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BSL207SP L6327
Power MOSFET, P Channel, 20 V, 6 A, 0.041 ohm, TSOP, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.029ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; P
- No. of Pins: 6Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 2W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: TSOP
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 6A
- Drain Source On State Resistance: 0.041ohm
- Gate Source Threshold Voltage Max: 900mV
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.207 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSL207SP** _**Rev. 2.04**_ ## **OptiMOS[] -P Small-Signal-Transistor** ## **Feature** - P-Channel - Enhancement mode - Super Logic Level (2.5 V rated) |_V_DS|-20|V| |---|---|---| |_R_DS(on)|41|mΩ| |DS(on)<br>_I_D|-6|A| |**Maximum Ratings**,at_T_j= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|| |---|---|---|---| |j<br>**Parameter**|**Symbol**<br>rf|**Value**<br>rf|**Unit**| |Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D<br>rf|-6<br>-4.8<br>rf|A| |Pulsed drain current<br>_T_A=25°C|_I_D puls<br>fo|-24<br>fo|| |Avalanche energy, single pulse<br>_I_D=-6 A ,_V_DD=-10V,_R_GS=25Ω|_E_AS<br>fo|44<br>fo|mJ| |Reverse diode d_v_/d_t_<br>_I_S=-6A,_V_DS=-16V, d_i_/d_t_=200A/µs,_T_jmax=150°C|d_v_/d_t_<br>fo<br>ee|-6<br>fo<br>eee|kV/µs| |Gate source voltage|_V_GS<br>ee|±12<br>eee|V| |Power dissipation<br>_T_A=25°C|_P_tot<br>ee <br>fo<br>ee|2<br> eee<br>fo<br>ee|W| |Operating and storage temperature|_T_j,_T_stg<br>ee<br>ee|-55... +150<br>ee<br>eee|°C| |IEC climatic category; DIN IEC 68-1|jg<br>ee<br>ee|55/150/56<br>ee<br>eee|| |ESD Class<br>JESD22-A114-HBM|ee<br>ef|Class 1a<br>eee<br>ef|| 2012-03-14 Page 1 **BSL207SP** _**Rev. 2.04**_ **Thermal Characteristics** |**Thermal Characteristics**|||||| |---|---|---|---|---|---| |**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~||||| |Thermal resistance, junction - soldering point|_R_thJS|-|-|50|K/W| |SMD version, device on PCB:|_R_thJA||||| |@ min. footprint||-|-|230|| |@ 6 cm2cooling area1)||-|-|62.5|| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>|<br>||_V_(BR)DSS<br>|<br>|<br>||-20<br>fT|-<br>fT||-<br>||V| |---|---|---|---|---|---| |Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-40µA<br>|<br>||_V_GS(th)<br>|<br>|<br>|<br>||-0.6<br>fT<br>tf|-0.9<br>fT|<br>tf|-1.2<br>|<br>tf|| |Zero gate voltage drain current<br>_V_DS=-20V,_V_GS=0,_T_j=25°C<br>_V_DS=-20V,_V_GS=0,_T_j=150°C<br>|<br>||_I_DSS<br>|<br>ttt<br>|||-<br>-<br><br>ttt<br>tt|-0.1<br>-10<br>|<br>ttt<br>tt|-1<br>-100<br>|<br>ttt<br>tt|µA| |Gate-source leakage current<br>_V_GS=-12V,_V_DS=0<br>|<br>||_I_GSS<br>||<br>|<br>||-<br>tt<br>tf|-10<br>tt<br>tf|-100<br>tt<br>tf|nA| |Drain-source on-state resistance<br>_V_GS=-2.5V,_I_D=-4.9A<br>|<br>||_R_DS(on)<br>| |<br>|<br>||-<br>tt<br>tf|43<br>tt<br>tf|65<br>tt<br>tf|mΩ| |Drain-source on-state resistance<br>_V_GS=-4.5,_I_D=-6A<br>||_R_DS(on)<br>|<br>|<br>||-<br>tf<br> tf|29<br>tf<br>tf|41<br>tf<br>tf|| 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. 2012-03-14 Page 2 > _**Rev. 2.04**_ **BSL207SP** |**_Rev. 2.044_**<br>Cfineon|**_Rev. 2.044_**<br>Cfineon|**_Rev. 2.044_**<br>Cfineon|**_Rev. 2.044_**<br>Cfineon||**BSL207SP**<br>|**BSL207SP**<br>| |---|---|---|---|---|---|---| |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**min.**<br>~~|~~||||**Values**<br>**typ.**<br>~~|~~|**max.**<br>~~|~~|**Unit**<br>~~|~~| |~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~|~~| |**Dynamic Characteristics**||||||| |Transconductance<br>Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time|_g_fs<br>_V_DS≥2∗ID∗RDS(on)max,<br>_I_D=-4.8A<br>7<br>14<br>-<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>1007<br>-<br>_C_oss<br>-<br>410<br>-<br>_C_rss<br>-<br>332<br>-<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-1A,_R_G=6Ω<br>-<br>9<br>14<br>_t_r<br>-<br>17<br>26<br>_t_d(off)<br>-<br>42<br>63<br>_t_f<br>-<br>53<br>76<br>~~Pr~~<br>=—_===<br>===|||||S<br>pF<br>ns| |**Gate Charge Characteristics**||||||| |Gate to source charge|_Q_gs|_V_DD=-10V,_I_D=-6A|-|-1.7|-2.6|nC| |Gate to drain charge|_Q_gd||-|-7.1|-10.7|| |Gate charge total|_Qg_|_V_DD=-10V,_I_D=-6A,|-|-13.3|-20|| |||_V_GS=0 to -4.5V||||| |Gate plateau voltage|_V_(plateau)<br>_V_DD=-10V,_I_D=-6A||-|-1.6|-|V| |**Reverse Diode**||||||| |Inverse diode continuous|_I_S|_T_A=25°C|-|-|-2.3|A| |forward current||||||| |Inverse diode direct current,|_I_SM||-|-|-24|| |pulsed||||||| |Inverse diode forward voltage|_V_SD|_V_GS=0, |_IF_| = |_ID_||-|-0.9|-1.3|V| |Reverse recovery time|_t_rr|_V_R=-10V, |_I_F| =|_l_D|,|-|29|36|ns| |Reverse recovery charge|_Q_rr|d_i_F/d_t_=100A/µs|-|12|15|nC| 2012-03-14 Page 3 **BSL207SP** ## _**Rev. 2.04**_ ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: | _V_ GS|≥ 4.5 V **==> picture [225 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> BSL207SP<br>2.2<br>W<br>ELLE<br>PAA EL ELLELLE<br>1.8<br>TNE<br>1.6<br>CONTEC<br>1.4<br>\<br>1.2 LENE TT<br>1 PITTPETETTT ITNEEETTT ET]<br>0.8<br>CEEEELELEN ELE<br>0.6<br>CCPC<br>0.4<br>COCCI NE<br>0.2<br>LEE LL ELELEL EN. \<br>0<br>0 20 40 60 80 100 120 °C 160<br>T A<br>tot<br>P<br>**----- End of picture text -----**<br> **==> picture [225 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSL207SP<br>-6.5<br>A<br>ET ET TE EE<br>-5.5<br>JINGLE<br>-5 LENE<br>TT<br>-4.5<br>Peper Sey<br>-4<br>LT TET TENG EET TT<br>-3.5 PLT INT<br>-3 PELLET NET<br>-2.5 PLETE LELE ELE ENE<br>-2<br>SERRRRRRERRER<br>Pee<br>-1.5<br>NEE<br>-1<br>NS<br>-0.5<br>FLEP E EE L E L EELLAET<br>0<br>0 20 40 60 80 100 120 °C 160<br>T A<br>D<br>I<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D = _f_ ( _V_ DS ) parameter : _D_ = 0 , _T_ A = 25 °C ## **4 Transient thermal impedance** _Z_ thJS = _f_ ( _t_ p) parameter : _D_ = _t_ p/ _T_ **==> picture [487 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> -10 2 BSL207SP 10 2 BSL207SP<br>K/W<br>A<br>t p = 130.0µs tH)<br>10 1<br>-10 1<br> 1 ms<br>== se ae 10 0 HHH Hee<br> 10 ms<br>-10 0 10 -1<br>D = 0.50<br>0.20<br>10 -2 0.10<br>-10 -1 0.05<br>DC 0.02<br>Sse me 10 -3 CC C 0.01<br>single pulse<br>-2 -4<br>-10 a a el 10 PCCM UMC ECMTCT<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ] 10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>—_ V DS ——_ t p<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>thJS<br>D<br>I Z<br>**----- End of picture text -----**<br> 2012-03-14 Page 4 **BSL207SP** ## _**Rev. 2.04**_ ## **5 Typ. output characteristic** ## **6 Typ. drain-source on resistance** _I_ D = _f_ ( _V_ DS); _T_ j=25°C parameter: _t_ p = 80 µs _R_ DS(on) = _f_ ( _I_ D) parameter: _V_ GS **==> picture [479 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> 60 0.065<br>A oo Vgs = -3.5V To Ω TEE Vgs = -2.2V<br>Vgs = -3V Vgs = -2V<br>50<br>0.055 Vgs= - 3V<br>45 ==ae annoeee oeSVAnRnnnED/|To Vgs = - 4V<br>Vgs = -4V 0.05 Vgs = - 4.5V<br>40 Vgs= - 5V<br>oe Vgs = -4.5V e e 0.045 s [Ann] Vgs = - 6V<br>35 fe Vgs = -6V 2 Vgs= - 8V<br>Vgs = -10V Vgs = -2.5V 0.04<br>30<br>BAe, CO)<br>0.035<br>25 Vgs = -2.5V<br>2) 0.03 LETT<br> Pan 20 el eet ee<br>0.025<br>15<br>10 PO y | ob [|] Vgs = -2V 0.02 eee<br>Vgs = - 10V<br>5 . PT - 0.015 i caannnnneeell<br>Aeseeceeet ttt to<br>0 0.01<br>0 1 2 3 4 5 6 7 8 V 10 0 4 8 12 16 20 24 A 30<br>- V DS - I D<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>D== f ( V GS ); | ); | V DS|≥ 2 x ||≥ 2 x |≥ 2 x | 2 x | I D| x | x R DS(on)max g fs = f( I D); T j=25°C<br>parameter: t p = 80 µs = 80 µs parameter: t p = 80 µs<br>22 20<br>A<br>ee S a<br>18<br>TTT ee<br>16<br>TTT y<br>14<br>12<br>TTT PVE] | f<br>12<br>10<br>creer] d /l] ld<br>8<br>t oPPrery) 8 +<br>6<br>THT Py py<br>4<br>4<br>pS,<br>2<br>0 HA 0 Tl<br>0 0.5 1 1.5 2 V 3 0 4 8 12 16 A 24<br>- V GS - I D<br>I D- R DS(on)<br>I D- g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D== _f_ ( _V_ GS ); | ); | _V_ DS|≥ 2 x ||≥ 2 x |≥ 2 x | 2 x | _I_ D| x | x _R_ DS(on)max parameter: _t_ p = 80 µs = 80 µs 2012-03-14 Page 5 **BSL207SP** ## _**Rev. 2.04**_ ## **9 Drain-source on-resistance** _R_ DS(on) = f( _T_ j) parameter: _I_ D = -6 A, _V_ GS = -4.5 V ## **10 Gate threshold voltage** _V_ GS(th) = _f_ ( _T_ j) parameter: _V_ GS = _V_ DS, _I_ D = -40 µA **==> picture [482 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> 55 1.4<br>mΩ ELLER V<br>7 er ) PELEPS<br>98%<br>45 ELLE TEE, 1 LEE—— - 98% S PNELE<br>we oe _<br>/<br>40 0.8<br>typ.<br>35 eT2 L EAL,O, 0.6 Peoo e >enLAWLN Nene<br>typ.<br>2%<br>TTT) CEES<br>30 TALE 0.4 LEE LLLP.<br>25 0.2<br>PELE PCCP<br>20 0<br>-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160<br>T T<br>— j j<br>DS(on) GS(th)<br>R V -<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** ## **12 Forward character. of reverse diode** ## _C_ = _f_ ( _V_ DS) _I_ F = _f_ (VSD) parameter: _V_ GS=0, _f_ =1 MHz parameter: _T_ j , tp = 80 µs **==> picture [440 x 265] intentionally omitted <==** **----- Start of picture text -----**<br> 10 4 | -10 2 a BSL207SP<br>a E<br>a A P 4<br>pF<br>1 -10 1 1 aT<br>Pf |eer<br>Ciss<br>a eer<br>10 3 \———_—_—S—_— FRBanaoe<br>—————— PTI TPYAT TPYAT ITT IT TT TT I<br>Coss<br>(SSSYYSp~_ | -10 0 0 —— ss//<br>T j = 25 °C typ = 25 °C typ<br>| ee SE<br>Crss T j = 150 °C typ = 150 °C typ<br>[ P| anieie T j = 25 °C (98%) = 25 °C (98%)<br>T j = 150 °C (98%) = 150 °C (98%)<br>10 2 -10 -1 -1<br>0 5 10 V 20 0 -0.4 -0.8 -1.2 -1.6 -2<br>— - V DS —<br>F<br>I<br>C<br>**----- End of picture text -----**<br> **==> picture [224 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>-10 1 1 aT<br>|eer<br>anFRBanaoe<br>PTI TPYAT TPYAT ITT IT TT TT I |<br>-10 0 0 —— ss// =———<br>SE T j = 25 °C typ = 25 °C typ ===<br>T j = 150 °C typ = 150 °C typ<br>anieie T j = 25 °C (98%) = 25 °C (98%) Cor[|]<br>T j = 150 °C (98%) = 150 °C (98%)<br>-10 -1 -1<br>0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>— V SD<br>F<br>I<br>**----- End of picture text -----**<br> 2012-03-14 Page 6 **BSL207SP** ## _**Rev. 2.04**_ ## **13 Typ. avalanche energy** ## **14 Typ. gate charge** | _V_ GS| = _f_ ( _Q_ Gate) parameter: _I_ D = -6 A pulsed = -6 A pulsed _E_ AS = _f_ ( _T_ j), par.: _I_ D = -6 A **==> picture [486 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> V DD = -10 V, R GS = 25 Ω parameter: I D = -6 A pulsed = -6 A pulsed<br>45 12<br>V<br>mJ<br>10<br>MEE} ~ELELLLEL<br>35 = FEED<br>9 meen<br>30 8<br>\JP 0.2 VDS max. 4/74<br>0.5 VDS max.<br>7<br>25 ek |ft ff t ft 0.8 VDS max. SLL2/4<br>6<br>20 I\t | Lt Aff<br>5<br>fh . 4/4<br>15 EN TP) oft 4 Se vo<br>3<br>10 | [Qt Lt 27/4<br>2<br>5<br>NN 1 jf<br>0 NT 0 PCL| LELL,<br>25 50 75 100 °C 150 0 4 8 12 16 20 nC 28<br>T j | Q Gate|<br>AS GS<br>V<br>E -<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ (BR)DSS = _f_ ( _T_ j) **==> picture [227 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> BSL207SP<br>-24.5<br>V COLE<br>Clee eee<br>-23.5 COE eee<br>-23<br>-22.5 COO<br>-22 COOLCCEA<br>-21.5 CEEOL<br>-21<br>-20.5<br>a we’ cesses<br>-20 COA EEE<br>-19.5 TCC EEE<br>-19 PLCCCEEEE<br>-18.5 “COCLT<br>-18<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> 2012-03-14 Page 7 **BSL207SP** ## _**Rev. 2.04**_ ## Infineon Technologies AG 2012-03-14 Page 8
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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