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BSL211SPH6327XTSA1
Power MOSFET, P Channel, 20 V, 4.7 A, 0.054 ohm, TSOP, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: P Channel
- Product Range: OptiMOS P
- Qualification: AEC-Q101
- Power Dissipation: 2W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: TSOP
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 4.7A
- Drain Source On State Resistance: 0.054ohm
- Gate Source Threshold Voltage Max: 900mV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.157 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSL211SP** _**Rev 2.0**_ ## **OptiMOS[] -P Small-Signal-Transistor** ## **Feature** - P-Channel - Enhancement mode - Super Logic Level (2.5 V rated) - 150°C operating temperature - Avalanche rated - d _v_ /d _t_ rated - Pb-free lead plating; RoHS compliant ## **Product Summary** **==> picture [122 x 52] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |V|DS|-20|V| |R|67|mΩ| |DS(on)| |I|D|-4.7|A| **----- End of picture text -----**<br> **==> picture [85 x 74] intentionally omitted <==** **----- Start of picture text -----**<br> P-TSOP6-6<br>4 3<br>5 2<br>6 1<br>**----- End of picture text -----**<br> - Qualified according to AEC Q101 - Halogen free according to IEC61249221 **==> picture [489 x 62] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |Drain| |pin 1,2,| |Gate|5,6| |Type|Package|Tape and reel|Marking|pin 3| |Source| |BSL211SP|P-TSOP6-6|H6327: 3000pcs/r.|sPB|pin 4| **----- End of picture text -----**<br> ## **Maximum Ratings** ,at _T_ j = 25 °C, unless otherwise specified **==> picture [484 x 338] intentionally omitted <==** **----- Start of picture text -----**<br> ||||||||||| |---|---|---|---|---|---|---|---|---|---| |Parameter|a|Symbol|Value|Unit| |Continuous drain current|I|D|A| |T|A=25°C|-4.7| |T|A=70°C|-3.8| |Pulsed drain current|I|-18.8| |D puls| |T|A=25°C| |Avalanche energy, single pulse|E|AS|26|mJ| |I|D=-4.7 A ,|V|DD=-10V,|R|GS=25Ω| |Reverse diode d|v|/d|t|d|v|/d|t|-6|kV/µs| |I|S=-4.7A,|V|DS=-16V, d|i|/d|t|=200A/µs,|T|jmax=150°C| |Gate source voltage|a|V|GS|ee|±12|V| |Power dissipation|P|tot|2|W| |T|A=25°C| |Operating and storage temperature|a|T|j ,|T|stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|55/150/56| |ESD Class| |Class 0| |JESD22-A114-HBM| ||| **----- End of picture text -----**<br> 2014-01-09 Page 1 > _**Rev 2.0**_ **BSL211SP** |**_Rev 2.02.0_**<br>Gafineon|<br>|**BSL211SP**<br>|**BSL211SP**<br>|**BSL211SP**<br>|**BSL211SP**<br>| |---|---|---|---|---|---| |**Thermal Characteristics**<br>**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>|**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~|||| |Thermal resistance, junction - soldering point|_R_thJS|-|-|50|K/W| |SMD version, device on PCB:|_R_thJA||||| |@ min. footprint||-|-|230|| |@ 6 cm2cooling area1)||-|-|62.5|| |Drain-source breakdown voltage<br>_V_GS=0V,_I_D=-250µA<br>||_V_(BR)DSS<br>|||-20<br>ft<br>||-<br>ft~~|~~<br>|||-<br>~~|~~<br>||V| |---|---|---|---|---|---| |Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-25µA<br>||_V_GS(th)<br>| |<br>pf|-0.6<br>ft<br>pf<br>||-0.9<br>ft<br>pf<br>|||-1.2<br><br>pf<br>||| |Zero gate voltage drain current<br>_V_DS=-20V,_V_GS=0,_T_j=25°C<br>_V_DS=-20V,_V_GS=0,_T_j=150°C|_I_DSS<br>tty|-<br>-<br>|<br>tty<br>ft|-0.1<br>-10<br>||<br>tty<br>ft|-1<br>-100<br>|<br>tty|µA| |Gate-source leakage current<br>_V_GS=-12V,_V_DS=0|_I_GSS<br>pot|-<br>pot<br>ft<br>||-10<br>pot<br>ft<br>|||-100<br>pot<br>||nA| |Drain-source on-state resistance<br>_V_GS=-2.5V,_I_D=-3.7A|_R_DS(on)<br>pf|-<br>ft<br>pf<br>||94<br>ft<br>pf<br>|||110<br>pf<br>||mΩ| |Drain-source on-state resistance<br>_V_GS=-4.5,_I_D=-4.7A|_R_DS(on)<br>P||-<br>|<br>P||54<br>||<br>P||67<br>|<br>P||| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. 2014-01-09 Page 2 > _**Rev 2.0**_ **BSL211SP** |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>~~|~~| |---|---|---|---|---|---|---| |**Dynamic Characteristics**||||||| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-3.8A<br>6.2<br>12.4<br>-<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>654<br>-<br>_C_oss<br>-<br>241<br>-<br>_C_rss<br>-<br>197<br>-<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>8.7<br>13<br>_t_r<br>-<br>13.9<br>21<br>_t_d(off)<br>-<br>25<br>37.3<br>_t_f<br>-<br>23.3<br>35<br>~~ee~~<br>=—_===<br>===|||||S<br>pF<br>ns| |**Gate Charge Characteristics**||||||| |Gate to source charge|_Q_gs|_V_DD=-10V,_I_D=-4.7A|-|-1.3|-2|nC| |Gate to drain charge|_Q_gd||-|-4.7|-7|| |Gate charge total|_Qg_|_V_DD=-10V,_I_D=-4.7A,|-|-8.3|-12.4|| |||_V_GS=0 to -4.5V||||| |Gate plateau voltage|_V_(plateau)<br>_V_DD=-10V,_I_D=-4.7A||-|-2|-|V| |**Reverse Diode**||||||| |Inverse diode continuous|_I_S|_T_A=25°C|-|-|-2|A| |forward current||||||| |Inverse diode direct current,|_I_SM||-|-|-18.8|| |pulsed||||||| |Inverse diode forward voltage|_V_SD|_V_GS=0, |_IF_| = |_ID_||-|-0.94|-1.4|V| |Reverse recovery time|_t_rr|_V_R=-10V, |_I_F| =|_l_D|,|-|20.6|25.8|ns| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100A/µs|-|6.3|7.9|nC| 2014-01-09 Page 3 **BSL211SP** _**Rev 2.0**_ ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: | _V_ GS|≥ 4.5 V **==> picture [225 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> BSL211SP<br>2.2<br>W<br>1.8 PAEPELEN) ELEEE<br>1.61.4 PELEEN \ EEE<br>PLEIN<br>1.2 N EEE<br>PLEA EEE<br>1<br>| 0.8 PLETE EEN, EEE<br>CECEEEEEEE NEEL<br>0.6 PELLETNT<br>0.4 PEA<br>0.2<br>0 CCRC<br>0 20 40 60 80 100 120 °C 160<br>— T A<br>tot<br>P<br>**----- End of picture text -----**<br> **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSL211SP<br>-5.5<br>A<br>-4.5 Ae—~LENEIN<br>-3.5-4 PLLEENE EEE<br>IN<br>-3 ELEEEELINE EEE<br>ELLE aN NEE<br>-2.5<br>-2<br>PELLET<br>CCEPCECEEENE<br>-1.5 LEE EEA \<br>-1 ELLE EEE<br>-0.5<br>0 PLLEEEL EELEEL<br>0 20 40 60 80 100 120 °C 160<br>—_> T A<br>D<br>I<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C ## **4 Transient thermal impedance** _Z_ thJS = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [487 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> -10 2 BSL211SP 10 2 BSL211SP<br>K/W<br>A ee t p = 41.0µs 10 1 ECCI CCM CC COC ert<br>Fe Pr OB O00) 000)A<br>-10 1 aSS A~]SS4 rt ttiNi|SaasN 100 µs Po SSeSi rer TC oNrr<br> 1 ms 10 0<br>gf UITUeITI I<br>A | Sessee<br>-10 0 10 ms 10 -1<br>NE LUI Nia Tit COMES SITE IIE UT<br>D = 0.50<br>roe EN ELT +H} At} eee 0.20 HHH<br>| 10 -2 UIA UMN 0.10 TIT<br>-10 -1 DC single pulse 0.050.02<br>iei edee ascTT 10 -3 AAAA |(OREae HT 0.01 ul<br>-10 -2 a lll 10 -4 aEU ETIIM aTEINaTEIN TET|TET TET|TUT<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ] 10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>—_ V DS ——__ P t p<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>thJS<br>D<br>I Z<br>**----- End of picture text -----**<br> 2014-01-09 Page 4 **BSL211SP** _**Rev 2.0**_ ## **5 Typ. output characteristic** _I_ D = _f_ ( _V_ DS); _T_ j=25°C parameter: _t_ p = 80 µs ## **6 Typ. drain-source on resistance** _R_ DS(on) = _f_ ( _I_ D) parameter: _V_ GS **==> picture [479 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> 30 0.2<br>Vgs = -3.5V<br>Ω Vgs = -2.3V Vgs = -3V<br>A<br>Vgs = -2.5V<br>Vgs = -3.5V<br>Vgs = -4V<br>Vgs = -4.5V 0.15 Vgs = - 4V<br>y V oo gs = -5.5V et Vgs = - 4.5V<br>20 Vgs = -7V Vgs = -3V Vgs= - 5.5V<br>0.125 Vgs = - 7V<br>15 0.1<br>0.075<br>Vgs = -2.5V<br>10<br>TTT age<br>0.05<br>Vgs = -2.3V<br>5<br>poor SS=-<br>0.025<br>Vgs = -2V<br>poo PEEL,<br>0 0<br>0 1 2 3 4 5 6 7 8 V 10 0 5 10 15 20 A 30<br>- V DS - I D<br>I D- R DS(on)<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D= _f_ ( _V_ GS ); | _V_ DS|≥ 2 x| _I_ D| x _R_ DS(on)max parameter: _t_ p = 80 µs ## **8 Typ. forward transconductance** _g_ fs = f( _I_ D); _T_ j=25°C parameter: _t_ p = 80 µs **==> picture [479 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> 32 24<br>A S<br>THOTT FL<br>24 PAPAPOOLE 18 ECF<br>20 16 POOLE 15 12 EEE<br>12 9<br>» COO) oy Gee<br>8 PCECEPVE | 6 EEE<br>4 3<br>TAT) Eee<br>0 TCA CE s 0 s&s<br>0 0.4 0.8 1.2 1.6 2 2.4 2.8 V 3.6 0 4 8 12 16 20 24 A 32<br>- V GS - I D<br>I D- g fs<br>**----- End of picture text -----**<br> 2014-01-09 Page 5 **BSL211SP** _**Rev 2.0**_ ## **9 Drain-source on-resistance** _R_ DS(on) = f( _T_ j) parameter: _I_ D = -4.7 A, _V_ GS = -4.5 V ## **10 Gate threshold voltage** _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS, _I_ D = -25 µA **==> picture [482 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 90 1.4<br>V<br>mΩ<br>98%<br>1<br>70 LLL EAL Deeetanean<br>0.8<br>98% typ.<br>TU vanw2 0.6 SL PRNUEL I.<br>60<br>| ATT ). CERCESSOT<br>2%<br>0.4<br>typ.<br>ATLA TTT PTT PNT<br>50<br>te AP<br>0.2<br>40 MOLLE, = G 0 eo<br>-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160<br>T T<br>j j<br>DS(on) GS(th)<br>R V -<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ = _f_ ( _V_ DS) parameter: _V_ GS=0, _f_ =1 MHz ## **12 Forward character. of reverse diode** _I_ F = _f_ (VSD) parameter: _T_ j , tp = 80 µs **==> picture [479 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 3 -10 2 BSL211SP<br>—— e S<br>A<br>SS en ===============<br>i Ciss FEEEECEEELL EEE<br>oT = ATT Le<br>-10 1<br>pF Coss<br>Sa | SSE<br>-10 0<br>Crss T j = 25 °C typ<br>T j = 150 °C typ<br>| UPI TT jj = 25 °C (98%) = 150 °C (98%) an<br>10 2 -10 -1 iin Ie<br>0 5 10 V 20 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br> - V DS V SD<br>F<br>I<br>C<br>**----- End of picture text -----**<br> 2014-01-09 Page 6 **BSL211SP** _**Rev 2.0**_ ## **13 Typ. avalanche energy** _E_ AS = _f_ ( _T_ j), par.: _I_ D = -4.7 A _V_ DD = -10 V, _R_ GS = 25 Ω **==> picture [227 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>mJ<br>MEE<br>NECEE)<br>20<br>15<br>IN\ |<br>10<br>50 et | NE<br>25 50 75 100 °C 150<br>T<br>j<br>AS<br>E<br>**----- End of picture text -----**<br> ## **14 Typ. gate charge** | _V_ GS| = _f_ ( _Q_ Gate) parameter: _I_ D = -4.7 A pulsed **==> picture [228 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>V<br>10 Gee<br>9<br>FRESE<br>8<br>0.2 VDS max.<br>0.5 VDS max.<br>7<br>0.8 VDS max.<br>6<br>fff<br>5<br>f FEE AA ~~<br>4<br>3 nny//4neen<br>2<br>1<br>0 ACEC<br>0 2 4 6 8 10 12 14 nC 18<br>| Q Gate|<br>GS<br>V<br>-<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) **==> picture [227 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> BSL211SP<br>-24.5<br>V COCO<br>-CECECEPE ECE<br>-23.5 SCECECELEECE<br>-23<br>-22.5 CEP<br>-22 CECE SCECECE ALE<br>-21.5 -CECECE VALE<br>-21<br>-20.5<br>EO<br>-20 CCE “CEA CEEEECECE<br>-19.5 SOZCECELEECE<br>-19 SAECELEEE ELE<br>-18.5 ACCCECEEEL<br>-18<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> 2014-01-09 Page 7 **BSL211SP BSS308P** rc ## **Published by** ## **Infineon Technologies AG** ## **81726 Munich, Germany** ## **© 2009 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2014-01-09 page 8
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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