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BSM10GD120DN2BOSA1
IGBT Module, Three Phase Full Bridge, 15 A, 3.2 V, 80 W, 125 °C, EconoPACK
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:15A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:80W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor C
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 17Pins
- Product Range: -
- IGBT Technology: -
- IGBT Termination: Press Fit
- Power Dissipation: 80W
- IGBT Configuration: Three Phase Full Bridge
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 15A
- Power Dissipation Pd: 80W
- Transistor Case Style: EconoPACK
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 3.2V
- Collector Emitter Saturation Voltage Vce(on): 3.2V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 68.1 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSM 10 GD 120 DN2** ## **IGBT Power Module** - Power module - 3-phase full-bridge - Including fast free-wheel diodes - Package with insulated metal base plate **Type** _**V**_ **CE** _**I**_ **C Package Ordering Code** BSM 10 GD 120 DN2 1200V 15A ECONOPACK 2 C67076-A2513-A67 BSM 10 GD120DN2E3224 1200V 15A ECONOPACK 2K C67070-A2513-A67 |**Maximum Ratings**|||| |---|---|---|---| |**Parameter**|**Symbol**<br>~~a~~|**Values**<br>~~a~~|**Unit**<br>~~a~~| |Collector-emitter voltage|_V_CE<br>~~a~~|1200<br>~~a~~|V<br>~~a~~<br>~~_~~<br>tT| |Collector-gate voltage<br>_R_GE= 20 kΩ|_V_CGR<br>~~_~~|1200<br>~~_~~|| |Gate-emitter voltage|_V_GE<br>~~_~~<br>tT|± 20<br>~~_~~<br>tT|| |DC collector current<br>_T_C= 25 °C<br>_T_C= 80 °C|_I_C<br>tT|10<br>15<br>tT|A<br>tT| |Pulsed collector current,_t_p= 1 ms<br>_T_C= 25 °C<br>_T_C= 80 °C|_I_Cpuls|20<br>30|| |Power dissipation per IGBT<br>_T_C= 25 °C|_P_tot|80|W| |Chiptemperature|_T_j<br>a|+ 150<br>a<br>oo|°C<br>-40 ... + 125<br>a<br>oo| |Storage temperature|j<br>_T_stg<br>a|-40 ... + 125<br>a<br>oo|| 1 2006-01-31 **BSM 10 GD 120 DN2** |j<br>**Parameter**<br>**Static Characteristics**<br>~~ee ~~|**Symbol**<br> ~~eee~~|**min.**<br>~~eee~~|**Values**<br>**typ.**<br>~~eee~~|**max.**<br>~~eee~~|**Unit**<br>~~eee~~| |---|---|---|---|---|---| |Gate threshold voltage<br>_V_GE=_V_CE,_I_C= 0.32 mA|_V_GE(th)|4.5|5.5|6.5|V| |Collector-emitter saturation voltage<br>_V_GE= 15 V,_I_C= 10 A,_T_j= 25 °C<br>_V_GE= 15 V,_I_C= 10 A,_T_j= 125 °C|_V_CE(sat)|-<br>-|3.3<br>2.7|3.9<br>3.2|| |j<br>Zero gate voltage collector current<br>_V_CE= 1200 V,_V_GE= 0 V,_T_j= 25 °C<br>_V_CE= 1200 V,_V_GE= 0 V,_T_j= 125 °C|_I_CES|-<br>-|0.8<br>0.2|-<br>0.4|mA| |j<br>Gate-emitter leakage current<br>_V_GE= 20 V,_V_CE= 0 V|_I_GES|-|-|120|nA| ## **AC Characteristics** |**AC Characteristics**|||||| |---|---|---|---|---|---| |Transconductance<br>_V_CE= 20 V,_I_C= 10 A|_g_fs|4.7|-|-|S| |Input capacitance<br>_V_CE= 25 V,_V_GE= 0 V,_f_= 1 MHz|_C_iss|-|530|-|pF| |Output capacitance<br>_V_CE= 25 V,_V_GE= 0 V,_f_= 1 MHz|_C_oss|-|80|-|| |Reverse transfer capacitance<br>_V_CE= 25 V,_V_GE= 0 V,_f_= 1 MHz|_C_rss|-|38|-|| 2 2006-01-31 **BSM 10 GD 120 DN2** |Turn-on delay time<br>_V_CC= 600 V,_V_GE= 15 V,_I_C= 10 A<br>_R_Gon= 150Ω|**j**<br>_t_d(on)|-|55|110|ns| |---|---|---|---|---|---| |Rise time<br>_V_CC= 600 V,_V_GE= 15 V,_I_C= 10 A<br>_R_Gon= 150Ω|_t_r|-|50|100|| |Turn-off delay time<br>_V_CC= 600 V,_V_GE= -15 V,_I_C= 10 A<br>_R_Goff= 150Ω|_t_d(off)|-|380|570|| |Fall time<br>_V_CC= 600 V,_V_GE= -15 V,_I_C= 10 A<br>_R_Goff= 150Ω|_t_f|-|80|120|| |**Free-Wheel Diode**|||||| |---|---|---|---|---|---| |Diode forward voltage<br>_I_F= 10 A,_V_GE= 0 V,_T_j= 25 °C<br>_I_F= 10 A,_V_GE= 0 V,_T_j= 125 °C|_V_F|-<br>-|2.6<br>2.9|-<br>3.4|V| |j<br>Reverse recovery time<br>_I_F= 10 A,_V_R= -600 V,_V_GE= 0 V<br>_d_iF/_dt_= -400 A/µs,_T_j= 125 °C|_t_rr|-|0.5|-|µs| |j<br>Reverse recovery charge<br>_I_F= 10 A,_V_R= -600 V,_V_GE= 0 V<br>_d_iF/_dt_= -400 A/µs<br>_T_j= 25 °C<br>_T_j= 125 °C|_Q_rr|-<br>-|1.2<br>0.4|-<br>-|µC| 3 2006-01-31 **BSM 10 GD 120 DN2** ## **Power dissipation** _P_ tot = ƒ( _T_ C) parameter: _T_ ≤ 150 °C j ## **Safe operating area** _I_ C = ƒ( _V_ CE) parameter: _D_ = 0 _, T_ C = 25°C , _T_ j ≤ 150 °C **==> picture [481 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2<br>90<br>W \ A P T TTTY t p = 46.0µs<br>P tot 70 TNL\ I C 10 1 A ) SS 100 µs<br>\<br>60<br>\ EHH RR et<br>\ LTPP TTT NETTIE<br>50 1 ms<br>10 0<br>TTTTTT NIT TINUN LIS UTM<br>4030 ELT NEEL EEE [otPT TTT PTTT TTT ONNE TART 10 ms T T<br>\ LR EP Nee [ye<br>10 -1<br>20 LEELELLELINELEL NTAT LT<br>DC<br>Lt TTT tT<br>\ | TT TTTP<br>10<br>0 Ne\ 10 -2 aUTNEeh el<br>LEI ETN LETT<br>0 20 40 60 80 100 120 °C 160 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] V<br>T V<br>—_r C —_r CE<br>**----- End of picture text -----**<br> ## **Collector current** _I_ C = ƒ( _T_ C) parameter: _V_ GE ≥ 15 V , _T_ j ≤ 150 °C **Transient thermal impedance IGBT** _Z_ th JC = ƒ( _t_ p) parameter: _D = t_ / _T_ p **==> picture [489 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1<br>15<br>A K/W<br>13 PIT INET EEEL TL Fe roncr<br>10 0<br>I 12 Z<br>C LTP INT TET TT thJC SEee<br>11<br>10 PLE TTT NEEL TT COR ST ST<br>10 -1<br>9<br>8<br>7 D = 0.50<br>10 -2 0.20<br>6<br>0.10<br>5<br>0.05<br>4 PCT A SA single pulse HSS<br>10 -3 0.02<br>3<br>0.01<br>2<br>1<br>0 10 -4<br>PTET TET ET ET ET TT TTI LUI ETI FETT TTT<br>0 20 40 60 80 100 120 °C 160 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] s 10 [0 ]<br>—_r T C —_r t p<br>**----- End of picture text -----**<br> 4 2006-01-31 **BSM 10 GD 120 DN2** ## **Typ. output characteristics** ## **Typ. output characteristics** _IC = f (VCE)_ _IC = f (VCE)_ parameter: _t_ p = 80 µs, _T_ j = 125 °C parameter: _t_ p = 80 µs, _T_ j = 25 °C **==> picture [482 x 604] intentionally omitted <==** **----- Start of picture text -----**<br> 20A ee 20A<br>|) ee ee<br> 17V 17V<br>16 15V 16 15V<br>I C 13V WY I C 13V ff)<br> 11V 11V<br>14 9V 14 9V<br> 7V a//A 7V samy<br>12 12<br>So a //7A<br>10 10<br>TNA a<br>8 8<br>NRT FEINS<br>ee OLN<br>6 6<br>4 PTW 4 a<br>a NT S I =n<br>2 ae 2 ae<br>0 ARS 0<br>0 1 2 3 V 5 0 1 2 3 V 5<br>V V<br>CE CE<br>Typ. transfer characteristics<br>C = f (VGE)= f (VGE)GE))<br> parameter: t p = 80 µs, = 80 µs, V CE = 20 V = 20 V<br>20 TTT<br>A TE<br>16<br>I<br>C<br>14<br>fe aesFEE<br>12 See<br>10 ae<br>8 ae<br>6 aaa<br>4 aaa<br>2<br>0 PT<br>0 2 4 6 8 10 V 14<br>V<br>GE<br>**----- End of picture text -----**<br> ## **Typ. transfer characteristics** ## _IC = f (VGE)= f (VGE)GE))_ parameter: _t_ p = 80 µs, = 80 µs, _V_ CE = 20 V = 20 V 2006-01-31 5 **BSM 10 GD 120 DN2** ## **Typ. gate charge** _V_ GE = ƒ( _Q_ Gate) parameter: _I_ C puls = 10 A ## **Typ. capacitances** ## _C_ = _f_ ( _V_ CE) parameter: _V_ GE = 0 V, f = 1 MHz **==> picture [481 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 20 Coo 10 4 oe<br>V<br>PC pF EE<br>V GE 16 FERRE EEA C a<br>14 600 V 800 V 10 3<br>fo peeGoer ff<br>12<br>Seeeeeey ee ——————— Ciss<br>10 FEECEEEE re reCECE<br>8<br>SRE EEE EEE 10 2 SSR<br>6<br> Coss<br>fe Se<br>4 ffi | | dE hE dT dT dE ET TT a<br>‘eE TT EE ye EE ee ee ee ee Crss<br>2<br>A Eee<br>0 10 1<br>PEER EEEEE EEE EEE LET<br>0 10 20 30 40 50 nC 70 0 5 10 15 20 25 30 V 40<br>Q Gate V CE<br>**----- End of picture text -----**<br> ## **Reverse biased safe operating area** > _ICpuls = f(VCE)_ , Tj = 150°C parameter: _V_ GE = 15 V ## **Short circuit safe operating area** _ICsc = f(VCE) ,_ Tj = 150°C parameter: _V_ GE = ± 15 V, _t_ SC ≤ 10 µs, L < 50 nH **==> picture [237 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>I Cpuls/ I C<br>1.5<br>1.0<br>0.5<br>0.0<br>0 200 400 600 800 1000 1200 V 1600<br>V<br>CE<br>**----- End of picture text -----**<br> **==> picture [235 x 248] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>I Csc/ I C<br>8<br>6<br>4<br>2<br>0<br>0 200 400 600 800 1000 1200 V 1600<br>V<br>CE<br>**----- End of picture text -----**<br> 6 2006-01-31 **BSM 10 GD 120 DN2** ## **Typ. switching time** _I = f (IC) ,_ inductive load , Tj = 125°C par.: _V_ CE = 600 V, _V_ GE = ± 15 V, _R_ G = 150 Ω ## **Typ. switching time** _t = f (RG) ,_ inductive load , Tj = 125°C par.: _V_ CE = 600 V, _V_ GE = ± 15 V, _I_ C = 10 A **==> picture [483 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 10 3<br>————— ——— tdoff<br>Rees ee ee ee eeeee e eet e e<br> t tdoff t<br>ns ns<br>| | tf | | TTA[v7 | [| | ft<br>10 2 tr 10 2<br>E N E tdon<br> tr<br>N N<br> tdon<br>esRNee e eee4 eee<br> tf Of tf<br>10 1 10 1<br>0 5 10 15 A 25 0 50 100 150 200 250 Ω 350<br>I R<br>C G<br>**----- End of picture text -----**<br> ## **Typ. switching losses** _E = f (IC) ,_ inductive load , Tj = 125°C par.: _V_ CE = 600 V, _V_ GE = ± 15 V, _R_ G = 150 Ω ## **Typ. switching losses** _E = f (RG) ,_ inductive load _,_ Tj = 125°C par.: _V_ CE = 600V, _V_ GE = ± 15 V, _I_ C = 10 A **==> picture [229 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>mWs<br> Eon<br> E<br>5<br>4<br>3<br>2<br> Eoff<br>1<br>0<br>0 5 10 15 A 25<br>I<br>C<br>**----- End of picture text -----**<br> **==> picture [228 x 258] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>mWs<br> E<br>5<br>4<br>3<br> Eon<br>2<br>1<br> Eoff<br>0 foo<br>0 50 100 150 200 250 Ω 350<br>R<br>G<br>**----- End of picture text -----**<br> 2006-01-31 7 **BSM 10 GD 120 DN2** ## **Forward characteristics of fast recovery** ## **reverse diode** _IF = f(VF)_ ## parameter: _T_ j ## **Transient thermal impedance Diode** _Z_ th JC = ƒ( _t_ p) parameter: _D = t_ p / _T_ **==> picture [491 x 264] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1<br>20<br>TT TTTTT)<br>A K/W TTaHTT TTTr)a e l<br>I F 16 / Z thJC 10 0 UIT UE TaAT<br>ESREge<br>14 ee / | peEECSetATT PETITttETT<br>12<br>10 fF [T] j=125°C T j=25°C 10 -1 SateeSTUTTE a aa LH AH<br>eeeS2 A ee ee D = 0.50 LTHHHIT<br>8 SSEH 0.20<br>/ / St 0.10 TI<br>6 | ees 0.05<br>10 -2 Al mii [|<br>4 ff [ATa aTT single pulse eseRRST 0.02 aHiITT<br>0.01<br>fT HII<br>ff FT Tt oT TT TET TTT |<br>2<br>0 OA4 10 -3 LETTELAVINFT E I UTE I ETT L EIALE “iilE U<br>0.0 0.5 1.0 1.5 2.0 V 3.0 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] s 10 [0 ]<br>—_P V F —P t p<br>**----- End of picture text -----**<br> 8 2006-01-31 **BSM 10 GD 120 DN2** ## **Gehäusemaße / Schaltbild Package outline / Circuit diagramm** 9 2006-01-31 ## **Nutzungsbedingungen** Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen. Sollten Sie von uns Produktinformationen benötigen, die über den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem für Sie zuständigen Vertriebsbüro in Verbindung (siehe www.eupec.com, Vertrieb&Kontakt). Für Interessenten halten wir Application Notes bereit. Aufgrund der technischen Anforderungen könnte unser Produkt gesundheitsgefährdende Substanzen enthalten. Bei Rückfragen zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem für Sie zuständigen Vertriebsbüro in Verbindung. Sollten Sie beabsichtigen, das Produkt in Anwendungen der Luftfahrt, in gesundheits- oder lebensgefährdenden oder lebenserhaltenden Anwendungsbereichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir für diese Fälle - die gemeinsame Durchführung eines Risiko- und Qualitätsassessments; - den Abschluss von speziellen Qualitätssicherungsvereinbarungen; - die gemeinsame Einführung von Maßnahmen zu einer laufenden Produktbeobachtung dringend empfehlen und gegebenenfalls die Belieferung von der Umsetzung solcher Maßnahmen abhängig machen. Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben. Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten. ## **Terms & Conditions of usage** The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Risk and Quality Assessments; - the conclusion of Quality Agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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