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BSC155N06NDATMA1
Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.0155 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS-T2 Series
- Qualification: -
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 20A
- Power Dissipation N Channel: 50W
- Power Dissipation P Channel: 50W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 20A
- Continuous Drain Current Id P Channel: 20A
- Drain Source On State Resistance N Channel: 0.0155ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.431 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC155N06ND**
## **MOSFET**
## **OptiMOS[TM]**
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OptiMOS -T2 Power Transistor, 60 V PG-TDSON-8-4<br>8 1<br>Features 7 2<br>6 5 3 4<br>- Dual N-channel,Normal Level<br>- Fast switching MOSFETs<br>- 175°C operating temperature<br>- Green product (RoHS compliant) 1 8<br>- 100% Avalanche tested 2 7<br>3 6<br>- Optimized technology for drives applications 4 5<br>- Halogen-free according to IEC61249-2-21<br>- Superior thermal resistance<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22 D1 D1 D2 D2<br>8 7 6 5<br>Parameter Value Unit<br>Table 1 Key Performance Parameters ia, |<br>V DS 60 V S1 G1 S2 G2<br>R DS(on),max 15.5 m Ω<br>I D 20 A<br>— - | .H<br>(PB) C<br>Package Marking<br>Type/OrderingCode | | Related Links<br>BSC155N06ND SSO8 dual (TDSON-8-4) 155N06ND -<br>**----- End of picture text -----**<br>
## **Features**
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Parameter Value Unit<br>Table 1 Key Performance Parameters<br>V DS 60 V<br>R DS(on),max 15.5 m Ω<br>I D 20 A<br>—<br>**----- End of picture text -----**<br>
Final Data Sheet
1
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC155N06ND**
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## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.�2.0,��2018-12-11
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC155N06ND**
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## **1�����Maximum�ratings**
at� _T_ A=25�°C,�unless�otherwise�specified,�one�transistor�active
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-|-|20|A|_V_GS=10V,_T_C=25°C|
|Pulsed drain current1)|_ID,pulse_|-|-|80|A|_T_A=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|40|mJ|_I_D=10A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|50|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|3|°C/W|-|
|Device on PCB,<br>6 cm² cooling area3)|_R_thJA|-|-|60|°C/W|-|
|Device on PCB,<br>minimal footprint4)|_R_thJA|-|-|100|°C/W|-|
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.0|3.0|4.0|V|_V_DS=_V_GS,_I_D=20µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|12.9|15.5|mΩ|_V_GS=10V,_I_D=17A|
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
4) device mounted on a minimum pad (one layer, 70 µm thick)
Final Data Sheet
3
Rev.�2.0,��2018-12-11
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC155N06ND**
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## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|1730|2250|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|380|490|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|15|30|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Rise time|_t_r|-|2|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Turn-off delay time|_t_d(off)|-|19|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Fall time|_t_f|-|9|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|9|12|nC|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|2.0|4|nC|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|21|29|nC|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.3|-|V|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|20|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|80|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.91|1.1|V|_V_GS=0V,_I_F=17A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|35|-|ns|_V_R=15V,_I_F=9A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|35|-|nC|_V_R=15V,_I_F=9A,d_i_F/d_t_=100A/µs|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.0,��2018-12-11
4
**OptiMOS[TM] BSC155N06ND**
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60 50<br>es ee es rr . .. . - ff]<br>50 [$$ | + silicon limit ee ee ee ee ee ee<br>40<br>—_ &_—————— | | | | |<br>Ne ee TT | INC<br>40 NEEa OS a P N<br>30<br>Nr — {Nr<br>== 30 + KK + —} xta eea ee a Ne ee ee<br>Ce NG i<br>20 package limit<br>20 a a rf, | [| |. | \ | 1<br>A a<br>10<br>10 se es eC ee ee ee ee ee<br>Ee i<br>0 a 0 r | | | |. | | | 7<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T A [°C] T A [°C]<br>P tot=f( T A I D=f( T A<br>P tot I D<br>**----- End of picture text -----**<br>
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10 [2] 10 [1]<br>1 µs single pulse<br>10 µs 0.01<br>|POtT TT TT 10 ms ONSETINTE GaalTH (||| 0.02 aTE Ta eeTee<br>0.05<br>al l DC ENT NLL I 0.1 Ht kt<br>100 µs<br>0.2<br>10 [1] ATI TANI TTT | 0.5 CheeTT r<br>7 NNN ANT 10 [0] TT e e<br>7 \ \ a a eS a Aee<br>1 ms<br>_ OCT IN ENT — S oee<br>< 10 [0] Leet A LTE TTTTT)<br>NI S ee<br>SSS Ce<br>EEE EE NNT ANIL LNLIE<br>10 [-1]<br>eal a eae EEE GEREN 1 | EEE<br>ill SSSH<br>10 [-1] SS LT TTT TTPT<br>SSHa CMCCEMI CCI CELUI CLT<br>eeHH eeee e e<br>10 [-2] A | 10 nC [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS IV] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
5
**OptiMOS[TM] BSC155N06ND**
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80 50<br>7 V<br>10 V<br>PTT PTTL EEE EL EE eee ee ee<br>70 PLU ALL EEE EL EEE EL LL<br>6.5 V 40<br>CAT TET eee ee<br>60<br>TUAAL<br>po | Pe<br>50 OT TTP t 5 V<br>ee 30 | | 5.5 V ee<br>6 V<br>6.5 V<br>6 V<br>ef 40 eee. PA Le<br>eeeH 20 4o—6r4neSy<br>30<br>HAT TTT TTT TTT TTT TT a —<br>5.5 V<br>20 ee|Jame eee>>> 10 V<br>T Ae 10 ee<br>5 V<br>10<br>{a yf ft pf<br>0 |PFETRRR TE ELE EEE EEE ELL 0 “TT Pe yr y<br>0 2 4 6 8 0 20 40 60 80<br>V DS Vv I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>80 40<br>PELLET EEE PELL EET LEL ELLE EEL EE<br>ALLELE PELL EET ELEN<br>70 35<br>PELLET EEEEEE<br>SUE EEE PETTITT TT ET TTA EEE ET<br>60 30<br>PEELE PLETE ETA EE<br> EEE PETE ET TTT TE NEE<br>50 25<br>PELLET EE LETT TTTTT TP PNET<br>175 °C<br>< 40 HUT)PEE fe 20 LEHEE EPP |<br>PELLET A PEELE EEN<br>30 15<br>PELLET EEE ALL EET TNE<br>25 °C<br>20 P ELLEELE E E LEELEE ELE E VLE 10 HePELL EET LEELAPPT |<br>25 °C<br>PELLET EEE ALE PELL EET LEE ELLEELLEE<br>175 °C<br>10 5<br>TTTTTT TTT a TT PELL EET LLL LLL ELLE EE<br>PUT AEE PELL EET LLL LEE LLL ELLE EE<br>0 PTT TLE ETT TTL LEM 0 PELL ELE EEL EEL LL ELL EET<br>0 1 2 3 4 5 6 7 0 2 4 6 8 10<br>V GS Vv V GS Vv<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
6
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OptiMOS [TM] T2 Po r a s isto r 0 V<br>BSC155N06ND<br>vi gram 5 Norma ized dra in -s ou = on = | oFam Tye . gafe ge<br>2.0 4.0<br>' | ;<br>| Tar<br>3.5<br>Ba i at<br>1.6<br>:i x:<br>3.0<br>~<br>HHi i a i<br>8<br>iieM<br>2.5 i =<br>a2 1.2 a AC<br>ne Htnt<br>3 aro =. 2.0 ' it Hit 3 ; atI<br>E | i Hti i N 200 µA<br>0.8<br>E 1.5 7-—| i } |<br>a<br>3 Tt 20 µA<br>z 7 +4 He; HitHtii :<br>1.0<br>0.4 i ait<br>cfuy<br>0.5 it|7HaIEi|<br>zs<br>il ' it<br>a -_<br>weLoopoer= a stH i tis ri ++[ i Ht i "ee| i; it i Tht::<br>0.0 0.0<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j rc; T j °C]<br>R DS(on)=f( T j I D : V GS = Y V GS(th=f( T j V GS= V DS 3> pa ra mete I D<br>—_ ar<br>>a : D iag orw.xa har act istic f er= de<br>10 [4] 10 “ [2] ——z Fo ===<br>= :<br>| 25 °C sae<br>=e 25 °C, max<br>H 175 °C :<br>eisett 1 175 °C, max<br>Ciss<br>ITiTy1 ifo e a ee = aeie<br>10 [3]<br>ae<br>/ | :Ty/] / i cfiA| lp/ :<br>seooa 10 [1]<br>il<br>Coss<br>_<br>Ssa 10 [2] < i<br>itLitiiiaiiii7 t ijjfeaesiti<br>a<br>= 10 [0] i | t / i /| / i ’[| |<br>: = mo :<br>10 [1]<br>Crss<br>=<br>ceceeyiiteaillieHsE e sisttce a ”e<br>= iaaeThos TT 2|vy| | | | || | | |<br>10 [0] 10 [-1]<br>0 10 20 30 40 50 60 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40<br>V DS 3 V SD :<br>C =f( V DS ); V GS =0V; f . I F=f( V SD ); param T j<br>__<br>GS(th)<br>V<br>R<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC155N06ND**
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10 [2] 10<br>——— = — ee ee SST<br>12 V<br>a I 30 V ST E LERRE, ELL AeAe<br>48 V<br>rT TTT TT TTT ak PSS<br>8 LTT TT TT ti tt et tt tT ya Tt<br>I LTT TET TTT eet tT tt ya tt tt yl<br>10 [1]<br>EN =EEEEEEEEEEEP<br>ANSEHEN 25 °C SS POPP Pr<br>se rc 6 I,<br>a SS ERY Ae<br>= a a ee S re beeT E<br><x ee Ne i Be S ee<br>EE AN SLT 4 SSSRSRe? ASRS<br>10 [0]<br>=e,aCCTM PSU PANT 100 °C | EEEEEGpACEESSSSSSSEER<br>a<br>eee 2 Ltt tAT ETT TT TTT Ty eT ty<br>150 °C<br>PT TT EEE SEE EEE<br>CTT EE EEEERE<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] Ty 10 [3] | 0 EEEPEEPEEPEEREAGE 4 8 12 16 20 EE 24<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
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Diagram Gate charge waveforms<br>66<br>64 EEE LLL EEEZ| yy<br>Atl<br>EEE DATESt<br>62<br>STAT3 L<br>EAE<br>60<br>ff<br>EAE<br>AEE/<br>58<br>i _ ~<br>HNCAAHNQUITTTUTUTUVOQOOUUTE eene<br>56<br>-80 -40 0 40 80 120 160 200<br>T j<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC155N06ND**
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## **5�����Package�Outlines**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 0.90 1.10<br>A1 0.15 0.35<br>b 0.34 0.54<br>b1 0.02 0.22<br>D 4.95 5.35<br>D1 4.20 4.40<br>D2 0.50 0.70<br>E 5.95 6.35<br>E1 5.70 6.10<br>E2 4.075 4.275<br>E3 4.035 4.235<br>E4 0.15 0.35<br>e 1.27<br>L 0.45 0.65<br>M 0.45 0.65<br>Θ 8.5 ° 11.5 °<br>aaa 0.05<br>ddd 0.10<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00189767<br>REVISION<br>01<br>SCALE 5:1<br>0 1 2 3 4mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>31.07.2018<br>**----- End of picture text -----**<br>
## **Figure�1�����Outline�SSO8�dual�(TDSON-8-4),�dimensions�in�mm**
Final Data Sheet
9
Rev.�2.0,��2018-12-11
**OptiMOS[TM] BSC155N06ND**
## BSC155N06ND
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-12-11|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
10
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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