BSF030NE2LQXUMA1

## n-Channel Power MOSFET 

OptiMOS™ BSF030NE2LQ 

## Data Sheet 

2.3, 2011-09-19 Final 

Industrial & Multimarket 

**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

## **1 Description** 

OptiMOS™25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. 

## **Features** 

- Optimized for high performance buck converters 

- 100% avalanche tested 

- Low parasitic inductance 

- Qualified according to JEDEC[1)] for target applications 

- Low profile (<0.7 mm) 

- Pb-free plating; RoHS compliant 

- Halogen-free according to IEC61249-2-21 

- Double-sided cooling 

- Compatible with DirectFET® package SQ footprint and outline 

- 100% Rg Tested 

## **Applications** 

- On board power for server 

- Power managment for high performance computing 

- Synchronous rectification 

- High power density point of load converters 

**Table 1 Key Performance Parameters** 

**Parameter Value Unit Related Links** ~~a es~~ _V_ DS 25 V IFX OptiMOS webpage ~~es~~ RDS(on),max 3 mΩ IFX OptiMOS product brief ~~es~~ _I_ D 75 A IFX OptiMOS spice models QOSS 13 nC IFX Design tools Q ~~|~~ g.typ 23 **Type Package Marking** BSF030NE2LQ MG-WDSON-2 03E2 ~~ee~~ 

1) J-STD20 and JESD22 

Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**==> picture [131 x 63] intentionally omitted <==**

## **2 Maximum ratings** 

at _T_ j = 25 °C, unless otherwise specified. 

## **Table 2 Maximum ratings** 

|**Table 2**<br>**Maximum ratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-|-|75|A|_V_GS=10 V,_T_C=25 °C|
|||-|-|47||_V_GS=10 V,_T_C=100 °C|
|||-|-|24||_V_GS=10 V,_T_A=25 °C,<br>_R_thJA=45 K/W1))|
|Pulsed drain current2)|_I_D,pulse|-|-|300||_T_C=25 °C|
|Avalanche current, single pulse3)|_I_AS|-|-|40|||
|Avalanche energy, single pulse|_E_AS|-|-|50|mJ|_I_D=35 A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V||
|Power dissipation|_P_tot|-|-|28|W|_T_C=25 °C|
|||-|-|2.2||_T_A=25 °C,_R_thJA=58 K/W|
|Operating and storage temperature|_T_j,_T_stg|-40|-|150|°C||
|IEC climatic category; DIN IEC 68-1||-|||||



1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm[2] (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

- 2) See figure 3 for more detailed information 

- 3) See figure 13 for more detailed information 

## **3 Thermal characteristics** 

## **Table 3 Thermal characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case|_R_thJC|-|1.0|-|K/W|bottom|
|||-|-|4.5||top|
|Device on PCB|_R_thJA|-|-|58||6 cm2cooling area1)|



1) See figure 13 for more detailed information 

Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**==> picture [131 x 63] intentionally omitted <==**

**Electrical characteristics** 

## **4 Electrical characteristics** 

Electrical characteristics, at _T_ j=25 °C, unless otherwise specified. 

## **Table 4 Static characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|25|-|-|V|_V_GS=0 V,_I_D=1.0 mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2||_V_DS=_V_GS,_I_D=250 µA|
|Zero gate voltage drain current|_I_DSS|-|0.1|10|µA|_V_DS=25 V,_V_GS=0 V,<br>_T_j=25 °C|
|||-|10|100||_V_DS=25 V,_V_GS=0 V,<br>_T_j=125 °C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20 V,_V_DS=0 V|
|Drain-source on-state resistance|_R_DS(on)|-|3.3|4.1|mΩ|_V_GS=4.5 V,_I_D=30A|
|||-|2.5|3||_V_GS=10 V,_I_D=30 A|
|Gate resistance|_R_G|-|0.6|-|Ω||
|Transconductance|_g_fs|55|110|-|S||_V_DS|>2|_I_D|RDS(on)max,<br>_I_D=30 A|



## **Table 5 Dynamic characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1700|-|pF|_V_GS=0 V,_V_DS=12 V,<br>_f_=1 MHz|
|Output capacitance|_C_oss|-|660|-|||
|Reverse transfer capacitance|_C_rss|-|72|-|||
|Turn-on delay time|_t_d(on)|-|2.8|-|ns|_V_DD=12V,_V_GS=10 V,<br>_I_D=30 A,_R_G= 1.6Ω|
|Rise time|_t_r|-|3.4|-|||
|Turn-off delay time|_t_d(off)|-|18|-|||
|Fall time|_t_f|-|2.6|-|||



Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**==> picture [131 x 63] intentionally omitted <==**

**Electrical characteristics** 

## **Table 6 Gate charge characteristics[1)]** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|4.4|-|nC|_V_DD=12 V,<br>_I_D=30 A,<br>_V_GS=0 to 4.5 V|
|Gate charge at threshold|_Q_g(th)|-|2.7|-|||
|Gate to drain charge|_Q_gd|-|2.7|-|||
|Switching charge|_Q_sw|-|4.3|-|||
|Gate charge total|_Q_g|-|11.3|-|||
|Gate plateau voltage|_V_plateau|-|2.6|-|V||
|Gate charge total|_Q_g|-|23|-|nC|_V_DD=12 V,<br>_I_D=30 A,<br>_V_GS=0 to 10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|9.8|-||_V_DS=0.1 V,<br>_V_GS=0 to 4.5 V|
|Output charge|_Q_oss|-|13|-||_V_DD=12 V,_V_GS=0 V|



1) See figure 16 for gate charge parameter definition 

## **Table 7 Reverse diode characteristics** 

|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note /**<br>**Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_s|-|-|28|A|_T_C=25 °C|
|Diode pulse current|_I_S,pulse|-|-|112|||
|Diode forward voltage|_V_SD|-|0.86|1|V|_V_GS=0 V,_I_F=30 A,<br>_T_j=25 °C|
|Reverse recovery charge|_Q_rr|-|10|-|nC|_V_R=15 V,_I_F=_I_s,<br>d_i_F/d_t_=400 A/µs|



Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**5 Electrical characteristics diagrams** 

## **Electrical characteristics diagrams** 

## **Table 8** 

## **1 Power dissipation** 

**==> picture [50 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
 P tot = f( T C)<br>**----- End of picture text -----**<br>


## **2 Drain current** 

_ID=f(TC);_ parameter _:V_ GS 

## **Table 9** 

## **3 Safe operating area** _**T**_ **C=25 °C** 

_I_ D=f( _V_ DS); _T_ C=25 °C; D=0; parameter: _T_ p 

**==> picture [178 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
 4 Max. transient thermal impedance<br>10'<br>a<br>0s 4<br>f<br>bill Bi [Y]<br>40° 50.2% 4<br>x Yf<br>8 0.05 |<br>N<br>0.02<br>10" mee ment Bett!<br>0.07<br>single pulse<br>107<br>10° 10% = 10% 10% 10<br>tp [s]<br> Z (thJC)=f( t p); parameter: D= t p/ T<br>**----- End of picture text -----**<br>


Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**Electrical characteristics diagrams** 

**Table 10** 

> **5 Typ. output characteristics** _**T**_ **C=25 °C** 

_I_ D=f( _V_ DS); _T_ j=25 °C; parameter: _V_ GS 

## **6 Typ. drain-source on-state resistance** 

_R_ DS(on)=f( _I_ D); _T_ j=25 °C; parameter: _V_ GS 

## **Table 11** 

## **7 Typ. transfer characteristics** 

_I_ D=f(VGS); | _V_ DS|>2| _I_ D| _R_ DS(on)max 

**8 Typ. forward transconductance** 

**==> picture [81 x 13] intentionally omitted <==**

**----- Start of picture text -----**<br>
 g fs=f( I D);  Tj =25 °C<br>**----- End of picture text -----**<br>


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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

## **Electrical characteristics diagrams** 

## **Table 12** 

## **9 Drain-source on-state resistance** 

RDS(on)=f( _T_ j); _I_ D=30 A; _V_ GS=10 V 

## **10 Typ. gate threshold voltage** 

**==> picture [148 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
V GS(th)=f( T j);  V GS= V DS;  I D=250 µA<br>**----- End of picture text -----**<br>


**Table 13** 

**==> picture [457 x 284] intentionally omitted <==**

**----- Start of picture text -----**<br>
11 Typ. capacitances 12 Forward characteristics of reverse diode<br>107 100<br>10 aan<br>3 NIT CissCass<br>6 x 10<br>a<br>oO uw<br>|40°2 iaaaa 1 '<br>0 5 10 15 20 25 0.0 0.5 1.0 15<br>Vos [V] Vso [V]<br>C=f( V DS);  V GS=0 V;  f =1 MHz  I F=f( V SD); parameter:  T j<br>**----- End of picture text -----**<br>


## **11 Typ. capacitances** 

Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**Electrical characteristics diagrams** 

**Table 14** 

## **13 Avalanche characteristics** 

_I_ AS=f( _t_ AV); _R_ GS=25 Ω; parameter: _T_ j(start) 

## **14 Typ. gate charge** 

_V_ GS=f( _Q_ gate); _I_ D=30 A pulsed; parameter: _V_ DD 

## **Table 15** 

## **15 Drain-source breakdown voltage** 

## **16 Gate charge waveforms** 

**==> picture [104 x 12] intentionally omitted <==**

**----- Start of picture text -----**<br>
 V BR(DSS)=f( T j);  I D=1 mA<br>**----- End of picture text -----**<br>


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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**6** 

## **Package outlines** 

## **Package outlines** 

**Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches** 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

**7** 

## **Package outlines** 

## **Package outlines** 

**Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches** 

Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

## **Package outlines** 

## **8 Package outlines** 

**Figure 3 Outlines MG-WDSON-2, dimensions in mm/inches. Recommended stencil thickness 150µm** 

**9 Marking Layout** 

Final Data Sheet 

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**OptiMOS™ Power-MOSFET BSF030NE2LQ** 

## **Revision History** 

## **9 Revision History** 

## **Revision History: 2011-09-19, 2.3** 

## **Previous Revision:** 

|**Revision**||**Subjects (major changes since last revision)**|
|---|---|---|
|0.4|Release of target data sheet||
|2.0|Release Final version||
|2.2|DirectFET Disclaimer expired||
|2.3||Update VGSth|



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Edition 2011-09-19 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

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## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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