BSM25GD120DN2BOSA1

IGBT Module, Three Phase Full Bridge, 35 A, 3 V, 200 W, 125 °C, EconoPACK

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Ca
SVHC: No SVHC (17-Jan-2023)
No. of Pins: 17Pins
Product Range: -
IGBT Technology: -
IGBT Termination: Stud
Power Dissipation: 200W
IGBT Configuration: Three Phase Full Bridge
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 35A
Power Dissipation Pd: 200W
Transistor Case Style: EconoPACK
Operating Temperature Max: 125°C
Junction Temperature Tj Max: 125°C
Continuous Collector Current: 35A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 3V
Collector Emitter Saturation Voltage Vce(on): 3V

Delivery and price
Units per pack	10
Price	139.86 €
Current stock	10+
Lead time	30 days

Datasheet

**BSM 25 GD 120 DN2 E3224** 

## **IGBT  Power Module** 

- Power module 

- 3-phase full-bridge 

- Including fast free-wheel diodes 

- Package with insulated metal base plate 

|**Type**|||**_V_CE**|**_I_C**|**Package**|**Ordering Code**|
|---|---|---|---|---|---|---|
|BSM 25 GD 120 DN2|BSM 25 GD 120 DN2|BSM 25 GD 120 DN2|1200V|35A|ECONOPACK 2|C67076-A2505-A67|
|BSM 25 GD120DN2E3224|BSM 25 GD120DN2E3224|BSM 25 GD120DN2E3224|1200V|35A|ECONOPACK 2K|C67070-A2505-A67|



|**Maximum Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**<br>~~a~~|**Values**<br>|**Unit**<br>|
|Collector-emitter voltage|_V_CE<br>|1200<br>|V<br>~~pp~~|
|Collector-gate voltage<br>_R_GE= 20 kΩ|_V_CGR<br>~~pp~~|1200<br>~~pp~~||
|Gate-emitter voltage|_V_GE|± 20||
|DC collector current<br>_T_C= 25 °C<br>_T_C= 80 °C|_I_C<br>Pf|25<br>35<br>Pf|A<br>Pf|
|Pulsed  collector current,_t_p= 1 ms<br>_T_C= 25 °C<br>_T_C= 80 °C|_I_Cpuls|50<br>70||
|Power dissipation per IGBT<br>_T_C= 25 °C|_P_tot|200|W|
|Chip temperature|_T_j<br>a|+ 150<br>|°C<br>of|
|Storage temperature|_T_stg<br>of|-40 ... + 125<br>of||



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**BSM 25 GD 120 DN2 E3224** 

|**Parameter**<br>**Static Characteristics**<br>~~ee ~~|**Symbol**<br> ~~eee~~|**min.**<br>~~eee~~|**Values**<br>**typ.**<br>~~eee~~|**max.**<br>~~eee~~|**Unit**<br>~~eee~~|
|---|---|---|---|---|---|
|Gate threshold voltage<br>_V_GE=_V_CE, _I_C= 1 mA|_V_GE(th)|4.5|5.5|6.5|V|
|Collector-emitter saturation voltage<br>_V_GE= 15 V,_I_C= 25 A,_T_j= 25 °C<br>_V_GE= 15 V,_I_C= 25 A,_T_j= 125 °C|_V_CE(sat)|-<br>-|3.1<br>2.5|3.7<br>3||
|Zero gate voltage collector current<br>_V_CE= 1200 V,_V_GE= 0 V,_T_j= 25 °C<br>_V_CE= 1200 V,_V_GE= 0 V,_T_j= 125 °C|_I_CES|-<br>-|2<br>0.5|-<br>0.8|mA|
|Gate-emitter leakage current<br>_V_GE= 20 V,_V_CE= 0 V|_I_GES|-|-|180|nA|



## **AC Characteristics** 

|**AC Characteristics**||||||
|---|---|---|---|---|---|
|Transconductance<br>_V_CE= 20 V,_I_C= 25 A|_g_fs|10|-|-|S|
|Input capacitance<br>_V_CE= 25 V,_V_GE= 0 V,_f_= 1 MHz|_C_iss|-|1650|-|pF|
|Output capacitance<br>_V_CE= 25 V,_V_GE= 0 V,_f_= 1 MHz|_C_oss|-|250|-||
|Reverse transfer capacitance<br>_V_CE= 25 V,_V_GE= 0 V,_f_= 1 MHz|_C_rss|-|110|-||



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|Turn-on delay time<br>_V_CC= 600 V,_V_GE= 15 V,_I_C= 25 A<br>_R_Gon= 47Ω|_t_d(on)|-|75|150|ns|
|---|---|---|---|---|---|
|Rise time<br>_V_CC= 600 V,_V_GE= 15 V,_I_C= 25 A<br>_R_Gon= 47Ω|_t_r|-|65|130||
|Turn-off delay time<br>_V_CC= 600 V,_V_GE= -15 V,_I_C= 25 A<br>_R_Goff= 47Ω|_t_d(off)|-|400|600||
|Fall time<br>_V_CC= 600 V,_V_GE= -15 V,_I_C= 25 A<br>_R_Goff= 47Ω|_t_f|-|50|100||



## **Free-Wheel Diode** 

|**Free-Wheel Diode**||||||
|---|---|---|---|---|---|
|Diode forward voltage<br>_I_F= 25 A,_V_GE= 0 V,_T_j= 25 °C<br>_I_F= 25 A,_V_GE= 0 V,_T_j= 125 °C|_V_F|-<br>-|1.8<br>2.3|-<br>2.8|V|
|Reverse recovery time<br>_I_F= 25 A,_V_R= -600 V,_V_GE= 0 V<br>_d_iF/_dt_= -800 A/µs,_T_j= 125 °C|_t_rr|-|0.13|-|µs|
|Reverse recovery charge<br>_I_F= 25 A,_V_R= -600 V,_V_GE= 0 V<br>_d_iF/_dt_= -800 A/µs<br>_T_j= 25 °C<br>_T_j= 125 °C|_Q_rr|-<br>-|6<br>2.3|-<br>-|µC|



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## **Power dissipation** 

_P_ tot = ƒ( _T_ C) parameter: _T_ ≤ 150 °C j 

## **Safe operating area** 

_I_ C = ƒ( _V_ CE) parameter: _D_ = 0 _, T_ C = 25°C , _T_ j  ≤ 150 °C 

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10 2<br>C PTI Pe CE t p = 11.0µs CT<br>A<br>CHAMPS<br>I<br>C<br>CII PST CLC<br>10 1  TAINS TRUE TIT<br> 100 µs<br>t L UTINPT INCESTISTTe]LT<br>aPLT |TNE PAT PT<br> 1 ms<br>10 0  CETTE<br> 10 ms<br>LtPT TT TINCTETT NTT TT<br>Et<br>DC<br>10 -1  STULINEani MOVVAnUI<br>AIDE LEI LU<br>10  [0 ] 10  [1 ] 10  [2 ] 10  [3 ] V<br>—> V CE<br>**----- End of picture text -----**<br>


## **Collector current** 

_I_ C = ƒ( _T_ C) parameter: _V_ GE ≥ 15 V , _T_ j  ≤ 150 °C 

**Transient thermal impedance    IGBT** _Z_ th JC = ƒ( _t_ p) parameter: _D = t_ / _T_ p 

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## **Typ. output characteristics** 

_IC = f (VCE)_ 

parameter: _t_ p = 80 µs, _T_ j = 25 °C 

## **Typ. output characteristics** 

_IC = f (VCE)_ 

parameter: _t_ p = 80 µs, _T_ j = 125 °C 

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## **Typ. transfer characteristics** 

_IC = f (VGE)_ 

parameter: _t_ p = 80 µs, _V_ CE = 20 V 

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**BSM 25 GD 120 DN2 E3224** 

## **Typ. gate charge** 

_V_ GE = ƒ( _Q_ Gate) parameter: _I_ C puls = 25 A 

## **Typ. capacitances** 

## _C_ = _f_ ( _V_ CE) 

parameter: _V_ GE = 0 V, f = 1 MHz 

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## **Reverse biased safe operating area** 

> _ICpuls = f(VCE)_ , Tj = 150°C parameter: _V_ GE = 15 V 

## **Short circuit safe operating area** 

_ICsc = f(VCE) ,_ Tj = 150°C parameter: _V_ GE = ± 15 V, _t_ SC ≤ 10 µs, L < 50 nH 

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**BSM 25 GD 120 DN2 E3224** 

## **Typ. switching time** 

_I = f (IC) ,_ inductive load , Tj = 125°C 

par.: _V_ CE = 600 V, _V_ GE = ± 15 V, _R_ G = 47 Ω 

## **Typ. switching time** 

_t = f (RG) ,_ inductive load , Tj = 125°C par.: _V_ CE = 600 V, _V_ GE = ± 15 V, _I_ C = 25 A 

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## **Typ. switching losses** 

_E = f (IC) ,_ inductive load , Tj  = 125°C par.: _V_ CE = 600 V, _V_ GE = ± 15 V, _R_ G = 47 Ω 

## **Typ. switching losses** 

_E = f (RG) ,_ inductive load _,_ Tj = 125°C par.: _V_ CE = 600V, _V_ GE = ± 15 V, _I_ C = 25 A 

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**BSM 25 GD 120 DN2 E3224** 

## **Forward characteristics of fast recovery** 

## **reverse diode** _IF = f(VF)_ 

parameter: _T_ j 

## **Transient thermal impedance    Diode** 

_Z_ th JC = ƒ( _t_ p) parameter: _D = t_ p / _T_ 

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**BSM 25 GD 120 DN2 E3224** 

**Gehäusemaße / Schaltbild Package outline / Circuit diagramm** 

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## **Nutzungsbedingungen** 

Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. 

In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen. 

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Aufgrund der technischen Anforderungen könnte unser Produkt gesundheitsgefährdende Substanzen enthalten. Bei Rückfragen zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem für Sie zuständigen Vertriebsbüro in Verbindung. 

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Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben. 

Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten. 

## **Terms & Conditions of usage** 

The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 

This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. 

Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). For those that are specifically interested we may provide application notes. 

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. 

Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend 

- to perform joint Risk and Quality Assessments; 

- the conclusion of Quality Agreements; 

- to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. 

If and to the extent necessary, please forward equivalent notices to your customers. 

Changes of this product data sheet are reserved.

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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