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BSH205G2R
Power MOSFET, P Channel, 20 V, 2 A, 0.17 ohm, TO-236AB, Surface Mount
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- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 480mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: TO-236AB
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 2A
- Drain Source On State Resistance: 0.17ohm
- Gate Source Threshold Voltage Max: 700mV
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.155 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Product data sheet** **==> picture [16 x 65] intentionally omitted <==** **----- Start of picture text -----**<br> rey<br>SOT23<br>**----- End of picture text -----**<br> ## **BSH205G2** ## **20 V, P-channel Trench MOSFET 29 April 2015** ## **1. General description** P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ## **2. Features and benefits** - Low threshold voltage - Low on-state resistance - Trench MOSFET technology - Enhanced power dissipation capability of 890 mW - AEC-Q101 qualified ## **3. Applications** - Relay driver - High-speed line driver - High-side loadswitch - Switching circuits ## **4. Quick reference data** **Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit** ~~a~~ VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V ~~a ee~~ ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s ~~|~~ [1] ~~of~~ - ~~ot[tt]~~ - -2.3 A ~~a~~ **Static characteristics** ~~ce~~ RDSon drain-source on-state VGS = -4.5 V; ID = -2 A; Tj = 25 °C - 120 170 mΩ resistance ~~eeeeee~~ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm[2] . Scan or click this QR code to view the latest information for this product **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **5. Pinning information** ## **Table 2. Pinning information** |**Pin**|**Symbol**|**Description**|**Simplified outline**|**Graphic symbol**| |---|---|---|---|---| |1|G|gate|1<br>2<br>3<br>**TO-236AB (SOT23)**|S<br>D<br>G<br>_017aaa257_| |2|S|source||| |3|D|drain||| ## **6. Ordering information** **Table 3. Ordering information** |**Type number**|**Package**||| |---|---|---|---| ||**Name**|**Description**|**Version**| |BSH205G2|TO-236AB|plastic surface-mounted package; 3 leads|SOT23| ## **7. Marking** **Table 4. Marking codes** |**Type number**|**Marking code**<br>**[1]**| |---|---| |BSH205G2|%KB| [1] % = placeholder for manufacturing site code © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **2 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **8. Limiting values** **Table 5. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ **Symbol Parameter Conditions Min Max Unit** ~~ee rs rs (OO~~ VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage -8 8 V ~~ee | ee~~ ID ~~ee~~ drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -2.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -2 A VGS = -4.5 V; Tamb = 100 °C [1] - -1.2 A ~~Bf~~ ~~**ee** ee ee ee~~ IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -8 A Ptot total power dissipation Tamb = 25 °C [2] - 480 mW ~~>~~ [1] - 890 mW Tsp = 25 °C - 6250 mW ~~i eeee~~ Tj junction temperature -55 150 °C ~~ee ee ee ee~~ Tamb ambient temperature -55 150 °C ~~eees~~ Tstg storage temperature -65 150 °C ~~a~~ **Source-drain diode** ~~Ce~~ IS source current Tsp = 25 °C [1] - -0.8 A ~~ee~~ [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm[2] . [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. **==> picture [462 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> 017aaa123 017aaa124<br>120 120<br>Pder Ider<br>(%) (%)<br>TOIT §8 fi<br>80 80<br>COOONSEE) «= CCN<br>CCN) «= CCN<br>40 40<br>CoCCONE) «= CEN<br>CeCe) = CCN<br>0 0<br>- 75 PoC) - 25 25 75 125 175 = - 75 CEE - 25 25 75 125 175<br>Tj (°C) Tj (°C)<br>Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a<br>function of junction temperature function of junction temperature<br>**----- End of picture text -----**<br> All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 **Product data sheet** **29 April 2015 3 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> aaa-016178<br>-10<br>tp = 10 µs<br>ID Limit RDSon = VDS/ID tp = 100 µs<br>(A)<br>-1 t p = 1 ms<br>tp = 10 ms<br>-10 [-1] DC; T sp = 25 °C tp = 100 ms<br>DC; T amb = 25 °C;<br>drain mounting pad 6 cm [2]<br>-10 [-2]<br>-10 [-1] -1 -10 -10 [2]<br>VDS (V)<br>**----- End of picture text -----**<br> IDM = single pulse **Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage** ## **9. Thermal characteristics** ## **Table 6. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |Rth(j-a)|thermal resistance<br>from junction to<br>ambient|in free air|[1]|-|230|260|K/W| ||||[2]|-|120|140|K/W| |||in free air; t ≤ 5 s|[2]|-|85|100|K/W| |Rth(j-sp)|thermal resistance<br>from junction to solder<br>point|||-|15|20|K/W| [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm[2] . © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **4 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** **==> picture [481 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> aaa-011994<br>10 [3]<br>Zth(j-a)<br>(K/W) duty cycle = 1<br>0.75<br>0.50<br>10 [2]<br>0.33<br>0.25<br>0.20<br>0.10<br>0.05<br>10 0.02<br>0.01<br>0<br>1<br>10 [-3] 10 [-2] 10 [-1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, standard footprint **Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** **==> picture [481 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> aaa-011995<br>10 [3]<br>Zth(j-a)<br>(K/W)<br>duty cycle = 1<br>10 [2] 0.75<br>0.50<br>0.33<br>0.25<br>0.20<br>0.10 0.05<br>10<br>0.02<br>0.01<br>0<br>1<br>10 [-3] 10 [-2] 10 [-1] 1 10 10 [2] 10 [3]<br>tp (s)<br>**----- End of picture text -----**<br> FR4 PCB, mounting pad for drain 6 cm[2] **Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values** © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **5 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **10. Characteristics** |**10. Characteristics**|**10. Characteristics**||||||| |---|---|---|---|---|---|---|---| |**Table 7.**<br>**Characteristics**|||||||| |**Symbol**|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**| |**Static characteristics**|||||||| |V(BR)DSS|drain-source<br>breakdown voltage|ID= -250 µA; VGS= 0 V; Tj= 25 °C||-20|-|-|V| |VGSth|gate-source threshold<br>voltage|ID= -250 µA; VDS= VGS; Tj= 25 °C||-0.45|-0.7|-0.95|V| |IDSS|drain leakage current|VDS= -20 V; VGS= 0 V; Tj= 25 °C||-|-|-1|µA| |IGSS|gate leakage current|VGS= 8 V; VDS= 0 V; Tj= 25 °C||-|-|100|nA| |||VGS= -8 V; VDS= 0 V; Tj= 25 °C||-|-|-100|nA| |RDSon|drain-source on-state<br>resistance|VGS= -4.5 V; ID= -2 A; Tj= 25 °C||-|120|170|mΩ| |||VGS= -4.5 V; ID= -2 A; Tj= 150 °C||-|168|238|mΩ| |||VGS= -2.5 V; ID= -1.5 A; Tj= 25 °C||-|150|230|mΩ| |||VGS= -1.8 V; ID= -0.6 A; Tj= 25 °C||-|200|320|mΩ| |||VGS= -1.5 V; ID= -0.1 A; Tj= 25 °C||-|260|600|mΩ| |gfs|forward<br>transconductance|VDS= -10 V; ID= -2 A; Tj= 25 °C||-|4.5|-|S| |**Dynamic characteristics**|||||||| |QG(tot)|total gate charge|VDS= -10 V; ID= -2 A; VGS= -4.5 V;<br>Tj= 25 °C||-|3.7|6.5|nC| |QGS|gate-source charge|||-|0.6|-|nC| |QGD|gate-drain charge|||-|0.8|-|nC| |Ciss|input capacitance|VDS= -10 V; f = 1 MHz; VGS= 0 V;<br>Tj= 25 °C||-|418|-|pF| |Coss|output capacitance|||-|45|-|pF| |Crss|reverse transfer<br>capacitance|||-|34|-|pF| |td(on)|turn-on delay time|VDS= -10 V; ID= -2 A; VGS= -4.5 V;<br>RG(ext)= 6 Ω; Tj= 25 °C||-|5|-|ns| |tr|rise time|||-|14|-|ns| |td(off)|turn-off delay time|||-|43|-|ns| |tf|fall time|||-|16|-|ns| |**Source-drain diode**|||||||| |VSD|source-drain voltage|IS= -0.8 A; VGS= 0 V; Tj= 25 °C||-|-0.8|-1.2|V| © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **6 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** **==> picture [497 x 482] intentionally omitted <==** **----- Start of picture text -----**<br> aaa-016179 aaa-016180<br>-8 -10 [-3]<br>ID VGS = -4.5 V -3 V -2.5 V<br>(A) ID<br>(A)<br>-6<br>-2.2 V<br>-10 [-4]<br>-4<br>-1.8 V<br>min typ max<br>-10 [-5]<br>-2<br>-1.5 V<br>-1.2 V<br>0 -10 [-6]<br>0 -1 -2 -3 -4 0 -0.5 -1.0 -1.5<br>VDS (V) VGS (V)<br>Tj = 25 °C Tj = 25 °C; VDS = -5 V<br>Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of<br>function of drain-source voltage; typical values gate-source voltage<br>aaa-016181 aaa-016182<br>0.8 0.8<br>-1.2 V -1.5 V -1.8 V -2.2 V<br>RDSon RDSon<br>-2.5 V (Ω)<br>0.6 0.6<br>0.4 0.4<br>Tj = 150 °C<br>-3 V<br>0.2 0.2<br>VGS = -4.5 V T j = 25 °C<br>0 0<br>0 -2 -4 -6 -8 0 -1 -2 -3 -4 -5<br>ID (A) VGS (V)<br>Tj = 25 °C ID = -2 A<br>Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function<br>of drain current; typical values of gate-source voltage; typical values<br>**----- End of picture text -----**<br> © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **7 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** **==> picture [456 x 229] intentionally omitted <==** **----- Start of picture text -----**<br> aaa-016183 aaa-016184<br>-8 2.0<br>ID Tj = 150 °C a<br>(A) e/a PE tt | |yd<br>-6 1.5<br>BRR 4a Pt tT TT TT<br>Tj = 25 °C<br>-4 PitfeAE TT 1.0 pt | ttfed<br>PTT TAT TT P|Lttpert|<br>-2 TEV | | 0.5 Pitt| [| tt<br>PT TAT TT Pt TT |TT| yd<br>0 0<br>(TY! | | tl PT [TTT] TTTy<br>0 -1 -2 -3 -4 -60 0 60 120 180<br>VGS (V) Tj (°C)<br>VDS > ID × RDSon Fig. 11. Normalized drain-source on-state resistance<br>Transfer characteristics: drain current as a as a function of junction temperature; typical<br>values<br>**----- End of picture text -----**<br> **Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values** **==> picture [442 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> aaa-016185 aaa-016186<br>-1.2 10 [3]<br>VGS(th)<br>(V) C Ciss<br>(pF)<br>-0.8<br>aR con t<br>max<br>10 [2]<br>-0.4 typ<br>Coss<br>Crss<br>0 PEELEPETRA E P min 10 atime TAM CT ae<br>-60 0 60 120 180 -10 [-1] -1 -10 -10 [2]<br>Tj (°C) VDS (V)<br>ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V<br>**----- End of picture text -----**<br> **Fig. 12. Gate-source threshold voltage as a function of junction temperature** **Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values** © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **8 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** **==> picture [497 x 470] intentionally omitted <==** **----- Start of picture text -----**<br> aaa-016187<br>-5<br>VGS VDS<br>(V)<br>-4 ID<br>VGS(pl)<br>-3<br>VGS(th)<br>-2 VGS<br>QGS1 QGS2<br>-1 QGS QGD<br>QG(tot)<br>003aaa508<br>0<br>0 1 2 3 4 Fig. 15. MOSFET transistor: Gate charge waveform<br>QG (nC) definitions<br>ID = -2 A; VDS = -10 V; Tamb = 25 °C<br>Fig. 14. Gate-source voltage as a function of gate<br>charge; typical values<br>aaa-016188<br>-4<br>IS<br>(A)<br>-3<br>Tj = 150 °C<br>-2<br>Tj = 25 °C<br>-1<br>0<br>0 -0.4 -0.8 -1.2<br>VSD (V)<br>VGS = 0 V<br>Fig. 16. Source current as a function of source-drain voltage; typical values<br>**----- End of picture text -----**<br> ## **11. Test information** **==> picture [121 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> P duty cycle δ = t1<br>t2 t2<br>t1<br>t<br>006aaa812<br>**----- End of picture text -----**<br> **==> picture [125 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 17. Duty cycle definition<br>**----- End of picture text -----**<br> **==> picture [27 x 5] intentionally omitted <==** **----- Start of picture text -----**<br> BSH205G2<br>**----- End of picture text -----**<br> All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved **Product data sheet** **29 April 2015** **9 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **11.1 Quality information** This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **10 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **12. Package outline** **==> picture [481 x 575] intentionally omitted <==** **----- Start of picture text -----**<br> Plastic surface-mounted package; 3 leads SOT23<br>D B E A X<br>HE v A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>Dimensions (mm are the original dimensions)<br>Unit A A1 bp c D E e e1 HE Lp Q v w<br>max 1.1 0.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm nom 1.9 0.95 0.2 0.1<br>min 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>sot023_po<br>Outline References European Issue date<br>version IEC JEDEC JEITA projection<br>14-06-19<br>SOT23 TO-236AB<br>14-09-22<br>**----- End of picture text -----**<br> **Fig. 18. Package outline TO-236AB (SOT23)** BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** © NXP Semiconductors N.V. 2015. All rights reserved **==> picture [26 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> 11 / 16<br>**----- End of picture text -----**<br> **29 April 2015** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **13. Soldering** **==> picture [497 x 541] intentionally omitted <==** **----- Start of picture text -----**<br> 3.3<br>2.9<br>1.9<br>solder lands<br>solder resist<br>3 1.7 2<br>solder paste<br>0.7 0.6 occupied area<br>(3×) (3×)<br>Dimensions in mm<br>0.5<br>(3×)<br>0.6<br>(3×)<br>1 sot023_fr<br>Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)<br>2.2<br>1.2<br>(2×)<br>1.4<br>(2×)<br>solder lands<br>4.6 2.6 solder resist<br>occupied area<br>Dimensions in mm<br>1.4<br>preferred transport direction during soldering<br>2.8<br>4.5 sot023_fw<br>Fig. 20. Wave soldering footprint for TO-236AB (SOT23)<br>**----- End of picture text -----**<br> © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **12 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **14. Revision history** |**14. Revision history**|**14. Revision history**|||| |---|---|---|---|---| |**Table 8.**<br>**Revision history**||||| |**Data sheet ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |BSH205G2 v. 2|20150429|Product data sheet|-|BSH205G2 v.1| |Modifications:|•<br>AEC-Q101 qualified|||| |BSH205G2 v.1|20141215|Product data sheet|-|-| © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **13 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **15. Legal information** ## **15.1 Data sheet status** |**Document**<br>**status [1]**<br>**[2]**|**Product**<br>**status [3]**|**Definition**| |---|---|---| |Objective<br>[short] data<br>sheet|Development|This document contains data from<br>the objective specification for product<br>development.| |Preliminary<br>[short] data<br>sheet|Qualification|This document contains data from the<br>preliminary specification.| |Product<br>[short] data<br>sheet|Production|This document contains the product<br>specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **15.2 Definitions** **Preview** — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Draft** — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet** — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification** — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **15.3 Disclaimers** **Limited warranty and liability** — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. **Quick reference data** — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. **Applications** — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values** — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale** — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **14 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** **No offer to sell or license** — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control** — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. **Translations** — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. ## **15.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. **Bitsound** , **CoolFlux** , **CoReUse** , **DESFire** , **FabKey** , **GreenChip** , **HiPerSmart** , **HITAG** , **I²C-bus** logo, **ICODE** , **I-CODE** , **ITEC** , **MIFARE** , **MIFARE Plus** , **MIFARE Ultralight** , **SmartXA** , **STARplug** , **TOPFET** , **TrenchMOS** , **TriMedia** and **UCODE** — are trademarks of NXP Semiconductors N.V. **HD Radio** and **HD Radio** logo — are trademarks of iBiquity Digital Corporation. © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **15 / 16** **NXP Semiconductors** **BSH205G2** **20 V, P-channel Trench MOSFET** ## **16. Contents** |**16. **|**Contents**| |---|---| |**1**|**General description ............................................... 1**| |**2**|**Features and benefits ............................................1**| |**3**|**Applications ........................................................... 1**| |**4**|**Quick reference data ............................................. 1**| |**5**|**Pinning information ...............................................2**| |**6**|**Ordering information .............................................2**| |**7**|**Marking ...................................................................2**| |**8**|**Limiting values .......................................................3**| |**9**|**Thermal characteristics .........................................4**| |**10**|**Characteristics .......................................................6**| |**11**|**Test information .....................................................9**| |11.1|Quality information ............................................. 10| |**12**|**Package outline ................................................... 11**| |**13**|**Soldering .............................................................. 12**| |**14**|**Revision history ...................................................13**| |**15**|**Legal information .................................................14**| |15.1|Data sheet status ............................................... 14| |15.2|Definitions ...........................................................14| |15.3|Disclaimers .........................................................14| |15.4|Trademarks ........................................................ 15| ## **© NXP Semiconductors N.V. 2015. All rights reserved** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 29 April 2015** © NXP Semiconductors N.V. 2015. All rights reserved BSH205G2 All information provided in this document is subject to legal disclaimers. **Product data sheet** **29 April 2015** **16 / 16**
Updated at April 24, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
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