BSDL10S65E6

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SDL10S<br>65E6<br>&<br>*RoHS COMPLIANT<br>**HALOGEN FREE<br>**----- End of picture text -----**<br>


## **Features** 

- n High efficiency with low power loss 

- n Low reverse leakage current 

- n High peak forward surge current capability 

- IFSM 

- n Reduced EMI 

- n Maximum operating TJ up to 175 °C 

- n Epoxy compound is flame retardant to the 94V-0 standard 

- n RoHS compliant*, Pb free and halogen free** 

## **Applications** 

- n Switched-Mode Power Supplies (SMPS) n Power Factor Correction (PFC) 

- n PV inverters 

- n DC-DC converters 

- n Telecommunications 

- n Motor drives 

## **BSDL10S65E6 Silicon Carbide Schottky Diode** 

## ~~**General Information**~~ 

## ~~**Additional Information**~~ 

Bourns[®] Model BSDL10S65E6 Silicon Carbide (SiC) Schottky Diode provides excellent current carrying capacity. This advanced, high efficiency power component is suitable for applications such as converters requiring a high peak forward surge capability, low forward voltage drop, reduced thermal resistance and low power loss. 

Click these links for more information: 

PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT 

Bourns offers Silicon Carbide Schottky Diodes for rectification applications in assorted styles. SELECTOR LIBRARY The Model BSDL10S65E6 is available in a DFN8x8 package, well-suited for high frequency Switched-Mode Power Supplies. 

~~**Absolute Maximum Ratings (@ TJ = 25 °C Unless Otherwise Noted)** a~~ **Parameter Symbol BSDL10S65E6 Unit** ~~a~~ Repetitive Peak Reverse Voltage VRRM 650 V Average Forward Current ~~a~~ (Square Wave Pulse, D = 0.5, Tc ≤153 °C, Fig. Zth(J-c)) IF(AV) 10 A Repetitive Peak Forward Current IFRM 20 A ~~ee~~ (Square Wave Pulse, D = 0.5, Tc ≤153 °C, tp = 25 µs, Fig. Zth(J-c)) Non-Repetitive Peak Forward Surge Current ~~a~~ (10 ms, Single Sine-Wave Pulse) IFSM 75 A ~~a~~ Total Power Dissipation Ptot 157.8 W ~~a~~ Operating Junction Temperature Range TJ -55 to +175 °C ~~a~~ Storage Temperature TSTG -55 to +175 °C 

|**Parameter**|**Parameter**|**Symbol**|**Condition or Model**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|Thermal<br>Resistance|Junction to Ambient|Rθ(J-A)|In ambient air||60||°C/W|
||Junction to Case|Rθ(J-c)|Transient thermal impedance curves||0.7|0.95||



## ~~**Electrical Characteristics (@ TJ = 25 °C Unless Otherwise Noted)**~~ 

|**Parameter**|**Symbol**|**Condition or Model**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Forward Voltage|VF|IF= 10 A, TJ= 25 °C<br>IF= 10 A, TJ= 175 °C||1.29<br>1.5|1.45<br>1.7|V|
|Reverse Leakage Current|IR|VR= 650 V, TJ= 25 °C<br>VR= 650 V, TJ= 175 °C||1<br>15|50<br>200|µA|
|Recovered Charge|Qr|dIF/dt = 500 A/µs, VR= 400 V, IF= 10 A||24||nC|
|Diode Capacitance|Cd|VR= 1 V, f = 1 MHz||500||pF|
|Capacitance Stored Energy|Ec|VR= 400 V||4.9||µJ|



## **WARNING  Cancer and Reproductive Harm -** www.P65Warnings.ca.gov 

*RoHS Directive 2015/863, Mar 31, 2015 and Annex. 

- ** Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. 

Specifications are subject to change without notice. 

Users should verify actual device performance in their specific applications. 

The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDL10S65E6 Silicon Carbide Schottky Diode** 

## ~~**Rating and Characteristic Curves (TJ = 25 °C unless otherwise noted)**~~ 

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Typical Reverse Characteristics<br>**----- End of picture text -----**<br>


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Typical Forward Characteristics Typical Reverse Characteristics<br>20 10 [2]<br>TJ = -55 °C<br>TJ = 0 °C 10<br>16 TJ = 25 °C<br>T J  = 100 °C 1<br>TJ = 150 °C<br>12 T J  = 175 °C 10 [-1]<br>10 [-2]<br>8<br>TJ = -55 °C<br>10 [-3] TJ = 0  ° C<br>TJ = 25 °C<br>4<br>10 [-4] TT J J = 100 °C = 150 °C<br>TJ = 175 °C<br>0 10 [-5]<br>0 0.5 1.0 1.5 2.0 2.5 3.0 150 250 350 450 550 650<br>Forward Voltage (V) Reverse Voltage (V)<br>Forward Power Dissipation Forward Current Derating<br>30 150<br>D = 0.1<br>D = 1<br>25<br>D = 0.5 120<br>D = 0.2<br>20 D = 0.1 D = 0.2<br>90<br>15<br>D = 0.5<br>60<br>10<br>D = 1<br>30<br>5<br>0 0<br>0 3 6 9 12 15 25 75 125 175<br>Average Forward Current (A) Case Temperature (°C)<br>Forward Current (A)<br>Reverse Leakage Current (µA)<br>Peak Forward Current (A)<br>Total Power Dissipation (W)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDL10S65E6 Silicon Carbide Schottky Diode** 

## ~~**Rating and Characteristic Curves (Continued)**~~ 

## ~~**Power Derating**~~ 

## ~~**Typical Recovered Charge vs VR**~~ 

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250 25<br>Rth(J-c) typ.<br>Rth(J-c) max.<br>200 20<br>150 15<br>100 10<br>50 5<br>0 0<br>25 50 75 100 125 150 175 0 100 200 300 400<br>Case Temperature (°C) Reverse Voltage (V)<br>Typical Diode Capacitance vs VR Typical Capacitance Stored Energy vs VR<br>700 12<br>600<br>10<br>500<br>8<br>400<br>6<br>300<br>4<br>200<br>2<br>100<br>Vr<br>Ec ∫0  Cd(V)VdV<br>0 7 0<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 100 200 300 400 500 600<br>Reverse Voltage (V) Reverse Voltage (V)<br>Specifications are subject to change without notice.<br>Users should verify actual device performance in their specific applications.<br>The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.<br>Recovered Charge (nC)<br>Total Power Dissipation (W)<br>Diode Capacitance (pF)<br>Capacitance Stored Energy (µJ)<br>**----- End of picture text -----**<br>


## **BSDL10S65E6 Silicon Carbide Schottky Diode** 

## ~~**Transient Thermal Impedance, Zth(J-c)**~~ 

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10<br>1<br>10 [-1]<br>10 [-2]<br>P D = tp<br>T<br>D = 0.5<br>D = 0.1<br>10 [-3]<br>D = 0.05<br>D = 0.01 tp t<br>single pulse T<br>10 [-4]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Pulse Duration (s)<br>Transient Thermal Impedance (°C/W)<br>**----- End of picture text -----**<br>


## ~~**Product Dimensions**~~ 

Package: DFN8X8 

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7.90 - 8.10 7.10 - 7.30<br>(.311 - .319) (.280 - .287)<br>4.25 - 4.45<br>(.167 - .175)<br>7.90 - 8.10<br>(.311 - .319)<br>2.65 - 2.85<br>(.104 - .112)<br>PIN 1<br>0.40 - 0.60 2.00 0.90 - 1.10<br>(.016 - .024) (.079) (.035 - .043)<br>BSC<br>TOP VIEW SIDE VIEW BOTTOM VIEW<br>0.80 - 0.90<br>(.031 - .035)<br>MM<br>DIMENSIONS:<br>(INCHES)<br>(.008)0.20 [REF.] (0 - .002)0 - 0.05<br>SIDE VIEW<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDL10S65E6 Silicon Carbide Schottky Diode** 

## ~~**Typical Part Marking**~~ 

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MANUFACTURER’S<br>TRADEMARK<br>DEVICE CODE<br>SDL10S<br>65E6<br>***YYWW***<br>XXXX<br>LOT ID DATE CODE<br>1ST~3RD CHARACTERS INDICATE<br>INTERNAL PRODUCTION CODE<br>4TH~5TH CHARACTERS INDICATE<br>YEAR<br>6TH~7TH CHARACTERS INDICATE<br>WEEK<br>8TH~10TH CHARACTERS INDICATE<br>INTERNAL SERIAL NO.<br>**----- End of picture text -----**<br>


## ~~**Environmental Specifications**~~ 

## ~~**Pin Information**~~ 

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5<br>1 2 3 4<br>5(mb) 3,4<br>Cathode Anode<br>1,2: N.C. (Not Connected)<br>**----- End of picture text -----**<br>


ESD Classification (HBM)...............................................................3B 

## ~~**Recommended Footprint**~~ 

## ~~**How to Order**~~ 

Manufacturer B = Bourns Product Type SD = SiC Diodes Package Code L = DFN8x8 Current Rating 10 = 10 A Device Type S = Low VF Nominal Voltage 65 = 650 V Configuration E = Single Diode Version Number 

## **B  SD  L  10  S  65  E  6** 

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7.20<br>(.283)<br>7.80<br>(.307) 4.35<br>(.171)<br>3.75<br>(.148)<br>2.55<br>(.100)<br>0.90<br>(.035)<br>2.00 1.20<br>(.079) (.047)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDL10S65E6 Silicon Carbide Schottky Diode** 

## ~~**Packaging Specifications**~~ 

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21.2<br>(.835)<br>2.0 ± 0.5<br>(.079 ± .020) 13 COVER TAPE<br>(.512) 0.10<br>330 DIA. 100 (.004)<br>(13) (3.937) DIA. MAX.<br>THICKNESS<br>20.5<br>(.807)<br>EMBOSSED CARRIER<br>16.4 16<br>(.646) (.630)<br>1.75 4 12 2 1.5 1.2<br>(.069) (.157) (.472) (.079) (.059)  [DIA. MIN.] (.047)<br>16<br>(.630)<br>7.5<br>(.295)<br>2<br>DIA.<br>(.079)<br>MM USER DIRECTION OF FEED<br>DIMENSIONS:<br>(INCHES) QTY: 3,000 PCS PER REEL<br>**----- End of picture text -----**<br>


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REV. 06/23 

Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

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