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BSL306NH6327XTSA1
Dual MOSFET, N Channel, 30 V, 2.3 A, 0.043 ohm, TSOP, Surface Mount
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- No. of Pins: 6Pins
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 500mW
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.043ohm
- Transistor Case Style: TSOP
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2.3A
- Power Dissipation N Channel: 500mW
- Power Dissipation P Channel: 500mW
- Gate Source Threshold Voltage Max: 1.6V
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 2.3A
- Continuous Drain Current Id P Channel: 2.3A
- Drain Source On State Resistance N Channel: 0.043ohm
- Drain Source On State Resistance P Channel: 0.043ohm
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.123 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSL306N** ## **OptiMOS™2 Small-Signal-Transistor** |**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**| |---|---|---|---| ||||| |_V_DS||30|V| |_R_DS(on),max|||| ||_V_GS=10 V|57|mW| ||||| ||_V_GS=4.5 V|93|| ||||| |_I_D||2.3|A| ## **Features** |**Features**|**Features**|**Features**|||_V_DS|_V_DS|||30|||V|| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |• Dual N-channel|||||_R_DS(on),max||||_V_GS=10 V<br>57|||mW|W| |• Enhancement mode|||||||||_V_GS=4.5 V<br>93||||| |• Logic level (4.5V rated)|||||_I_D||||2.3|||A|| |• Avalanche rated|||||||||||||| |• Qualified according to AEC Q101|||||||||PG-TSOP-6||||| |• 100% lead-free; RoHS compliant|||||||||5<br>6|||4|| |• Halogen free according to IEC61249-2-21|||• Halogen free according to IEC61249-2-21||||||||||| |Pe||S/||(Gp|Halogen-Free||||1<br>2<br>3||||| ||||||||||||||| |**Type**||**Package**||**Tape and Reel Information**<br>**Marking**|||||**Lead Free**<br>**Packing**||||| ||||||||||||||| |BSL306N||TSOP-6||H6327: 3000 pcs/ reel|H6327: 3000 pcs/ reel<br>sPN||||Yes<br>Non dry||||| |**Maximum ratings,**at_T_j=25 °C, unless otherwise specified1)|||||||||||||| |**Parameter**|||||**Symbol Conditions**||||**Value**|**Unit**|||| |Continuous drain current|||||_I_D<br>_T_A=25 °C<br>2.3<br>_T_A=70 °C<br>1.8<br>~~eee~~<br>~~ee~~|||||A|||| |Pulsed drain current|||||_I_D,pulse<br>_T_A=25 °C<br>9<br>~~a~~||||||||| |Avalanche energy, single pulse|||||_E_AS<br>_I_D=2.3 A,_R_GS=25W||||10.8|mJ|||| ||||||_I_D=2.3 A,_V_DS=16 V,||||||||| |Reverse diode d_v_/d_t_|||||d_v_/d_t_<br>d_i_/d_t_=200 A/µs,||||6|kV/µs|||| ||||||_T_j,max=150 °C||||||||| |Gate source voltage|||||_V_GS<br>±20<br>~~rr~~|||||V|||| |Power dissipation1)|||||_P_tot<br>_T_A=25 °C<br>0.5<br>~~rr~~|||||W|||| |Operating and storage temperature|||||_T_j,_T_stg<br>-55 ... 150<br>~~rr~~|||||°C|||| |ESD Class|||||JESD22-A114 -HBM<br>0 (<250V)<br>~~rr~~||||||||| |Soldering Temperature|||||260 °C<br>~~rr~~||||||||| |IEC climatic category; DIN IEC 68-1|||||55/150/56<br>~~a~~||||||||| 1) Remark: one of both transistors active Rev 2.4 page 1 2013-11-06 |||||||**BSL306N**|**BSL306N**| |---|---|---|---|---|---|---|---| |**Parameter**<br>**Symbol **<br>**Thermal characteristics**<br>~~se~~|||**Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~||||| |Thermal resistance,<br>junction - ambient<br>_R_thJA<br>minimal footprint2)<br>~~—~~<br>~~ft |~~||||-|-|250|K/W| |**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||=25 °C, unless otherwise specified||||| |**Static characteristics**|||||||| |Drain-source breakdown voltage||_V_(BR)DSS|_V_GS= 0 V,_I_D= 250 µA|30|-|-|V| |Gate threshold voltage||_V_GS(th)|_V_DS=VGS,_I_D=11 µA|1.2|1.60|2.0|| |Drain-source leakage current||_I_DSS|_V_DS=30 V,_V_GS=0 V,<br>_T_j=25 °C|-|-|1|mA| ||||_V_DS=30 V,_V_GS=0 V,<br>_T_j=150 °C|-|-|100|| |Gate-source leakage current||_I_GSS|_V_GS=20 V,_V_DS=0 V|-|-|100|nA| |Drain-source on-state resistance||_R_DS(on)|_V_GS=4.5 V,_I_D=1.85 A|-|66|93|mW| ||||_V_GS=10 V,_I_D=2.3 A|-|43|57|| |Transconductance||_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=1.8 A||5|-|S| > 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70 μ m thick and 20mm long; they are present on both sides of the PCB. Rev 2.4 page 2 2013-11-06 **BSL306N** |**BSL306N**|**BSL306N**|**BSL306N**|**BSL306N**|**BSL306N**|**BSL306N**|**BSL306N**| |---|---|---|---|---|---|---| |**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~||||||| |**Dynamic characteristics**||||||| |Input capacitance|_C_iss||-|207|275|pF| |Output capacitance|_C_oss|_V_GS=0 V,_V_DS=15 V,<br>_f_=1 MHz|-|75|100|| |Reverse transfer capacitance|Crss||-|12|17|| |Turn-on delay time|_t_d(on)||-|4.4|-|ns| |Rise time|_t_r|_V_DD=15 V,_V_GS=10 V,|-|2.3|-|| |Turn-off delay time|_t_d(off)|_I_D=2.3 A,_R_G,ext=6W|-|8.3|-|| |Fall time|_t_f||-|1.4|-|| |Gate Charge Characteristics||||||| |Gate to source charge|_Q_gs||-|0.65|-|nC| |Gate to drain charge|_Q_gd|_V_DD=15 V,_I_D=2.3 A,|-|0.45|-|| |Gate charge total|_Q_g|_V_GS=0 to 5 V|-|1.6|-|| |Gate plateau voltage|_V_plateau||-|3.1|-|V| |**Reverse Diode**||||||| |Diode continous forward current|_I_S||-|-|0.5|A| |||_T_A=25 °C||||| |Diode pulse current|_I_S,pulse||-|-|9|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=2.3 A,<br>_T_j=25 °C|-|0.83|1.1|V| |Reverse recovery time|_t_rr|_V_R=10 V,_I_F=2.3 A,|-|14.4|-|ns| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|2.9|-|nC| Rev 2.4 page 3 2013-11-06 **BSL306N** ## **1 Power dissipation** _P_ tot=f( _T_ A) ## **2 Drain current** _I_ D=f( _T_ A); _V_ GS≥10 V **==> picture [468 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>0.5<br>2<br>0.375<br>1.5<br>0.25<br>1<br>0.125<br>0.5<br>0 0<br>0 40 80 120 0 20 40 60 80 100 120 140 160<br>T A [°C] T A [°C]<br> [W]<br> [A]<br>P tot I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS); _T_ A=25 °C; _D_ =0 parameter: _t_ p ## **4 Max. transient thermal impedance** _Z_ thJA=f( _t_ p) parameter: _D_ = _t_ p/ _T_ **==> picture [466 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1 ] 10 [3 ]<br>1 ms 100 µs 10 µs 1 µs<br>10 ms<br>10 [0 ]<br>0.5<br>10 [2 ]<br>0.2<br>DC<br>0.1<br>10 [-1 ]<br>0.05<br>10 [1 ] 0.02<br>0.01<br>10 [-2 ] single pulse<br>10 [0 ]<br>10 [-3 ]<br>10 [-4 ] 10 [-1 ]<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ]<br>V DS [V] t p [s]<br> [A] [K/W]<br>I D<br>thJA<br>Z<br>**----- End of picture text -----**<br> Rev 2.4 page 4 2013-11-06 **BSL306N** ## **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [464 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 6 200<br>4.5 V<br>3.5 V<br>10 V 3.3 V<br>4 V 160<br>3.5 V<br>4<br>120<br>3.3 V<br>80 4 V<br>4.5 V<br>2<br>5 V<br>3 V<br>40 10 V<br>2.8 V<br>0 0<br>0 1 2 3 0 2 4 6 8<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V GS); |); | V DS|>2||>2| I D|| R DS(on)max g fs=f( I D); T j=25 °C<br>10 10<br>8 8<br>6 6<br>25 °C<br>4 4<br>150 °C<br>2 2<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8<br>V GS [V] I D [A]<br>]<br>W<br> [A] [m<br>I D<br>DS(on)<br>R<br>[A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max Rev 2.4 2013-11-06 page 5 **BSL306N** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=2.3 A; _V_ GS=10 V **==> picture [210 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>80<br>98 %<br>60<br>typ<br>40<br>20<br>0<br>-60 -20 20 60 100 140<br>T j [°C]<br>]<br>W<br>[m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz; Tj=25°C ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ DS=VGS; _I_ D=11 µA parameter: _I_ D **==> picture [213 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8<br>2.4<br>2<br>98 %<br>1.6<br>typ<br>1.2<br>2 %<br>0.8<br>0.4<br>0<br>-60 -20 20 60 100 140<br>T j [°C]<br> [V]<br>GS(th)<br>V<br>**----- End of picture text -----**<br> ## **12 Forward characteristics of reverse diode** _I_ F=f( _V_ SD) parameter: _T_ j **==> picture [227 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3 ]<br>Ciss<br>n e<br>10 [2 ] Coss<br>Crss<br>10 [1 ]<br>0 5 10 15 20<br>V DS [V]<br> [pF]<br>C<br>**----- End of picture text -----**<br> **==> picture [202 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1 ]<br>10 [0 ]<br>25 °C<br>10 [-1 ]<br>150 °C 150 °C, 98%<br>10 [-2 ]<br>25 °C, 98%<br>10 [-3 ]<br>0 0.4 0.8 1.2<br>V SD [V]<br> [A]<br>I F<br>**----- End of picture text -----**<br> Rev 2.4 page 6 2013-11-06 **BSL306N** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 W parameter: _T_ j(start) **==> picture [228 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1 ]<br>25 °C<br>100 °C<br>125 °C<br>10 [0 ]<br>\ i |<br>10 [-1 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ]<br>t AV [µs]<br>15 Drain-source breakdown voltage<br> BR(DSS)=f(=f( T j); ); I D=250 µA=250 µA<br>36<br>35<br>34<br>33<br>32<br>31<br>30<br>29<br>28<br>27<br>26<br>25<br>-60 -20 20 60 100 140<br>T j [°C]<br> [A]<br>I AV<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=250 µA=250 µA ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=2.3 A pulsed parameter: _V_ DD **==> picture [223 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>15 V<br>5<br>6 V<br>24 V<br>4<br>3<br>/<br>2<br>1<br>0<br>0 1 2<br>Q gate [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br> ## **16 Gate charge waveforms** **==> picture [206 x 227] intentionally omitted <==** **----- Start of picture text -----**<br> V GS<br>Q g<br>V gs(th)<br>Q g(th) Q sw Q gate<br>Q gs Q gd<br>**----- End of picture text -----**<br> Rev 2.4 2013-11-06 page 7 **BSL306N** ## **TSOP-6** ## **Package Outline:** ## **Footprint:** **Packaging:** Dimensions in mm Rev 2.4 page 8 2013-11-06 **BSL306N** ## **Published by** ## **Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 page 9 2013-11-06
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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