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BSC117N08NS5ATMA1
Power MOSFET, N Channel, 80 V, 49 A, 0.0117 ohm, TDSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 50W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 80V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 49A
- Drain Source On State Resistance: 0.0117ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.509 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MOSFET **OptiMOS[TM] OptiMOS[TM]** 5 BSC117N08NS5 Final ## **OptiMOS[TM]** 5 Power-Transistor, BSC117N08NS5 80 V ## **Features** **==> picture [6 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> 1)<br>**----- End of picture text -----**<br> |**Parameter**|**Value**|**Unit**| |---|---|---| |_V_DS|80|V| |_R_DS(on),max|11.7|mΩ| |_I_D|49|A| |_Q_oss|19|nC| |_Q_G(0V..10V)|15|nC| **==> picture [151 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>5, Mine<br>“Person<br>1 4<br>3<br>2 2<br>3 1<br>4<br>S 1S 2 T i l 8 D7 D<br>S 3 1 I h 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br> ||**Package**|**Marking**|| |---|---|---|---| |BSC117N08NS5|PG-TDSON-8|117N08NS|-| 1) J-STD20 and JESD22 Final Data Sheet 2 **OptiMOS[TM] 5�Power-Transistor,�80�V** BSC117N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.�2.0,��2014-12-17 **OptiMOS[TM] 5�Power-Transistor,�80�V** BSC117N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **2�����Maximum�ratings** at� _T_ j�=�25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|49<br>31<br>19|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_C=25°C,_R_thJA=50K/W1)| |Pulsed drain current2)|_ID,pulse_|-|-|196|A|_T_C=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|14|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|50<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W1)| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56| ## **3�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|1.5|2.5|K/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-| |Device on PCB,<br>6 cm2cooling area1)|_R_thJA|-|-|50|K/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See figure 3 for more detailed information > 3) See figure 13 for more detailed information Final Data Sheet Rev.�2.0,��2014-12-17 4 **OptiMOS[TM] 5�Power-Transistor,�80�V** BSC117N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **4�����Electrical�characteristics** ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|80|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|2.2|3|3.8|V|_V_DS=_V_GS,_I_D=22µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=80V,_V_GS=0V,_T_j=25°C<br>_V_DS=80V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|9.6<br>13.7|11.7<br>16.3|mΩ|_V_GS=10V,_I_D=25A<br>_V_GS=6V,_I_D=12.5A| |Gate resistance1)|_R_G|-|1.1|1.7|Ω|-| |Transconductance|_g_fs|19|38|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=25A| |**Table5Dynamiccharacteristics**||||||| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|1000|1300|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Output capacitance1)|_C_oss|-|180|230|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|11|19|pF|_V_GS=0V,_V_DS=40V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|10|-|ns|_V_DD=40V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=3Ω| |Rise time|_t_r|-|4|-|ns|_V_DD=40V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=3Ω| |Turn-off delay time|_t_d(off)|-|16|-|ns|_V_DD=40V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=3Ω| |Fall time|_t_f|-|3|-|ns|_V_DD=40V,_V_GS=10V,_I_D=25A,<br>_R_G,ext=3Ω| 1) Defined by design. Not subject to production test. Final Data Sheet Rev.�2.0,��2014-12-17 5 BSC117N08NS5 **==> picture [146 x 65] intentionally omitted <==** ## **OptiMOS[TM] 5�Power-Transistor,�80�V** ## **Table�6�����Gate�charge�characteristics[1)]** |**Table6Gatechargecharacte**|**ristics1)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|5|-|nC|_V_DD=40V,_I_D=25A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|3|-|nC|_V_DD=40V,_I_D=25A,_V_GS=0to10V| |Gate to drain charge2)|_Q_gd|-|3|5|nC|_V_DD=40V,_I_D=25A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|6|-|nC|_V_DD=40V,_I_D=25A,_V_GS=0to10V| |Gate charge total2)|_Q_g|-|15|18|nC|_V_DD=40V,_I_D=25A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|5.0|-|V|_V_DD=40V,_I_D=25A,_V_GS=0to10V| |Gate charge total, sync. FET|_Q_g(sync)|-|13|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge2)|_Q_oss|-|19|25|nC|_V_DD=40V,_V_GS=0V| ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|45|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|196|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=25A,_T_j=25°C| |Reverse recoverytime2)|_t_rr|-|37|73|ns|_V_R=40V,_I_F=25A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge2)|_Q_rr|-|45|90|nC|_V_R=40V,_I_F=25A,d_i_F/d_t_=100A/µs| > 1) See ″ Gate charge waveforms ″ for parameter definition 2) Defined by design. Not subject to production test. Final Data Sheet 6 Rev.�2.0,��2014-12-17 **OptiMOS[TM]** 5 Power-Transistor, 80 V BSC117N08NS5 **==> picture [539 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 60 tf fF ft ff 60 Ff Ff | ff]<br>50 Pt | ct 50 | | ft ff<br>N ee e e ee<br>40 40<br>Ne ee eee | KE | | tf<br>ON Ne eee<br>es 30 | | |N | | fT fe 30 | | | EN<br>20 ON|tf | [TN |] 20 eeeeeeeee eeeeee<br>| | | KA] | | ft ft A<br>10 10<br>fF | | TN | | ft ft TN<br>0 ft fF| ff t | uENKK] 0 ifee| | ffeeey ee<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 266] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [1]<br>Yr | [| [tit ft TT ttt ft [TTT LT TT TTT TTTTT<br>1 µs<br>PTT BTS S0100<br>10 [2]<br>0.5<br>a AN Pll a tll<br>10 [0]<br>PANNA NTR 10 µs CCA EE e t t E<br>AOARANI XN Sci 0.2 Ath ett meee<br>10 [1] 100 µs 0.1<br>2 | iil) | ANNI OSU 8) Ee<br>1 ms 0.05<br>0.02<br>ENN 10 ms TAAL<br>Tn 10 [-1] IE LEE Ll<br>| ST DC ea 0.01 ee mer<br>10 [0]<br>NN =<br>single pulse<br>EHHE NE | Ze CC CA<br>0 TN LIE CUFT<br>10 [-1] 10 [-2] EINE ETE<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 7 5 Power-Transistor, BSC117N08NS5 80 V ## **OptiMOS[TM]** **==> picture [528 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 320 22<br>Pf; tet eT tet eye tt tt fo 5 V 5.5 V 6 V ee 7 V<br>20<br>280 See oe<br>Pt | | ttt tet | | Le 18 ee) a<br>240 10 V<br>16<br>POPPE et PA<br>Pf ttt eT tet tte tt An A<br>200 14<br>SSGGG000> 4eeeee oe<br>10 V<br>SOPPe AeA 12 ee<br>160<br>= AHA 7 V |§ 10 Seer<br>120 HSER Lf 8 |__|___. ———— |<br>Pili] AT itt ttSPEtt aOO<br>6<br>80 AZ a<br>TY Se 6 V 4 rda<br>5.5 V<br>40 Kw Lt a<br>2<br>5 V<br>fe. St<br>) AEG OO<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 50 100 150 200 250<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>120 100<br>es)<br>a ereeeeeeee<br>ee<br>100<br>80<br>ee ee eee<br>ee eeeeeeeeesae<br>80<br>HR) pee<br>60<br>2 60 fit tt ep yy —<br>PP Peel COCA<br>es ae eaneeeeeeee<br>PTET 40<br>40<br>TTA TTT) py yyy yy<br>Se) eee ee 20 eeeeeeeeeee<br>20<br>HS | eee<br>150 °C<br>25 °C<br>aDaeO OPE<br>0 0<br>0 2 4 6 8 10 0 20 40 60 80 100 120 140<br>V GS [V] I D [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br> Final Data Sheet 8 5 Power-Transistor, BSC117N08NS5 80 V ## **OptiMOS[TM]** **==> picture [528 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 20 4<br>OO,<br>18 TTT<br>ee ALLL Se 220 µA<br>16<br>aTTDI LAL ALL 3 TS|<br>14 max 22 µA<br>7 SN<br>a a aw<br>12 a Pa<br>10 Cee typ |, 2 TE TENSE I<br>eet ee Nw<br>a<br>8 ea ae4ee<br>ee<br>6<br>OOTTI [IDILLLL] 1 LT ELE ELEY<br>TOT<br>4<br>OO<br>2 TITTIES<br>0 O OO 0 LT ELE ELEY<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>10 [4] 10 [3]<br>SSS SSS SSS SSS SSS SSS o 25 °C o<br>aassA OO CO (|| 150 °C CLa eeee|ee<br>25 °C, max<br>a ss | (| 150 °C, max fot [ ft | te et yt yy<br>a ee i Fett tT eee TT EE TT TT<br>10 [3] ee e e frrrrrr l Tt<br>Ciss<br>a EEEELLL<br>aes a 10 [2] eeLLLLAae| Leeee<br>Tie Coss — | || = aee<br>10 [2] Nee ee a YSee eee<br>— PEt TTT | Ag iat tt tT<br>—_—————— 10 [1] LEELA EEE<br>a Ne pf | | | | | f ip | | ft | | |<br>10 [1] | | we | | aSEESSSEEGERS| As EEEGR EEEGC ES|<br>Crss<br>Rs SQ (<br>a EEE<br>10 [0] 10 [0] EEE EEE<br>0 20 40 60 80 0.0 0.5 1.0 1.5 2.0<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>] Ω<br> [m<br>GS(th)<br>DS(on) V<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 9 BSC117N08NS5 ## **OptiMOS[TM]** **==> picture [536 x 609] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>=a | 9 DLO”<br>40 V<br>| 8 TTT TT 4a<br>S CREIN 7 TTTTTT AT<br>16 V 64 V<br>6<br>SECS eA<br>10 [1] 25 °C 5<br>NORE EM Ns Cece ee<br>NIN LDS = 4<br>ESHEETS EEE 4 T A T<br>100 °C<br>3<br>™ \<br>Z<br>2<br>125 °C<br>1<br>BAULLL ONT) aZEScererececeAEREREGRGGGE e<br>10 [0] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>so Gate charge waveforms<br>86<br>EERE ”<br>PLE EET :<br>84<br>Eevee<br>PLETELY<br>82<br>eit itt<br>PLETAL<br>80<br>PL IAL EEE<br>78<br>EZ /<br>PARR Om ee aut<br>76 PEELE ELL 7 2.<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D oo<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 10 **OptiMOS[TM]** 5 Power-Transistor, BSC117N08NS5 80 V **==> picture [85 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> EUROPEAN PROJECTION<br>**----- End of picture text -----**<br> Final Data Sheet 11 **OptiMOS[TM]** 5 Power-Transistor, BSC117N08NS5 80 V BSC117N08NS5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2014-12-17|Release of final version| ## **erratum@infineon.com** ## **Information** **www.infineon.com** ). ## **Warnings** Final Data Sheet 12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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