BSC150N03LDGATMA1
Power MOSFET, N Channel, 30 V, 20 A, 0.015 ohm, PG-TDSON, Surface Mount
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; P
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 26W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TDSON
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 20A
- Drain Source On State Resistance: 0.015ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.237 € |
| Current stock | 1000+ |
| Lead time | 30 days |
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|,B48 ?8<br>ratings, at|W<br>=25 °C, unless otherwise specified|||||
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|+#<br>~~ambient,6 cm? coolingare~~|'U@6|"<br>~~steadystate~~|<br>~~ff]~~|<br>~~ff]~~|~~ff]as|~~||
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|%<br>tatic characteristics<br>~~Drain-sourcebreakdownvoltage~~<br>~~P|~~<br>~~=0V,=1mAPf]~~|||||||
|~~Drain-sourcebreakdownvoltage~~|)"7H#9II <br>~~P|~~|)=I<br>$9<br>~~P|~~<br>~~=0V,=1mA~~|+(<br>~~Pf]~~|%<br>~~Pf]~~|%<br>~~Pf]~~|K|
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|~~Gate-sourceleakagecurrent~~|$=II<br>~~P|~~|)=I<br>)9I<br>~~P|~~<br>~~=20V,~~<br>~~=0V~~|%<br>~~Pf]~~|)(<br>~~Pf]~~|)((<br>~~Pf]~~|[6|
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|+#<br>*#<br>See figure 3<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with 6 cm? (one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air. One transistor active.|||||||
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|Dyna<br>_ic characteristics<br>~~Inputcapacitance~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Inputcapacitance~~<br>~~Outputcapacitance~~|!V__<br>~~P|~~<br>~~P|~~|)=I<br>)9I<br>+<br>" J<br>~~P|~~<br>~~P|~~ =4“OV,<br>=18V, <br>~~P|~~|%<br>~~Pf]~~<br>~~Pf]~~|0-(<br>~~Pf]~~<br>~~Pf]~~|))((<br>~~Pf]~~<br>~~Pf]~~|]<|
|~~Input capacitance~~<br>~~Outputcapacitance~~|!\__<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|+-(<br>~~Pf]~~<br>~~Pf]~~|,/(<br>~~Pf]~~<br>~~Pf]~~||
|~~Output capacitance~~<br>Reversetransfercapacitance<br>~~Turn-ondelaytime~~|8^__<br>~~P|~~<br>~~a~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|).<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf~~<br>~~Pf]~~||
|~~Turn-ondelaytime~~|.Q"\[#<br>~~P|~~|)99<br>)=I<br>$9<br>'=<br>W<br>~~P|~~<br>~~P|~~ =20A,<br>=16|%<br>~~Pf]~~|*&/<br>~~Pf]~~|%<br>~~Pf]~~|[_|
|~~Turn-on delay time~~<br>~~Turn-offdelaytime~~|.^<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|*&*<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~||
|~~Turn-offdelaytime~~|.Q"\SS#<br>~~P|~~||%<br>~~Pf]~~|)*<br>~~Pf]~~|%<br>~~Pf]~~||
|~~Turn-off delay time~~|.S<br>~~P|~~||%<br> ~~Pf]~~|*&(<br>~~Pf]~~|%<br>~~Pf]~~||
|#<br>Gate Char e Characteristics<br>~~Gatetosourcecharge~~<br>~~po~~<br>~~Pf~~|||||||
|~~Gatetosourcecharge~~<br>~~po~~<br>~~Gatechargeatthreshold~~<br>~~po~~|&T_<br>~~po~~<br>~~po~~|)99<br>$9<br>)=I<br>~~P|~~<br>=15V,<br>=20A, <br>~~P|~~<br>=0to4.5.V<br>~~P|~~<br>~~P|~~|%<br>~~Pf~~<br>~~Pf~~|*&.<br>~~Pf~~<br>~~Pf~~|%<br>~~Pf~~<br>~~Pf~~|[8|
|~~Gate to source charge~~<br>~~po~~<br>~~Gatechargeatthreshold~~<br>~~po~~<br>~~Gatetodraincharge~~|&T"U#<br>~~po~~<br>~~po~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|)&*<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~|%<br>~~Pf~~<br>~~Pf~~<br>~~Pf]~~||
|~~Gate charge at threshold~~<br>~~po~~<br>~~Gatetodraincharge~~<br>~~Switchingcharge~~|&TQ<br>~~po~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|)&*<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate to drain charge~~<br>~~Switchingcharge~~<br>~~Gatechargetotal~~|&_c<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br> ~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|*&.<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Switching charge~~<br>~~Gatechargetotal~~<br>~~Gateplateauvoltage~~|&T<br>~~P|~~<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|,&0<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~|.&,<br>~~Pf]~~<br>~~Pf]~~<br>~~Pf]~~||
|~~Gate charge total~~<br>~~Gateplateauvoltage~~|)]YNRNa<br>~~P|~~<br>~~P|~~||%<br>~~Pf]~~<br>~~Pf]~~|+&,<br>~~Pf]~~<br>~~Pf]~~|%<br>~~Pf]~~<br>~~Pf]~~|K|
|~~Gate plateau voltage~~<br>~~Gatechargetotal,sync.FET~~<br>~~|~~|&T<br>~~P|~~<br>~~|~~<br>~~|~~|)99<br>$9<br>)=I<br>~~P|~~<br>=0 to 10 V<br>~~Bey~~|%<br>~~Pf]~~<br>~~ff]~~|)(<br>~~Pf]~~<br>~~ff]~~|)+&*<br>~~Pf]~~<br>~~ff]~~||
|~~Gatechargetotal,sync.FET~~<br>~~|~~|&T"_e[P#<br>~~|~~<br>~~|~~|)9I<br>)=I<br>~~Bey~~<br>=0to4.5V|%<br>~~ff]~~|,&*<br>~~ff]~~|%<br>~~ff]~~|[8|
|~~Gate charge total, sync. FET~~<br>~~|~~|&\__<br>~~|~~<br>~~| ~~|)99<br>)=I<br> ~~Bey ~~|%<br> ~~ff]~~|1<br>~~ff]~~|%<br>~~ff]~~||
|$ /0<br>everse Di<br>~~**Diode**continuousforwardcurrentfave|~~<br>~~++—~~|||||||
|~~**Diode**continuousforwardcurrent~~<br>~~pulsecurrent~~|$I<br>~~fave~~<br>~~P|~~|(8<br>~~fave|~~<br>=25 °C<br>~~P|~~|%<br>~~|~~<br>~~+~~<br>~~Pf]~~|%<br>~~+—~~<br>~~Pf]~~|*(<br>~~+—~~<br>~~Pf]~~|6|
|~~**Diode**continuousforwardcurrent~~<br>~~pulsecurrent~~|$I$]aY_R<br>~~fave~~<br>~~P|~~||%<br>~~|~~<br>~~+~~<br>~~Pf]~~|%<br>~~+—~~<br>~~Pf]~~|0(<br>~~+—~~<br>~~Pf]~~||
|~~**Diode** continuous forward current ~~<br>~~pulse current~~|)I9<br> ~~fave~~<br>~~P|~~|)=I<br>$<<br>(W<br>~~fave |~~<br>~~P|~~<br>=25<br>°C|%<br>~~|~~<br>~~+ ~~<br>~~Pf]~~|(&1+<br> ~~+—~~<br>~~Pf]~~|)&)<br>~~+—~~<br>~~Pf]~~|K|
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|,#<br>See figure 16 for gate charge parameter definition|||||||
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and/or 34B@=@;C automotive, aviation and aerospace applications or systems only with the express written
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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