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BSC220N20NSFDATMA1
Power MOSFET, N Channel, 200 V, 52 A, 0.0177 ohm, TSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 3
- Qualification: -
- Power Dissipation: 214W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 214W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0177ohm
- Transistor Case Style: TSON
- Drain Source Voltage Vds: 200V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 52A
- Drain Source On State Resistance: 0.0177ohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.74 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BSC220N20NSFD**
## **MOSFET**
## **OptiMOS[TM]**
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**----- Start of picture text -----**<br>
Features ¢<br>N-channel, normal level<br>¢ 175 °C rated<br>« Excellent gate charge x R DS(on)<br>* Very low on-resistance R DS(on)<br>**----- End of picture text -----**<br>
JEDEC47/20/22
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**----- Start of picture text -----**<br>
Parameter 1 Key Performance Value Parameters Unit<br>V DS 200 V<br>R DS(on),max 22 m Ω<br>I D 52 A<br>**----- End of picture text -----**<br>
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TSON-8-3<br>8<br>7 5<br>6 6<br>5 7 8<br>y -—<br>Pin 1<br>2 4<br>3 3<br>4 2<br>1<br>S 1 8 D<br>S 2 7 D<br>T i l<br>S 3 | ( =) i 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br>
## ~~Type/OrderingCode |[|__|]~~ **Package Marking**[ Related][Links] BSC220N20NSFD TSON-8-3 220N20F -
Final Data Sheet
1
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC220N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.0,��2018-03-14
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC220N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|52<br>41|A|_T_C=25°C<br>_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|208|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|214|mJ|_I_D=38A,_R_GS=25Ω|
|Reversediodepeakd_v_/d_t_|d_v_/d_t_|-|-|60|kV/µs|_I_D=52A,_V_DS=100V,<br>d_i_/d_t_=1500A/µs,_T_j,max=175°C|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|214|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category;<br>DIN IEC 68-1: 55/175/56|
## **2�����Thermal�characteristics**
Tj=25 °C, unless otherwise specified
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.4|0.7|K/W|-|
|Thermal resistance, junction - ambient,<br>minimal footprint|_R_thJA|-|-|75|K/W|-|
|Thermal resistance, junction - ambient,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|
> 1) See Diagram 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Final Data Sheet
3
Rev.�2.0,��2018-03-14
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC220N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|200|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2|3|4|V|_V_DS=_V_GS,_I_D=137µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=160V,_V_GS=0V,_T_j=25°C<br>_V_DS=160V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|17.7|22|mΩ|_V_GS=10V,_I_D=52A|
|Gate resistance1)|_R_G|-|3.7|5.5|Ω|-|
|Transconductance|_g_fs|44|88|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=52A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2770|3680|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|210|279|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Reverse transfer capacitance1)|_C_rss|-|5.7|10|pF|_V_GS=0V,_V_DS=100V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|7|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|7|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|28|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|10|-|ns|_V_DD=100V,_V_GS=10V,_I_D=17A,<br>_R_G,ext=1.6Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|13.1|-|nC|_V_DD=100V,_I_D=52A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|4.4|7|nC|_V_DD=100V,_I_D=52A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|9.2|-|nC|_V_DD=100V,_I_D=52A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|34|43|nC|_V_DD=100V,_I_D=52A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.7|-|V|_V_DD=100V,_I_D=52A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|84|111|nC|_V_DD=100V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.0,��2018-03-14
4
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC220N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|52|A|_T_C=25°C|
|Diode pulse current1)|_I_S,pulse|-|-|208|A|_T_C=25°C|
|Diode hard commutation current2)|_I_S,hard|-|-|52|A|_TC=25°C,_d_i_F/d_t_=1500A/µs|
|Diode forward voltage|_V_SD|-|1.0|1.2|V|_V_GS=0V,_I_F=52A,_T_j=25°C|
|Reverse recovery time3)|_t_rr|-|89|-|ns|_V_R=100V,_I_F=_12.5A_,<br>d_i_F/d_t_=100A/µs|
|Reverse recovery charge3)|_Q_rr|-|195|-|nC|_V_R=100V,_I_F=_12.5A_,<br>d_i_F/d_t_=100A/µs|
> 1) Diode pulse current is defined by thermal and/or package limits
2) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs 3) Defined by design. Not subject to production test.
Final Data Sheet
Rev.�2.0,��2018-03-14
5
**OptiMOS[TM] BSC220N20NSFD**
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10 [3] 10 [1]<br>Ta eeT ee ee ee CT TT oT TTT TTTTTTTTT<br>1 µs TH a el<br>10 [2] Ha ee SHNe 10 µs alll CPM CTCL<br>100 µs 10 [0]<br>1 ms<br>—_ 0.5 PUTT ee TL ee TT tT<br>10 [1] 10 ms<br>eA<br>0.2<br>To co <r<br>DC<br>Saar 10 [-1] 0.1<br>fo [pre] me ANE Pfci | SnF tmicgee (CE IN<br>0.05<br>10 [0]<br>0.02<br>Cr t-ttttie ttttie tfttfNWNI VIL 0.01 Z|<br>single pulse<br>SSS | <TC TT PCT<br>EEE ‘\<br>10 [-1] CEPA CNN 10 [-2] TUL LAL LETT EEE LT<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS Iv] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC220N20NSFD**
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60 60<br>7 V<br>10 V<br>5040 pf | Pf ft 5040 |]] tftdebid<br>5 V<br>4.5 V<br>30 4.5 V 30<br>5 V<br>20 an oe 20 7 V<br>10 V<br>10 Pool Lo) RR 10<br>Po ] tb<br>0 0<br>0 1 2 3 4 5 0 10 20 30 40 50 60 70<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>80 110<br>TTTTTPETT) 100 DDD pp Lo<br>70<br>90<br>a ee ee | ee 4<br>|<br>60<br>80<br>50 | | | fff | | 70 Ae<br>i [P|]<br>TTT} 60 ToOY<br>40<br>50<br>ee ee eee y,<br>30 Seee eee } 40 OYAe<br>30<br>20 175 °C<br>fpFS [fo fitee<br>20<br>10 a | | jf.<br>10<br>25 °C<br>0 PFS |A PF HE| | | 0 OP<br>0 2 4 6 8 0 25 50 75<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC220N20NSFD**
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120 PE Lt eT Ey yy EI 4.0 fttpt<br>3.5<br>100 CEPT tt tt tt<br> TTT |) EEE<br>1370 µA<br>3.0<br>PEE Se<br>80 PE T T ETT TTEy T yyTy sesft} 137 µA teas tt<br>2.5<br>0<br>— EeePC<br>60 PELPE tT teTe TETEY |EE Re 2.0 (EPfiftyeSeN SN EN<br>1.5<br>40 CCT ttt tt iN<br>er) GEES<br>98% an EEE<br>Pit | | | eee 1.0 TEPer<br>typ<br>20 ae =2eneee fitip<br>0.5<br>B=ae pt | | | dPtpt| ttt<br>EPP<br>0 PET TTT ET TET ey 0.0 EEEer r ry 4<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>a eG GO OO | ue —————<br>25 °C<br>175 °C<br>Ciss<br>NOTEA A a eo ot LJ 25°C, 98% aee eeeeee eeeee eeeee<br>———NP rrr——— — | 175°C, 98% — ee————ee<br>10 [3] PASCCEEEEE Ee ioe e e<br>10 [2]<br>Sees Ll |let<br>e Coss S ———|<br>10 [2]<br>=== ee ee ee eeeeee<br>NB ee<br>10 [1]<br>|}eeIN | | ThE | rE rT TE | tT | COpf _fy _ ff}<br>BER NSeeeeeeeeeee OS| OY A e _{__}|__}__|<br>10 [1]<br>Crss<br>A ae e —+—_ 4-1<br>10 [0] 10 [0]<br>PEERS | gi<br>0 40 80 120 160 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM]** 3 **BSC220N20NSFD**
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10 [2] A OO OO 10 /<br>a a a ee y<br>a a ny Ae<br>a a J<br>Pr ee ae<br>8<br>| y A<br>160 V<br>NUTTIN N TT TTT ),<br>25 °C TTT 100 V<br>PINNUITIE N\ [ONT] \<br>MINIS 6 [ii<br>40 V<br>10 [1] PENCUMIN\ TINNNTLIN = Le7yt it<br>< a a eee fe EE E ATT<br>Poa a TTT eeNETTING TTTN 4 | 7 st] yf fof<br>commainet<br>100 °C<br>2<br>Settee te] Lt TT |<br>CLUE IN ny A<br>TE LETIIE ISSUTT /<br>150 °C<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40<br>t AV [us] Q gate [nc]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AS V GS<br>**----- End of picture text -----**<br>
## **Diagram Gate charge waveforms**
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**----- Start of picture text -----**<br>
230<br>sO<br>A<br>a<br>a<br>220 A<br>es<br>2<br>210 7<br>- -EEPPPTTAsTE<br>a 7Te<br>2<br>2<br>200 7<br>i<br>7<br>0<br>a2<br>190 i 074 a<br>PA<br>SOa<br>A<br>A<br>180<br>-60 -20 20 60 100 140 180<br>T j [Cl<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] 3�Power-Transistor,�200�V BSC220N20NSFD**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
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MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A - 1.10<br>b 0.34 0.54<br>b1 - 0.05<br>c 0.20<br>D 4.90 5.10<br>D1 4.25 4.45<br>E 5.90 6.10<br>E1 4.00 4.20<br>E2 3.14 3.34<br>E3 0.20 0.40<br>e 1.27<br>K2 (0.37)<br>L 0.60 0.80<br>L1 0.43 0.63<br>L2 (0.25)<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00187559<br>REVISION<br>01<br>SCALE 10:1<br>0 1 2mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>14.12.2017<br>**----- End of picture text -----**<br>
**Figure�1�����Outline�TSON-8-3,�dimensions�in�mm/inches**
Final Data Sheet
10
Rev.�2.0,��2018-03-14
**OptiMOS[TM] BSC220N20NSFD**
## BSC220N20NSFD
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-03-14|Release of final version|
## **erratum@infineon.com**
## **Information**
**www.infineon.com** ).
## **Warnings**
Final Data Sheet
11
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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