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BSC160N10NS3GATMA1
Power MOSFET, N Channel, 100 V, 42 A, 0.016 ohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0139ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 60W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 42A
- Drain Source On State Resistance: 0.016ohm
- Gate Source Threshold Voltage Max: 2.7V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.451 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
~~C~~ Type ~~*[In]~~[fineon] **BSC160N10NS3 G** ## $(*'#$% **[TM] 3 Power-Transistor** |**Product Summary**|**Product Summary**|**Product Summary**| |---|---|---| |||| |_V_DS|100|V| |||| |_R_DS(on),max|16|m#| |||| |_I_D|42|A| _R_ DS(on) product (FOM) _R_ DS(on) ## PG-TDSON-8 1) for target application |||| |---|---|---| |**Type**|**Package**|**Marking**| |||| |BSC160N10NS3 G|PG-TDSON-8|160N10NS| **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified |**Parameter**|**Symbol **|**Conditions**|**Value**|**Unit**| |---|---|---|---|---| |Continuous drain current|_I_D|_T_C=25 °C|42|A| |||_T_C=100 °C|27|| |||_T_A=25 °C,<br>_R_thJA=50 K/W2)|8.8|| |Pulsed drain current3)|_I_D,pulse|_T_C=25 °C|168|| |Avalanche energy, single pulse|_E_AS|_I_D=33 A,_R_GS=25#|50|mJ| |Gate source voltage|_V_GS||±20|V| |Power dissipation|_P_tot|_T_C=25 °C|60|W| |Operating and storage temperature|_T_j,_T_stg||-55 ... 150|°C| |IEC climatic category; DIN IEC 68-1|||55/150/56|| Rev. 2.4 page 1 2009-10-30 **BSC160N10NS3 G** **Parameter Symbol Conditions Values Unit min. typ. max.** ~~ee~~ **Thermal characteristics** Thermal resistance, junction - case _R_ thJC - - 2.1 K/W Thermal resistance, _R_ thJA 6 cm[2] cooling area[2)] - - 50 ~~oT junction - ambient~~ **Electrical characteristics,** at _T_ j=25 °C, unless otherwise specified ## **Static characteristics** |**Static characteristics**||| |---|---|---| |Drain-source breakdown voltage<br>Gate threshold voltage|_V_(BR)DSS _V_GS=0 V,_I_D=1 mA<br>100<br>-<br>-<br>_V_GS(th)<br>_V_DS=_V_GS,_I_D=33 µA<br>2<br>2.7<br>3.5<br>~~ee~~<br>~~ee ee~~<br>~~|~~|V| |Zero gate voltage drain current<br>Gate-source leakage current|_I_DSS<br>_V_DS=100 V,_V_GS=0 V,<br>_T_j=25 °C<br>-<br>0.01<br>1<br>_V_DS=100 V,_V_GS=0 V,<br>_T_j=125 °C<br>-<br>10<br>100<br>_I_GSS<br>_V_GS=20 V,_V_DS=0 V<br>-<br>1<br>100<br>~~een~~<br>~~ft~~<br>~~|~~|µA<br>nA| |Drain-source on-state resistance<br>Gate resistance|_R_DS(on)<br>_V_GS=10 V,_I_D=33 A<br>-<br>13.9<br>16<br>_V_GS=6 V,_I_D=16 A<br>-<br>17.6<br>33<br>_R_G<br>-<br>1.4<br>-<br>~~ee~~<br>~~|~~|m#<br>#| |Transconductance|_g_fs<br>|_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=33 A<br>21<br>42<br>-<br>~~et~~<br>~~ft|~~|S| ## 1)J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 Rev. 2.4 page 2 2009-10-30 |**BSC160N10NS3 G**<br>~~Cinfineon~~|**BSC160N10NS3 G**<br>~~Cinfineon~~|**BSC160N10NS3 G**<br>~~Cinfineon~~|**BSC160N10NS3 G**<br>~~Cinfineon~~|**BSC160N10NS3 G**<br>~~Cinfineon~~|**BSC160N10NS3 G**<br>~~Cinfineon~~|**BSC160N10NS3 G**<br>~~Cinfineon~~| |---|---|---|---|---|---|---| |~~Cinfineon~~<br>~~ee eeee~~||||||| |**Parameter**<br>~~ee ee~~|**Symbol **<br>~~ee~~|**Conditions**<br>~~ee~~|**Values**<br>~~ee~~|||**Unit**| ||||**min.**<br>~~ee~~|**typ.**<br>~~ee~~|**max.**|| |**Dynamic characteristics**<br>~~ee ee ee~~||||||| |Input capacitance|_C_iss|_V_GS=0 V,_V_DS=50 V,<br>_f_=1 MHz|-|1300|1700|pF| |Output capacitance|_C_oss||-|240|320|| |Reverse transfer capacitance|_C_rss||-|11|-|| |Turn-on delay time|_t_d(on)|_V_DD=50 V,_V_GS=10 V,<br>_I_D=16 A,_R_G=1.6#|-|13|-|ns| |Rise time|_t_r||-|15|-|| |Turn-off delay time|_t_d(off)||-|22|-|| |Fall time|_t_f||-|5|-|| |Gate Charge Characteristics4)||||||| |Gate to source charge|_Q_gs|_V_DD=50 V,_I_D=16 A,<br>_V_GS=0 to 10 V|-|6|-|nC| |Gate to drain charge|_Q_gd||-|3|-|| |Switching charge|_Q_sw||-|5|-|| |Gate charge total|_Q_g||-|19|25|| |Gate plateau voltage|_V_plateau||-|4.4|-|V| |Output charge|_Q_oss|_V_DD=50 V,_V_GS=0 V|-|25|33|nC| |**Reverse Diode**||||||| |Diode continous forward current|_I_S|_T_C=25 °C|-|-|42|A| |Diode pulse current|_I_S,pulse||-|-|168|| |Diode forward voltage|_V_SD|_V_GS=0 V,_I_F=33 A,<br>_T_j=25 °C|-|1|1.2|V| |Reverse recovery time|_t_rr|_V_R=50 V,_I_F=16A,<br>d_i_F/d_t_=100 A/µs|-|53||ns| |Reverse recovery charge|_Q_rr||-|83|-|nC| |4)See figure 16 for gate charge parameter definition||||||| 4) See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2009-10-30 **BSC160N10NS3 G** ## **1 Power dissipation** _P_ tot=f( _T_ C) ## **2 Drain current** _I_ D=f( _T_ C); _V_ GS **==> picture [465 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 70 50<br>60<br>40<br>50<br>30<br>40<br>30<br>20<br>20<br>10<br>10<br>0 0<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br> [W]<br> [A]<br>P tot I D<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p ## **4 Max. transient thermal impedance** _Z_ thJC=f( _t_ p) parameter: _D_ = _t_ p/ _T_ **==> picture [226 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3]<br>100 ns<br>10 [2] 1 µs<br>10 µs<br>10 [1] 100 µs<br>1 ms<br>DC<br>10 [0]<br>10 [-1]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3]<br>V DS [V]<br> [A]<br>I D<br>**----- End of picture text -----**<br> **==> picture [225 x 269] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>0.5<br>10 [0]<br>0.2<br>0.1<br>0.05<br>0.02<br>10 [-1] 4 0.01<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t p [s]<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> Rev. 2.4 page 4 2009-10-30 **BSC160N10NS3 G** ## **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [466 x 609] intentionally omitted <==** **----- Start of picture text -----**<br> 120 30<br>4.5 V<br>10 V<br>100 25 5 V<br>7 V<br>5.5 V<br>6 V 6 V<br>80 20<br>7 V<br>60 15<br>10 V<br>5.5 V<br>L)<br>40 10<br>5 V<br>"a<br>20 5<br>4.5 V<br>f - —<br>0 0<br>0 1 2 3 0 20 40 60 80 100<br>V DS [V] I D [A]<br>7 Typ. transfer characteristics 8 Typ. forward transconductance<br>=f( V GS); |); | V DS|>2||>2| I D|| R DS(on)max g fs=f( I D); T j=25 °C<br>parameter: T j<br>80 80<br>60 60<br>40 40<br>|Z<br>20 20<br>150 °C 25 °C<br>0 0<br>0 1 2 3 4 5 6 7 0 20 40 60 80 100<br>V GS [V] I D [A]<br>]<br>[m<br> [A]<br>I D<br>DS(on)<br>R<br> [A] [S]<br>I D g fs<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); |); | _V_ DS|>2||>2| _I_ D|| _R_ DS(on)max parameter: _T_ j Rev. 2.4 2009-10-30 page 5 **BSC160N10NS3 G** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=33 A; _V_ GS=10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS parameter: _I_ D **==> picture [465 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 35 4<br>30 3.5<br>3<br>25 330 µA<br>2.5<br>33 µA<br>20<br>p a<br>98 %<br>2<br>15 typ<br>1.5<br>4<br>10<br>1<br>5<br>0.5<br>0 if 0 :<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>11 Typ. capacitances 12 Forward characteristics of reverse diode<br> =f( V DS);); V GS=0 V;=0 V; f =1 MHz I F=f( V SD)<br>parameter: T j<br>10 [4] 1000<br>Ciss<br>10 [3]<br>e e :<br>100<br>Coss<br>25 °C<br>10 [2]<br>150 °C, 98%<br>Crss 10<br>150 °C<br>10 [1]<br>25 °C, 98%<br>10 [0] Sooif 1 t f<br>0 20 40 60 80 0 0.5 1 1.5 2<br>V DS [V] V SD [V]<br>]<br> [m [V]<br>DS(on) GS(th)<br>R V<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS);); _V_ GS=0 V;=0 V; _f_ =1 MHz Rev. 2.4 page 6 2009-10-30 **BSC160N10NS3 G** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 # parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=16 A pulsed parameter: _V_ DD **==> picture [224 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8 80 V<br>50 V<br>6<br>20 V<br>4<br>2<br>0<br>0 5 10 15 20<br>Q gate [nC]<br> [V]<br>GS<br>V<br>**----- End of picture text -----**<br> ## **15 Drain-source breakdown voltage** **16 Gate charge waveforms** _V_ BR(DSS)=f( _T_ j); _I_ D=1 mA **==> picture [226 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>105<br>100<br>ye<br>95<br>90<br>-60 -20 20 60 100 140 180<br>T j [°C]<br> [V]<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> **BSC160N10NS3 G** ## **Package Outline: PG-TDSON-8** Rev. 2.4 page 8 2009-10-30 **BSC160N10NS3 G** Dimensions in mm Rev. 2.4 page 9 2009-10-30 **BSC160N10NS3 G** ~~Te~~ ' chnologies Rev. 2.4 page 10 2009-10-30
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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