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BSL308CH6327XTSA1 — Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm
Illustrative purposes only
Manufacturer logotype: INFINEON
This product is RoHS compliant

BSL308CH6327XTSA1

Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm

  • Manufacturer: INFINEON
  • Product type: Dual MOSFETs
  • Transistor Polarity:N and P Complement; Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 6Pins
  • Channel Type: Complementary N and P Channel
  • Product Range: -
  • Qualification: AEC-Q101
  • Transistor Case Style: TSOP
  • Operating Temperature Max: 150°C
  • Power Dissipation N Channel: 500mW
  • Power Dissipation P Channel: 500mW
  • Drain Source Voltage Vds N Channel: 30V
  • Drain Source Voltage Vds P Channel: 30V
  • Continuous Drain Current Id N Channel: 2.3A
  • Continuous Drain Current Id P Channel: 2.3A
  • Drain Source On State Resistance N Channel: 0.044ohm
  • Drain Source On State Resistance P Channel: 0.044ohm
Delivery and price
Units per pack 1500
Price 0.201 €
Current stock 1000+
Lead time 30 days

Updated at June 9, 2026

INFINEON logo

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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