Image not available
Illustrative purposes only
BSC084P03NS3GATMA1
Power MOSFET, P Channel, 30 V, 78.6 A, 8400 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Transistor Polarity:P Channel; Continuous Drain Current Id:-78.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: P Channel
- Product Range: OptiMOS P3
- Qualification: AEC-Q101
- Power Dissipation: 69W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 78.6A
- Drain Source On State Resistance: 8400µohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.338 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
~~Infineon guts= 03~~ & ~~36~~ "%&$!"#['!] $ 3 ;B1= '=-: >5>?;= $ roduct @9 9 -=D 6MI[\YMZ ) 9H J ~~re~~ ' 9H"\[#$ZNd 0&, Z" * single P-Channel in SuperSO8 ~~PP~~ )# $ 9 %/0&. 6 * Qualified according JEDEC for target applications ~~Pd~~ * 150 °C operating temperature E=%I9HDC%0 * 100% Avalanche tested 8 * . ) =H =25 V, specially suited for notebook applications 6
**==> picture [421 x 337] intentionally omitted <==**
**----- Start of picture text -----**<br>
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|C`XM|@IKSIOM|=IYSQVO|@IKSQVO|
|ee|ee|
|E=%I9HDC%0|(0,E+CH|LR_|LR_|
|jscoearos|s3e|}|Tf|rent|
|!|-C59|@9|rati|gs,|at|W|=25|°C,|unless|otherwise|specified|
|@IYIUM[MY|B`UJWT|3WVLQ[QWVZ|EIT\M|DVQ[|
|$ 9|( 8|%/0&.|6|
|Continuous|drain|current|ee|ee|
|( 8|%.*&1|
|i|
|( 6|%),&1|
|$ 9$]aY_R|( 8|+#|%*((|
|Pulsed|drain|current|pf eC|
|# 6H|$ 9|' =H|"|)(-|Z@|
|Avalanche|energy,|single|pulse|eae|
|) =H|q*-|J|
|% `\`|( !|.1|K|
|( 6|*#|*&-|
|ee|
|( W|( _`T|p8|
|Operating|and|storage|temperature|a|ee|
|*.(|
|--')-('-.|
|IEC|climatic category;|DI|IEC 68-1|a|
**----- End of picture text -----**<br>
|&<br>infi<br>~~CinIneon~~<br>~~BC084033G~~|&<br>infi<br>~~CinIneon~~<br>~~BC084033G~~|&<br>infi<br>~~CinIneon~~<br>~~BC084033G~~|&<br>infi<br>~~CinIneon~~<br>~~BC084033G~~|&<br>infi<br>~~CinIneon~~<br>~~BC084033G~~|&<br>infi<br>~~CinIneon~~<br>~~BC084033G~~|&<br>infi<br>~~CinIneon~~<br>~~BC084033G~~|
|---|---|---|---|---|---|---|
|~~Cin Ineon~~<br>~~B C084 03 3G~~|||||||
|@IYIUM[MY|BUJWT|3WVLQ[QWVZ|EIT\MZ|||DVQ[|
||||UQV%|[X%|UI_%||
|'41=9<br>al characteristics|||||||
|Thermal resistance,<br>junction - case|'U@8||%|%|)&0|A'K|
|Thermal resistance,<br>junction - ambient|'U@6|*<br>6<br>i<br>2)<br>¢<br>cooling are|%|%|-(||
|W<br>Electrical characteristics, at<br>=25 °C, unless otherwise specified|||||||
|&<br>tatic characteristics|||||||
||)"7G#9HH|)=H<br>$94%*-(#6|%+(|%|%|J|
||)=H"U#|)9H4)=H $9|%+&)|%*&-|%)&1||
|Zero<br>gate<br>voltage<br>drai<br>t<br>ero gate voltage<br>drain curren<br>~~Gate-sourceleakagecurrent~~|$9HH<br>~~P|~~|)9H<br>)=H<br>(W<br>~30V,<br>=OV,<br>=95 °C|%|%|%)|r6|
|||)9H<br>)=H<br>(W<br>=-30 V,<br>=0V,<br>=125 °C<br>~~P|~~<br>~~=-25V,~~<br>~~=0V Pf]~~|%<br>~~Pf]~~|%<br>~~Pf]~~|%)((<br>~~Pf]~~||
|~~Gate-sourceleakagecurrent~~<br>Drain-sourceon-stateresistance|$=HH<br>~~P|~~|)=H<br>)9H<br>~~P|~~<br>~~=-25V,~~<br>~~=0V Pf]~~<br>~~=6V,=-30APp~~|%<br>~~Pf]~~<br>~~Pp ff~~|%<br>~~Pf]~~<br>~~ff~~|%)((<br>~~Pf]~~<br>~~ff~~|[6|
|~~Gate-source leakage current~~<br>Drain-source on-state resistance|'9H"\[#<br>~~P|~~|)=H<br>$9<br>~~P|~~<br>~~=-25 V,~~<br>~~=0V Pf]~~<br>~~=6V,=-30APp~~|%<br>~~Pf]~~<br>~~Pp ff~~|0&,<br>~~Pf]~~<br>~~ff~~|),&(<br>~~Pf]~~<br>~~ff~~|Z"|
|||)=H<br>$9<br>~~=6V, =-30A Pp~~|%<br>~~Pp ff~~|.&)<br>~~ff~~|0&,<br>~~ff~~||
||'=||%|*&*|%|"|
|I^N[_P\[QaPN[PR|,S_|g)9Hg5*g$9g'9H"\[#ZNd<br>$9|++|..|%|H|
|*#<br>Device on 40 mm x40 mm x 1.5 mm epoxy PCB FR4 with6c_<br>(one layer, 70<br>m thick) copper area for drain<br>connection. PCB is vertical in still air.<br>>)See Fig. 3|||||||
*#
## & ~~Infineon SB 084 03S~~
|&<br>infi<br>~~Infineon SB SB084 03S 03S~~|&<br>infi<br>~~Infineon SB SB084 03S 03S~~|&<br>infi<br>~~Infineon SB SB084 03S 03S~~|&<br>infi<br>~~Infineon SB SB084 03S 03S~~|&<br>infi<br>~~Infineon SB SB084 03S 03S~~|&<br>infi<br>~~Infineon SB SB084 03S 03S~~|&<br>infi<br>~~Infineon SB SB084 03S 03S~~|
|---|---|---|---|---|---|---|
|~~Infineon SB SB 084 03S 03S~~|||||||
|@IYIUM[MY|BUJWT|3WVLQ[QWVZ|EIT\MZ|||DVQ[|
||||UQV%|[X%|UI_%||
|-9<br>Dy<br>ic characteristics|||||||
||!V__|)=H<br>)9H<br>+<br>" J<br>=0V,<br>=-15V,<br>=1<br>~~P|~~|%|+)1(|,/0-|]<|
|;<br>Output capacitance<br>~~Reversetransfercapacitance~~|!\__<br>~~P|~~||%<br>~~Pf]~~|)-*(<br>~~Pf]~~|**0(<br>~~Pf]~~||
|~~Reversetransfercapacitance~~|!^__<br>~~P|~~||%<br>~~Pf]~~|))(<br>~~Pf]~~|).-<br>~~Pf]~~||
|~~Reverse transfer capacitance~~|.Q"\[#<br>~~P|~~|)99<br>)=H4%<br>$9<br>'=<br>"<br>~~P|~~<br>10V,<br>=-50A,|%<br>~~Pf]~~|).<br>~~Pf]~~|*-<br>~~Pf]~~|[_|
||.^||%|)+,|*((||
||.Q"\SS#||%|++|-(||
||.S||%|0|)*||
|#<br>Gate Char e Characteristics|||||||
||&T_|)99<br>$9<br>)=H|%|)-|*(|[8|
||&T"U#||%|-|/||
||&TQ||%|/|))||
||&_c||%|)/|*,||
||&T||%|,+|-0||
||)]YNRNa||%|,&/|%|J|
||&\__|)99<br>)=H|%|+-|,.|[8|
|%<br>everse Diode<br>~~Diodecontinousforwardcurrent~~<br>~~P|~~<br>~~Pf]~~|||||||
|~~Diodecontinousforwardcurrent~~|$H<br>~~P|~~|(8<br>~~P|~~<br>=25 °C|%<br>~~Pf]~~|%<br>~~Pf]~~|/0<br>~~Pf]~~|6|
|~~Diode continous forward current~~|$H$]aY_R<br>~~P|~~||%<br>~~Pf]~~|%<br>~~Pf]~~|*((<br>~~Pf]~~||
|Diode<br>forward<br>volt<br>iode forward<br>voltage|)H9|)=H<br>$<<br>(W<br>OM<br>804,<br>=95 °C|%|%|%)&)|J|
|R<br>ti<br>everse recovery time|.^^|)G<br>$<4g$H<br>Q-<'Q.<br>C<br>=15V,<br>|,<br>=100 A/|%|,-|%|[_|
||&^^||%|-(|%|[8|
||||||||
&
% `\`4S"( 8#
$ 94S"( 8 ys | =H[g]["]
**==> picture [8 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
?<br>**----- End of picture text -----**<br>
**==> picture [431 x 559] intentionally omitted <==**
**----- Start of picture text -----**<br>
/' /'<br>.' .'<br>-' -'<br>,' ,'<br>+' +'<br>*' *'<br>)' )'<br>(' ('<br>| ' | | ' -<br>' +' /' ()' (-' ' +' /' ()' (-'<br>' " [°C] ' 3 [°C]<br>3 afe operati g area 4 ax.tra >51: tther ali <10-: /1<br>$ 94S") 9H yy ( 8 =25°C )# ; " 4( * `U@H4S". ]#<br>parameter: . ] parameter: " 4. ]'(<br>(' [*] (' [(] ('<br>1 C<br>)( r_<br>(' [)] (' ['] ( (&-<br>100 C<br>(&*<br>< =,<br>(&)<br>(&(-<br>(&(*<br>(' [(] aN 1ms (' [$(] '%( (&()<br>limited by on-state 7<br>^R_V_`N[PR 10 ms single pulse<br>98<br>(' ['] (' [$)] '%'('%''''( '%'''( '%''( '%'( '%( ( ('<br>(' [$(] (' ['] (' [(] (' [)] (' [$,] (' [$+] (' [$*] (' [$)] (' [$(] (' ['] (' [(]<br>!( 4B + X<br>,<br>$ [W[ !# 4<br>,<br> 4<br>!#<br> [P9B<br>)<br>**----- End of picture text -----**<br>
&
/1
**==> picture [426 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
$ 94S") 9H ); ( W =25°C ' 9H"\[#4S"$ 9 ); ( W =25°C<br>parameter: ) =H parameter: ) =H<br>.' *'<br>40V -5.0V<br>-' -6.0V ),<br>-40V<br>,'<br>)'<br>%,&-J<br>+'<br>x 5E<br>— 45V (,<br>*'<br>-3.5V -5.0V<br>('<br>)' -6.0V<br>| 4.0V “10V<br>,<br>('<br>-3.5.V<br>' '<br>' ( ) * ' (' )' *' +'<br>!( 4B !# 4<br>H<br> 4<br>!#<br> 4B!WV"<br>&<br>**----- End of picture text -----**<br>
**==> picture [63 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
>/;: 0@/?-: /1<br>**----- End of picture text -----**<br>
**==> picture [127 x 11] intentionally omitted <==**
**----- Start of picture text -----**<br>
$ 94S") =H ys | 9H [g5*g][$] 9 [g]['] 9H"\[#ZNd<br>**----- End of picture text -----**<br>
**==> picture [48 x 11] intentionally omitted <==**
**----- Start of picture text -----**<br>
, S_4S"$ 9 yy ( W<br>**----- End of picture text -----**<br>
**==> picture [420 x 265] intentionally omitted <==**
**----- Start of picture text -----**<br>
parameter: ( W<br>-' /'<br>,'<br>-'<br>+'<br>| *' | +'<br>)'<br>)'<br>(' 25 °C<br>150°C<br>' '<br>' ( ) * + , - ' (' )' *' +' ,'<br>!( 7B !# 4<br>,<br> 4 NZ<br>!# *<br>**----- End of picture text -----**<br>
