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BSL307SPH6327XTSA1
Power MOSFET, P Channel, 30 V, 5.5 A, 0.031 ohm, TSOP, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-5.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: P Channel
- Product Range: OptiMOS P
- Qualification: AEC-Q101
- Power Dissipation: 2W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSOP
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 5.5A
- Drain Source On State Resistance: 0.031ohm
- Gate Source Threshold Voltage Max: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.205 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSL307SP** _**Rev 2.0**_ ## **OptiMOS[] -P Small-Signal-Transistor** ## **Feature** - P-Channel - Enhancement mode - Logic Level - 150°C operating temperature ## **Product Summary** **==> picture [122 x 52] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |V|DS|-30|V| |R|43|mΩ| |DS(on)| |I|D|-5.5|A| **----- End of picture text -----**<br> ## PG-TSOP-6-1 - Avalanche rated - d _v_ /d _t_ rated **==> picture [81 x 24] intentionally omitted <==** **----- Start of picture text -----**<br> 4 3<br>5 2<br>6 1<br>**----- End of picture text -----**<br> - Qualified according to AEC Q101 - Halogen free according to IEC61249221 Halogen free according to IEC61249221 **==> picture [489 x 73] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Halogen free according to IEC61249221 Halogen free according to IEC61249221|A—ZL™—|RoHS,”| |Drain| |Kage * e/@ Halogen-Free|pin 1,2,| |Gate|5,6| |Type|Package|Tape and reel|Marking|pin 3| |Source| |BSL307SP|PG-TSOP-6-1|H6327: 3000pcs/r.|sPC|pin 4| **----- End of picture text -----**<br> ## **Maximum Ratings** ,at _T_ j = 25 °C, unless otherwise specified **==> picture [485 x 323] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Parameter|Symbol|Value|Unit| |Continuous drain current|I|D|A| |T|A=25°C|-5.5| |T|A=70°C|-4.4| |Pulsed drain current|I|-22| |D puls| |T|A=25°C| |Avalanche energy, single pulse|E|AS|44|mJ| |I|D=-5.5 A ,|V|DD=-25V,|R|GS=25Ω| |Reverse diode d|v|/d|t|d|v|/d|t|-6|kV/µs| |I|S=-5.5A,|V|DS=24V, d|i|/d|t|=200A/µs,|T|jmax=150°C| |Gate source voltage|V|GS|±20|V| |Power dissipation|P|tot|2|W| |T|A=25°C| |Operating and storage temperature|T|j ,|T|stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|55/150/56| |ESD Class| |Class 1a| |JESD22-A114-HBM| **----- End of picture text -----**<br> 2014-01-09 Page 1 **BSL307SP** _**Rev 2.0**_ **Thermal Characteristics** |**Thermal Characteristics**|||||| |---|---|---|---|---|---| |**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>|**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|||| |Thermal resistance, junction - soldering point|_R_thJS|-|-|50|K/W| |SMD version, device on PCB:|_R_thJA||||| |@ min. footprint||-|-|230|| |@ 6 cm2cooling area1)||-|-|62.5|| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>||_V_(BR)DSS<br>|||-30<br>ft<br>||-<br>ft~~|~~<br>|||-<br>~~|~~<br>||V| |---|---|---|---|---|---| |Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-40µA<br>||_V_GS(th)<br>| |<br>pf|-1<br>ft<br>pf<br>||-1.5<br>ft<br>pf<br>|||-2<br><br>pf<br>||| |Zero