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BSC360N15NS3GATMA1
Power MOSFET, N Channel, 150 V, 33 A, 0.031 ohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 74W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 33A
- Drain Source On State Resistance: 0.031ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.681 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC360N15NS3 G** ## "%&$!"# **™3 Power-Transistor** ## **Features** _R_ 9H"[Z# _R_ 9H"[Z# **==> picture [173 x 70] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |Product Summary| |V|9H|)-(|J| |R|9H"[Z#$YMd|+.|Y"| |I|9|++|6| **----- End of picture text -----**<br> **==> picture [6 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> )#<br>**----- End of picture text -----**<br> **==> picture [133 x 109] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |Type| |1| |=| |4| |Package|E=%I9HDC%0| |Marking|+.(C)-CH| **----- End of picture text -----**<br> **==> picture [422 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |Maximum ratings,|at|V|=25|°C,|unless|otherwise|specified| |Parameter|Symbol|Conditions|Value|Unit| |I|9|T|8|++|6| |T|8|*)| |I|9$\aX_Q|T|8|)+*| |E|6H|I|9|R|=H|"|0(|Y@| |Avalanche|energy,|single|pulse|a|=25|A,|=25|Po| |+#|V|=H|q*(|J| |P|`[`|T|8|/,|K| |T|V|T|_`S| |Operating and storage temperature|Pf|-55|...|150|°C| **----- End of picture text -----**<br> ## **BSC360N15NS3 G** |**BSC360N15NS3 G**<br>~~Cinfi~~|**BSC360N15NS3 G**<br>~~Cinfi~~|**BSC360N15NS3 G**<br>~~Cinfi~~|**BSC360N15NS3 G**<br>~~Cinfi~~|**BSC360N15NS3 G**<br>~~Cinfi~~|**BSC360N15NS3 G**<br>~~Cinfi~~|**BSC360N15NS3 G**<br>~~Cinfi~~| |---|---|---|---|---|---|---| |~~Cinfi~~||||||| |**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Thermal characteristics**||||||| ||_R_T@8||%|%|)&/|A'K| |MYNUQZ<br>Thermal resistance, junction -|_R_T@6|+#<br>:<br>6 cm2 cooling area|%|%|-(|| |**Electrical characteristics,**<br>V<br>at<br>=25 °C, unless otherwise specified||||||| |**Static characteristics**<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf]~~||||||| |~~Drain-sourcebreakdownvoltage~~|_V_"7G#9HH <br>~~P|~~|_V_=H<br>_I_9<br>~~P|~~<br>~~=0V,=1mA~~|)-(<br>~~Pf]~~|%<br>~~Pf]~~|%<br>~~Pf]~~|J| |~~Drain-source breakdown voltage~~|_V_=H"T#<br>~~P|~~|_V_9H4_V_=H _I_9<br>~~P|~~<br>~~=0V, =1mA ~~|*<br> ~~Pf]~~|+<br>~~Pf]~~|,<br>~~Pf]~~|| |Zero<br>gate<br>voltage<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~<br>~~|~~|_I_9HH<br>~~||~~|_V_9H<br>_V_=H<br>_T_V<br>~120V,<br>=0N,<br>=25 °C|%|(&)|)|r6| |||_V_9H<br>_V_=H<br>_T_V<br>=120 V,<br>=0V,<br>=125 °C<br>~~=20V,~~<br>~~=0V~~|%<br>~~Pf]~~|)(<br>~~Pf]~~|)((<br>~~Pf]~~|| |~~Gate-sourceleakagecurrent~~<br>~~|~~<br>Drain-sourceon-stateresistance|_I_=HH<br>~~||~~|_V_=H<br>_V_9H<br>~~=20V,~~<br>~~=0V~~<br>~~=10V,=25A~~|%<br>~~Pf]~~<br>~~Pf~~|)<br>~~Pf]~~<br>~~Pffd~~|)((<br>~~Pf]~~<br>~~fd~~|Z6| |~~Gate-source leakage current~~<br>~~|~~<br>Drain-source on-state resistance|_R_9H"[Z#<br>~~| |~~|_V_=H<br>_I_9<br>~~=20 V,~~<br>~~=0V ~~<br>~~=10V,=25A~~|%<br> ~~Pf]~~<br>~~Pf~~|+)<br>~~Pf]~~<br>~~Pffd~~|+.<br>~~Pf]~~<br>~~fd~~|Y"| |||_V_=H<br>_I_9<br>~~=10V, =25A ~~|%<br> ~~Pf~~|+)<br>~~Pf fd~~|+0<br>~~fd~~|| ||_R_=||%|)&/|%|"| |I^MZ_O[ZPaOMZOQ|_g_R_|g_V_9Hg5*g_I_9g_R_9H"[Z#YMd<br>_I_9|)-|*1|%|H| |*#<br>)#<br>+#<br>J-STD20 and JESD22<br>See figure 3<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.||||||| )# *# +# ## **BSC360N15NS3 G** |**BSC360N15NS3 G**<br>~~Cifineon~~|**BSC360N15NS3 G**<br>~~Cifineon~~|**BSC360N15NS3 G**<br>~~Cifineon~~|**BSC360N15NS3 G**<br>~~Cifineon~~|**BSC360N15NS3 G**<br>~~Cifineon~~|**BSC360N15NS3 G**<br>~~Cifineon~~|**BSC360N15NS3 G**<br>~~Cifineon~~| |---|---|---|---|---|---|---| |~~Cifineon~~||||||| |**Parameter**|**Symbol **|**Conditions**|**Values**|||**Unit**| ||||**min.**|**typ.**|**max.**|| |**Dynamic characteristics**||||||| ||_C_U__|_V_=H<br>_V_9H<br>_f_<br>" J<br>=0V,<br>=75V,<br>=1<br>~~P|~~|%|01+|))1(|\<| |j<br>Output capacitance<br>~~Reversetransfercapacitance~~|_C_[__<br>~~P|~~||%<br>~~Pf]~~|)(.<br>~~Pf]~~|),)<br>~~Pf]~~|| |~~Reversetransfercapacitance~~|_C_^__<br>~~P|~~||%<br>~~Pf]~~|,<br>~~Pf]~~|&<br>~~Pf]~~|| |~~Reverse transfer capacitance~~|_t_P"[Z#<br>~~P|~~|_V_99<br>_V_=H<br>_I_9<br>_R_=<br>"<br>~~P|~~|%<br>~~Pf]~~|1<br>~~Pf]~~|%<br>~~Pf]~~|Z_| ||_t_^||%|.|%|| ||_t_P"[RR#||%|)*|%|| ||_t_R||%|,|%|| |#<br>Gate Char e Characteristics||||||| ||_Q_S_|_V_99<br>_I_9<br>_V_=H<br>=0 to 10V|%|-|%|Z8| ||_Q_SP||%|*|%|| |witching charge|_Q__c||%|,|%|| ||_Q_S||%|)*|)-|| ||_V_\XMQMa||%|-&,|%|J| ||_Q_[__|_V_99<br>_V_=H|%|*1|+1|Z8| |**Reverse Diode**<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~||||||| |~~Diodecontinousforwardcurrent~~|_I_H<br>~~P|~~|_T_8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|++<br>~~Pf]~~|6| |~~Diode continous forward current~~|_I_H$\aX_Q<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|)+*<br>~~Pf]~~|| |Diode forward<br>volt<br>iode forward<br>voltage|_V_H9|_V_=H<br>_I_<<br>_T_V<br>HOM<br>SSSA,<br>=25 °C|%|)|)&*|J| ||_t_^^|_V_G<br>_I_<<br>P_i_<'P_t_<br>C|%|/0|%|Z_| ||_Q_^^||%|*-(|%|Z8| |-#<br>See figure 16 for gate charge parameter definition||||||| -# **BSC360N15NS3 G** ## **1 Power dissipation** _P_ `[`4R" _T_ 8# **==> picture [203 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>T C [°C]<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ 94R" _V_ 9H yy _T_ 8 -=25 °C; _D_ 4( **==> picture [9 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> t \<br>**----- End of picture text -----**<br> **==> picture [203 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>C<br>10 [2] C<br>: C<br>100 1ms<br>10 [1]<br>10 ms<br>10 [0]<br>98<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br> ## **2 Drain current** _I_ 94R" _T_ 8 ); _V_ =H" **==> picture [204 x 558] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150 175<br>T C [°C]<br>4 Max. transient thermal impedance<br> `T@84R"4R" t \##<br>parameter: D 4 t \' T<br>10 [1]<br>(&-<br>10 [0] Bi fit<br>(&*<br>geste ai<br>(&)<br>(&(-<br>(&(*<br>10 [-1] (&()<br>We<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t p [s]<br>[A]<br>ID<br> [K/W]<br> thJC<br>Z<br>**----- End of picture text -----**<br> ## **4 Max. transient thermal impedance** _Z_ `T@84R"4R" _t_ \## **BSC360N15NS3 G** **==> picture [124 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 5 Typ. output characteristics<br>**----- End of picture text -----**<br> **==> picture [145 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Typ. drain-source on resistance<br>**----- End of picture text -----**<br> **==> picture [53 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> I 94R" V 9H ); T V<br>**----- End of picture text -----**<br> **==> picture [64 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> R 9H"[Z#4R" I 9 ); T V<br>parameter: V =H<br>**----- End of picture text -----**<br> **==> picture [421 x 579] intentionally omitted <==** **----- Start of picture text -----**<br> parameter: V =H parameter: V =H<br>80 60<br>5V<br>6V<br>5.5V<br>50<br>60<br>40 7V<br>a ay 10V<br>40 30<br>f 20<br>20<br>10<br>0 0<br>0 1 2 3 4 5 0 10 20 30 40 50<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>4R" V =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd g R_4R" I 9 ); T V =25°C<br>parameter: T V<br>40 50<br>40<br>30<br>30<br>20<br>20<br>10<br>10<br>0 0<br>0 1 2 3 4 5 6 7 0 10 20 30 40 50<br>V GS [V] I D [A]<br>]<br>[m<br> [A]<br>I D<br> DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> **7 Typ. transfer characteristics** **==> picture [127 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> I 94R" V =H ys | 9H [[g5*g]] [[I]] 9 [[g]] [[R]] 9H"[Z#YMd<br>**----- End of picture text -----**<br> **BSC360N15NS3 G** ## **9 Drain-source on-state resistance** _R_ 9H"[Z#4R" _T_ V ); _I_ 9 =25 A; _V_ =H ## **10 Typ. gate threshold voltage** _V_ =H"`T#4R" _T_ V ); _V_ =H4 _V_ 9H _I_ 9 **==> picture [188 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>G<br>98 %<br>40<br>`e\<br>30<br>20<br>10<br>0<br>-60 -20 20 60 100 140<br>T j [°C]<br>]<br>[m<br> DS(on)<br>R<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ 4R" _V_ 9H ): _V_ =H =0V; _f_ =1 " J **==> picture [204 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>3.5<br>450 A<br>3<br>45 A<br>2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br> GS(th)<br>V<br>**----- End of picture text -----**<br> ## **12 Forward characteristics of reverse diode** _I_ <4R" _V_ H9# _T_ V **==> picture [206 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4]<br>8U__<br>10 [3] 5 5ce= 22 5S6e<br>8[__<br>10 [2]<br>10 [1]<br>8^__<br>0 20 40 60 80 100 120<br>V DS [V]<br>[pF]<br>C<br>**----- End of picture text -----**<br> **==> picture [200 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>10 [2]<br>25°C<br>150°C, max<br>150°C<br>25 °C, max<br>10 [1]<br>10 [0]<br>0 0.5 1 1.5 2<br>V SD [V]<br> [A]<br>I F<br>**----- End of picture text -----**<br> **BSC360N15NS3 G** **==> picture [125 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> 13 Avalanche characteristics<br>**----- End of picture text -----**<br> **==> picture [213 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> I 6H4R" t 6J ); R =H =25 "<br>parameter: T V"_`M^`#<br>100<br>35°C<br>10<br>100 °C<br>125°C<br>1<br>1 10 100 1000<br>t AV [µs]<br>15 Drain-source breakdown voltage<br>V 7G"9HH#4R" T V ); I 9 =1mA<br>170<br>160<br>150<br>140<br>130<br>-60 -20 20 60 100 140<br>T j [°C]<br> [A]<br>I AS<br> [V]<br> BR(DSS)<br>V<br>**----- End of picture text -----**<br> **==> picture [85 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> 14 Typ. gate charge<br>**----- End of picture text -----**<br> **==> picture [65 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> V =H4R" Q SM`Q ); I 9<br>parameter: V 99<br>**----- End of picture text -----**<br> **==> picture [202 x 244] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8 q*<br>75V<br>A<br>6<br>4<br>2<br>0<br>0 5 10 15<br>Q gate [nC]<br> [V]<br> GS<br>V<br>**----- End of picture text -----**<br> **16 Gate charge waveforms** **==> picture [187 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> V =H<br>Q g<br>V S _"`T#<br>Q S"`T# Q _c Q gate<br>Q S_ Q SP<br>**----- End of picture text -----**<br> **BSC360N15NS3 G** **PG-TDSON-8 Outline** **BSC360N15NS3 G** nearest Infineon Technologies Office (www. infineon.com). PPP&CG@CG?HG&=HF#&
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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