&
/1
' 9H"\[#4S"( W ); $ 9 =-30 A; ) =H
) =H"`U#4S"( W ); ) =H4) 9H >; $ 9 =-105 #6
**==> picture [428 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
() +<br>*%,<br>(' * ZNd&<br>)%,<br>| `e]&<br>/ )<br>ZV[&<br>(%,<br>`e]&<br>- (<br>'%,<br>+ '<br>$-' $)' )' -' ('' (+' (/' $-' $)' )' -' ('' (+' (/'<br>' R PC] ' R PC]<br>11 Typ. capacita /1> 12 Forward characteristics of reverse diode<br>! 4S") 9H ): ) =H =0V; + =1 " J $ <4S") H9#<br>H<br>GU<br> 7B![P"<br>& 4B!WV" !(<br>**----- End of picture text -----**<br>
**==> picture [423 x 265] intentionally omitted <==**
**----- Start of picture text -----**<br>
parameter: ( W<br>(' [+] (''<br>8V__<br>8\__<br>(' [*] ('<br>im x 150 °C, typ [<br>25 °C, typ<br>(' [)] (<br>25 °C, 98%<br>8^__<br>(' [(] '%(<br>( - )( )- *( *- +( ' '%, ( (%,<br>!( 4B !( B4<br>" # 6<br>**----- End of picture text -----**<br>
**==> picture [83 x 28] intentionally omitted <==**
**----- Start of picture text -----**<br>
&<br>B C084 03 3G<br>**----- End of picture text -----**<br>
**==> picture [428 x 304] intentionally omitted <==**
**----- Start of picture text -----**<br>
$ 6H4S". 6J ); ' =H =25 " ) =H4S"& TN`R ); $ 9 =-50A pulsed<br>parameter: ( W"_`N^`# parameter: ) 99<br>(' [)]<br>('<br>0<br>/<br>-15V<br>25 °C . 6V -24V ‘<br>100 °C -<br>2.<br>(' [(] 125 °C ,<br>+<br><<br>*<br>)<br>(<br>'<br>' (' )' *' +'<br>(' [']<br>(' ['] (' [(] + 1E [us] (' [)] (' [*] !% OI[M [ Cc]<br>><br> 7B<br>!(<br> 1E<br>!#<br>**----- End of picture text -----**<br>
**==> picture [106 x 10] intentionally omitted <==**
**----- Start of picture text -----**<br>
) 7G"9HH#4S"( W ); $ 9 =+-250 #6<br>**----- End of picture text -----**<br>
**==> picture [203 x 245] intentionally omitted <==**
**----- Start of picture text -----**<br>
*-<br>*+<br>*)<br>*'<br>)/<br>)-<br>$-' $)' )' -' ('' (+' (/'<br>' R [°C]<br> 2A!4BB<br>!(<br>**----- End of picture text -----**<br>
**==> picture [187 x 207] intentionally omitted <==**
**----- Start of picture text -----**<br>
( =H<br>& ,<br>) T _"`U#<br>& T"`U# & _c % OI[M<br>& T_ & TQ<br>**----- End of picture text -----**<br>
&
$ @?85: 1
## @7$C4B?>$/
## & ~~B C084 03 3G~~
> -@9AB?4D=A@ For further information on technology, delivery terms and conditions and prices, please contact the
> 34B@=@;C Due to technical requirements, components may contain dangerous substances. For information on
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →