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BSC0923NDIATMA1
Dual MOSFET, N Channel, 30 V, 30 V, 40 A, 40 A, 0.005 ohm
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- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V;
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS Series
- Qualification: -
- Transistor Case Style: TISON
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2.5W
- Power Dissipation P Channel: 2.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 40A
- Continuous Drain Current Id P Channel: 40A
- Drain Source On State Resistance N Channel: 0.005ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.335 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC0923NDI** ## **Dual N-Channel OptiMOS™ MOSFET** ## **Product Summary** ## **Features** |• Dual N-channel OptiMOS™ MOSFET|• Dual N-channel OptiMOS™ MOSFET||||||Q1|||Q2|||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---| |• Optimized for high performance Buck converter|• Optimized for high performance Buck converter||_V_DS||||30|||30|||V| |•<br>• 100% avalanche tested<br>• Qualified according to JEDEC|•Logic level (4.5V rated)<br>• 100% avalanche tested<br>• Qualified according to JEDEC1)for target applications<br>_R_DS(on),max<br>_I_D|||_V_GS=10 V<br>_V_GS=4.5 V|||5<br>7<br>40|||2.8<br>3.7<br>40|||mW<br>A| |• Pb-free lead plating; RoHS compliant|• Pb-free lead plating; RoHS compliant||||||||||||| |• Halogen-free according to IEC61249-2-21|• Halogen-free according to IEC61249-2-21||VPhase||||||||||| **Type Package Marking** BSC0923NDI PG-TISON-8 0923NDI ~~———~~ ## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified[2)] |**Maximum ratings,**at_T_j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified|j=25 °C, unless otherwise specified=25 °C, unless otherwise specified[2)]|||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Value**||**Unit**| ||||**Q1**<br>~~a~~|**Q2**<br>~~a~~|| |Continuous drain current|_I_D|_T_C=70 °C, VGS=10V|40|40|A| |||_T_A=25 °C, VGS=4.5V3)|17|32|| |||_T_A=70 °C, VGS=4.5V3)|14|25|| |||_T_A=25 °C, VGS=10V4)|10|15|| |Pulsed drain current5)|_I_D,pulse|_T_C=70 °C|160|160|| |Avalanche energy, single pulse|_E_AS|Q1:_I_D=20 A,<br>Q2:_I_D=20 A,<br>_R_GS=25 W|9|20|mJ| |Gate source voltage|_V_GS||±20||V| |Power dissipation|_P_tot|_T_A=25 °C2)|2.5|2.5|W| |||_T_A=25 °C, minimum<br>footprint3)|1.0|1.0|| |Operatingand storage temperature|_T_ j,_T_stg<br>~~ae~~|~~ee~~|-55 ... 150||°C| |IEC climatic category; DIN IEC 68-1|~~ae~~|~~ee~~|55/150/56||| - 1) J-STD20 and JESD22 - 2) One transistor active - 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. - 4) Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active - 5) See figure 3 for more detailed information. Rev.2.0 page 1 2013-07-30 **BSC0923NDI** |**Static characteristics**|||||||| |---|---|---|---|---|---|---|---| |Drain-source breakdown voltage|Q1<br>~~ee~~|_V_(BR)DSS <br>~~ee~~|_V_GS=0 V,_I_D=10 mA<br>~~ee~~|30<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V| ||Q2<br>~~ee~~||||||| |Breakdown voltage temperature<br>coefficient|Q1<br>~~eo~~|d_V_(BR)DSS<br>/d_T_j<br>~~eo~~<br>~~ce~~|_I_D=10 mA, referenced<br>to 25 °C<br>~~eo~~<br>~~ee~~|-<br>~~eo~~|15<br>~~eo~~|-<br>~~eo~~|mV/K| ||Q2<br>~~eo~~<br>~~ce~~||||||| |Gate threshold voltage|Q1<br>~~ce~~|_V_GS(th)<br>~~ce~~|_V_DS=_V_GS,_I_D=250 µA<br>~~ee~~|1.2|-|2|V| ||Q2<br>~~ce~~||||||| |Zero gate voltage drain current|Q1 <br>~~ce~~<br>~~ie~~|_I_DSS<br>~~ce ~~<br>~~ie~~<br>|_V_DS=24 V,_V_GS=0 V,<br>_T_j=25 °C<br> ~~ee~~<br>~~ie~~|-<br>~~ie~~|-<br>~~ie~~|1<br>~~ie~~|µA| ||Q2<br>~~ie~~|||-<br>~~ie~~|-<br>~~ie~~|500<br>~~ie~~|| ||Q1<br>~~ie~~<br>~~oe~~||_V_DS=24 V,_V_GS=0 V,<br>_T_j=150 °C<br>~~ie~~<br>|-<br>~~ie~~<br>|-<br>~~ie~~<br>|0.1<br>~~ie~~<br>|mA| ||Q2<br>~~ie~~<br>~~oe~~|||-<br>~~ie~~<br>|3<br>~~ie~~<br>|-<br>~~ie~~<br>|| |Gate-source leakage current|Q1 <br>~~ee~~|_I_GSS<br>~~ee~~|_V_GS=20 V,_V_DS=0 V<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|100<br>~~ee~~|nA| ||Q2<br>~~ee~~||||||| |Drain-source on-state<br>resistance|Q1 <br>~~ee~~<br>~~a~~|_R_DS(on)<br>~~ee~~<br>~~a~~<br>~~———~~|_V_GS=4.5 V,_I_D=20 A<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~|5.4<br>~~ee~~<br>~~a~~|7.0<br>~~ee~~<br>~~a~~|mW| ||Q2<br>~~a~~|||-<br>~~a~~|3<br>~~a~~|3.7<br>~~a~~|| ||Q1<br>~~a~~||_V_GS=10 V,_I_D=20 A<br>~~a~~<br>~~———~~|-<br>~~a~~|3.8<br>~~a~~|5.0<br>~~a~~|| ||Q2<br>~~a~~<br>~~———~~|||-<br>~~a~~<br>~~———~~|2.1<br>~~a~~<br>~~———~~|2.8<br>~~a~~<br>~~———~~|| |Gate resistance|Q1 <br>~~———~~|_R_G<br>~~———~~|~~———~~|1.3<br>~~———~~|2.6<br>~~———~~|5.2<br>~~———~~|W| ||Q2<br>~~———~~|||0.5<br>~~———~~|0.9<br>~~———~~|1.8<br>~~———~~|| |Transconductance|Q1 <br>~~(ER~~|_g_fs<br>~~(ER~~||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=20 A<br>~~(ER~~|32<br>~~(ER~~|65<br>~~(ER~~|-<br>~~(ER~~|S| ||Q2<br>~~(ER~~|||43<br>~~(ER~~|86<br>~~(ER~~|-<br>~~(ER~~|| Rev.2.0 page 2 2013-07-30 **BSC0923NDI** |**Parameter**|**Symbol **|**Conditions**<br>**Values**|**Unit**| |---|---|---|---| |||**min.**<br>**typ.**<br>**max.**|| |**Dynamic characteristics**|||| |Input capacitance<br>Output capacitance<br>Reverse transfer capacitance<br>Turn-on delay time<br>Rise time<br>Turn-off delay time<br>Fall time<br>**Gate Charge Characteristics**|Q1 _C_iss<br>Q2<br>Q1 _C_oss<br>Q2<br>Q1 Crss<br>Q2<br>Q1 _t_d(on)<br>Q2<br>Q1 _t_r<br>Q2<br>Q1 _t_d(off)<br>Q2<br>Q1 _t_f<br>Q2<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~<br>~~4~~<br>~~|~~|-<br>870<br>1160<br>-<br>1500<br>2000<br>-<br>330<br>439<br>-<br>630<br>838<br>-<br>49<br>-<br>-<br>88<br>-<br>-<br>4.7<br>-<br>4.1<br>-<br>-<br>3.8<br>-<br>-<br>3.6<br>-<br>-<br>17<br>-<br>-<br>19<br>-<br>-<br>3.0<br>-<br>-<br>2.6<br>-<br>_V_GS=0 V,<br>_V_DS= 15 V,_f_=1 MHz<br>_V_DD=15 V,<br>_V_GS=10 V,_R_G=1.6W,<br>_I_D=20 A<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Pt~~<br>~~Pt ~~~~**|**~~<br>~~Ft~~|pF<br>ns| |Gate to source charge<br>Gate to drain charge<br>Gate charge total<br>Gate plateau voltage<br>Gate to source charge<br>Gate to drain charge<br>Gate charge total|Q1 _Q_gs<br>-<br>2.4<br>3.2<br>_Q_gd<br>-<br>2.2<br>2.9<br>_Q_g<br>-<br>6.7<br>10<br>_V_plateau<br>-<br>2.8<br>-<br>Q2 _Q_gs<br>-<br>4.0<br>5.3<br>_Q_gd<br>-<br>4.0<br>5.2<br>_Q_g<br>12<br>18.4<br>_V_DD=15 V,<br>_I_D=30 A,<br>_V_GS=0 to 4.5 V<br>~~|~~<br>~~PF tf|~~<br>~~|~~<br>~~Pt |~~<br>~~|~~<br>~~Pt |~~<br>~~|~~<br>~~Pt |~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**P**t |~~<br>~~|~~<br>~~|~~||nC<br>V<br>nC<br>~~|~~| |Gate plateau voltage<br>Output charge|_V_plateau<br>Q1 _Q_oss<br>Q2<br>~~+~~<br>~~oe~~|2.6<br>-<br>9<br>12<br>-<br>17<br>23<br>_V_DD=15 V,_V_GS=0 V<br>~~=~~|V<br>nC| Rev.2.0 page 3 2013-07-30 **BSC0923NDI Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode** Diode continuous forward current Q1 _I_ S - - 30 A Q2 40 _T_ C=25 °C Diode pulse current Q1 _I_ S,pulse - - 160 Q2 - - 160 Diode forward voltage Q1 _V_ SD _V_ GS=0 V, _I_ F=20 A, - 0.9 1 V _T_ =25 °C j Q2 _V_ GS=0 V, _I_ F=4 A, - 0.54 0.7 _T_ =25 °C j Reverse recovery charge Q1 _Q_ rr _V_ R=15 V, _I_ F= _I_ S, - 5 - nC Q2 d _i_ F/d _t_ =100 A/µs - 5 - nC ~~SHE~~ 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) device mounted on a minimum pad (one layer, 70 µm thick) Rev.2.0 page 4 2013-07-30 **BSC0923NDI** ## **1 Power dissipation (Q1)** _P_ tot=f( _T_ A)[3)] ## **2 Power dissipation (Q2)** _P_ tot=f( _T_ A)[3)] **==> picture [468 x 644] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 1.2<br>1 1<br>0.8 0.8<br>0.6 0.6<br>0.4 0.4<br>0.2 0.2<br>0 ANIA 0<br>0 40 80 120 160 0 40 80 120 160<br>T A [°C] T A [°C]<br>3 Drain current (Q1) 4 Drain current (Q2)<br>=f( T C)) I D=f( T C)<br>parameter: V GS≥10 V≥10 V parameter: V GS≥10 V<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 AG 0<br>0 40 80 120 160 0 40 80 120 160<br>T C [°C] T C [°C]<br>page 5 2013-07-30<br> [W] [W]<br>tot tot<br>P P<br> [A] [A]<br>I D I D<br>**----- End of picture text -----**<br> ## **3 Drain current (Q1)** _I_ D=f( _T_ C)) parameter: _V_ GS≥10 V≥10 V Rev.2.0 2013-07-30 **BSC0923NDI** ## **5 Safe operating area (Q1)** _I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p ## **6 Safe operating area (Q2)** _I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p **==> picture [466 x 612] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3 ] 10 [3 ]<br>1 µs 1 µs<br>10 [2 ] 10 [2 ]<br>10 µs 10 µs<br>100 µs 100 µs<br>1 ms<br>1 ms<br>10 [1 ] 10 ms 10 [1 ] 10 ms<br>DC<br>DC<br>10 [0 ] 10 [0 ]<br>10 [-1 ] 10 [-1 ] aN<br>10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [-1 ] 10 [0 ] 10 [1 ] 10 [2 ]<br>V DS [V] V DS [V]<br>7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance (Q2)<br> thJC=f(=f( t p)) Z thJC=f( t p)<br>parameter: D = t p// T parameter: D = t p/ T<br>10 [1 ] 10 [1 ]<br>0.5<br>0.5 10 [0 ]<br>0.2<br>0.2 0.1<br>10 [0 ]<br>0.05<br>0.1<br>0.02<br>0.05<br>10 [-1 ] 0.01<br>0.02<br>single pulse<br>0.01<br>single pulse<br>10 [-1 ] 10 [-2 ] ull<br>10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] 10 [-5 ] 10 [-4 ] 10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ]<br>t p [s] t p [s]<br>[A] [A]<br>I D I D<br> [K/W] [K/W]<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br> ## **7 Max. transient thermal impedance (Q1)** _Z_ thJC=f(=f( _t_ p)) parameter: _D_ = _t_ p// _T_ Rev.2.0 page 6 2013-07-30 **BSC0923NDI** ## **9 Typ. output characteristics (Q1)** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS ## **10 Typ. output characteristics (Q2)** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS **==> picture [472 x 644] intentionally omitted <==** **----- Start of picture text -----**<br> 160 400<br>10 V<br>4.5 V<br>10 V 4.5 V<br>120 4 V 300 4 V<br>3.5 V<br>80 200<br>3.3 V<br>3.5 V<br>3.3 V<br>3 V<br>40 100<br>3 V<br>2.8 V<br>2.8 V<br>0 Be 0<br>0 1 2 3 0 1 2 3<br>V DS [V] V DS [V]<br>11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2)<br>R DS(on)=f( I D); T j=25 °C R DS(on)=f( I D); T j=25 °C<br>parameter: V GS parameter: V GS<br>15 5<br>3.3 V<br>3.5 V<br>12 4<br>3 V 3.3 V 4 V<br>3.5 V<br>4.5 V<br>9 3<br>5 V<br>4 V<br>10 V<br>6 4.5 V 2<br>5 V<br>10 V<br>3 1<br>0 |e 0<br>0 20 40 60 80 0 20 40 60 80<br>I D [A] I D [A]<br>Rev.2.0 page 7<br> [A] [A]<br>I D I D<br>] ]<br>W W<br> [m [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br> Rev.2.0 2013-07-30 **BSC0923NDI** ## **13 Typ. transfer characteristics (Q1)** _I_ D=f( _V_ GS); | _V_ DS |>2 | _I_ D| _R_ DS(on)max parameter: _T_ j ## **14 Typ. transfer characteristics (Q2)** _I_ D=f( _V_ GS); _|V_ DS |>2 | _I_ D _| R_ DS(on)max parameter: _T_ j **==> picture [463 x 267] intentionally omitted <==** **----- Start of picture text -----**<br> 160 160<br>120 120<br>/<br>80 80<br>40 40<br>150 °C 150 °C<br>25 °C 25 °C<br>LZ Z<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V GS [V] V GS [V]<br> [A] [A]<br>I D I D<br>**----- End of picture text -----**<br> ## **15 Drain-source on-state resistance (Q1)** _R_ DS(on)=f( _T_ j); _I_ D=20 A; _V_ GS=10 V ## **16 Drain-source on-state resistance (Q2)** _R_ DS(on)=f( _T_ j); _I_ D=20 A; _V_ GS=10 V **==> picture [468 x 268] intentionally omitted <==** **----- Start of picture text -----**<br> 9 5<br>8<br>4<br>7<br>6<br>3<br>5<br>typ<br>4 typ<br>2<br>3<br>2<br>1<br>1<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>] ]<br>W W<br>[m [m<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br> Rev.2.0 page 8 2013-07-30 **BSC0923NDI** ## **17 Typ. gate threshold voltage (Q1)** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=250 µA ## **18 Typ. gate threshold voltage (Q2)** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=10 mA **==> picture [468 x 610] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8 2.8<br>2.4 2.4<br>2 2<br>1.6 1.6<br>1.2 1.2<br>0.8 0.8<br>0.4 0.4<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2)<br> =f( V DS); ); V GS=0 V; =0 V; f =1 MHz C =f( V DS); V GS=0 V; f =1 MHz<br>10 [4 ] 10 [4 ]<br>Ciss<br>10 [3 ] 10 [3 ]<br>Ciss<br>Coss<br>Coss<br>10 [2 ] 10 [2 ]<br>Crss<br>Crss<br>S a g h e<br>10 [1 ] 10 [1 ]<br>0 10 20 30 0 10 20 30<br>V DS [V] V DS [V]<br> [V] [V]<br>GS(th) GS(th)<br>V V<br> [pF] [pF]<br>C C<br>**----- End of picture text -----**<br> ## **19 Typ. capacitances (Q1)** _C_ =f( _V_ DS); ); _V_ GS=0 V; =0 V; _f_ =1 MHz Rev.2.0 page 9 2013-07-30 **BSC0923NDI** ## **21 Forward characteristics of reverse diode (Q1)** _I_ F=f( _V_ SD) ## **22 Forward characteristics of reverse diode (Q2)** _I_ F=f( _V_ SD) **==> picture [473 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> parameter: T j parameter: T j<br>10 [3 ] 10 [3 ]<br>100 °C<br>150 °C<br>10 [2 ] 10 [2 ]<br>25 °C<br>150 °C 25 °C<br>10 [1 ] 10 [1 ] -55 °C<br>10 [0 ] 10 [0 ]<br>10 [-1 ] ie 10 [-1 ]<br>0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1<br>V SD [V] V SD [V]<br>23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2)<br>I AS=f( t AV); R GS=25 W I AS=f( t AV); R GS=25 W<br>parameter: T j(start) parameter: T j(start)<br>10 [2 ] 10 [2 ]<br>25 °C<br>25 °C<br>10 [1 ] 10 [1 ] 100 °C<br>100 °C<br>125 °C<br>125 °C<br>10 [0 ] BAIN 10 [0 ]<br>10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ] 10 [0 ] 10 [1 ] 10 [2 ] 10 [3 ]<br>t AV [µs] t AV [µs]<br> [A] [A]<br>I F I F<br> [A] [A]<br>I AV I AV<br>**----- End of picture text -----**<br> Rev.2.0 page 10 2013-07-30 **BSC0923NDI** ## **25 Typ. gate charge (Q1)** _V_ GS=f( _Q_ gate); _I_ D=20 A pulsed parameter: _V_ DD ## **26 Typ. gate charge (Q2)** _V_ GS=f( _Q_ gate); _I_ D=20 A pulsed parameter: _V_ DD **==> picture [465 x 611] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>15 V<br>15 V<br>6 V<br>8 8<br>6 V 24 V<br>24 V<br>Vi Y<br>6 6<br>4 4<br>2 2<br>He [<br>0 0<br>0 2 4 6 8 10 12 14 0 10 20 30<br>Q gate [nC] Q gate [nC]<br>27 Drain-source breakdown voltage (Q1) 28 Typ. drain-source leakage current (Q2)<br> BR(DSS)=f(=f( T j); ); I D=1 mA=1 mA I DSS=f( V DS ); V GS=0 V<br>parameter: T j<br>35 10 [-2 ]<br>34<br>33 iis<br>10 [-3 ]<br>32<br>125 °C<br>31<br>100 °C<br>30 10 [-4 ]<br>29<br>75 °C<br>28<br>ie<br>10 [-5 ]<br>27<br>25 °C<br>26<br>Te e r<br>25 10 [-6 ]<br>-60 -20 20 60 100 140 180 0 5 10 15 20 25<br>T j [°C] V DSj [V]<br> [V] [V]<br>GS GS<br>V V<br> [V]<br> [A]<br>BR(DSS) I DSS<br>V<br>**----- End of picture text -----**<br> ## **27 Drain-source breakdown voltage (Q1)** _V_ BR(DSS)=f(=f( _T_ j); ); _I_ D=1 mA=1 mA Rev.2.0 page 11 2013-07-30 **BSC0923NDI** ## **PG-TISON** Rev.2.0 page 12 2013-07-30 **BSC0923NDI** ## **PG-TISON** Rev.2.0 page 13 2013-07-30 **BSC0923NDI** **Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 14 2013-07-30
Updated at June 9, 2026
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →