BSC340N08NS3GATMA1
Power MOSFET, N Channel, 80 V, 23 A, 0.034 ohm, SuperSOT, Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Pow
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 32W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SuperSOT
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 23A
- Drain Source On State Resistance: 0.034ohm
- Gate Source Threshold Voltage Max: 2.8V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.226 € |
| Current stock | 1000+ |
| Lead time | 30 days |
"%&$!"#C 3 9@/; % ;+8<3<=9; 6KGYZWKX
|infi<br>~~CnfineonBEAONOBN3G~~|infi<br>~~CnfineonBEAONOBN3G~~|infi<br>~~CnfineonBEAONOBN3G~~|infi<br>~~CnfineonBEAONOBN3G~~|infi<br>~~CnfineonBEAONOBN3G~~|
|---|---|---|---|---|
|"%&$!"#C!"#CC<br>9@/; % ;+8<3<=9;<br>6KGYZWKX<br>'9H"[Z#<br>)#<br>V<br>)9H<br>0(<br>J<br>'9H"[Z#$YMd<br>+,<br>Y"<br>$9<br>*+<br>6<br>"<br>>77+;B<br>A^VK<br>>GIQGMK<br>E=%I9HDC%0<br>;GWQOTM<br>+,(C(0CH<br>~~CnfineonBE AONOBN 3G~~<br>3<br>roduct<br>* Ideal for high frequency switching<br>* Optimized technology for DC/DC converters<br>« Excellent gate charge x<br>product (FO)<br>¢ Superior thermal resistance<br>RoHS<br>¢ -channel, normallevel<br>S/<br>* 100% avalanche tested<br>* Pb-free plating; Ro Scompliant<br>(At Halogen-Free<br>* Qualified according to JEDEC<br>for target applications<br>*<br>alogen-free according to IEC61249-2-21<br>-<br>Ss aif<br>iD<br>1<br>B<br>|<br>6<br>‘<br>GY<br>1D<br>Maximum ratings, at<br>=25 °C, unless otherwise specified|||||
|>GWGSKYKW<br>Continuousdraincurrent|@^SHUR|3UTJOYOUTX<br>~~=10V,~~<br>~~=25°C Po~~|BTOY<br>CGRZK<br>~~Po~~|BTOY|
|Continuous drain current|$9|)=H<br>(8<br>~~=10V,~~<br>~~=25°C Po~~|*+<br>6<br>)-<br>/<br>1*<br>*(<br>Y@<br>~~Po~~|6<br>Y@|
|||)=H<br>(8<br>~~=10V,~~<br>~~=25°C Po~~|||
|||)=H<br>(6<br>'T@6<br>/ *#<br>=10V,<br>=25°C,<br>=50|||
||$9$\aX_Q|(8|||
|,#|#6H|$9<br>'=H<br>"|||
||)=H||q*(<br>J|J|
|)#<br>+#<br>*#<br>J-STD20 and JESD22<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.<br>See figure 3 for more detailed information<br>“)See figure 13 for more detailed information|||||
+#
V
|>GWGSKYKW||@^SHUR|3UTJOYOUTX||CGRZK|||BTOY|
|---|---|---|---|---|---|---|---|---|
|||%[|(8||+*|||K|
||||(6<br>'T@6<br>/ *#<br>=25 °C,<br>=50||*&-||||
|(V (_S<br>Operatingandstoragetemperature~~Pf~~<br>~~IEC climatic category; DI IEC 68-1 PoP~~|||||-55 ... 150<br>~~55/150/56~~|||°C|
|>GWGSKYKW||@^SHUR|3UTJOYOUTX||CGRZKX|||BTOY|
|||||SOT%|Y^V%||SG]%||
## %
||||'T@8|T@8|N[[Y||%|%||+&1|A'K|
|---|---|---|---|---|---|---|---|---|---|---|---|
||||||[\|||||*(||
||||'T@6|T@6|*<br>*#<br>~~minimal footprint~~<br>~~pen esorgaee ~~|<br> <br>%<br>%<br>~~Pf~~<br> ~~| | ~~|||-(<br>~~|~~<br>~~2 |~~<br> ~~|_|~~|||
|V|=25|°C,||unless|otherwise specified|||||||
|$ tatic characteristics|||||||
|---|---|---|---|---|---|---|
|~~Drain-source breakdown voltage~~||)"7G#9HH <br>)=H"T#<br>~~| |~~||)=H<br>$9<br>)9H4)=H $9<br>~~=0V, =1mA ~~|0(<br>%<br>%<br>*<br>*&0<br>+&-<br> ~~Pf]~~|J|
|Zero<br>gate<br>voltage<br>drai<br>ero gate voltage<br>drain curren|t||$9HH|)9H<br>)=H<br>(V<br>“80V,<br>=ON,<br>-95 °C|%<br>(&)<br>)|r6|
|||||)9H<br>)=H<br>(V<br>=80 V,<br>=0 V,<br>=125 °C|%<br>)(<br>)((||
|~~Gate-source leakage current~~<br>Drain-source on-state resistance|||$=HH<br>)=H<br>)9H<br>'9H"[Z#<br>)=H<br>$9<br>~~P|~~<br>~~=20 V,~~<br>~~=0V ~~<br>=10V,<br>=12A||%<br>)(<br>)((<br>%<br>*/&-<br>+,<br> ~~Pf]~~<br> ~~Pf]~~|Z6<br>Y"|
|||||)=H<br>$9|%<br>+0&)<br>..||
||||'=||%<br>)<br>%|"|
|I^MZ_O[ZPaOMZOQ|||,R_|g)9Hg5*g$9g'9H"[Z#YMd<br>$9|0<br>).<br>%|H|
|em<br>fj<br>Cn Ineon<br>B C340N08N 3G|em<br>fj<br>Cn Ineon<br>B C340N08N 3G|em<br>fj<br>Cn Ineon<br>B C340N08N 3G|em<br>fj<br>Cn Ineon<br>B C340N08N 3G|em<br>fj<br>Cn Ineon<br>B C340N08N 3G|em<br>fj<br>Cn Ineon<br>B C340N08N 3G|em<br>fj<br>Cn Ineon<br>B C340N08N 3G|
|---|---|---|---|---|---|---|
||||||||
|>GWGSKYKW|@^SHUR|3UTJOYOUTX|CGRZKX|||BTOY|
||||SOT%|Y^V%|SG]%||
|Dynamic characteristics<br>~~Inputcapacitance~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Inputcapacitance~~<br>~~Outputcapacitance~~|!U__<br>~~P|~~<br>~~P|~~|)=H<br>)9H<br>+<br>" J<br>~~P|~~<br>~~P|~~ =4“OV,<br>“40V, <br>~~P|~~|%<br>~~Pf]~~<br>~~Pf]~~|-.,<br>~~Pf]~~<br>~~Pf]~~|/-.<br>~~Pf]~~<br>~~Pf]~~|\<|
|~~Input capacitance~~<br>~~Outputcapacitance~~|![__<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|)-.<br>~~Pf]~~<br>~~Pf]~~|*(,<br>~~Pf]~~<br>~~Pf]~~||
|~~Output capacitance~~<br>Reversetransfercapacitance<br>~~Turn-ondelaytime~~|8^__<br>~~P|~~<br>~~a~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|/<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~||
|~~Turn-ondelaytime~~|.P"[Z#<br>~~P|~~|)99<br>)=H<br>$9<br>'=<br>"<br>~~P|~~<br>~~P|~~ =12A,<br>=16|%<br>~~Pf]~~|0<br>~~Pf]~~|%<br>~~Pf]~~|Z_|
|~~Turn-on delay time~~<br>~~Turn-offdelaytime~~|.^<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|+<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~||
|~~Turn-offdelaytime~~|.P"[RR#<br>~~P|~~||%<br>~~Pf]~~|))<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Turn-off delay time~~|.R<br>~~P|~~||%<br> ~~Pf]~~|*<br>~~Pf]~~|%<br>~~Pf]~~||
|#<br>Gate Char e Characteristics<br>~~Gatetosourcecharge~~<br>~~po~~<br>~~Pf~~|||||||
|~~Gatetosourcecharge~~<br>~~po~~<br>~~Gatechargeatthreshold~~<br>~~po~~|&S_<br>~~po~~<br>~~po~~|)99<br>$9<br>)=H<br>~~P|~~<br>=40V,<br>=12A, <br>~~P|~~<br>=0to 10V<br>~~P|~~<br>~~P|~~|%<br>~~Pf~~<br>~~Pf~~|*&,<br>~~Pf~~<br>~~Pf~~|%<br>~~Pf~~<br>~~Pf~~|Z8|
|~~Gate to source charge~~<br>~~po~~<br>~~Gatechargeatthreshold~~<br>~~po~~<br>~~Gatetodraincharge~~|&S"T#<br>~~po~~<br>~~po~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|)&+<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|%<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~||
|~~Gate charge at threshold~~<br>~~po~~<br>~~Gatetodraincharge~~<br>~~Switchingcharge~~|&SP<br>~~po~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|)&-<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate to drain charge~~<br>~~Switchingcharge~~<br>~~Gatechargetotal~~|&_c<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|*&.<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Switching charge~~<br>~~Gatechargetotal~~<br>~~Gateplateauvoltage~~|&S<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|.&0<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|1&)<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate charge total~~<br>~~Gateplateauvoltage~~|)\XMQMa<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|-&*<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~|J|
|~~Gate plateau voltage~~|&[__<br>~~P|~~|)99<br>)=H<br>~~P|~~|%<br>~~Pf]~~|1<br>~~Pf]~~|)*<br>~~Pf]~~|Z8|
|#<br>everse Diode<br>~~**Diode**continuousforwardcurrentese|}—+—~~|||||||
|~~**Diode**continuousforwardcurrent~~|$H<br>~~ese~~|(8<br>~~ese|~~<br>=25 °C|%<br>~~|}—+—~~|%<br>~~}—+—~~|*+<br>~~}—+—~~|6|
|~~**Diode**continuousforwardcurrent~~<br>pulsecurrent|$H$\aX_Q<br>~~ese~~<br>~~a~~||%<br>~~|}—+—~~<br>~~Pf~~|%<br>~~}—+—~~<br>~~Pf~~|1*<br>~~}—+—~~<br>~~Pf~~||
|~~**Diode** continuous forward current ~~<br>~~Reverserecoverytime~~|)H9<br> ~~ese~~<br>~~P|~~|)=H<br>$<<br>(V<br>~~ese |~~<br>=25<br>°C<br>~~P|~~<br>=40V,<br>=12A,|%<br>~~| }—+—~~<br>~~Pf]~~|(&1<br>~~}—+—~~<br>~~Pf]~~|)&*<br>~~}—+—~~<br>~~Pf]~~|J|
|~~Reverserecoverytime~~<br>~~Reverserecoverycharge~~|.^^<br>~~P|~~<br>~~P|~~|)G<br>$<<br>P-<'P.<br>C<br>~~P|~~<br>=40V,<br>=12A, <br>~~P|~~<br>~~=100 Al~~|%<br>~~Pf]~~<br>~~Pf]~~|,+<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~|Z_|
|~~Reverse recovery time~~<br>~~Reverserecoverycharge~~|&^^<br>~~P|~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf]~~|,)<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~|Z8|
|-#<br>~~Reverse recovery charge~~<br>~~P|~~<br>~~=100 Al Pf]~~<br>See figure 16 for gate charge parameter definition|||||||
% `[`4R"( 8#
**==> picture [22 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
+=398<br>**----- End of picture text -----**<br>
$ 94R"( 8 ); ) =H"
**==> picture [424 x 557] intentionally omitted <==**
**----- Start of picture text -----**<br>
+' ),<br>)'<br>*'<br>(,<br>)'<br>('<br>('<br>,<br>| ' Tht | ' i<br>' ), ,' ., ('' (), (,' (., ' ), ,' ., ('' (), (,' (.,<br>& 3 [°C] & 3 PC]<br>afeo erating area 4 Max. transient thermal im /.+8-/<br>4R") 9H) 9H 9H 3 ( 8 8 =25 °C; " 4( 4( * `T@84R". \#<br>parameter: . \ parameter: " 4. \'(<br>(' [)] ('<br>1 C<br>limited by on-state<br>^Q_U_`MZOQ<br>(&-<br>aN 10 C<br>(' [(] (<br>(&*<br>100 C<br>< z (&)<br>(&(-<br>(&(*<br>(' ['] '%(<br>(&()<br>1ms<br>single pulse<br>10 ms<br>98<br>(' [$(] '%'( ' ' ' ' ' ' (<br>(' [$(] (' ['] (' [(] (' [)] (' [$-] (' [$,] (' [$+] (' [$*] (' [$)] (' [$(] (' [']<br>' 4@ * V<br>*<br># YUY " 4<br>*<br>" 4<br> YN83<br>(<br>**----- End of picture text -----**<br>
$ 94R") 9H) 9H 9H 3 ( 8 8 =25 °C; " 4( 4(
**==> picture [9 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
B:<br>**----- End of picture text -----**<br>
**==> picture [9 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
B:<br>**----- End of picture text -----**<br>
**==> picture [429 x 597] intentionally omitted <==**
**----- Start of picture text -----**<br>
$ 94R") 9H ); ( V =25°C ' 9H"[Z#4R"$ 9 ); ( V =25°C<br>parameter: ) =H parameter: ) =H<br>('' .'<br>9V 8Vyan 5V 55V lev Tv 8V<br>/' -'<br>-' G ,'<br>Zz De c=<br>+' +'<br>VV<br>9V<br>)' j *'<br>55 V a 10V<br>5 _|<br>OE<br>' )'<br>' ( ) * + , ' )' +' -' /' (''<br>' 4@ [V] " 4 [A]<br>7 B: . transfer characteristics 8 B: . forward transconductance<br>$ 94R") =H )s | 9H [g5*g][$] 9 [g]['] 9H"[Z#YMd , R_4R"$ 9 ), ( V =25°C<br>parameter: ( V<br>*' +'<br>),<br>*'<br>)'<br>| (, | )'<br>('<br>('<br>,<br>' '<br>' ( ) * + , - . ' (' )' *' +' ,'<br>' 7@ " 4<br>F<br>" 4<br> 4@!UT"<br>%<br>*<br>" 4 ) LX<br>**----- End of picture text -----**<br>
## B:
' 9H"[Z#4R"( V ); $ 9 =12A; ) =H =10V ) =H"`T#4R"( V ); ) =H4) 9H
**==> picture [425 x 559] intentionally omitted <==**
**----- Start of picture text -----**<br>
-' +<br>,,<br>,'<br>*<br>120 A<br>+,<br>12 A<br>Gq +' YMd =<br>*, )<br>*' `e\<br>),<br>(<br>)'<br>(,<br>(' '<br>$-' $)' )' -' ('' (+' (/' $-' $)' )' -' ('' (+' (/'<br>& P [°C] & P [°C]<br>B: .ca +-3=+8-/< 12 Forward characteristics of reverse diode<br> 4R") 9H) 9H 9H =O; ) =H =H + =1 " J $ <4R") H9#<br>parameter: ( V<br>(' [+] (''<br>)-(p8$YMd<br>150 °C<br>(' [*]<br>8U__<br>*-p8$YMd<br>(' [)] 8[__ ('<br>(' [(]<br>8^__<br>(' ['] (<br>' )' +' -' /' '%' '%, (%' (%, )%'<br>' 4@ [V] ' @4 IV]<br>F<br>ES<br> 4@!UT" ' 7@!YN"<br>%<br>! " 6<br>**----- End of picture text -----**<br>
11 B: .ca +-3=+8-/< ! 4R") 9H) 9H 9H =O; ) =H =H + =1 " J
**==> picture [424 x 614] intentionally omitted <==**
**----- Start of picture text -----**<br>
13 Avalanche characteristics 14 B: . gate charge<br>$ 6H4R". 6J ); ' =H =25 " ) =H4R"& SM`Q ); $ 9 =12 A pulsed<br>parameter: ( V"_`M^`# parameter: ) 99<br>('' ()<br>40V<br>('<br>16V Sav<br>/<br>< 5<br>(' -<br>125°C | 100°C 25 °C +<br>)<br>( '<br>'%( ( (' ('' (''' ' ( ) * + , - . /<br>* 1C [us] $ MGYK [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>) 7G"9HH#4R"( V ); $ 9 =1mA<br>(''<br>' =H<br>0' & , ,<br>/'<br>|<br>.'<br>) S _"`T#<br>-'<br>,'<br>& S"`T# & _c _c $ MGYK<br>+' & S_ S_ & SP SP<br>$-' $)' )' -' ('' (+' (/'<br>& P |<br>" 1C ' 7@<br> 2?!4@@"<br>'<br>**----- End of picture text -----**<br>
**==> picture [187 x 207] intentionally omitted <==**
**----- Start of picture text -----**<br>
' =H<br>& , ,<br>) S _"`T#<br>& S"`T# & _c _c $ MGYK<br>& S_ S_ & SP SP<br>**----- End of picture text -----**<br>
>7$A4@=<$/
For -@9AB?4D=A@ further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
the 34B@=@;C types
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →