BSL302SNH6327XTSA1

Power MOSFET, N Channel, 30 V, 7.1 A, 0.018 ohm, TSOP, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
No. of Pins: 6Pins
Channel Type: N Channel
Product Range: OptiMOS 2
Qualification: AEC-Q101
Power Dissipation: 2W
Transistor Mounting: Surface Mount
Transistor Polarity: N Channel
Power Dissipation Pd: 2W
Rds(on) Test Voltage: 10V
On Resistance Rds(on): 0.018ohm
Transistor Case Style: TSOP
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 7.1A
Drain Source On State Resistance: 0.018ohm
Automotive Qualification Standard: AEC-Q101
Gate Source Threshold Voltage Max: 1.7V

Delivery and price
Units per pack	1
Price	0.101 €
Current stock	10+
Lead time	30 days

Datasheet

**BSL302SN** 

## **OptiMOS[®] 2 Small-Signal-Transistor** 

## **Features** 

- N-channel 

- Enhancement mode 

- Logic level (4.5V rated) 

|**Product Summary**|**Product Summary**|**Product Summary**|**Product Summary**|
|---|---|---|---|
|||||
|_V_DS||30|V|
|||||
|_R_DS(on),max|_V_GS=10 V|25|mW|
|||||
||_V_GS=4.5 V|38||
|||||
|_I_D||7.1|A|



- Avalanche rated 

- d _v_ /d _t_ rated 

- Pb-free lead plating; RoHS compliant 

- Qualified according to AEC Q101 

- Halogen free according to IEC61249-2-21 

**==> picture [91 x 87] intentionally omitted <==**

**----- Start of picture text -----**<br>
PG-TSOP-6<br>= 6 . 5<br>4<br>z<br>1<br>2<br>3<br>**----- End of picture text -----**<br>


||||**Marking**|||
|---|---|---|---|---|---|
|**Type**|**Package**|**Tape and Reel Information**||**Lead Free**|**Packing**|
||||sPE|||
|BSL302SN|PG-TSOP-6|H6327 = 3000 pcs. / reel||Yes|Non dry|



## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified 

|**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|||
|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**|
|Continuous drain current|_I_D<br>~~——~~|_T_A=25 °C<br>~~a~~|7.1<br>~~a~~|A<br>~~a~~<br>~~a~~<br>~~Ss~~|
|||_T_A=70 °C<br>~~a~~<br>~~——Ss~~|5.7<br>~~a~~<br>~~Ss~~||
|Pulsed drain current|_I_D,pulse<br>~~——~~|_T_A=25 °C<br>~~——Ss~~|28<br>~~Ss~~||
|Avalanche energy, single pulse|_E_AS<br>~~——~~|_I_D=7.1 A,_R_GS=25W<br>~~——Ss~~|30<br>~~Ss~~|mJ<br>~~Ss~~|
|Reverse diode d_v_/d_t_|d_v_/d_t_<br>~~{ot~~|_I_D=7.5 A,_V_DS=16 V,<br>d_i_/d_t_=200 A/µs,<br>_T_j,max=150 °C<br>~~{ot~~|6<br>~~{ot~~|kV/µs<br>~~{ot~~|
|Gate source voltage|_V_GS<br>~~ee~~|~~ee~~|±20<br>~~ee~~|V<br>~~ee~~|
|Power dissipation1)|_P_tot<br>~~ee~~|_T_A=25 °C<br>~~ee~~|2<br>~~ee~~|W<br>~~ee~~|
|Operating and storage temperature|_T_j,_T_stg<br>~~ee~~|~~ee~~|-55 ... 150<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|ESD Class|~~ee~~|JESD22-A114-HBM<br>~~ee~~|0 (0V to 250V)<br>~~ee~~||
|Soldering Temperature|~~ee~~|~~ee~~|260 °C<br>~~ee~~||
|IEC climatic category; DIN IEC 68-1|~~a ~~|~~a~~|55/150/56<br>~~ee~~|~~ee~~|



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||||||||**BSL302SN**|
|---|---|---|---|---|---|---|---|
|**Parameter**<br>**Symbol **<br>**Thermal characteristics**<br>~~se~~|||**Conditions**|**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~||||
||Thermal resistance,<br>junction - minimal footprint|_R_thJS|||-|-|50<br>K/W|
||SMD version, device on PCB|_R_thJA|minimal footprint||-|-|230|
||||6 cm2cooling area1)||-|-|62.5|



**Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified 

## **Static characteristics** 

|**Static characteristics**|||||||
|---|---|---|---|---|---|---|
|Drain-source breakdown voltage|_V_(BR)DSS|_V_GS=0 V,_I_D=250 µA|30|-|-|V|
|Gate threshold voltage|_V_GS(th)|_V_DS=VGS,_I_D=30 µA|1.2|1.70|2||
|Drain-source leakage current|_I_DSS|_V_DS=20 V,_V_GS=0 V,<br>_T_j=25 °C|-|-|1|mA|
|||_V_DS=20 V,_V_GS=0 V,<br>_T_j=150 °C|-|-|100||
|Gate-source leakage current|_I_GSS|_V_GS=20 V,_V_DS=0 V|-|-|100|nA|
|Drain-source on-state resistance|_R_DS(on)|_V_GS=4.5 V,_I_D=5.7 A|-|27|38|mW|
|||_V_GS=10 V,_I_D=7.1 A|-|18|25||
|Transconductance|_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=7.1 A||16|-|S|



1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) 

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**BSL302SN** 

|**BSL302SN**|**BSL302SN**|**BSL302SN**|**BSL302SN**|**BSL302SN**|**BSL302SN**|**BSL302SN**|
|---|---|---|---|---|---|---|
|**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~ee~~|||||||
|**Dynamic characteristics**|||||||
|Input capacitance|_C_iss||-|564|750|pF|
|Output capacitance|_C_oss|_V_GS=0 V,_V_DS=15 V,<br>_f_=1 MHz|-|202|269||
|Reverse transfer capacitance|Crss||-|28|43||
|Turn-on delay time|_t_d(on)||-|6.4|-|ns|
|Rise time|_t_r|_V_DD=15 V,_V_GS=10 V,|-|2.8|-||
|Turn-off delay time|_t_d(off)|_I_D=7.1 A,_R_G,ext=1.6W|-|13.7|-||
|Fall time|_t_f||-|1.9|-||
|Gate Charge Characteristics|||||||
|Gate to source charge|_Q_gs||-|1.78|2.37|nC|
|Gate to drain charge|_Q_gd|_V_DD=15 V,_I_D=7.1 A,|-|1.2|1.8||
|Gate charge total|_Q_g|_V_GS=0 to 5 V|-|4.4|6.6||
|Gate plateau voltage|_V_plateau||-|3.2|-|V|
|**Reverse Diode**|||||||
|Diode continous forward current|_I_S||-|-|2.5|A|
|||_T_A=25 °C|||||
|Diode pulse current|_I_S,pulse||-|-|28||
|Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=7.1 A,<br>_T_j=25 °C|-|0.8|1.2|V|
|Reverse recovery time|_t_rr|_V_R=15 V,_I_F=7.1 A,|-|14.2||ns|
|Reverse recovery charge|_Q_rr|d_i_F/d_t_=100 A/µs|-|5.1|-|nC|



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**BSL302SN** 

## **1 Power dissipation** 

_P_ tot=f( _T_ A) 

## **2 Drain current** 

_I_ D=f( _T_ A); _V_ GS≥10 V 

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8<br>2<br>7<br>6<br>1.6<br>5<br>1.2<br>4<br>0.8  3<br>2<br>0.4<br>1<br>0  0<br>0  40  80  120  160  0  40  80  120  160<br>T A [°C]  T A [°C]<br>4 Max. transient thermal impedance<br>I  D=f( V  DS);  T  A=25 °C;  D  =0 Z  thJA=f( t  p)<br>parameter:  t  p parameter:  D  = t  p/ T<br>10 [2 ] 10 [2 ]<br>limited by on-state<br>resistance  1 µs<br>10 µs  0.5<br>100 µs<br>10 [1 ]<br>0.2<br>1 ms  10 [1 ]<br>10 ms  0.1<br>10 [0 ] DC<br>0.05<br>0.02<br>10 [-1 ]<br>10 [0 ]<br>0.01<br>10 [-2 ]<br>single pulse<br>10 [-3 ] Lil 10 [-1 ]<br>10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [1 ]<br>V DS [V]  t p [s]<br>page 4 2014-01-09<br> [W]<br> [A]<br>P tot I D<br> [A]   [K/W]<br>I D<br>thJA<br>Z<br>**----- End of picture text -----**<br>


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**BSL302SN** 

## **5 Typ. output characteristics** 

_I_ D=f( _V_ DS); _T_ j=25 °C 

parameter: _V_ GS 

## **6 Typ. drain-source on resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS 

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30  60<br>10 V<br>28<br>7 V<br>26<br>50<br>24<br>4.5 V<br>22  4 V  3.5 V<br>20  40<br>3.7 V<br>18<br>16  4 V<br>3.7 V  30<br>14  4.5 V<br>12<br>3.5 V<br>10  20  7 V<br>10 V<br>8<br>6<br>10<br>4  3 V<br>2<br>2.7 V<br>0  0<br>0  1  2  3  0  4  8  12  16<br>V DS [V]  I D [A]<br>8 Typ. forward transconductance<br>=f( V  GS); |); | V  DS|>2||>2| I  D|| R  DS(on)max g  fs=f( I  D);  T  j=25 °C<br>8  20<br>7<br>6  15<br>5<br>4  10<br>25 °C<br>3<br>150 °C<br>2  5<br>1<br>0  0<br>0  1  2  3  4  5  0  1  2  3  4  5  6  7  8<br>V GS [V]  I D [A]<br>]<br>W<br> [m<br> [A]<br>I D<br>DS(on)<br>R<br>[A]   [S]<br>I D g fs<br>**----- End of picture text -----**<br>


_I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max 

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**BSL302SN** 

## **9 Drain-source on-state resistance** 

_R_ DS(on)=f( _T_ j); _I_ D=7.1 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

_V_ GS(th)=f( _T_ j); _V_ DS=VGS; _I_ D=30 µA parameter: _I_ D 

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50  2.8<br>2.4<br>40<br>2  98 %<br>30<br>98 %  1.6<br>typ<br>1.2<br>20  typ<br>2 %<br>0.8<br>10<br>0.4<br>0  0<br>-60  -20  20  60  100  140  -60  -20  20  60  100  140<br>T j [°C]  T j [°C]<br>12 Forward characteristics of reverse diode<br> =f( V  DS); );  V  GS=0 V; =0 V;  f  =1 MHz; Tj=25°Cj=25°C=25°C I  F=f( V  SD)<br>parameter:  T  j<br>10 [4 ] 10 [2 ]<br>10 [1 ]<br>10 [3 ]<br>Ciss<br>10 [0 ]<br>Coss<br>25 °C<br>10 [-1 ]<br>10 [2 ] 150 °C, 98%<br>150 °C<br>25 °C, 98%<br>Crss  10 [-2 ]<br>10 [1 ] 10 [-3 ]<br>0  aia 5  10  15  20  0  L 0.4  T] 0.8  1.2  1.6<br>V DS [V]  V SD [V]<br>]<br>W<br>[m  [V]<br>DS(on) V GS(th)<br>R<br>C  [pF]   [A]  I F<br>**----- End of picture text -----**<br>


## _C_ =f( _V_ DS); ); _V_ GS=0 V; =0 V; _f_ =1 MHz; Tj=25°Cj=25°C=25°C 

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**BSL302SN** 

## **13 Avalanche characteristics** 

_I_ AS=f( _t_ AV); _R_ GS=25 W 

parameter: _T_ j(start) 

## **14 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=7.1 A pulsed parameter: _V_ DD 

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10 [1 ] 10<br>9<br>25 °C<br>8<br>100 °C<br>125 °C<br>24 V<br>7<br>6<br>15 V<br>10 [0 ] 5<br>6 V<br>4<br>3<br>2<br>1<br>10 [-1 ] NZ 0<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 0  2  4  6  8  10<br>t AV [µs]  Q gate [nC]<br>16 Gate charge waveforms<br>V  BR(DSS)=f( T  j);  I  D=250 µA<br>36<br>V  GS<br>35<br>Q g<br>34<br>33<br>32<br>31<br>30  V  gs(th)<br>29<br>28<br>Q  g(th) Q  sw Q gate<br>27<br>26  Q  gs Q  gd<br>-60  r -20  20  60  100  al 140<br>T j [°C]<br>2014-01-09<br> [A]   [V]<br>I AV V GS<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**BSL302SN** 

## **Package Outline:** 

## **TSOP6** 

**Footprint:** 

## **Packaging:** 

Dimensions in mm 

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**BSL302SN** 

## Published by 

Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. 

## Legal Disclaimer 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## Information 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 

## Warnings 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user 

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Updated at February 9, 2023

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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