br>elF Pe;<br>, FORWARD TRANSCONDUCTANCE (s)<br>fs<br>g<br>, SOURCE CURRENT (A)<br>IS<br>A ll 7°<br>H<br>GAUGEPLANE<br>0.25<br>J<br>K 1 K<br>a<br>A M<br>L L1<br>C B<br>D<br>F G<br>**----- End of picture text -----**<br> **==> picture [211 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35<br>30<br>25<br>20<br>Ciss<br>15<br>10<br>5 Coss<br>0 Crss<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 12 Capacitance vs. Drain-Source Voltage<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> ## **Package Outline Dimensions e Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. **==> picture [113 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> SOT23<br>Po<br>Dim Min Max Typ<br>A 0.37 0.51 0.40<br>B 1.20 1.40 1.30<br>44 C 2.30 2.50 2.40<br>D 0.89 1.03 0.915<br>eeee<br>F 0.45 0.60 0.535<br>G 1.78 2.05 1.83<br>ee<br>H 2.80 3.00 2.90<br>J 0.013 0.10 0.05<br>ee<br>ee K 0.890 1.00 0.975<br>ee<br>K1 0.903 1.10 1.025<br>ee L 0.45 0.61 0.55<br>L1 0.25 0.55 0.40<br>M 0.085 0.150 0.110<br>ee ee<br> 8°<br>eeES All Dimensions in mm<br>**----- End of picture text -----**<br> 5 of 6 BSN20 September 2013 © Diodes Incorporated **www.diodes.com** Document number: DS31898 Rev. 8 - 2 **BSN20** ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. |~~X~~<br>~~E~~<br>Y<br>C<br>Z~~a lth~~<br>~~rae!~~<br>~~Rah~~|**Dimensions**<br>**Z**<br>**X**<br>**Y**<br>**C**<br>**E**||**Value (in mm)**<br>2.9<br>0.8<br>0.9<br>2.0<br>1.35| |---|---|---|---| ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated ## **www.diodes.com** 6 of 6 **www.diodes.com** BSN20 Document number: DS31898 Rev. 8 - 2 September 2013 © Diodes Incorporated
Updated at June 5, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →