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BSC112N06LDATMA1
Dual MOSFET, N Channel, 60 V, 60 V, 20 A, 20 A, 0.0112 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS-T2 Series
- Qualification: -
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 60V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 20A
- Power Dissipation N Channel: 65W
- Power Dissipation P Channel: 65W
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 20A
- Continuous Drain Current Id P Channel: 20A
- Drain Source On State Resistance N Channel: 0.0112ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.581 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
**BSC112N06LD**
## **MOSFET**
## **OptiMOS[TM]**
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**----- Start of picture text -----**<br>
OptiMOS -T2 Power Transistor, 60 V PG-TDSON-8-4<br>8 1<br>Features 7 2<br>6 5 3 4<br>- Dual N-channel, Logic level<br>- Fast switching MOSFETs for SMPS<br>- Optimized technology for Synchronous Rectification<br>- Pb-free plating; ROHS compliant 1 8<br>- 100% Avalanche tested 2 7<br>3 6<br>- Superior Thermal Resistance 4 5<br>- Halogen-free according to IEC61249-2-21<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22<br>D1 D1 D2 D2<br>8 7 6 5<br>Parameter Value Unit<br>Table V DS 1 Key Performance Parameters 60 V ia, |<br>R DS(on),max 11.2 m Ω S1 G1 S2 G2<br>I D 20 A<br>—— : — -<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC112N06LD<br>~~Type/OrderingCode |~~|SSO8 dual(TDSON-8-4)<br>~~|~~|112N06LD<br>|-<br>|
Final Data Sheet
1
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC112N06LD**
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## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.�2.0,��2018-12-11
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC112N06LD**
**==> picture [120 x 53] intentionally omitted <==**
## **1�����Maximum�ratings**
at� _T_ A=25�°C,�unless�otherwise�specified,�one�transistor�active
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-|-|20|A|_V_GS=10V,_T_C=25°C|
|Pulsed drain current1)|_I_D,pulse|-|-|80|A|_T_A=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|80|mJ|_I_D=10A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-16|-|16|V|-|
|Power dissipation|_P_tot|-|-|65|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|2.3|°C/W|-|
|Device on PCB,<br>6 cm² cooling area3)|_R_thJA|-|-|60|°C/W|-|
|Device on PCB,<br>minimal footprint4)|_R_thJA|-|-|100|°C/W|-|
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|60|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|1.7|2.2|V|_V_DS=_V_GS,_I_D=28µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>5|1<br>100|µA|_V_DS=60V,_V_GS=0V,_T_j=25°C<br>_V_DS=60V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=16V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|9.5<br>12.5|11.2<br>15.8|mΩ|_V_GS=10V,_I_D=17A<br>_V_GS=4.5V,_I_D=10A|
1) See Diagram 3 for more detailed information
2) See Diagram 13 for more detailed information
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
4) device mounted on a minimum pad (one layer, 70 µm thick)
Final Data Sheet
3
Rev.�2.0,��2018-12-11
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC112N06LD**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|3090|4020|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|590|770|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|28|56|pF|_V_GS=0V,_V_DS=30V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|11|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Rise time|_t_r|-|3|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Turn-off delay time|_t_d(off)|-|51|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Fall time|_t_f|-|7|-|ns|_V_DD=30V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|10|13|nC|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|3.4|6.7|nC|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|41|55|nC|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|3.2|-|V|_V_DD=30V,_I_D=20A,_V_GS=0to10V|
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|20|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|80|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.88|1.1|V|_V_GS=0V,_I_F=17A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|35|-|ns|_V_R=30V,_I_F=9A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|35|-|nC|_V_R=30V,_I_F=9A,d_i_F/d_t_=100A/µs|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition
Final Data Sheet
Rev.�2.0,��2018-12-11
4
**OptiMOS[TM] BSC112N06LD**
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70 70<br>a ee a es<br>e s a es<br>N e po<br>60 e e 60 pf<br>a ee a Ds<br>silicon limit<br>po ON a ee ee<br>a Ne a ee<br>50 Po 50 ee<br>a NN ss Nsee<br>Poa Heee ee Poa,ONNe e e<br>a NT poN<br>40 se 40 poNT<br>5= aaa se e ee 4 PRa<br>30 pf ee 30 poNT<br>a CK po fC<br>a es ee Oe PoNN<br>a es ee ee poNT<br>a ee a se es<br>20 20 package limit<br>po se ee A PN<br>a a a a ee e e<br>a ee ee a He Ds es<br>a ee a esWe<br>10 a ee ee 10 a Hs ee<br>a ee a|<br>po NT po<br>0 a 0 a<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T A [°C] T A [°C]<br>P tot=f( T A ), minimal footprint I D=f( T A ); minimal footprint<br>P tot I D<br>**----- End of picture text -----**<br>
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10 [2] 10 [1]<br>1 µs single pulse<br>PS S SS 10 µs 0 0.01 LL<br>10 ms<br>Pa SNSIENSES Ti ie 0.02 a<br>a ec INP<br>100 µs 0.05<br>P PT DC NOT PY \ 0.1 La<br>0.2<br>10 [1] T ANTONTI 0.5 METT LE<br>SAWILENININ) Ef e<br>10 [0]<br>1 ms<br>= LT TT TT<br>10 [0]<br>< NII S a tS<br>eee ee Le | UI TT CI TT<br>| LTTE ETT TENN iil 10 [-1] COA | ET |<br>FH eee | IT<br>a EN ill Ze th<br>10 [-1] a ee ee Bee Fee<br>a= NE eT<br>| | oT TTT TT TTT<br>10 [-2] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
5
**OptiMOS[TM] BSC112N06LD**
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80 70<br>5 V<br>TOPO 10 V |) EERE<br>70 LAAT LT TT TTT TT 60 oe ee<br>4.5 V<br>A a<br>60 PLT TTA LEELA ELE LLL EEE ra| | a [|ee[| [| eef [ [T JTeeTT [PTT Tt TT 7]<br>liye 4 V 50 A | OO<br>50 SRE SEEGER REESE SEE<br>40<br>OC = =<br>=< 40 LWA) Js See<br>PTME LLL ELE LEE LLL LLL EL |<br>30 3 V<br>3.5 V<br>30 OT / 3.5 V eg|<br>4 V<br>Cae aaa<br>20<br>20 AVL LEE LLL ELLE EE a a A<br>4.5 V<br>PCE see<br>10 !WOOTARERRRRR 3 V 10 A=== SSS =— oe 10 V<br>0 PCO 0 rf=[| [| TT [TT JT TT TT TT Tt TT TT TT Ty fT T ]<br>0 1 2 3 4 5 0 10 20 30 40 50 60 70 80<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>80 30<br>EECCA) See Ieee<br>70 PET [LLL][ EEE][ LLL][ELLE] | EEEEEEE RRR<br>PEEEECCCCCCCCCCO A 25 FA AEH]<br>60 TEE EEA) | EERE<br>LTTE [TTT] TTT tT 20 FCCCRERee<br>PTT LLL EEE LLL ELLA EL ECC ECEACSCNS HH<br>50<br>PTTL W/ Pte Te TTT Ty yy PT ™s“IO 175 °C LT TT Ty<br>EEE LLL EEL FELL Soo<br>40 15<br>/| \<br>30 POCECEECEEL CAEL SEER SSS<br>10 25 °C<br>PTTL EEE LLL ELT VEEL PEPE<br>20 PPTYT ET TL TELL ELELAALLTAA TET| EEE P FREETETOC TTTEPeECE eretee eeeEEE yyEEEeeeEEE e ee eee)e<br>175 °C<br>5<br>PTTL EL PAA LLL FCCC CEC EE ECE CE CE<br>10<br>25 °C<br>TPP VT FEE CECE CECE CCEEE Ce<br>0 PTT TT TTT YT“| Y 0 PEEfT TT E T TT EE ETTE PEPE TTT T yT yyTe eeeeT ey TT Tf<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
6
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Final Data Sheet
7
**OptiMOS[TM] BSC112N06LD**
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**----- Start of picture text -----**<br>
10 [2] 10<br>— Fo o Ly<br>a | 12 V ERR ERE Ae<br>a a a ee 30 V Y<br>a 48 V PET TUT TT TT TTT eee<br>8<br>EH EERE, AeY<br>| E EE<br>10 [1] EINE EE LET SE000S00000587EERE,/0ERRSe00E8AR<br>A PPE eee YATE<br>po NNN NTT TTT 6 4<br>CF 25 °C Coon Re Ae<br>z a.<br><x p—_| | Tt SE NS NS EERE ARE<br>pt NEE SSN i Be Cee<br>PANETT 4 SRSSGS00y<br>100 °C<br>10 [0] CMMI SSeSeee<br>TTT! | EEE CE EEECEESSESEE<br>a /<br>Pt TTT NTT 2 Be A e<br>LT ETT 150 °C LT TAL<br>Ne COA<br>TUTE AREERTILT EEREEE E EEE EEEEEEEE<br>10 [-1] FEET TEE) ) ARR 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
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TO Diagram Gate charge waveforms<br>66<br>AEE Py<br>64<br>Cecall<br>62<br>Maa TL<br>UUDRRURAROAEE ODED ZA0RUUNGEERRL<br>60<br>ff EE<br>UAL<br>EEE<br>58<br>a<br>ALL} ee ant<br>56<br>HACAUTTANVOQO0(FNTNQ00018 I jane PP<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D eee<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] -T2�Power�Transistor,�60�V BSC112N06LD**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 0.90 1.10<br>A1 0.15 0.35<br>b 0.34 0.54<br>b1 0.02 0.22<br>D 4.95 5.35<br>D1 4.20 4.40<br>D2 0.50 0.70<br>E 5.95 6.35<br>E1 5.70 6.10<br>E2 4.075 4.275<br>E3 4.035 4.235<br>E4 0.15 0.35<br>e 1.27<br>L 0.45 0.65<br>M 0.45 0.65<br>Θ 8.5 ° 11.5 °<br>aaa 0.05<br>ddd 0.10<br>**----- End of picture text -----**<br>
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DOCUMENT NO.<br>Z8B00189767<br>REVISION<br>01<br>SCALE 5:1<br>0 1 2 3 4mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>31.07.2018<br>**----- End of picture text -----**<br>
## **Figure�1�����Outline�SSO8�dual�(TDSON-8-4),�dimensions�in�mm**
Final Data Sheet
9
Rev.�2.0,��2018-12-11
**OptiMOS[TM] BSC112N06LD**
## BSC112N06LD
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-12-11|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
10
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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