Image not available
Illustrative purposes only
BSH103,215
Power MOSFET, N Channel, 30 V, 850 mA, 0.4 ohm, TO-236AB, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NEXPERIA
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:850mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:400mV; Pow
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 750mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: TO-236AB
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 850mA
- Drain Source On State Resistance: 0.4ohm
- Gate Source Threshold Voltage Max: 400mV
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.113 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Important notice** Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename **Nexperia** . Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use **http://www.nexperia.com** Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use **salesaddresses@nexperia.com** (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - **© Nexperia B.V. (year). All rights reserved** . If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via **salesaddresses@nexperia.com** ). Thank you for your cooperation and understanding, Kind regards, Team Nexperia ## **DISCRETE SEMICONDUCTORS** ## **DATA SHEET** **==> picture [243 x 237] intentionally omitted <==** **----- Start of picture text -----**<br> andbook, halfpage<br>M3D088<br>**----- End of picture text -----**<br> ## **BSH103** N-channel enhancement mode MOS transistor Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 **Philips Semiconductors** **BSH103** ## **N-channel enhancement mode MOS transistor** ## **FEATURES** - Very low threshold - High-speed switching - No secondary breakdown - Direct interface to C-MOS, TTL etc. ## **PINNING - SOT23** |**PIN**|**SYMBOL**|**DESCRIPTION**| |---|---|---| |1|g|gate| |2|s|source| |3|d|drain| ## **APPLICATIONS** - Power management - DC to DC converters - Battery powered applications - ‘Glue-logic’; interface between logic blocks and/or periphery - General purpose switch. ## **DESCRIPTION** N-channel enhancement mode MOS transistor in a SOT23 SMD package. **==> picture [242 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, halfpage 3<br>d<br>g<br>s<br>1 2<br>Top view MAM273<br>Fig.1 Simplified outline and symbol.<br>**----- End of picture text -----**<br> ## **QUICK REFERENCE DATA** |**SYMBOL**|**PARAMETERS**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VDS|drain-source voltage (DC)||−|30|V| |VSD|source-drain diode forward voltage|VGD = 0; IS = 0.5 A|−|1|V| |VGS|gate-source voltage (DC)||−|±8|V| |VGSth|gate-source threshold voltage|VDS = VGS; ID = 1 mA|0.4|−|V| |ID|drain current (DC)|Ts= 80°C|−|0.85|A| |RDSon|drain-source on-state resistance|VGS = 2.5 V; ID = 0.5 A|−|0.5|Ω| |Ptot|total power dissipation|Ts= 80°C|−|0.5|W| ## **CAUTION** This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1998 Feb 11 2 Philips Semiconductors ## N-channel enhancement mode MOS transistor ## BSH103 ## **LIMITING VALUES** In accordance with the Absolute Maximum Rating System (IEC 134). |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**MAX.**|**UNIT**| |---|---|---|---|---|---| |VDS|drain-source voltage (DC)||−|30|V| |VGS|gate-source voltage (DC)||−|±8|V| |ID|drain current (DC)|Ts= 80°C; note 1|−|0.85|A| |IDM|peak drain current|note 2|−|3.4|A| |Ptot|total power dissipation|Ts= 80°C|−|0.5|W| |||Tamb= 25°C; note 3|−|0.75|W| |||Tamb= 25°C; note 4|−|0.54|W| |Tstg|storage temperature||−55|+150|°C| |Tj|operating junction temperature||−55|+150|°C| |**Source-drain diode**|||||| |IS|source current (DC)|Ts= 80°C|−|0.5|A| |ISM|peak pulsed source current|note 2|−|2|A| ## **Notes** 1. Ts is the temperature at the soldering point of the drain lead. 2. Pulse width and duty cycle limited by maximum junction temperature. 3. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. **==> picture [497 x 326] intentionally omitted <==** **----- Start of picture text -----**<br> MGM190 MBK502<br>0.6 10<br>handbook, halfpage handbook, halfpage<br>IDS<br>Ptot<br>(A)<br>(W) (2)<br>1<br>(1)<br>0.4<br>10 [−][1]<br>P δ [=] t p DC<br>0.2 T<br>10 [−][2]<br>t p t<br>T<br>0 10 [−][3]<br>0 40 80 120 Ts (°C) 160 10 [−][1] 1 10 VDS (V) 10 [2]<br>δ = 0.01; Ts = 80 °C.<br>(1) RDSon limitation.<br>(2) Pulsed.<br>Fig.2 Power derating curve. Fig.3 SOAR.<br>1998 Feb 11 3<br>**----- End of picture text -----**<br> Philips Semiconductors N-channel enhancement mode MOS transistor BSH103 ## **THERMAL CHARACTERISTICS** **==> picture [499 x 298] intentionally omitted <==** **----- Start of picture text -----**<br> SYMBOL PARAMETER VALUE UNIT<br>Rth j-s thermal resistance from junction to soldering point 140 K/W<br>MBK503<br>10 [3]<br>handbook, full pagewidth<br>Rth j-s<br>(K/W)<br>δ = 1<br>10 [2] 0.75<br>0.5<br>0.33<br>0.2<br>0.1<br>10 0.05 P δ = tpT<br>0.02<br>0.01 tp t<br>T<br>0<br>1<br>10 [−][6] 10 [−][5 ] 10 [−][4] 10 [−][3] 10 [−][2] 10 [−][1] 1<br>tp (s)<br>**----- End of picture text -----**<br> Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1998 Feb 11 4 Philips Semiconductors ## N-channel enhancement mode MOS transistor ## BSH103 ## **CHARACTERISTICS** Tj = 25 ° |**SYMBOL**|**PARAMETER**|**CONDITIONS**|**MIN.**|**TYP.**|**MAX.**|**UNIT**| |---|---|---|---|---|---|---| |V(BR)DSS|drain-source breakdown voltage|VGS = 0; ID = 10µA|30|−|−|V| |VGSth|gate-source threshold voltage|VGS = VDS; ID= 1 mA|0.4|−|−|V| |IDSS|drain-source leakage current|VGS = 0; VDS = 24 V|−|−|100|nA| |IGSS|gate leakage current|VGS =±8 V; VDS = 0|−|−|±100|nA| |RDSon|drain-source on-state resistance|VGS= 4.5 V; ID = 0.5 A|−|−|0.4|Ω| |||VGS= 2.5 V; ID = 0.5 A|−|−|0.5|Ω| |||VGS= 1.8 V; ID = 0.25 A|−|−|0.6|Ω| |Ciss|input capacitance|VGS= 0; VDS = 24 V; f = 1 MHz|−|83|−|pF| |Coss|output capacitance|VGS= 0; VDS = 24 V; f = 1 MHz|−|27|−|pF| |Crss|reverse transfer capacitance|VGS= 0; VDS = 24 V; f = 1 MHz|−|14|−|pF| |QG|total gate charge|VGS= 4.5 V; VDD = 15 V;<br>ID= 0.5 A; Tamb= 25°C|−|2100|−|pC| |QGS|gate-source charge|VDD = 15 V; ID= 0.5 A;<br>Tamb= 25°C|−|95|−|pC| |QGD|gate-drain charge|VDD = 15 V; ID= 0.5 A;<br>Tamb= 25°C|−|670|−|pC| |**Switching times**||||||| |td(on)|turn-on delay time|VGS= 0 to 8 V; VDD = 15 V;<br>ID= 0.5 A; Rgen= 6Ω|−|2.5|−|ns| |tf|fall time|VGS= 0 to 8 V; VDD = 15 V;<br>ID= 0.5 A; Rgen= 6Ω|−|3.5|−|ns| |ton|turn-on switching time|VGS= 0 to 8 V; VDD = 15 V;<br>ID= 0.5 A; Rgen= 6Ω|−|6|−|ns| |td(off)|turn-off delay time|VGS= 8 to 0 V; VDD = 15 V;<br>ID= 0.5 A; Rgen= 6Ω|−|20|−|ns| |tr|rise time|VGS= 8 to 0 V; VDD = 15 V;<br>ID= 0.5 A; Rgen= 6Ω|−|7|−|ns| |toff|turn-off switching time|VGS= 8 to 0 V; VDD = 15 V;<br>ID= 0.5 A; Rgen= 6Ω|−|27|−|ns| |**Source-drain diode**||||||| |VSD|source-drain diode forward<br>voltage|VGD= 0; IS = 0.5 A|−|−|1|V| |trr|reverse recovery time|IS = 0.5 A; di/dt =−100 A/µs|−|25|−|ns| 1998 Feb 11 5 Philips Semiconductors ## N-channel enhancement mode MOS transistor ## BSH103 **==> picture [493 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> handbook, full pagewidth<br>VDD 90 %<br>Vin<br>RL<br>10 %<br>0<br>Vout<br>90 %<br>Vin Vout<br>10 %<br>0<br>td(on) td(off)<br>tf tr<br>MAM274 ton toff<br>**----- End of picture text -----**<br> Fig.5 Switching times test circuit with input and output waveforms. **==> picture [242 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> MBK507<br>5 16<br>handbook, halfpage V DS<br>VGS<br>(V)<br>(V) 14<br>4<br>12<br>10<br>3<br>8<br>(1) (2)<br>2<br>6<br>4<br>1<br>2<br>0 0<br>QG (pC)<br>VDD = 15 V; ID = 0.5 A; Tamb = 25 °C.<br>(1) VDS.<br>(2) VGS.<br>0 200 400 600 800 1000 1000 1600 1800 1800 2000 2200<br>**----- End of picture text -----**<br> **==> picture [216 x 32] intentionally omitted <==** **----- Start of picture text -----**<br> Fig.6 Gate-source and drain-source voltages as<br>functions of total gate charge; typical values.<br>**----- End of picture text -----**<br> **==> picture [242 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> MBK505<br>4<br>handbook, halfpage(1)(2) (3)(4) (5)<br>ID<br>(A) (6)<br>3<br>2 (7)<br>1<br>(8)<br>(9)<br>0<br>0 2 4 6 8 10<br>VDS (V)<br>Tamb = 25 °C; tp = 300 µs; δ = 0. (5) VGS = 3 V.<br>(1) VGS = 7.5 V. (6) VGS = 2.5 V.<br>(2) VGS = 5.5 V. (7) VGS = 2 V.<br>(3) VGS = 4.5 V. (8) VGS = 1.5 V.<br>(4) VGS = 3.5 V. (9) VGS = 1 V.<br>**----- End of picture text -----**<br> Fig.7 Output characteristics; typical values. 1998 Feb 11 6 Philips Semiconductors ## N-channel enhancement mode MOS transistor **==> picture [242 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> MBK506<br>4<br>handbook, halfpage<br>ID<br>(A)<br>3<br>2<br>1<br>0<br>0 1 2 3<br>VGS (V)<br>**----- End of picture text -----**<br> ## BSH103 **==> picture [242 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> MBK504<br>300<br>handbook, halfpage<br>C<br>(pF)<br>200<br>100<br>Ciss<br>Coss<br>Crss<br>0<br>0 10 20 30<br>VDS (V)<br>**----- End of picture text -----**<br> **==> picture [185 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> VGS = 0 ; f = 1 MHz; Tamb = 25 °C.<br>**----- End of picture text -----**<br> **==> picture [185 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> VDS = 10 V; Tamb = 25 °C; tp = 300 µs; δ = 0.<br>**----- End of picture text -----**<br> Fig.8 Transfer characteristic; typical values. **==> picture [242 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> MBK508<br>2<br>handbook, halfpage<br>IS<br>(A)<br>1.6<br>1.2<br>0.8<br>(1) (2) (3)<br>0.4<br>0<br>0 0.4 0.8 1.2<br>VSD (V)<br>VGD = 0.<br>(1) Tamb = 150 °C.<br>(2) Tamb = 25 °C.<br>(3) Tamb = −65 °C.<br>**----- End of picture text -----**<br> Fig.10 Source current as a function of source-drain diode forward voltage; typical values. Fig.9 Capacitance as a function of drain-source voltage; typical values. **==> picture [242 x 305] intentionally omitted <==** **----- Start of picture text -----**<br> MBK509<br>10<br>handbook, halfpage<br>RDSon<br>(Ω)<br>(1) (2) (3) (4)<br>(5) (6)<br>1<br>10 [−][1]<br>0 2 4 6 8 10<br>VGS (V)<br>Tamb = 25 °C; tp = 300 µs; δ = 0.<br>(1) ID = 0.1 A. (4) ID = 0.9 A.<br>(2) ID = 0.22 A. (5) ID = 1.8 A.<br>(3) ID = 0.45 A. (6) ID = 3.6 A.<br>Fig.11 Drain-source on-state resistance as a function<br>of gate-source voltage; typical values.<br>**----- End of picture text -----**<br> 1998 Feb 11 7 Philips Semiconductors ## N-channel enhancement mode MOS transistor **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MBK510<br>1.2<br>handbook, halfpage<br>k<br>0.8<br>0.4<br>0<br>−65 −15 35 85 135 185<br>Tj (°C)<br>k = V--------------------------------------GSthVGSthat 25at T°jC . VGSth at VDS = VGS; ID = 1 mA.<br>Fig.12 Temperature coefficient of gate-source<br>threshold voltage as a function of junction<br>temperature; typical values.<br>**----- End of picture text -----**<br> ## BSH103 **==> picture [242 x 306] intentionally omitted <==** **----- Start of picture text -----**<br> MBK511<br>1.6<br>handbook, halfpage<br>(1)<br>k<br>(2)<br>1.2<br>0.8<br>0.4<br>0<br>−65 −15 35 85 135 185<br>Tj (°C)<br>k = R-----------------------------------------DSonRDSonat 25at T°j C . (2)(1) RRDSonDSon at V at VGSGS = 4.5 V; I = 2.5 V; IDD = 0.5 mA. = 0.5 mA.<br>Fig.13 Temperature coefficient of drain-source<br>on-resistance as a function of junction<br>temperature; typical values.<br>**----- End of picture text -----**<br> 1998 Feb 11 8 Philips Semiconductors BSH103 N-channel enhancement mode MOS transistor ## **PACKAGE OUTLINE** **Plastic surface mounted package; 3 leads** **==> picture [31 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SOT23<br>**----- End of picture text -----**<br> **==> picture [494 x 589] intentionally omitted <==** **----- Start of picture text -----**<br> D B E A X<br>HE v M A<br>3<br>Q<br>A<br>A1<br>1 2 c<br>e1 bp w M B Lp<br>e<br>detail X<br>0 1 2 mm<br>scale<br>DIMENSIONS (mm are the original dimensions)<br>UNIT A max.A1 bp c D E e e1 HE Lp Q v w<br>1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55<br>mm 0.1 1.9 0.95 0.2 0.1<br>0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC EIAJ PROJECTION<br> SOT23 97-02-28<br>**----- End of picture text -----**<br> 1998 Feb 11 9 Philips Semiconductors ## N-channel enhancement mode MOS transistor BSH103 ## **DEFINITIONS** |**DEFINITIONS**|| |---|---| |**Data Sheet Status**|| |Objective specifcation|This data sheet contains target or goal specifcations for product development.| |Preliminary specifcation|This data sheet contains preliminary data; supplementary data may be published later.| |Product specifcation|This data sheet contains fnal product specifcations.| |**Limiting values**|| Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. ## **Application information** ## **LIFE SUPPORT APPLICATIONS** These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Feb 11 10 Philips Semiconductors N-channel enhancement mode MOS transistor BSH103 ## **NOTES** 1998 Feb 11 11 ## **Philips Semiconductors – a worldwide company** **Argentina:** see South America **Australia:** 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 **Austria:** Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 **Belarus:** Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 **Belgium:** see The Netherlands **Brazil:** see South America **Bulgaria:** Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 **Canada:** PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 **China/Hong Kong:** 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 **Colombia:** see South America ## **Czech Republic:** see Austria **Denmark:** Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 **Finland:** Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 **France:** 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 **Germany:** Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 **Greece:** No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 **Hungary:** see Austria **India:** Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 **Indonesia:** see Singapore **Ireland:** Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 **Israel:** RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 **Italy:** PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 **Japan:** Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 **Korea:** Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 **Malaysia:** No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 **Mexico:** 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 **Netherlands:** Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 **New Zealand:** 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 **Norway:** Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 **Philippines:** Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 **Poland:** Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 **Portugal:** see Spain **Romania:** see Italy **Russia:** Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 **Singapore:** Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 **Slovakia:** see Austria **Slovenia:** see Italy **South Africa:** S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 **South America:** Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 **Spain:** Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 **Sweden:** Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 **Switzerland:** Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 488 3263 **Taiwan:** Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 **Thailand:** PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 **Turkey:** Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 **Ukraine** : PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 **United Kingdom:** Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 **United States:** 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 **Uruguay:** see South America **Vietnam:** see Singapore **Yugoslavia:** PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 **Middle East:** see Italy **For all other countries apply to:** Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 ## © Philips Electronics N.V. 1998 **Internet:** http://www.semiconductors.philips.com SCA57 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands **==> picture [204 x 36] intentionally omitted <==** Date of release: 1998 Feb 11 135108/00/04/pp12 Document order number: 9397 750 03303
Updated at April 24, 2026
Nexperia is a dedicated global leader in discretes, logic, and MOSFET devices. Built on over half a century of semiconductor expertise and operating independently since 2017, the company produces consistently reliable components at an exceptional volume of 85 billion units annually. With its own manufacturing facilities, Nexperia delivers industry-leading small packages that combine power and thermal efficiency with best-in-class quality, meeting the rigorous standards of the automotive sector. Our extensive Nexperia portfolio is heavily focused on discrete semiconductors, providing engineers with a robust selection of core building blocks. This includes a comprehensive range of diodes and rectifiers, featuring a vast selection of Zener single diodes and Schottky diodes designed for precise voltage regulation and efficient power routing. Additionally, we offer an expansive array of bipolar transistors and single MOSFETs tailored for reliable switching and amplification in demanding applications. Beyond these primary offerings, the lineup extends into specialized circuit protection and passive components. This includes transient voltage suppressor (TVS) diodes, Zener array diodes, and small signal diodes, alongside dual MOSFETs and fast recovery rectifiers. For comprehensive design needs, the selection also encompasses integrated passive filters, common mode chokes, and precision timers and oscillators, ensuring a complete solution for high-performance electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →