BSC13DN30NSFDATMA1

Power MOSFET, N Channel, 300 V, 16 A, 0.13 ohm, TDSON, Surface Mount

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Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.114ohm; R; Available until stocks are exhausted Alternative available
MSL: MSL 1 - Unlimited
SVHC: No SVHC (21-Jan-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS
Qualification: -
Power Dissipation: 150W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TDSON
Drain Source Voltage Vds: 300V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 16A
Drain Source On State Resistance: 0.13ohm
Gate Source Threshold Voltage Max: 3V

Delivery and price
Units per pack	1
Price	3.37 €
Current stock	10+
Lead time	30 days

Datasheet

**BSC13DN30NSFD** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

_R_ DS(on) _R_ DS(on) 

|**Parameter**<br>Table 1<br>Key Performance|**Value**<br>Performance Parameters|**Unit**<br>Parameters|
|---|---|---|
|_V_DS|300|V|
|_R_DS(on),max|130|mΩ|
|_I_D|16|A|



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|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSC13DN30NSFD<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TDSON-8<br>~~**|**~~|13DN30NF|-|



1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] 3�Power-Transistor,�300�V BSC13DN30NSFD** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.1,��2016-12-05 

**OptiMOS[TM] 3�Power-Transistor,�300�V BSC13DN30NSFD** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|16<br>14|A|_T_C=25°C<br>_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|64|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|56|mJ|_I_D=14.4A,_R_GS=25Ω|
|Reversediodepeakd_v_/d_t_|d_v_/d_t_|-|-|60|kV/µs|_I_D=36A,_V_DS=150V,<br>d_i_/d_t_=1000A/µs,_T_j,max=175°C|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|150|W|_T_C=25°C|
|Operatingand storage temperature|_T_j,_T_stg|-55|-|175|°C|-|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.6|1|K/W|-|
|Thermal resistance, junction  - ambient,<br>minimal footprint|_R_thJA|-|-|75|K/W|-|
|Thermal resistance, junction  - ambient,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|



## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|300|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2|3|4|V|_V_DS=_V_GS,_I_D=90µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=240V,_V_GS=0V,_T_j=25°C<br>_V_DS=240V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|114|130|mΩ|_V_GS=10V,_I_D=16A|
|Gate resistance|_R_G|-|3.3|5|Ω|-|
|Transconductance|_g_fs|19|38|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=16A|



- 1) See Diagram 3 

- 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

Final Data Sheet 

3 

Rev.�2.1,��2016-12-05 

**OptiMOS[TM] 3�Power-Transistor,�300�V BSC13DN30NSFD** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance|_C_iss|-|1840|2450|pF|_V_GS=0V,_V_DS=150V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|76|102|pF|_V_GS=0V,_V_DS=150V,_f_=1MHz|
|Reverse transfer capacitance1)|_C_rss|-|5.4|-|pF|_V_GS=0V,_V_DS=150V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|8.0|-|ns|_V_DD=150V,_V_GS=10V,_I_D=8A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|4.0|-|ns|_V_DD=150V,_V_GS=10V,_I_D=8A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|19|-|ns|_V_DD=150V,_V_GS=10V,_I_D=8A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|4.0|-|ns|_V_DD=150V,_V_GS=10V,_I_D=8A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|8.0|-|nC|_V_DD=150V,_I_D=16A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|2.9|-|nC|_V_DD=150V,_I_D=16A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|5.4|-|nC|_V_DD=150V,_I_D=16A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|23|30|nC|_V_DD=150V,_I_D=16A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.4|-|V|_V_DD=150V,_I_D=16A,_V_GS=0to10V|
|Output charge|_Q_oss|-|48|-|nC|_V_DD=150V,_V_GS=0V|



## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|16|A|_T_C=25°C|
|Diode pulse current3)|_I_S,pulse|-|-|64|A|_T_C=25°C|
|Diode hard commutation current4)|_I_S,hard|-|-|16|A|_TC=25°C,_d_i_F/d_t_=1000A/µs|
|Diode forward voltage|_V_SD|-|0.9|1.2|V|_V_GS=0V,_I_F=16A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|111|222|ns|_V_R=150V,_I_F=12.6A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|249|498|nC|_V_R=150V,_I_F=12.6A,d_i_F/d_t_=100A/µs|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

> 3) Diode pulse current is defined by thermal and/or package limits 

> 4) Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs 

Final Data Sheet 

Rev.�2.1,��2016-12-05 

4 

**OptiMOS[TM] BSC13DN30NSFD** 

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Final Data Sheet 

5 

**OptiMOS[TM] BSC13DN30NSFD** 

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Final Data Sheet 

6 

**OptiMOS[TM] BSC13DN30NSFD** 

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Final Data Sheet 

7 

**OptiMOS[TM] BSC13DN30NSFD** 

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PT Gate charge waveforms 

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Final Data Sheet 

8 

**OptiMOS[TM]** 3 Power-Transistor, 300 V **BSC13DN30NSFD** 

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EUROPEAN PROJECTION<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] BSC13DN30NSFD** 

Final Data Sheet 

10 

**OptiMOS[TM] BSC13DN30NSFD** 

## BSC13DN30NSFD 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|1.2|2016-04-26|Release of Preliminary Datasheet|
|1.3|2016-05-13|Rev. 1.3 (preliminary datasheet)|
|2.0|2016-10-21|Release of final version|
|2.1|2016-12-05|Update Eas|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11

Updated at March 10, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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