gate voltage drain current<br>_V_DS=-30V,_V_GS=0,_T_j=25°C<br>_V_DS=-30V,_V_GS=0,_T_j=150°C|_I_DSS<br>tty|-<br>-<br>|<br>tty<br>ft|-0.1<br>-10<br>||<br>tty<br>ft|-1<br>-100<br>|<br>tty|µA| |Gate-source leakage current<br>_V_GS=-20V,_V_DS=0|_I_GSS<br>pot|-<br>pot<br>ft<br>||-10<br>pot<br>ft<br>|||-100<br>pot<br>||nA| |Drain-source on-state resistance<br>_V_GS=-4.5V,_I_D=-4.2A|_R_DS(on)<br>pf|-<br>ft<br>pf<br>||52<br>ft<br>pf<br>|||74<br>pf<br>||mΩ| |Drain-source on-state resistance<br>_V_GS=-10V,_I_D=-5.5A|_R_DS(on)<br>P||-<br>|<br>P||31<br>||<br>P||43<br>|<br>P||| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. 2014-01-09 Page 2 > _**Rev 2.0**_ **BSL307SP** |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~| |---|---|---|---|---|---|---| |**Dynamic Characteristics**||||||| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-4.4A<br>4.7<br>9.4<br>-<br>_C_iss<br>_V_GS=0,_V_DS=-25V,<br>_f_=1MHz<br>-<br>805<br>-<br>_C_oss<br>-<br>234<br>-<br>_C_rss<br>-<br>195<br>-<br>_t_d(on)<br>_V_DD=-15V,_V_GS=-10V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>7.3<br>11<br>_t_r<br>-<br>8.4<br>12.6<br>_t_d(off)<br>-<br>36.4<br>55<br>_t_f<br>-<br>29<br>44<br>~~ee~~<br>=—_===<br>===|||||S<br>pF<br>ns| |**Gate Charge Characteristics**||||||| |Gate to source charge|_Q_gs|_V_DD=-24V,_I_D=-5.5A|-|-2|-2.5|nC| |Gate to drain charge|_Q_gd||-|-8.2|-12.3|| |Gate charge total|_Qg_|_V_DD=-24V,_I_D=-5.5A,|-|-23.4|-29|| |||_V_GS=0 to -10V||||| |Gate plateau voltage|_V_(plateau)<br>_V_DD=-24V,_I_D=-5.5A||-|-2.8|-|V| |**Reverse Diode**||||||| |Inverse diode continuous|_I_S|_T_A=25°C|-|-|-5.5|A| |forward current||||||| |Inverse diode direct current,|_I_SM||-|-|-22|| |pulsed||||||| |Inverse diode forward voltage|_V_SD|_V_GS=0, |_IF_| = |_ID_||-|-0.88|-1.3|V| |Reverse recovery time|_t_rr|_V_R=-15V, |_I_F| =|_l_D|,|-|16.6|21|ns| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100A/µs|-|6.2|7.8|nC| 2014-01-09 Page 3 **BSL307SP** ## _**Rev 2.0**_ ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: | _V_ GS|≥ 10 V **==> picture [480 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSL307SP BSL307SP<br>2.2 -6<br>W A<br>TE St<br>1.8 PLEAAELEL EL EL ELE -5 LEN<br>PCCEN EEE -4.5 EEN<br>1.6<br>\ “POPPIN EE<br>-4<br>1.4<br>ENT PCEEEEEE NSCLEELE<br>-3.5<br>PLELELN ELLE \<br>1.2<br>-3<br>COON HEHE NH<br>1<br>\ PELE LLLELEN<br>-2.5<br>ALENT NN EL<br>0.8<br>-2<br>ETN PLETE LLLELEL LIAL<br>0.6<br>-1.5<br>ALE EL ELE EINE EE CCEA TN<br>0.4 \ PEEELE<br>-1<br>PLEL EL EL ELELA EEL LLL<br>0.2 -0.5<br>CECE FREESE<br>0 0<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>T A T A<br>tot<br>P I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C **==> picture [235 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> -10 2 BSL307SP<br>A<br>I -ttt eet ot t p = 90.0µs th<br>cr ER E, 100 µs if<br>-10 1<br> 1 ms<br>a<br>-10 0 IN S| 10 ms<br>pt N L<br>ror EN EC<br>0<br>-10 -1 +} 4} —_}—_ + ra<br>FN<br>DC<br>SS ee eet<br>-10 -2 a lll<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ]<br>——_ » V DS<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>D<br>I<br>**----- End of picture text -----**<br> ## **4 Transient thermal impedance** _Z_ thJS = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [232 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 2 BSL307SP<br>K/W<br>Corn<br>10 1 0 AaC TC<br>10 0<br>ee<br>-1<br>10 ST Viga<br>INESSSUIN TUTTIT TET<br>D = 0.50<br>SYTHE LTE | FIER PEE SAHA 0.20 HI<br>10 -2 UI VAIN NTT 0.10 lf<br>0.05<br>LT Ze No Ch<br>Hf} 0.02 ULI<br>10 -3 UA AIMTN 0.01 Sl<br>single pulse<br>10 -4 aLUTTE UTNM ELTON aELVIN aPETITEa ETI ETI<br>10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>t<br>— p<br>thJS<br>Z<br>**----- End of picture text -----**<br> 2014-01-09 Page 4 **BSL307SP** _**Rev 2.0**_ ## **5 Typ. output characteristic** ## **6 Typ. drain-source on resistance** _I_ D = _f_ ( _V_ DS); _T_ j=25°C parameter: _t_ p = 80 µs _R_ DS(on) = _f_ ( _I_ D) parameter: _V_ GS **==> picture [479 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> 50 0.1<br>Vgs = -5.5V<br>Vgs = -6V Ω Vgs == -3.5V3.5V Vgs == -4.5V4.5V<br>Vgs = -5V<br>A Vgs = -4V<br>0.08<br>Vgs = -7V<br>Vgs = -8V<br>Vgs = -10V 0.07<br>30 Vgs = -4.5V 0.06<br>0.05<br>20 0.04<br>Vgs = -4V<br>0.03<br>Vgs= - 3V<br>fet | Seat<br>10 0.02 Vgs = - 3.5V<br>Vgs = -3.5V<br>Vgs = - 4.5V<br>0.01 Vgs= - 6V- 6V 6V<br>Vgs = - 10V<br>po Vgs = -3V<br>0 0<br>0 1 2 3 4 5 6 7 8 V 10 0 5 10 15 20 25 30 35 40 A 50<br>- V DS - I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); | ); | V DS|≥ 2 x ||≥ 2 x |≥ 2 x | 2 x | I D| x | x R DS(on)max g fs = f( I D); T j=25°C<br>parameter: t p = 80 µs = 80 µs parameter: t p = 80 µs<br>20 15<br>S<br>A TTA Cee<br>10<br>12<br>coo Eee<br>7.5<br>8<br>CHOY, AAA<br>5<br>EE<br>4<br>| 2.5 pl<br>Coa Ae<br>0 0<br>0 1 2 3 V 5 0 5 10 A 20<br>- V GS - I D<br>I D- R DS(on)<br>I D- g fs<br>**----- End of picture text -----**<br> **==> picture [225 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1<br>Ω Vgs == -3.5V3.5V Vgs == -4.5V4.5V<br>Vgs = -4V<br>0.08<br>0.07<br>0.06<br>0.05<br>0.04<br>0.03<br>Vgs= - 3V<br>| Seat<br>0.02 Vgs = - 3.5V<br>Vgs = - 4.5V<br>0.01 Vgs= - 6V- 6V 6V<br>Vgs = - 10V<br>0<br>0 5 10 15 20 25 30 35 40 A 50<br> - I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D== _f_ ( _V_ GS ); | ); | _V_ DS|≥ 2 x ||≥ 2 x |≥ 2 x | 2 x | _I_ D| x | x _R_ DS(on)max parameter: _t_ p = 80 µs = 80 µs 2014-01-09 Page 5 **BSL307SP** _**Rev 2.0**_ ## **9 Drain-source on-resistance** _R_ DS(on) = f( _T_ j) parameter: _I_ D = -5.5 A, _V_ GS = -10 V **==> picture [227 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>mΩ<br>EEELLLLL LE<br>50<br>crc]<br>45<br>TET<br>98%<br>40 er ere<br>35 at LLL LEEa<br>30<br>typ.<br>PEE<br>25 OA TEA)<br>20 ATLELELELELL<br>-60 -20 20 60 100 °C 160<br>T<br>j<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **10 Typ. gate threshold voltage** _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS **==> picture [227 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>V<br>SERRRRREEEE<br>2<br>EERE<br>1.8<br>98%<br>1.6 RCE<br>1.4<br>CCAS<br>typ.<br>1.2 Pl TTTNET<br>1<br>0.8 2%<br>~<br>| E EE PSEE<br>0.6<br>0.4 PEEPLES<br>-60 -20 20 60 100 °C 160<br>T<br>j<br>GS(th)<br>V<br>-<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ = _f_ ( _V_ DS) parameter: _V_ GS=0, _f_ =1 MHz ## **12 Forward character. of reverse diode** _I_ F = _f_ (VSD) parameter: _T_ j , tp = 80 µs **==> picture [479 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 4 -10 2 BSL307SP<br>A<br>pF<br>ee SEPP<br>-10 1 ff e ee<br>VE tt<br>10 3 Ciss<br>| — — -10 0 RH<br>SSS Coss SS fF LY T j = 25 °C typ<br>T j = 150 °C typ<br>SSS aaa T j = 25 °C (98%) aa<br>——— Crss HS T j = 150 °C (98%) FH<br>10 2 O R -10 -1 TLE<br>0 5 10 15 20 V 30 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br> - V DS V SD<br>F<br>I<br>C<br>**----- End of picture text -----**<br> 2014-01-09 Page 6 **BSL307SP** _**Rev 2.0**_ ## **13 Typ. avalanche energy** _E_ AS = _f_ ( _T_ j), par.: _I_ D = -5.5 A _V_ DD = -25 V, _R_ GS = 25 Ω **==> picture [227 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>mJ<br>Ne ee<br>35 Abt | |<br>30 a<br>ht<br>25<br>IAL | fl<br>PE 20 TN|<br>15<br>| Af ET Tt<br>10 aw<br>5 ee<br>0<br>25 50 75 100 °C 150<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br> ## **14 Typ. gate charge** | _V_ GS| = _f_ ( _Q_ Gate) parameter: _I_ D = -5.5 A pulsed **==> picture [228 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>V<br>ptt tiiy<br>14 ey<br>12<br>0.2 VDS max. 4<br>0.5 VDS max.<br>va<br>10 0.8 VDS max.<br>1/7<br>8<br>V/jAne<br>6<br>oP LEAT0//ae<br>4 Yo<br>2 fit;<br>0 tt tf<br>0 5 10 15 20 25 nC 35<br>| Q Gate|<br>GS<br>V<br>-<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) **==> picture [227 x 264] intentionally omitted <==** **----- Start of picture text -----**<br> -36<br>V SRRReeeeeeee<br>EEE EEE<br>-34 -33 BRRReeeeeeae<br>-32<br>titted<br>-31<br>t -30 L ETE<br>-29<br>BapZGRRRnnie<br>YO EEE<br>-28 “LEE<br>-27 EE EE<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> Page 7 2014-01-09 **BSL307SP** _**Rev 2.0**_ **Package Outline:** ## **TSOP6** **==> picture [409 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 2.9 ±0.2 1.1 MAX.<br>| B | a<br>(2.25) 0.1 MAX.<br>(0.35)<br>6 5 4<br>[——]<br>1 2 3<br>0.35 +0.1-0.05 A<br>| ac 0.2 ooStid; M B 6x 0.15 [+0.1] -0.06<br>0.95<br>S 0.2 em M A<br>1.9<br>ir] e e<br>GPX09300<br>Packaging:<br>0.5<br>4 0.2<br>“e y |<br>0.95<br>ay folielLe ||<br>3.15 1.15<br>Pin 1<br>Remark: Wave soldering possible dep.<br>on customers process conditions marking<br>CPWG5899<br>˚ MAX. ˚ MAX.<br>±0.1 10 10 ±0.1<br>2.5 1.6<br>±0.1<br>0.25<br>9 9<br>1. 2.<br>8<br>2.7<br>**----- End of picture text -----**<br> ## **Footprint:** Remark: Wave soldering possible dep. on customers process conditions HLG09283 Dimensions in mm 2014-01-09 Page 8 **BSS308PE** CT **BSL307SP** _**Rev 2.0**_ ## **Published by Infineon Technologies AG** ## **81726 Munich, Germany** ## **© 2009 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2014-01-09 Page 9
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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