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Illustrative purposes only
BSC350N20NSFDATMA1
Power MOSFET, N Channel, 200 V, 35 A, 0.035 ohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.031ohm; R; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS
- Qualification: -
- Power Dissipation: 150W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 35A
- Drain Source On State Resistance: 0.035ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 2.83 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSC350N20NSFD**
## **MOSFET**
## **OptiMOS[TM]**
## **Features**
_R_ DS(on) _R_ DS(on)
|**Parameter**<br>Table 1<br>Key Performance|**Value**<br>Performance Parameters|**Unit**<br>Parameters|
|---|---|---|
|_V_DS|200|V|
|_R_DS(on),max|35|mΩ|
|_I_D|35|A|
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|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSC350N20NSFD<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TDSON-8<br>~~**|**~~|350N20NF|-|
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC350N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.1,��2016-12-05
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC350N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|35<br>27|A|_T_C=25°C<br>_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|140|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|97|mJ|_I_D=27.2A,_R_GS=25Ω|
|Reversediodepeakd_v_/d_t_|d_v_/d_t_|-|-|60|kV/µs|_I_D=68A,_V_DS=100V,<br>d_i_/d_t_=1500A/µs,_T_j,max=175°C|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|150|W|_T_C=25°C|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.6|1|K/W|-|
|Thermal resistance, junction - ambient,<br>minimal footprint|_R_thJA|-|-|75|K/W|-|
|Thermal resistance, junction - ambient,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|
## **3�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|200|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2|3|4|V|_V_DS=_V_GS,_I_D=90µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=160V,_V_GS=0V,_T_j=25°C<br>_V_DS=160V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|31|35|mΩ|_V_GS=10V,_I_D=35A|
|Gate resistance|_R_G|-|3.3|5|Ω|-|
|Transconductance|_g_fs|29|57|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=35A|
- 1) See Diagram 3
- 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Final Data Sheet
3
Rev.�2.1,��2016-12-05
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC350N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1810|2410|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|137|182|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Reverse transfer capacitance1)|_C_rss|-|5.4|-|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|8.0|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|4.8|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|17|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|4.8|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|8.6|-|nC|_V_DD=100V,_I_D=35A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|3.0|-|nC|_V_DD=100V,_I_D=35A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|6.2|-|nC|_V_DD=100V,_I_D=35A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|22|30|nC|_V_DD=100V,_I_D=35A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.7|-|V|_V_DD=100V,_I_D=35A,_V_GS=0to10V|
|Output charge|_Q_oss|-|54|-|nC|_V_DD=100V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|35|A|_T_C=25°C|
|Diode pulse current3)|_I_S,pulse|-|-|140|A|_T_C=25°C|
|Diode hard commutation current4)|_I_S,hard|-|-|68|A|_TC=25°C,_d_i_F/d_t_=1500A/µs|
|Diode forward voltage|_V_SD|-|1.0|1.2|V|_V_GS=0V,_I_F=35A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|70|140|ns|_V_R=100V,_I_F=_24A_,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|93|186|nC|_V_R=100V,_I_F=_24A_,d_i_F/d_t_=100A/µs|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition
> 3) Diode pulse current is defined by thermal and/or package limits
> 4) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
Final Data Sheet
Rev.�2.1,��2016-12-05
4
**OptiMOS[TM]** 3 **BSC350N20NSFD**
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Final Data Sheet
5
**OptiMOS[TM] BSC350N20NSFD**
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60 60<br>50 10 V 50 4.5 V<br>7 V 5 V<br>5 V<br>40 40<br>7 V<br>10 V<br>30 30<br>20 4.5 V 20<br>10 10<br>0 0<br>0 1 2 3 4 5 0 10 20 30 40 50 60 70<br>V DS IV] I D [Al<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>50 a ee | ee ee 80 ya<br>a ee ee | ee ee<br>aa a es ee|| ||ee 70 7 ZO<br>40 aa ee| |8| ee ee a<br>a ee ee 2 2 ee ee 60 7<br>sea eeee 2 e e ee<br>50<br>a 2 ee ee<br>30<br>a ee 2 ee ee 7<br>a ee 2 ee<br>z ae ee eeee ey<br>= a ee ee 40<br>a ee 2 ee ee ee /<br>20 a ee ee ee /<br>aee ee)ee ee 30<br>a ee ee ee ee<br>ee ee ee ee<br>175 °C 20<br>10 |eea| pyoo|eee|<br>— [|] ee ee 2) ee ee ee 10<br>25 °C<br>—ee| |ee ee a a<br>|<br>0 | A Ss 0<br>0 2 4 6 8 0 25 50 75<br>V GS IV] I D [Al<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC350N20NSFD**
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120 Pt | | ff) tp tb i 4 4.0 P| |i ttt | ft tt ft<br>3.5<br>100<br>COO | SRE 3.0 900 µA<br>> ><br>80<br>90 µA<br>2.5<br>PEELE AER EEE<br>60 2.0<br>EECCA 98% A / FF EEE<br>1.5<br>40<br>typ<br>COCA | EES 1.0<br>20 CEEPEECPsA AEC | FERRER EEE<br>0.5<br>0 ettTTTE_ TLLLL EE Ly LItt 0.0 PtePEELEyy pbELLE, pp<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>25 °C<br>175 °C<br>Yr | [| [| [| — [ [ -— [ [ JT | [ JT 7] [| 25°C, 98% Eeee<br>Ciss 175°C, 98%<br>NES SES i i ee ee<br>10 [3] NU [tT 7. [| | | | | 4<br>YrSessa| | {[\l -— [ [ -— [ [ JT | [ JT 7] 10 [2] L soedtos<br>Coss<br>a 10 [2] COC ERR 2 - | 4fee<br>SSS SS SS SS SS ee ee ee ee ee<br>SASSER OP FA<br>10 [1]<br>pi AP PP et tt —— ff eg<br>10 [1] BEAVEREEEESEEEEE SS<br>Crss<br>=== _ === == = —_—}_}-}-_____<br>E H ee ee ed ee ee ee<br>PEELE Ladi<br>10 [0] 10 [0] fT |<br>0 40 80 120 160 0.0 0.5 1.0 1.5 2.0<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM]** 3 **BSC350N20NSFD**
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PT Gate charge waveforms
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230<br>OO<br>a<br>a a a<br>aa<br>a<br>220<br>a<br>97<br>Oo<br>sO<br>a<br>~~ 210 EPP PTy~y Ty Ty<br>5S FTP [reT?TYererey]<br>a 02 |<br>2<br>200 4<br>a<br>a<br>rtTi7Atssetl tells<br>a 22 ee<br>190 PAT<br>a a<br>22<br>180<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM]** 3 Power-Transistor, 200 V **BSC350N20NSFD**
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EUROPEAN PROJECTION<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] BSC350N20NSFD**
Final Data Sheet
10
**OptiMOS[TM] BSC350N20NSFD**
## BSC350N20NSFD
## Previous Revision
|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|1.1|2016-05-04|Release of Preliminary Datasheet|
|1.2|2016-05-13|Rev. 1.2 (preliminary datasheet)|
|2.0|2016-10-21|Release of final version|
|2.1|2016-12-05|Update Eas|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
11
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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