BSC093N15NS5ATMA1

Power MOSFET, N Channel, 150 V, 87 A, 9300 µohm, TDSON, Surface Mount

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: INFINEON
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0079ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Po
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS 5
Qualification: -
Power Dissipation: 139W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TDSON
Drain Source Voltage Vds: 150V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 87A
Drain Source On State Resistance: 9300µohm
Gate Source Threshold Voltage Max: 3.8V

Delivery and price
Units per pack	3000
Price	1.45 €
Current stock	1000+
Lead time	30 days

Datasheet

**BSC093N15NS5** ES Glineon 

## **MOSFET OptiMOS[TM]** 5 

**==> picture [492 x 244] intentionally omitted <==**

**----- Start of picture text -----**<br>
OptiMOS 5 Power-Transistor, 150 V PG-TDSON-8<br>8 5<br>Features 7 6 5 has 6 7 8<br>¢ N-channel, normal N-channel, normal normal level / ©<br>¢ Excellent gate charge x R DS(on) product (FOM)<br>* Very low on-resistance R DS(on) Pin 1<br>¢ Very low reverse recovery charge (Qrr) 2 3 4 3<br>¢ 150 °C operating temperature 4 2<br>¢ Pb-free lead plating; ROHS compliant 1<br>* Qualified according to JEDEC _ for target application<br>* Ideal for high-frequency switching and synchronous rectification<br>Table 1 Key Performance Parameters Pin 5-8Drain<br>Parameter Value Unit<br>V DS 150 V Gate *1<br>Pin 4<br>R DS(on),max 9.3 m Ω<br>Source<br>I D 87 A *1: Internal body diode Pin 1-3<br>Qrr 58 nC<br>**----- End of picture text -----**<br>


## **Features** ¢ N-channel, normal N-channel, normal normal level 

Type **Package Marking** ~~/ Ordering Code | Reelated~~ BSC093N15NS5 PG-TDSON-8 093N15NS - 

1) J-STD20 and JESD22 

Final Data Sheet 

1 

**OptiMOS[TM] �5�Power-Transistor,�150�V BSC093N15NS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 

Final Data Sheet 

2 

Rev.�2.4,��2022-07-28 

**OptiMOS[TM] �5�Power-Transistor,�150�V BSC093N15NS5** 

**==> picture [120 x 53] intentionally omitted <==**

**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-|-<br>-|87<br>55|A|_T_C=25°C<br>_T_C=100°C|
|Pulsed drain current1)|_I_D,pulse|-|-|348|A|_T_C=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|130|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-|-|139|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.54|0.9|K/W|-|
|Thermal resistance, junction - ambient,<br>6 cm2cooling area3)|_R_thJA|-|-|50|K/W|-|



## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|150|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|3.0|3.8|4.6|V|_V_DS=_V_GS,_I_D=107µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=120V,_V_GS=0V,_T_j=25°C<br>_V_DS=120V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|7.9<br>8.7|9.3<br>10.5|mΩ|_V_GS=10V,_I_D=44A<br>_V_GS=8V,_I_D=22A|
|Gate resistance4)|_R_G|-|0.9|1.4|Ω|-|
|Transconductance|_g_fs|34|67|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=44A|



1) See Diagram 3 for more detailed information 

2) See Diagram 13 for more detailed information 

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

4) Defined by design. Not subject to production test 

Final Data Sheet 

3 

Rev.�2.4,��2022-07-28 

**OptiMOS[TM] �5�Power-Transistor,�150�V BSC093N15NS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2430|3230|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|604|803|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Reverse transfer capacitance1)|_C_rss|-|15|26|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|14|-|ns|_V_DD=75V,_V_GS=10V,_I_D=44A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|4.3|-|ns|_V_DD=75V,_V_GS=10V,_I_D=44A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|14.4|-|ns|_V_DD=75V,_V_GS=10V,_I_D=44A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|3.8|-|ns|_V_DD=75V,_V_GS=10V,_I_D=44A,<br>_R_G,ext=3Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|14|-|nC|_V_DD=75V,_I_D=44A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|6.8|10.2|nC|_V_DD=75V,_I_D=44A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|13.4|-|nC|_V_DD=75V,_I_D=44A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|33|40.7|nC|_V_DD=75V,_I_D=44A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.7|-|V|_V_DD=75V,_I_D=44A,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|91|121|nC|_V_DD=75V,_V_GS=0V|



## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continous forward current|_I_S|-|-|87|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|348|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.88|1.2|V|_V_GS=0V,_I_F=44A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|49|98|ns|_V_R=75V,_I_F=_44_,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|58|116|nC|_V_R=75V,_I_F=_44_,d_i_F/d_t_=100A/µs|



> 1) Defined by design. Not subject to production test 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.4,��2022-07-28 

4 

**OptiMOS[TM] BSC093N15NS5** 

**==> picture [539 x 633] intentionally omitted <==**

**----- Start of picture text -----**<br>
150 | — —_ + — }— }—_} — 100 ee<br>Fj es<br>125 N e eee a<br>80<br>a a a CC<br>PT UN ey a<br>100<br>-—}—__| \ +—__}+—__}—_ J a<br>60<br>75<br>=. A<br>-—_+—_} \}+—_+—__+— a<br>40<br>eS ee ee ns<br>50 a Ae<br>oN EE es Oe<br>A a a<br>20<br>25<br>FF ht<br>a a a a|<br>Poof] a|<br>0 a 0 es<br>0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C T C<br>[°C] [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>10 [3] 10 [0]<br>1 µs<br>0.5<br>o A NI ST SS ee<br>10 [2]<br>eeeCa NS ee ee or 10 µs )eit oo =e 0.2 tT |LAAVG| e<br>100 µs 10 [-1]<br>Sete | CWA 0.1 CII<br>10 [1] TI NNN TN EET Se ese Seetieeeett eeeatl eee<br>0.05<br>< EENAENE |S ROPE CCRT<br>1 ms<br>0.02<br>10 [0] FTI TTTTTNSATNLII LTT re LN<br>10 ms 0.01<br>seer | 10 [-2] Cor Ill<br>EET SER Sr<br>DC<br>TOTTI NNINCTITT ||<br>10 [-1] single pulse<br>AtiPHI ie ANNE aae a a<br>EC E EI ETNCTI CLEET CUNEATE<br>10 [-2] ELTA 10 [-3] ETT NET<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS Vv] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

5 

**OptiMOS[TM]** 5 Power-Transistor, 150 V **BSC093N15NS5** 

**==> picture [528 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
360 24<br>10V<br>SEE REeeeeee (ft | Ti] fg Pe<br>320<br>20<br>8 V<br>280<br>5.5 V<br>HSE | ee ee<br>TTT Ter/ — rT<br>240 16 6 V<br>6.5 V<br>200 FTSAE TITAAEELE LLL | eSjy fF 7 V<br>12<br>8 V<br>160 7 V<br>SYA SSS ——<br>120 8<br>6.5 V 10 V<br>80 SY ——<br>6 V 4<br>40<br>| Y/ — rs. | | 5.5 V a ee ee ee ee ee ee<br> ASR —_—_—_—_—_—__—_<br>0 Z.n nee 0 a<br>0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 175<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**==> picture [528 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
320 PT te EET TET TE EE EE 140 PF tT tte ey] ey<br>280 PTPT ttt;te; tT TETETEEEETEEETEEELLELTATT 120 PTT]PPT TTTEEPE TELLea<br>240<br>SEER EEC | GEE eeee<br>100<br>PT te tT EEE EE EE EE YA a To<br>200<br>CUPP | LE ee<br>See 80 Titi Teer EEL<br>160<br>gs seu veceveeerer<br>60<br>120<br>pitti /| az] M Useu> 2seunCEIGEED<br>PTT  ttt tt tt yy ALLELE.<br>eT TTT E ETE E EF EE 40 TYT TT TTP TTT<br>SERS<br>80<br>S 000000) Ses ee<br>Bee Aeeeeeeeeeeee<br>40 PT tt tT TTTTELAAeTE 20 TTT TPP<br>150 °C 25 °C<br>0 eT E ayy nn 0 PEEPLE EEELELELEELELL TEE ELE EEE<br>0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 160<br>V GS I D<br>[Vv] [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>I D fs g<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS[TM] BSC093N15NS5** 

**==> picture [528 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 5<br>ee a O<br>| a<br>16 [| | | | | | [| ffl | 4 SSS 1070 µA<br>107 µA<br>a a YA SSee<br>| {| | | | | | A 7L | Ffi ies<br>12 3<br>max<br>e Eee es fe<br>SS 4 OO<br>| | | OY4A | | a<br>typ<br>8 2<br>ee pf<br>| <—— OO<br>a tm |ee| | | ee{| {| | {| esa<br>4 1<br>ee ee eee se ee Ge<br>PF | [ | | [| [| | | [| esOO<br>0 ee ee ee 0 a<br>-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>] Ω<br>GS(th)<br>DS(on) V<br>R<br>**----- End of picture text -----**<br>


**==> picture [527 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>=== === 5555 === = [eee<br>SS SS A A | 25 °C a ee<br>a A | Ea se se |<br>ee | a (| 150 °C Eeee<br>Ciss 25°C max<br>SO ee es |<br>150°C max<br>NOE P e a<br>tT pe<br>Coss<br>10 [3] Pree) Ey e e<br>= e a<br>——_——— 10 [2] aeae<br>Ai ttt} ty tt te tT eT TT Tyee | eReeA eeAO_O|<br>F& 10 [2] INILLLEEEELEEELLLJN.LL Je FR-—G<br>=S5—SSS=25=5======== Po | tT FP ea |<br>; | | | TNT Crss ; [ | fT Ty tT Ty Ty<br>10 [1]<br>Fae S| COP<br>10 [1] EEL Pe RRL SS ee<br>—-|-——-------------—- a<br>EERE EEE EEE |<br>PEE EEL leh<br>10 [0] 10 [0]<br>0 30 60 90 120 150 0.0 0.5 1.0 1.5 2.0<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS[TM] BSC093N15NS5** 

**==> picture [526 x 283] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [2] -—-CL | TT ETTTT— TT—- 10 LT EL TELL LLYYiYo<br>YT TT TT TT r,<br>75 V<br>I 8 TELE EL EL TIAB TE<br>PTTTTIIN TP PNTIEIN TT TT Ly<br>PTT NEAT TUTE 25 °C TTT TT TLL LLL TAA EL<br>120 V<br>ELUTE ENING TS LE 30 V Y<br>100 °C<br>he A ZL<br>6<br>125 °C<br>z 10 [1] ANNTNSNEN fe L EE YATE[TT EEEL<br>YTAPeTT TTie IINT S-osRET TT 4 STEVE LLLP EL ERD.<br>A SS TEV LLL ELE.<br>PT TTT PTT PTI DENT<br>TE NN 2 TV) LL ELLE<br>CU TTTITS) pp<br>CLARITIN HIME) ZeerCCE<br>10 [0] 0<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>I AS V GS<br>**----- End of picture text -----**<br>


## **Diagram Gate charge waveforms** 

**==> picture [259 x 282] intentionally omitted <==**

**----- Start of picture text -----**<br>
160 Pt | tT tT TT<br>158 Pt | | | dT TT<br>| i | | | ft | Ys<br>156 Pt | fT | TT<br>Pt | | | | | YY<br>es 154 Ptee ee| ee| eerT dETY<br>ee 152 ee<br>Pe ee<br>150 Ptptt| iA| Yt} || ft<br>148 P| ty] | | | lt<br>Pi ye | | | | rt<br>146<br>PF i[A | | | | fl lt<br>PY! | | | | | ff<br>144 PT | tT tT TT<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] �5�Power-Transistor,�150�V BSC093N15NS5** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

|PACKAGE - GROU<br>NUMBER:|**PG-TDSON-8-U08**<br>P|**PG-TDSON-8-U08**<br>P|
|---|---|---|
|**DIMENSIONS**|**MILLIMETERS**||
||MIN.|MAX.|
|**A**|0.90|1.20|
|**b**|0.34|0.54|
|**c**|0.15|0.35|
|**D**|4.80|5.35|
|**D1**<br>|3.90<br>|4.40<br>|
|**D2**|0.00|0.22|
|**E**|5.70|6.10|
|**E1**|4.05<br>4.25||
|**e**|1.27<br>||
|**L**|0.45|0.65|
|**L1**|0.45|0.65|



## **Figure�1�����Outline�PG-TDSON-8,�dimensions�in�mm** 

Final Data Sheet 

9 

Rev.�2.4,��2022-07-28 

**OptiMOS[TM] BSC093N15NS5** 

## BSC093N15NS5 

## Previous Revision 

|Revision|Date|Subjects (major changes since last revision)|
|---|---|---|
|2.0|2015-10-09|Release of final version|
|2.1|2016-01-22|Update diagram 13|
|2.2|2016-06-10|Update trr and Qrr|
|2.3|2020-01-27|Update Diagrams 4, 7 and 11|
|2.4|2022-07-28|Update outline drawing|



**Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **Warnings** 

Final Data Sheet 

10

Updated at April 29, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.

Learn more →

Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.

Request a quote →

Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.

BOM Analysis service →