Image not available
Illustrative purposes only
BSC160N15NS5ATMA1
Power MOSFET, N Channel, 150 V, 56 A, 0.016 ohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0137ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 96W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 56A
- Drain Source On State Resistance: 0.016ohm
- Gate Source Threshold Voltage Max: 3.8V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 1.19 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC160N15NS5**
## **MOSFET**
## **OptiMOS[TM]**
## **Features**
_R_ DS(on) _R_ DS(on)
|**Parameter**<br>Table 1<br>Key Performance|**Value**<br>Performance Parameters|**Unit**<br>Parameters|
|---|---|---|
|_V_DS|150|V|
|_R_DS(on),max|16|mΩ|
|_I_D|56|A|
|_Qrr_|26|nC|
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**----- Start of picture text -----**<br>
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|~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSC160N15NS5<br>~~Type/OrderingCode |~~|PG-TDSON-8<br>~~|~~<br>~~|~~|160N15NS|-<br>~~Related Links~~|
1) J-STD20 and JESD22
Final Data Sheet
1
**OptiMOS[TM] �5�Power-Transistor,�150�V BSC160N15NS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.�2.2,��2016-01-22
**OptiMOS[TM] �5�Power-Transistor,�150�V BSC160N15NS5**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|56<br>36|A|_T_C=25°C<br>_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|224|A|_T_C=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|43|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|96|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.78|1.3|K/W|-|
|Thermal resistance, junction - ambient,<br>6 cm2cooling area3)|_R_thJA|-|-|50|K/W|-|
## **3�����Electrical�characteristics**
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|150|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|3.0|3.8|4.6|V|_V_DS=_V_GS,_I_D=60µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=120V,_V_GS=0V,_T_j=25°C<br>_V_DS=120V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|13.7<br>15.1|16<br>18.5|mΩ|_V_GS=10V,_I_D=28A,<br>_V_GS=8V,_I_D=14A|
|Gate resistance4)|_R_G|-|1|1.5|Ω|-|
|Transconductance|_g_fs|20|40|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=28A|
- 1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
4) Defined by design. Not subject to production test
Final Data Sheet
3
Rev.�2.2,��2016-01-22
**OptiMOS[TM] �5�Power-Transistor,�150�V BSC160N15NS5**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1370|1820|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|341|454|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Reverse transfer capacitance1)|_C_rss|-|9.6|17|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|9.6|-|ns|_V_DD=75V,_V_GS=10V,_I_D=28A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|3|-|ns|_V_DD=75V,_V_GS=10V,_I_D=28A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|10.8|-|ns|_V_DD=75V,_V_GS=10V,_I_D=28A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|2.6|-|ns|_V_DD=75V,_V_GS=10V,_I_D=28A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|8|-|nC|_V_DD=75V,_I_D=28A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|4|5.9|nC|_V_DD=75V,_I_D=28A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|7.8|-|nC|_V_DD=75V,_I_D=28A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|19|23.1|nC|_V_DD=75V,_I_D=28A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.8|-|V|_V_DD=75V,_I_D=28A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|51|68.2|nC|_V_DD=75V,_V_GS=0V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|56|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|224|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.88|1.2|V|_V_GS=0V,_I_F=28A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|30.5|61|ns|_V_R=75V,_I_F=_28_,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|25.7|51.4|nC|_V_R=75V,_I_F=_28_,d_i_F/d_t_=100A/µs|
> 1) Defined by design. Not subject to production test
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.2,��2016-01-22
4
**OptiMOS[TM] BSC160N15NS5**
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**----- Start of picture text -----**<br>
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Final Data Sheet
5
**OptiMOS[TM] BSC160N15NS5**
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**----- Start of picture text -----**<br>
280 50<br>Pe) On<br>240 Peer<br>10V 40<br>200 Soe)ry Ty LR eeeyy | CUE|<br>5.5 V<br>pitti tt A 8 V 30 J fo<br>160 eee 46S ee 7 6 V<br>6.5 V<br>2 CYT fe LE<br>120<br>Ye } 20 Cee 7 V<br>pit vel tt 7 V ee 8 V<br>80<br>Aff oo oe<br>10 V<br>6.5 V<br>10<br>Pe |<br>40 Yes) 6 V<br>, pa<br>5.5 V<br>SS ee eee<br>0 0<br>0 1 2 3 4 5 6 7 0 10 20 30 40 50 60<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>80 100<br>TTT .LLLI| Wee<br>80<br>PP [ fe<br>60<br>a TETAenEy) HH eacaanaanet<br>60<br>ei] 40 BERBER A0RRREUE<br> Ut fe Lee<br>[UUtT ey) 40 LA<br>| BP 40RRRRRRREE<br>20<br>PELE 20 [<br>ee EEL) 150 °C ye<br>25 °C<br>S| ADDSRRRREEEEEEEE<br>0 0<br>0 Coot 2 4 [ge] 6 ee 8 0 i 20 ninnnnnnnnnnn 40 60 80 100 120 140 160<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC160N15NS5**
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**----- Start of picture text -----**<br>
403530 Fy]Fy) tLtity yyy yy 5.55.04.5 PT Pt ttetPE te tTtePPte Pyete e y TT<br>600 µA<br>25 CCT 4.0 Jt tT | EP<br>LS|) BRRREEEEE<br>max 60 µA<br>20 ef] ) lpr S| 3.5 A LEKTX<br>15 | | |4Dee typ ZL| ee 3.0 [yyeeeed PP ISN<br>10 p04| et} | 2.5 etPt tePe tete tT eePetT ENS|<br>5 SER 2.0 PT ee te te ee<br>0 Fy] tty yyy 1.5 ePPT t tteeETTte e Eepeet etey eeee<br>-60 -20 20 60 100 140 -60 -20 20 60 100 140<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS I D<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>=S5S======——===——=== — 25 °C ——<br>SS : 150 °C ———————<br>25°C max<br>150°C max<br>| {| [| | | ft ft tT tt tT tt tt Ciss — —————<br>BE)<br>10 [3]<br>Nee | e e ee<br>Coss 10 [2]<br>POE EEE | ES ff<br>BN 10 [2] jg<br>pERR[ | TTREEART ESSERETT pt ttEEEtp tt ESSE eeee eee<br>10 [1]<br>ptt ft fit eft PT Crss Tt ———_— ———————————<br>10 [1] nn ——--<br>—Hp a|<br>10 [0] 10 [0]<br>0 cooper 20 40 60 80 100 | 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC160N15NS5**
**==> picture [526 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] OO OO OOO GO OO 10 f<br>a ee ee ee<br>-——-Ft FH ++ HHH —] | |) | Lf<br>a<br>NNT [NTT] 8 eens/ 120 V<br>75 V<br>25 °C 30 V<br>S E | ff | Ly<br>100 °C<br>NING eaalll Yy<br>6<br>125 °C<br>z 10 [1] aa eeeeNOONXL eeeeWl SE fe E E~ |<br>aa Se 4 7] ,FE | fff<br>| A<br>TN Ane<br>2<br>LEHANE ETHIE EONUIIT /<br>OTM ‘\ Att| tt<br>10 [0] LLANE ELI 0 /\| i fi ft | ft<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AS V GS<br>**----- End of picture text -----**<br>
PT Gate charge waveforms
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**----- Start of picture text -----**<br>
160 PT | tT | tT tT tt tt<br>ee eee<br>Pt | | | ft | rt | ld CU<br>Pt | f | fT | tl] UY<br>155 |PT| || tT| || ftEt| rEPAyy<br>me ae<br>Pt | fT | EP Uy | Tt<br>S P| | | | Yt | | tf | ft<br>a 150 ee 4<br>PT | TAT Tt tT tt<br>rT | yy] TT tT tT tt<br>rT YT | tT | tt tT tt<br>Piz, | | |<br>145 [AmT _ || [|tT || |Et| ftET| lt |<br>PT | tT | tT ty et tT tt<br>PT | tT | tT ty et tT tt<br>PT | tT | tT ty et tT tt<br>140 Pf | — | f | ft | tf] ft<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] BSC160N15NS5**
Final Data Sheet
9
**OptiMOS[TM] BSC160N15NS5**
## BSC160N15NS5
## Previous Revision
|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2015-09-23|Release of final version|
|2.1|2015-10-12|Rev. 2.1|
|2.2|2016-01-22|Update Diagram 13|
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
10
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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