BSDH10G120E2

- n RoHS compliant*, Pb free and halogen free** 

## **Features** 

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n  High efficiency with low power loss free**<br>n  Low reverse leakage current Applications<br>n  High peak forward surge current capability  n  Switched-Mode Power Supplies (SMPS)<br>IFSM n  Power Factor Correction (PFC)<br>n  Reduced EMI n  PV inverters<br>n  Maximum operating TJ up to 175 °C n  DC-DC converters<br>n  Epoxy compound is flame retardant to the  n  Telecommunications<br>94V-0 standard n  Motor drives<br>BOURNS  is BSDH10G120E2 Silicon Carbide Schottky Diode<br>&<br>*RoHS COMPLIANT<br>**HALOGEN FREE<br>SDH10G 120E2<br>**----- End of picture text -----**<br>


## ~~**General Information**~~ 

## ~~**Additional Information**~~ 

Bourns[®] Model BSDH10G120E2 Silicon Carbide (SiC) Schottky Diode provides excellent current carrying capacity. This advanced, high efficiency power component is suitable for applications such as converters requiring a high peak forward surge capability, low forward voltage drop, reduced thermal resistance and low power loss. 

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PRODUCT TECHNICAL INVENTORY SAMPLES CONTACT 

Bourns offers Silicon Carbide Schottky Diodes for rectification applications in assorted SELECTOR LIBRARY styles. The Model BSDH10G120E2 is available in a TO220-2 package, well-suited for high frequency Switched-Mode Power Supplies. 

~~**Absolute Maximum Ratings (@ TJ = 25 °C Unless Otherwise Noted)**~~ 

~~DO~~ **Parameter Symbol** ~~(~~ **BSDH10G120E2 Unit** ~~CG~~ Repetitive Peak Reverse Voltage VRRM 1200 V Average Forward Current (Square Wave Pulse, D = 0.5, Tmb ≤146 °C, Fig. Zth(J-mb)) IF(AV) 10 A ~~ee ee ee~~ Repetitive Peak Forward Current IFRM 20 A (Square Wave Pulse, D = 0.5, Tmb ≤146 °C, tp = 25 µs, Fig. Zth(J-mb)) ~~ee ee ee~~ Non-Repetitive Peak Forward Surge Current (10 ms, Single Sine-Wave Pulse) IFSM 80 A ~~ee ee ee a~~ Total Power Dissipation Ptot 176.4 W ~~a~~ Operating Junction Temperature Range TJ -55 to +175 °C ~~OG~~ Storage Temperature TSTG -55 to +175 °C ~~**Thermal Characteristics**~~ **Parameter Symbol Condition or Model Min. Typ. Max. Unit** Thermal Junction to Ambient Rθ(J-A) In ambient air 40 °C/W Resistance Junction to Mounting Base Rθ(J-mb) Transient thermal impedance curves 0.65 0.85 

## ~~**Electrical Characteristics (@ TJ = 25 °C Unless Otherwise Noted)**~~ 

|**Parameter**|**Symbol**|**Condition or Model**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Forward Voltage|VF|IF= 10 A, TJ= 25 °C<br>IF= 10 A, TJ= 175 °C||1.42<br>2.0|1.6<br>2.5|V|
|Reverse Leakage Current|IR|VR= 1200 V, TJ= 25 °C<br>VR= 1200 V, TJ= 175 °C||1<br>25|50<br>500|µA|
|Recovered Charge|Qr|dIF/dt = 500 A/µs, VR= 400 V, IF= 10 A||22||nC|
|Diode Capacitance|Cd|VR= 1 V, f = 1 MHz||481||pF|
|Capacitance Stored Energy|Ec|VR= 800 V||13||µJ|



## **WARNING  Cancer and Reproductive Harm -** www.P65Warnings.ca.gov 

*RoHS Directive 2015/863, Mar 31, 2015 and Annex. 

- ** Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. 

Specifications are subject to change without notice. 

Users should verify actual device performance in their specific applications. 

The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDH10G120E2 Silicon Carbide Schottky Diode** 

## ~~**Rating and Characteristic Curves (TJ = 25 °C unless otherwise noted)**~~ 

## ~~**Typical Forward Characteristics**~~ 

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20<br>TJ = -55 °C<br>TJ = 0 °C<br>TJ = 25 °C<br>15<br>TJ = 100 °C<br>TJ = 150 °C<br>TJ = 175 °C<br>10<br>5<br>0<br>0 1 2 3 4<br>Forward Voltage (V)<br>Forward Power Dissipation<br>45<br>D = 1<br>36 D = 0.5<br>D = 0.2<br>D = 0.1<br>27<br>18<br>9<br>0<br>0 3 6 9 12 15<br>Average Forward Current (A)<br>Forward Current (A)<br>Total Power Dissipation (W)<br>**----- End of picture text -----**<br>


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Typical Reverse Characteristics<br>**----- End of picture text -----**<br>


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10 [2]<br>10<br>1<br>10 [-1]<br>10 [-2]<br>TJ = -55 °C<br>10 [-3] TJ = 0  ° C<br>TJ = 25 °C<br>10 [-4] TT J J = 100 °C = 150 °C<br>TJ = 175 °C<br>10 [-5]<br>100 300 500 700 900 1100 1200<br>Reverse Voltage (V)<br>Forward Current Derating<br>150<br>120 D = 0.1<br>90<br>D = 0.2<br>60<br>D = 0.5<br>D = 1<br>30<br>0<br>25 75 125 175<br>Mounting Base Temperature (°C)<br>Reverse Leakage Current (µA)<br>Peak Forward Current (A)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDH10G120E2 Silicon Carbide Schottky Diode** 

## ~~**Rating and Characteristic Curves (Continued)**~~ 

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Power Derating<br>**----- End of picture text -----**<br>


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250<br>Rth(J-mb) typ.<br>Rth(J-mb) max.<br>200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150 175<br>Mounting Base Temperature (°C)<br>Total Power Dissipation (W)<br>**----- End of picture text -----**<br>


## ~~**Typical Diode Capacitance vs VR**~~ 

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700<br>600<br>500<br>400<br>300<br>200<br>100<br>0 Hl<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>Reverse Voltage (V)<br>Diode Capacitance (pF)<br>**----- End of picture text -----**<br>


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Typical Recovered Charge vs VR<br>**----- End of picture text -----**<br>


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20<br>15<br>10<br>5<br>0<br>0 100 200 300 400<br>Reverse Voltage (V)<br>Typical Capacitance Stored Energy vs VR<br>20<br>15<br>10<br>5<br>Vr<br>Ec ∫0  Cd(V)VdV<br>0<br>0 200 400 600 800 1000<br>Reverse Voltage (V)<br>Recovered Charge (nC)<br>Capacitance Stored Energy (µJ)<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDH10G120E2 Silicon Carbide Schottky Diode** 

## ~~**Transient Thermal Impedance, Zth(J-mb), per Diode**~~ 

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10<br>1<br>10 [-1]<br>P D = tp<br>T<br>D = 0.5<br>10 [-2]<br>D = 0.1<br>D = 0.05<br>D = 0.01 t p t<br>single pulse T<br>10 [-3]<br>10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 1 10<br>Pulse Duration (s)<br>Transient Thermal Impedance (°C/W)<br>**----- End of picture text -----**<br>


## ~~**Product Dimensions**~~ 

Package: TO220-2 

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9.65 - 10.30<br>(.380 - .406)<br>3.53 - 3.80 4.3 - 4.7<br>(.139 - .150) 1.15 - 1.40 (.169 - .185) 7.9 - 8.1<br>(.311 - .319)<br>(.045 - .055)<br>2.65 - 2.95<br>(.104 - .116)<br>6.9<br>15.70 - 16.25 (.272)<br>15.6 - 15.8 (.618 - .640) REF.<br>(.614 - .622)<br>2.2 - 2.6<br>12.5 - 15.0 (.087 - .102)<br>(.492 - .591)<br>0.70 - 0.95 1.17 - 1.70 0.45 - 0.65<br>(.028 - .037) (.046 - .067) (.018 - .026) DIMENSIONS: MM<br>(INCHES)<br>5.08<br>(.200)<br>REF.<br>**----- End of picture text -----**<br>


Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

## **BSDH10G120E2 Silicon Carbide Schottky Diode** 

## ~~**Typical Part Marking**~~ 

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MANUFACTURER’S<br>TRADEMARK<br>DEVICE CODE<br>SDH10G<br>120E2<br>***YYWW***<br>XXXXXXX<br>LOT ID DATE CODE<br>1ST~3RD CHARACTERS INDICATE<br>INTERNAL PRODUCTION CODE<br>4TH~5TH CHARACTERS INDICATE<br>YEAR<br>6TH~7TH CHARACTERS INDICATE<br>WEEK<br>8TH~10TH CHARACTERS INDICATE<br>INTERNAL SERIAL NO.<br>**----- End of picture text -----**<br>


## ~~**Environmental Specifications**~~ 

ESD Classification (HBM)...............................................................3B 

## ~~**Pin Information**~~ 

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MOUNTING BASE (mb)<br>1 2<br>1,mb 2<br>Cathode Anode<br>**----- End of picture text -----**<br>


## ~~**How to Order**~~ 

**B  SD  H  10  G  120  E  2** 

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Manufacturer<br>B = Bourns<br>Product Type<br>SD = SiC Diodes<br>Package Code<br>H = TO220-2<br>Current Rating<br>10 = 10 A<br>Device Type<br>G = General VF<br>Nominal Voltage<br>120 = 1200 V<br>Configuration<br>E = Single Diode<br>Version Number<br>**----- End of picture text -----**<br>


**Asia-Pacific:** Tel: +886-2 2562-4117 Email: asiacus@bourns.com **EMEA:** Tel: +36 88 885 877 Email: eurocus@bourns.com **The Americas:** Tel: +1-951 781-5500 Email: americus@bourns.com **www.bourns.com** 

## ~~**Packaging Specifications**~~ 

## 50 pcs./tube 

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0.70<br>(.028)<br>MIN.<br>LENGTH<br>537.00 33.00<br>(21.142) (1.299)<br>7.00<br>(.276)<br>MM<br>DIMENSIONS:<br>(INCHES)<br>**----- End of picture text -----**<br>


## REV. 06/23 

Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf. 

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