BSC0993NDATMA1

Dual MOSFET, N Channel, 30 V, 30 V, 17 A, 17 A, 0.005 ohm

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS 5 Series
Qualification: -
Transistor Case Style: TISON
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 17A
Power Dissipation N Channel: 2.5W
Power Dissipation P Channel: 2.5W
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 17A
Continuous Drain Current Id P Channel: 17A
Drain Source On State Resistance N Channel: 0.005ohm
Drain Source On State Resistance P Channel: -

Delivery and price
Units per pack	1000
Price	0.333 €
Current stock	1000+
Lead time	30 days

Datasheet

**BSC0993ND** 

## **MOSFET** 

## **OptiMOS[TM]** 

## **Features** 

) 

|**Parameter**<br>~~Table 1~~<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS|30|V|
|_R_DS(on),max|5|mΩ|
|_I_D|17|A|
|_Q_OSS|8.6|nC|
|_Q_G(0V..4.5V)|6.7|nC|



|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSC0993ND<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TISON-8<br>~~**|**~~|0993ND|-|



1) J-STD20 and JESD22 Final Data Sheet 

1 

**OptiMOS[TM] �Power-MOSFET,�30�V BSC0993ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.0,��2016-07-11 

**OptiMOS[TM] �Power-MOSFET,�30�V BSC0993ND** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _TA_ =25�°C,�unless�otherwise�specified,�one�transistor�active 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|17<br>10|A|_V_GS=10V,_T_A=25°C<br>_V_GS=10V,_T_A=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|68|A|_T_A=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|14|mJ|_I_D=20A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|2.5|W|_T_A=25°C,_R_thJA=50K/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|4.2|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|



> 1) See Diagram 3 for more detailed information. 

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

Final Data Sheet 

3 

Rev.�2.0,��2016-07-11 

**OptiMOS[TM] �Power-MOSFET,�30�V BSC0993ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|30|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|-|2.0|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=30V,_V_GS=0V,_T_j=25°C<br>_V_DS=30V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|5.6<br>4.2|7<br>5|mΩ|_V_GS=4.5V,_I_D=7A<br>_V_GS=10V,_I_D=7A|
|Gate resistance1)|_R_G|1.3|2.6|5.2|Ω|-|
|Transconductance|_g_fs|24|48|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=11A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|870|1200|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|330|440|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|49|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|3.6|-|ns|_V_DD=15V,_V_GS=10V,_I_D=7A,<br>_R_G,ext=1.6Ω|
|Rise time|_t_r|-|3.8|-|ns|_V_DD=15V,_V_GS=10V,_I_D=7A,<br>_R_G,ext=1.6Ω|
|Turn-off delay time|_t_d(off)|-|17|-|ns|_V_DD=15V,_V_GS=10V,_I_D=7A,<br>_R_G,ext=1.6Ω|
|Fall time|_t_f|-|3.0|-|ns|_V_DD=15V,_V_GS=10V,_I_D=7A,<br>_R_G,ext=1.6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|2.1|-|nC|_V_DD=15V,_I_D=7A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|1.4|-|nC|_V_DD=15V,_I_D=7A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|2.0|-|nC|_V_DD=15V,_I_D=7A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|2.7|-|nC|_V_DD=15V,_I_D=7A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|6.7|-|nC|_V_DD=15V,_I_D=7A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.4|-|V|_V_DD=15V,_I_D=7A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|13|18|nC|_V_DD=15V,_I_D=7A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|5.4|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge1)|_Q_oss|-|8.6|11|nC|_V_DD=15V,_V_GS=0V|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.0,��2016-07-11 

4 

**OptiMOS[TM] �Power-MOSFET,�30�V BSC0993ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|2.5|A|_T_A=25°C|
|Diode pulse current|_I_S,pulse|-|-|68|A|_T_A=25°C|
|Diode forward voltage|_V_SD|-|0.76|1.1|V|_V_GS=0V,_I_F=2.5A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|5|-|nC|_V_R=15V,_I_F=_I_S,d_i_F/d_t_=400A/µs|



Final Data Sheet 

Rev.�2.0,��2016-07-11 

5 

**OptiMOS[TM] BSC0993ND** 

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Final Data Sheet 

6 

**OptiMOS[TM] BSC0993ND** 

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Final Data Sheet 

7 

**OptiMOS[TM] BSC0993ND** 

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Final Data Sheet 

8 

**OptiMOS[TM] BSC0993ND** 

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Final Data Sheet 

9 

**OptiMOS[TM] BSC0993ND** 

Final Data Sheet 

10 

## **OptiMOS[TM] BSC0993ND** 

## BSC0993ND 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-07-11|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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