Image not available
Illustrative purposes only
BSD223PH6327XTSA1
Power MOSFET, P Channel, 20 V, 390 mA, 1.2 ohm, SOT-363, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-390mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.7ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: P Channel
- Product Range: OptiMOS P
- Qualification: AEC-Q101
- Power Dissipation: 250mW
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Transistor Case Style: SOT-363
- Drain Source Voltage Vds: 20V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 390mA
- Drain Source On State Resistance: 1.2ohm
- Gate Source Threshold Voltage Max: 900mV
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.069 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSD 223P** ## **OptiMOS[] -P Small-Signal-Transistor** |_V_DS|-20|V| |---|---|---| |_R_DS(on)|1.2|Ω| |DS(on)<br>_I_D|-0.39|A| ## **Feature** - Dual P-Channel - Enhancement mode - Super Logic Level (2.5 V rated) **==> picture [487 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> • 150°C operating temperature150°C operating temperature PG-SOT-363<br>4<br>• Avalanche rated Avalanche rated 5<br>6<br>• d d v /d t rated<br>(GS) Halogen-Free Q Zt<br>3<br>e Pb-free lead plating; ROHS compliant Kee 2 .<br>1<br>• Qualified according to AEC Q101 es RoHS ~ VPS05604<br>• Halogen-free according to IEC61249-2-21 Qualified MOSFET1: 1,2,6 Drain<br>MOSFET2: 3,4,5<br>pin 6,3<br>Type Package Tape & Reel Marking<br>Gate Source<br>BSD 223P PG-SOT-363 H6327: 3000pcs/r X1s pin 2,5 pin 1,4<br>**----- End of picture text -----**<br> - 150°C operating temperature150°C operating temperature - Avalanche rated Avalanche rated - d d _v_ /d _t_ rated - Qualified according to AEC Q101 ## **Maximum Ratings** , at _T_ j = 25 °C, unless otherwise specified |**Maximum Ratings**, at_T_j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|j = 25 °C, unless otherwise specified= 25 °C, unless otherwise specified|| |---|---|---|---| |j = 25 °C, unless otherwise specified<br>**Parameter**|j = 25 °C, unless otherwise specified<br>**Symbol**|j = 25 °C, unless otherwise specified<br>**Value**|**Unit**| |Continuous drain current<br>_T_A=25°C<br>_T_A=70°C|_I_D|-0.39<br>-0.31<br>-1.56|A| |Pulsed drain current<br>_T_A=25°C|_I_D puls||| |Avalanche energy, single pulse<br>_I_D=-0.39 A ,_V_DD=-10V,_R_GS=25Ω|_E_AS|1.4|mJ| |Reverse diode d_v_/d_t_<br>_I_S=-0.39A,_V_DS=-16V, d_i_/d_t_=200A/µs,_T_jmax=150°C|d_v_/d_t_|-6|kV/µs| |Gate source voltage|_V_GS|±12|V| |Power dissipation<br>_T_A=25°C|_P_tot|0.25|W| |Operating and storage temperature|_T_j ,_T_stg|-55... +150|°C| |IEC climatic category; DIN IEC 68-1|j ,stg|55/150/56|| |ESD Class<br>JESD22-A114-HBM||Class 0|| 2014-07-29 Rev.1.6 Page 1 **BSD 223P** **Thermal Characteristics** |**Thermal Characteristics**|| |---|---| |**Parameter**<br>**Characteristics**<br>~~ee ~~|**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~ee~~| |Thermal resistance, junction - soldering point<br>_R_thJS<br>-<br>-<br>180<br>K/W<br>Thermal resistance, junction - ambient, leaded<br>_R_thJA<br>-<br>-<br>500<br>~~ee~~<br>ee ae oeee|| |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Static Characteristics**<br>~~ee ~~|= 25 °C, unless otherwise specified<br>**Symbol**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br> ~~eee~~| |Drain-source breakdown voltage<br>_V_GS=0,_I_D=-250µA<br>Gate threshold voltage,_V_GS=_V_DS<br>_I_D=-1.5µA<br>Zero gate voltage drain current<br>_V_DS=-20V,_V_GS=0,_T_j=25°C<br>_V_DS=-20V,_V_GS=0,_T_j=150°C<br>Gate-source leakage current<br>_V_GS=-12V,_V_DS=0<br>Drain-source on-state resistance<br>_V_GS=-2.5V,_I_D=-0.29A<br>Drain-source on-state resistance<br>_V_GS=-4.5,_I_D=-0.39A|_V_(BR)DSS<br>-20<br>-<br>-<br>V<br>_V_GS(th)<br>-0.6<br>-0.9<br>-1.2<br>_I_DSS<br>-<br>-<br>-0.1<br>-10<br>-1<br>-100<br>µA<br>_I_GSS<br>-<br>-10<br>-100<br>nA<br>_R_DS(on)<br>-<br>1.27<br>2.1<br>Ω<br>_R_DS(on)<br>-<br>0.7<br>1.2<br>po} tt<br>| |<br>fT|<br>ett<br>|<br>|tf<br>| |tt<br>|tt| 2014-07-29 Rev.1.6 Page 2 **BSD 223P** |**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas|**Electrical Characteristics**, at_T_j= 25 °C, unless otherwise specified<br>**Parameter**<br>**Symbol**<br>**Conditions**<br>**Values**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Dynamic Characteristics**<br>Transconductance<br>_g_fs<br>_V_DS ≥2* _I_D *_R_DS(on)max<br>_I_D=-0.31A<br>0.35<br>0.7<br>-<br>S<br>Input capacitance<br>_C_iss<br>_V_GS=0,_V_DS=-15V,<br>_f_=1MHz<br>-<br>45<br>56<br>pF<br>Output capacitance<br>_C_oss<br>-<br>21<br>26<br>Reverse transfer capacitance<br>_C_rss<br>-<br>17<br>22<br>Turn-on delay time<br>_t_d(on)<br>_V_DD=-10V,_V_GS=-4.5V,<br>_I_D=-0.39A,_R_G=6Ω<br>-<br>3.8<br>5.7<br>ns<br>Rise time<br>_t_r<br>-<br>5<br>7.5<br>Turn-off delay time<br>_t_d(off)<br>-<br>5.1<br>7.6<br>Fall time<br>_t_f<br>-<br>3.2<br>4.8<br>~~ee~~<br>~~ee~~<br>pr TT<br>=—_===<br>nas| |---|---|---|---|---|---|---|---|---| |**Gate Charge Characteristics**||||||||| |Gate to source charge||_Q_gs||_V_DD=-10V,_I_D=-0.39A|-|-0.04|-0.05|nC| |Gate to drain charge||_Q_gd|||-|-0.4|-0.5|| |Gate charge total||_Q_g||_V_DD=-10V,_I_D=-0.39A,|-|-0.5|-0.62|| |||||_V_GS=0 to -4.5V||||| |Gate plateau voltage||_V_(plateau)||_V_DD=-10V,_I_D=-0.39A|-|-2.2|-2.7|V| |**Reverse Diode**||||||||| |Inverse diode continuous||_I_S||_T_A=25°C|-|-|-0.39|A| |forward current||||||||| |Inv. diode direct current, pulsed||_I_SM|||-|-|-1.56|| |Inverse diode forward voltage||_V_SD||_V_GS=0,_I_F=-0.39|-|-1|-1.33|V| |Reverse recovery time||_t_rr||_V_R=-10V, |_I_F| =|_l_D|,|-|7.6|9.5|ns| |Reverse recovery charge||_Q_rr||d_i_F/d_t_=100A/µs|-|1.1|1.4|nC| 2014-07-29 Rev.1.6 Page 3 **BSD 223P** ## **1 Power dissipation** ## _P_ tot = _f_ ( _T_ A) ## **2 Drain current** ## _I_ D = _f_ ( _T_ A) parameter: | _V_ GS|≥ 4.5 V **==> picture [487 x 605] intentionally omitted <==** **----- Start of picture text -----**<br> BSD 223P BSD 223P<br>0.28 -0.42<br>W A<br>0.240.22 PATTTPEINTTTLTTET LEETTTTTyey -0.36 SCEPOONA FEC EENSCECECEE CECEEEE<br>-0.32<br>0.2 PETIT N TLE EEEEE EL FEECONE<br>-0.28<br>0.18 FETT ETN ELEEEEE EL HHFEEEENE<br>0.16 FETT TINE EEEEE EL -0.24 FEEEEECE EEE<br>EEE NEEL<br>PCOOCE NCEE FEEEEEEEN EEE<br>0.14<br>0.12 FETT [TTT][ EN] [EEEEEL] -0.2 FCEEEEEEEEEINFEEEEEEEEEE RELL<br>-0.16<br>fe 0.1 COOeeeN of EEEEee<br>0.08 FETT -0.12 M<br>0.06 PET TTT TTTELLENLL EN EEEEEL ECEECePittFCEEEEEEEEEEEtt tteeeet [ty]<br>-0.08<br>0.04 PPTLPOULTTTT ELLEN EL -0.04 FCEEEEEEEEEEeEeECEECeeee eeeENEAN<br>0.02<br>0 FETT TTT LEELEELEN | 0 ai<br>0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160<br>—_ T A —_> T A<br>3 Safe operating area 4 Transient thermal impedance<br>D == f ( V DS ) ) Z thJA = f ( t p)<br>parameter : D = 0 , T A = 25 °C = 25 °C parameter : D = t p/ T<br>-10 1 BSD 223P 10 3 BSD 223P<br>K/W<br>A<br>10 2<br>t p = 390.0µs<br>-10 0 alll HH il 10 1 seals SSastiamstii east limattineatl<br> 1 ms<br>re a a HST SCH CTT<br>10 0<br>D = 0.50<br>0.20<br>-10 -1 10 ms 10 -1 0.10<br>0.05<br>0.02<br>noo 10 -2 A 0.01 Il<br>single pulse<br>-10 -2 TTT | PHM NHI DC 10 -3 AZ Z CAAAA Ee<br>-10 [-1 ] -10 [0 ] -10 [1 ] V -10 [2 ] 10 [-7 ] 10 [-6 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] s 10 [0 ]<br>—_ V DS ——_ t p<br>I D<br> /<br>V DS<br> =<br>R DS(on)<br>tot<br>P I D<br>thJA<br>D<br>I Z<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D == _f_ ( _V_ DS ) ) parameter : _D_ = 0 , _T_ A = 25 °C = 25 °C Rev.1.6 Page 4 2014-07-29 **BSD 223P** ## **5 Typ. output characteristic** _I_ D = _f_ ( _V_ DS) parameter: _T_ j =25°C ## **6 Typ. drain-source on resistance** _R_ DS(on) = _f_ ( _I_ D) parameter: _V_ GS **==> picture [480 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 4<br>3V<br>4V<br>A 4.5V W/o Ω<br>2.2V<br>6V<br>2.5V<br>7V<br>0.5 8V 2.5V 3 3V 4V<br>10V<br>4.5V<br>2.5 6V<br>0.4 7V<br>8V<br>2 10V<br>2.2V<br>0.3<br>WA . 1.5 KT<br>0.2<br>AT |) SRS<br>1<br>0.1<br>0.5<br>Yoo SS<br>Y|<br>0 | | | | 0 CELLET<br>0 0.3 0.6 0.9 V 1.5 0 0.1 0.2 0.3 0.4 0.5 A 0.7<br>- V DS - I D<br>D DS(on)<br>I - R<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D= _f_ ( _V_ GS ); | _V_ DS|≥ 2 x | _I_ D| x _R_ DS(on)max parameter: _T_ j = 25 °C ## **8 Typ. forward transconductance** _g_ fs = f( _I_ D) parameter: _T_ j = 25 °C **==> picture [480 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 1.1<br>S<br>A TTI =e<br>0.9<br>0.5 TEC) 0.8 eee“<br>0.7<br>0.4 See ieee<br>0.6<br>Jip 0.5<br>0.3<br>| Pp , 0.4 BAPE<br>0.2<br>it ly | 0.3 Fy | | ft tf<br>0.2<br>0.1<br>pte A 0.1 PARRA<br>| | Le PCE<br>0 0<br>0 0.5 1 1.5 2 V 3 0 0.1 0.2 0.3 0.4 0.5 A 0.7<br>- V GS - I D<br>I D- g fs<br>**----- End of picture text -----**<br> Rev.1.6 Page 5 2014-07-29 **BSD 223P** ## **9 Drain-source on-resistance** ## **10 Typ. gate threshold voltage** _V_ GS(th) = _f_ ( _T_ j) _R_ DS(on) = f( _T_ j) parameter: _V_ GS = _V_ DS parameter: _I_ D = -0.39 A, _V_ GS = -4.5 V **==> picture [483 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 1.6<br>V<br>Ω 98%<br>1.2 1.2 98%<br>1 1<br>rt ttt EPrR tee<br>typ. typ.<br>0.8 0.8<br>RRRRREDE S \<br>0.6 0.6<br>+ cae _) | PN PN<br>ert TT HPL TP<br>2%<br>0.4 0.4<br>aN<br>ACCS) EE<br>0.2 LLELLLLELE 0.2 TLLELLLLLE?<br>0 0<br>-60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160<br>T T<br>—_r j —_r j<br>11 Typ. capacitances 12 Forward character. of reverse diode<br> = f ( V DS)) I F = f (VSD)<br>parameter: V GS=0, =0, f =1 MHz parameter: T j<br>10 2 -10 1 BSD 223P<br>Po ====SSSSS======<br>A<br>PEEP EEEEEE EER EER EEREEREEE<br>PTT i ttt tT yy ty FLEET TEEPE e<br>C iss<br>-10 0<br>T Y | CEee<br>LEP =====7 ===<br>pF<br>NOEL EEL canny oeeeeee<br>VX ae s/n<br>C oss<br>W O -10 -1 cn) ///Aoooeone<br>PA OT<br>T j = 25 °C typ<br>SH =e ===<br>C rss T j = 150 °C typ<br>| PIN TT jj = 25 °C (98%) = 150 °C (98%) an<br>10 1 lies -10 -2 =HTE EETh<br>0 2 4 6 8 10 12 V 15 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3<br>- V DS V SD<br>DS(on) V GS(th)<br>R -<br>F<br>C I<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** ## _C_ = _f_ ( _V_ DS)) parameter: _V_ GS=0, =0, _f_ =1 MHz 2014-07-29 Rev.1.6 Page 6 **BSD 223P** ## **13 Typ. avalanche energy** _E_ AS = _f_ ( _T_ j), par.: _I_ D = -0.39 A _V_ DD = -10 V, _R_ GS = 25 Ω **==> picture [227 x 601] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>mJ<br>1<br>0.8<br>0.6<br>0.4<br>0.20 et EE INE<br>20 40 60 80 100 120 °C 160<br>T<br>j<br>15 Drain-source breakdown voltage<br>(BR)DSS = = f ( T j))<br>BSD 223P<br>-24.5<br>V<br>Pi ttt tt ttt ty<br>-23.5-22.5-23 -22 PtPitPiPLE|]ttttttitettttt tttttttetftiyy<br>-21.5 Pi ttt ttEE| EeAy fy<br>-21<br>-20.5<br>t Ye<br>GE<br>-19.5-20 Pi iAtt<br>PTY tt ttt<br>-19<br>-18.5 ryt ttt tt tt dd<br>-18 PEP ttEE tE t ttttttbttyd<br>-60 -20 20 60 100 °C 180<br>T<br>j<br>AS<br>E<br>(BR)DSS<br>V<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** _V_ (BR)DSS = = _f_ ( _T_ j)) ## **14 Typ. gate charge** _V_ GS = _f_ ( _Q_ Gate) parameter: _I_ D = -0.39 A pulsed; _T_ j = 25 °C **==> picture [228 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> BSD 223P<br>-16 PP tT TT Tt ty yyy<br>V<br>-12<br>-10<br>-8<br>20%<br>50%<br>-6<br>80%<br>-4<br>-2<br>0 PEEEEEE EERE<br>0 0.2 0.4 0.6 0.8 1 nC 1.3<br>|Q Gate |<br>GS<br>V<br>**----- End of picture text -----**<br> Rev.1.6 Page 7 2014-07-29 **BSD 223P** **Package Outline:** ## **Footprint:** **Packaging:** Reflow soldering: Dimensions in mm ## **For symmetric types there is no defined Pin 1 orientation in the reel.** 2014-07-29 Rev. 1.6 page 8 **BSD 223P** ## **Published by Infineon Technologies AG** ## **81726 Munich, Germany** **© 2008 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2014-07-29 Rev. 1.6 page 9
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →