Image not available
Illustrative purposes only
BSC0805LSATMA1
Power MOSFET, N Channel, 100 V, 79 A, 6000 µohm, TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 83W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 83W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.006ohm
- Transistor Case Style: TDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 79A
- Drain Source On State Resistance: 6000µohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.762 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC0805LS**
## **MOSFET OptiMOS[TM]** 5
## **Features**
**==> picture [138 x 111] intentionally omitted <==**
**----- Start of picture text -----**<br>
SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>5S, "ing,<br>Pro :<br>1 4<br>3<br>2 3 ; 2 1<br>4<br>**----- End of picture text -----**<br>
|**Parameter**<br>~~Table1~~<br>~~KeyPerformance~~|**Value**<br>~~PerformanceParameters~~|**Unit**<br>~~Parameters~~|
|---|---|---|
|_V_DS<br>~~Table 1~~<br>~~Key Performance~~|100<br>~~Performance Parameters~~|V<br>~~Parameters~~|
|_R_DS(on),max|7|mΩ|
|_I_D|79|A|
|_Q_oss|41|nC|
|_Q_G(0V..4.5V)|16|nC|
**==> picture [108 x 63] intentionally omitted <==**
**----- Start of picture text -----**<br>
S 1 LI a 8 D<br>S 2 7 D<br>S 3 il (=) [ 6 D<br>G 4 af : 5 D<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links|
|---|---|---|---|
|BSC0805LS<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TDSON-8<br>~~**|**~~|0805LS|-|
Final Data Sheet
1
**OptiMOS[TM] 5�Power-Transistor,�100�V BSC0805LS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.�2.0,��2019-04-03
**OptiMOS[TM] 5�Power-Transistor,�100�V BSC0805LS**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|79<br>61<br>14|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W1)|
|Pulsed drain current2)|_I_D,pulse|-|-|318|A|_T_A=25°C|
|Avalanche energy, single pulse3)|_E_AS|-|-|70|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|83<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|0.9|1.5|°C/W|-|
|Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|50|°C/W|-|
> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
> 2) See Diagram 3 for more detailed information
> 3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2019-04-03
**OptiMOS[TM] 5�Power-Transistor,�100�V BSC0805LS**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=49µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|6.0<br>7.7|7.0<br>8.5|mΩ|_V_GS=10V,_I_D=40A<br>_V_GS=4.5V,_I_D=20A|
|Gate resistance1)|_R_G|-|1.0|1.5|Ω|-|
|Transconductance|_g_fs|36|73|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=40A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2100|2700|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|340|440|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|16|28|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|6.5|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|3.6|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|20|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|5.3|-|ns|_V_DD=40V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|7|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|4|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate to drain charge1)|_Q_gd|-|6|8|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|9|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate charge total1)|_Q_g|-|16|20|nC|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|3.2|-|V|_V_DD=50V,_I_D=40A,_V_GS=0to4.5V|
|Gate charge total, sync. FET|_Q_g(sync)|-|26|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|41|54|nC|_V_DS=50V,_V_GS=0V|
> 1) Defined by design. Not subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.0,��2019-04-03
4
**OptiMOS[TM] 5�Power-Transistor,�100�V BSC0805LS**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|70|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|317.6|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=40A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|21|42|ns|_V_R=50V,_I_F=40A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|12|24|nC|_V_R=50V,_I_F=40A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not subject to production test. Final Data Sheet
Rev.�2.0,��2019-04-03
5
**OptiMOS[TM] BSC0805LS**
**==> picture [539 x 284] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 80<br>FSC CEE EEE EEE SPN<br>a a 70 PL LTTNEEEEELL<br>80 PeeS a = Ot} tt tt th} tT ttt PTTSaasETINEFEEEELEN , LL L<br>Seee PR PY fp 60 ERG\<br>a 50 PTT ETE EE ENELLE<br>60<br>ERE ARE EEE EE PTT ETE ETE ENELE<br>Ss FCEEEE REE ELE \<br>BFS [itieeereeheeeeererTriIntrp le|£ 40 [Fey i tye ty tEN EL<br>a Pi TTT TEEPE EL LXE EI<br>40<br>ipit py tT Pp iN tT tT tt 30 PTT ETE EEL EL ELIN EE<br>a<br>fd PET TEEPE EELELLLALLI<br>a 20 PTTETEEEL AL\<br>20 a Ft tt tt ttt ttt dd A<br>a A SEH 10 PTT ETEPEELE<br>CEE TAG<br>EEE eee "FEE<br>i CEE EEL A|<br>0 a 0 PT tT E EE EEE EEE [EEE]<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>T C T C<br>[°C] [°C]<br>1 P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br>
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>single pulse<br>0.01<br>ARST CETTE 0.02 A<br>1 µs 0.05<br>10 [2] COIS 10 µs Tay CT I 0.10.2 UE TTT<br>0.5<br>ESS OSS 10 [0] E W T LU eee<br>100 µs<br>7 ANT 10 ms TT er | UI<br>10 [1] PAN ee || ee e e n<br>SSSR 1 ms<br>ce SEH N ee [e SueaN ees HH Eh<br>DC<br>fA Sv<br>10 [0] eeeer<br>10 [-1]<br>Ben eee ee ad ee a eee Memwee’CT AMMB NBN<br>10 [-1]<br>SHeeeeeeeeeeee ee eee ee eae, aa | CHEEa ee CHIE TTT<br>gn | UTNE<br>10 [-2] ee [ee] 10 [-2] EIN-LEILA<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS VI t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS[TM] BSC0805LS**
**==> picture [531 x 641] intentionally omitted <==**
**----- Start of picture text -----**<br>
320 20.0<br>10 V<br>280 E TTTTTT EE 17.5 FAY) 2.8 V PEE) Ye | |<br>TA EEE<br>5 V<br>3 V<br>240 LET A ere 15.0 |<br>He | IT<br>3.5 V<br>200 ETT AT A EE 12.5 AVY ELE Ey<br>HA / ,<br>4.5 V 4 V<br>160 10.0<br>4.5 V<br>= Hig |<br>THe | eee ocr<br>120 LV 7.5 - _ -<br>5 V<br>4 V<br>HWA ee<br>10 V<br>80 5.0<br>A ET ee<br>3.5 V<br>40 foA) Jaane 2.5<br>3 V<br>2.8 V<br>0 ——————Pao 0.0 SPELLELT LEER<br>0 1 2 3 4 5 0 20 40 60 80 100 120 140 160<br>V DS I D<br>[Vv] [A]<br>|) I D=f( V DS T j 25°C; parameters V GS 25 R DS(on)=f( I D T j "Ci parameters V GS<br>[Dlagram 7: Typ. transfer characteristics | Diagram: Typ.drain-source on resistance |<br>280 20.0<br>COE<br>25 °C<br>PEERsusvestesazevestonszazetal EE EPP TGA | GPT<br>240 COPEat 17.5<br>COE<br>COE<br>15.0<br>200 eee | IN<br>COC 150 °C<br>PEERS000 80eEEESee NuN<br>COE 12.5 a<br>160 COCA | 150 °C Lt<br>-££ COO(Oooo ||, 10.0 | il TH<br>120 CEE<br>COCAS000 TTT NTT\<br>COC 7.5 a7<br>25 °C<br>80<br>COC E 5.0 HTTP nee| TTT<br>COC fA<br>S000<br>40<br>20000, 2.5<br>COCOsusvestesazarestcozeztee | PATTON<br>COCO<br>0 eer oo 0.0<br>0 Hecaee 1 caaeeceeecs 2 3 4 5 | 0 {(PIMIPIMMIMI 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>PE parameters Ts AOA parameter:<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
Final Data Sheet
7
**OptiMOS[TM] BSC0805LS**
**==> picture [528 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.0 PTT TEL LELELELELELEL PPP 2.4 LTT TET TTT Tey ery yy ee TT<br>PTT TLL LLLP BRR<br>CCCP FCEPRECCECECECCECECL<br>2.0<br>SC SCERSERECEL<br>1.6 LT TNLEN EE EEE EEE EE<br>L [A] EEEEE EECELEE<br>oO A MA ~<br>1.6<br>°& PY TTT EET TE YEE PLT TT TT TTT NPEET TTT TT<br>n 4 LET EET TTT TT TENETET<br>1.2<br>2 PY ET TEEPE TTT TET PEE BUA<br>ba® TCEPCT TTTTE) pe LTT TTee TTT eT | NEENNTEET ET TE<br>N ttt tt TerlA =>a 1.2 te p ee fp EEE PSSM~<br>490 µA<br>BEER5 0.8 Cee SEEEEEEEEEEEEEEETTRS |<br>Q PT TTT Lee EEE EET ~<br>= Tae— PEELE 0.8 BERR 49 µA<br>no§ PET TTT EEE EEE EE EEE FEEEEEEEEEE Eee eee<br>0.4<br>rT TELLTALE TT 0.4 LTT T ETE E TEE pT TEE Ey Ey Ey Ey yy<br>POAC FE p fqee<br>0.0 PLTPETEETT TEEPETET TET TET EEEEETEEPEEEEETT 0.0 FECEEEETTFEEEEEEEEEEELLLLLLLLLLLPET TT FFTLI<br>-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>
**==> picture [530 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>EEE EEE EEE EEE SSS SS SSeS<br>HERR E EEE EEE EE EEE EEE 4 25 °C AEE EE EEE EEE<br>Yr | Tt tT | tT ee te te eT tT rE rT Thr hE cE hr hh TT (| 25 °C, max ERR<br>a 7 150 °C FEC<br>150 °C, max<br>FETT TEE Tey ET ET EET EET I He<br>Ciss<br>\ a nnn EnRREEEEEEE MAOSEROO ER APRRUD REEDED?” cannne<br>WEEE EE E<br>10 [3] 10 [2]<br>REESE EEE BEER EEE EE EEE EEE ee<br>eo& ERSeePoeoococceeEEE $s REEeeeEEE Pe EEEEEEEEEEeeeeeeEEE EEE OEEAoAEEEooo<br>MEE he EE x PELL TEEPE Aye<br>Coss<br>AST SOUT RRTATTRRTARTACEGRRRITTARA<br>PANEER EEE VEEP<br>10 [2] 10 [1]<br>SS Se<br>eept eee AA a|<br>(| yt| yt| | NN| NET TT TT TTT TT eT eT TT A(TTT Ty Te Ty yt ie Tope TP TTeeTT TT TT<br>a EEC CECE eer<br>FETT TEE NEE EET TEE EET TET PETE EEE TTT TaeEEE<br>FEE SBRELEP HHT PELLET LLG EEE<br>PLEELELLEL Crss<br>10 [1] Pipe He TLE 10 [0] EEEEEELLLLELLETEEE EEE<br>0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS IV] V SD IV]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS[TM] BSC0805LS**
**==> picture [526 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] -_ EE EEE EEE 10 SS eee<br>ee 20 V 2 ae<br>a | 50 V PT tT | tT Tt<br>a Na a see ee 1 80 V Bee ae<br>N RENT N S~ ee<br>STINET|N NO NU TH | 8 e EEEEEEEEEEee EEEsee<br>10 [1]<br>PSSM EHTINE THT SS00000000//40000<br>eS es ee<br>pT NT ONG ART TTT 6 7,4<br>aSP PONENTCNS NN 25 °C S eeeeee7eee eeeeee<br>PE eNTEN SS = SE er<br>ee aNN 100 °C 4 eer tye{|<br>10 [0]<br>J_|_}_}}}}}}}_}_} |} tty} _} No Lt | | pw tT Et<br>oe es [<br>125 °C<br>0SSHrTYT TETT TTT TTT | 2 a2)ee)CCee 2ORP eetteee eee<br>UW, A/20SSSee ee<br>10 [-1] EE EI |) 0 AGERE EEE ES<br>10 [0] 10 [1] 10 [2] 10 [3] 0 4 8 12 16 20 24 28 32<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =40A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>
**==> picture [423 x 298] intentionally omitted <==**
**----- Start of picture text -----**<br>
Diagram Gate charge waveforms<br>108 LTT TT TT tt ttt ttt tt ty tt tt<br>Ptr tr trt tt tt tt tt tt tt te et et<br>rT TTT tt ttt ttt tt tt tet tt tt<br>Ptr tr trt tt tt tt tt tt tt te et et Vocs<br>106 TTTrT TTTTTTtttiT tT ttttT ttttttettttttyettyet yttteT TyYT Q<br>rT TTT Ti tT tT tte tee tet ee yey YT Tf g<br>rT TTT tt tt ttt ttt tt tt tq tf<br>LTT TTT tT tT tT te tee et tT eT TAT YT<br>104 rTPtrTTTtr ttttt tttttt ttt tt tttt tttt tAtye ettT<br>rT ttt tt tt ttt ttt tt Yi tt tt<br>S= PtrLtt trttt ttt ttt ttt tt tt tttt tt tAty ty tett ettT<br>102 rTTTTTTTTTTtTITT ttttT ttt ttttT tA yt TTTTeT yteeeTeT<br>rT TTT tt ttt t tt vi tt tt tt tt<br>Ptr tr? ttt ttt tA te te ty et<br>rT TTT tTTtttt iA TTT ty tT TT<br>100 rtrT rTtrTtrTTTT tttttttytTATtttTT tttt tytt tytt eTtt td<br>Ptr tr ttt Tye tt tt tt te ty ty<br>TTT TT TIitTAvAtT tte eT Tt et ey eT<br>rTT TT tT TT tT te te tT tT TT TI<br>98 rTITTITrTT TTITIAL yYtt ttITTttTTTtt tTtteTttye yett ttTT ft O<br>rrTTiTPCE EEE EEE EEE Rom| | ew<br>LTi TA A T TTeTTTT tt t Tt t tt t Ttet tetT t TttT tttT<br>96 TTITAZALTLITTIETIETtET titty tt tt tt ty Qa<br>-80 -40 0 40 80 120 160<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM] BSC0805LS**
**==> picture [45 x 14] intentionally omitted <==**
**----- Start of picture text -----**<br>
PROJECTION<br>**----- End of picture text -----**<br>
Final Data Sheet
10
**OptiMOS[TM] BSC0805LS**
Final Data Sheet
11
**OptiMOS[TM] BSC0805LS**
## BSC0805LS
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-04-03|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
12
Updated at March 10, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →