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BSC0803LSATMA1
Power MOSFET, N Channel, 100 V, 44 A, 0.0122 ohm, PG-TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 52W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 44A
- Drain Source On State Resistance: 0.0122ohm
- Gate Source Threshold Voltage Max: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.444 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**BSC0803LS** ## **MOSFET** ## **OptiMOS** ## **Features** **==> picture [138 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>5S, "ing,<br>Pro :<br>1 4<br>3<br>2 3 ; 2 1<br>4<br>**----- End of picture text -----**<br> |**Parameter**<br>~~Table1~~<br>~~KeyPerformance~~|**Value**<br>~~PerformanceParameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS<br>~~Table 1~~<br>~~Key Performance~~|100<br>~~Performance Parameters~~|V<br>~~Parameters~~| |_R_DS(on),max|14.6|mΩ| |_I_D|44|A| |_Q_oss|20|nC| |_Q_G(0V..4.5V)|7.6|nC| **==> picture [108 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> S 1 LI a 8 D<br>S 2 7 D<br>S 3 il (=) [ 6 D<br>G 4 af : 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links| |---|---|---|---| |BSC0803LS<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TDSON-8<br>~~**|**~~|0803LS|-| Final Data Sheet 1 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0803LS** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.�2.1,��2019-05-20 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0803LS** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|44<br>28<br>10|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W1)| |Pulsed drain current2)|_I_D,pulse|-|-|176|A|_T_A=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|30|mJ|_I_D=20A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|52<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance,junction - case|_R_thJC|-|1.4|2.4|°C/W|-| |Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|50|°C/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.1,��2019-05-20 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0803LS** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=23µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|12.2<br>15.8|14.6<br>20.8|mΩ|_V_GS=10V,_I_D=22A<br>_V_GS=4.5V,_I_D=11A| |Gate resistance1)|_R_G|-|1|1.5|Ω|-| |Transconductance|_g_fs|19|38|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=22A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|1000|1300|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Output capacitance1)|_C_oss|-|170|220|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|9|15|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=50V,_V_GS=10V,_I_D=22A,<br>_R_G,ext=3Ω| |Rise time|_t_r|-|3|-|ns|_V_DD=50V,_V_GS=10V,_I_D=22A,<br>_R_G,ext=3Ω| |Turn-off delay time|_t_d(off)|-|14|-|ns|_V_DD=50V,_V_GS=10V,_I_D=22A,<br>_R_G,ext=3Ω| |Fall time|_t_f|-|3|-|ns|_V_DD=50V,_V_GS=10V,_I_D=22A,<br>_R_G,ext=3Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|3.3|-|nC|_V_DD=50V,_I_D=22A,_V_GS=0to4.5V| |Gate charge at threshold|_Q_g(th)|-|1.7|-|nC|_V_DD=50V,_I_D=22A,_V_GS=0to4.5V| |Gate to drain charge1)|_Q_gd|-|2.8|4.2|nC|_V_DD=50V,_I_D=22A,_V_GS=0to4.5V| |Switchingcharge|_Q_sw|-|4.4|-|nC|_V_DD=50V,_I_D=22A,_V_GS=0to4.5V| |Gate charge total1)|_Q_g|-|7.6|10|nC|_V_DD=50V,_I_D=22A,_V_GS=0to4.5V| |Gate plateau voltage|_V_plateau|-|3.3|-|V|_V_DD=50V,_I_D=22A,_V_GS=0to4.5V| |Gate charge total, sync. FET|_Q_g(sync)|-|13|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge1)|_Q_oss|-|20|27|nC|_V_DS=50V,_V_GS=0V| > 1) Defined by design. Not subject to production test. > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.1,��2019-05-20 4 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0803LS** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|47|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|176|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=22A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|26|52|ns|_V_R=50V,_I_F=22A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge1)|_Q_rr|-|19|38|nC|_V_R=50V,_I_F=22A,d_i_F/d_t_=100A/µs| 1) Defined by design. Not subject to production test. Final Data Sheet Rev.�2.1,��2019-05-20 5 **OptiMOS BSC0803LS** **==> picture [539 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> 60 50<br>FEEEEEEEEEEEEEES |) EREREEEEES<br>e e i<br>50 a i a s O<br>40<br>EEEREEEEEEEEEEES OO<br>REE REE EE EE EEE fo eeSEERNCEEEEEEEEEGee<br>40 aEEEEREEEEEEEEEEA | aEEREee AREeeeee<br>30<br>EERE<br>es FEPrPrrrPKRerrrrrrrENE EEEEEESS |jo GEREEERERKEFEEEEPeeper<br>2 Re eee<br>30 frre Nee) Bee eee<br>| | [| [| | | [ | \ TT JT T 7 Tt TT Tf N<br>20<br>SEEEEEEENEEEEESE ) GRREEEEECENEE<br>20<br>FEEEEEEEESEEEEEEoe ) EEREREREEEEENEEEi aOO<br>ee fs<br>10<br>10<br>eeEEEEEEEEEEEREEES fo peeGEEEEEEEEEEEpe PY ECAR<br>———————— ————— FrPrrfryryys<br>eee PrPrrrrrrerereyyy yyy<br>0 ee 0 i a ees yyy<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>T C [°C] T C [°C]<br>0 P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] 10 [2]<br>single pulse<br>0.01<br>0.02<br>CH AS E 0.05<br>10 [2] I HHH || 0.1 it jet asad<br>0.2<br>SEH LSSATIN 10 µs 1 µs SteLT 10 [1] 4 0.5 AHE EHH<br>4 NANUOND TH I<br>10 [1]<br>100 µs<br>1 ms 10 [0]<br>2 AA EB e r UT<br>10 [0] 10 ms<br>= DC Lebar CUM TTT CTT TTT<br>10 [-1]<br>10 [-1] aateseaean eareceee, ee eee:| SSEZASt<br>BE RP NNeee LT TTT<br>SEE aera | ORTH<br>eeee | LR Era<br>10 [-2] CCT 10 [-2] UUM LETTE ETI LEI EU<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS BSC0803LS** **==> picture [528 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 175 40<br>10 V 7 V<br>) Too<br>150 Vi[/ 35 STSTC0E8 (RROSSR<br>30 3 V<br>125 A 5 V INAE TAREESERRE<br>Ye ZO 3.2 V<br>25<br>100 [ff] Y 4 3.5 V<br>4 V<br>=<br>TUTTI | eager 4.5 V<br>z // / 4.5 V 20 7 A.<br>AAU e [EAA<br>feMoor Terre 5 V<br>75<br> | i o=-—<br>15<br>7 V<br>4 V<br>50<br>10 V<br>yt) | sees 10<br>25 U7ffPTTa 3.5 V 5 SUSHEQRRRR0R0R0ERERRRER0E<br>3.2 V<br>3 V<br>JERoTeee 2.8 V SURUEUEHEHEHR00R000000000SCO eo<br>0 0<br>0 1 2 3 4 5 0 20 40 60 80 100<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>80 40<br>UEP) TOT<br>35<br>STAT] ) epee<br>60 30<br>| | PEPPER<br>25 °C<br>a COTA<br>| Amt eee 25 eAEUUERSCUEEEEEEEELE<br>150 °C<br>150 °C<br>TTT / e COCCI(OOSRE<br>40 20<br>Zz TTT]. PEPER<br>TTT) | 15 EERE<br>25 °C<br>20 TTT TTA][} | 10 SUERRRGRUERSCHRERERRREEHCTPepe eeePoo<br>TTT/ PeeperSUSHESERRS0R0000000000000<br>5<br>TTT DATZ | FERRCC E R<br>0 0<br>0 1 2 3 4 5 6 0 2 4 6 8 10<br>V GS [V] V GS [V]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS BSC0803LS** **==> picture [530 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 2.4<br>PTTL ELIE ELL LLL PCLEELEELELELLELEEELELEELL<br>PTT TLL TTT LLL LET EET TT TEP erty Ey ET ET<br>CCCP ECERECCECECECECECL<br>2.0<br>1.6 PTT TTT TTT TET TTT TT YTL C OACRERCOOSACEE<br>PITT TTT TTT TTT TT ET EPAV4 PIETY PNAS| a<br>1.6<br>eA | EEEEEEEPSRSERSEEEEEEE<br>ra2 1.2 BEER CEEOLSf FCECELCCCFCCCELCELENCEELEN<br>5s LLL TTTTAT Tp eee<br>oO A > ~~<br>1.2<br>230 µA<br>E2 0.8 PLCeeee EEE EE EEE FETTCECETT TT TTCECE TTT CELtT N XS 23 µA<br>= <TH 0.8 FCCC EC CEC EEE<br>5no PLE TL TET ELPE EL ELL EL PEELE FEE ELELEEE ELLE<br>0.4<br>0.4<br>PEELE EEE ETETP EP EP EP ep pep EP EEE<br>PTET TET EEE EL EEL EL PEELE LLL FREE EEEEEE<br>0.0 PEELPTET TET ELE TELELEELELLEL EL EEL EL PEELEPEELE LL LLLLE 0.0 FEELCEEECELFEEEEEEEEEEELLLLLLLLLLL EEL EEELI<br>-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>10 [4] 10 [3]<br>===========_=====_====——= F 25 °C e<br>ee Se ae<br>a eG CI 25 °C, max FOC EEEECEEEEEEEEEEEE<br>rT TTT teteeTTT TT eeeee tteeeeee ([ | 150 °C E REEEERR<br>FCCCECE " 150 °C, max PCEEECECEEELEE<br>10 [3] Ciss<br>I MU RHERE EO RRRRUEOERERUEDERERD<br>Sea a eee TELL Lee|<br>FCC ESSE EEE EEE EEE 10 [2] BRERA<br>v7 pitt TTP TPN Tee tT EECEE EEE EEE EEE ERASEEE<br>& 10 [2] ERNEWhitt)NE ee| reeAMEE Coss =2 BESSae)SSR a 4a Ae<br>|PEERS| | APTEEETT RRTTREESEeT EESTT eT SERREeT EER ES LUTTEELLETT TAT Pe<br>10 [1]<br>LEE aw A A A A<br>10 [1] ET ANV EEEEEE a ESSER CR 8<br>BEREREEEEEEEEEEIH} Crss _ FRRRSSSS ECOFEEEEE EEEEEE CFE EE EEE<br>PPP PELLEL ELLLEAFLET<br>10 [0] FCCCPCCECCEECE 10 [0] TTTI ALLELE<br>0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>GS(th)<br>V<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS BSC0803LS** **==> picture [530 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>20 V<br>50 V<br>ee ee ee ee 80 V e e<br>8<br>Saal tiated P CEaeee<br>iie med: iin Wb enisstttiiseitttieytt<br>10 [1] ee NX NY ™~\ al PEECECEEEBEEReeeeeeeee Yaer<br>SEES ECEEEEEEEE<br>6<br>25 °C COC Ve<br>SSS EEE EPC<br>100 °C<br>qe FON ONS ts Oe<br>= Feo Ee<br>125 °C<br>4<br>10 [0] TTI | SINTPNT FLFECEET C Toer<br>Eee ect 2 S000) S000 eeee<br>SRS | Eee<br>a a ll PZZCCCCP ECE<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0.0 2.5 5.0 7.5 10.0 12.5 15.0<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>I AV V GS<br>**----- End of picture text -----**<br> ## **Diagram Gate charge waveforms** **==> picture [259 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 108 Pt ttt tT tt et ey<br>106 PT TT TT TT TT<br>ERR<br>104 PE TT TT ET PA<br>PTT TET P T AT<br>tet 102 tt tA ett<br>= TT] TT<br>100 PTT PTALTTAL<br>PTTPALITTT<br>98 PT iAT TT TTT<br>TATE<br>96 A} | tt tt et te<br>Pt} ttt tt tt ey<br>94<br>CCPETEeeere<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS BSC0803LS** Final Data Sheet 10 **OptiMOS BSC0803LS** Final Data Sheet 11 **OptiMOS BSC0803LS** ## BSC0803LS |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2016-09-30|Release of final version| |2.1|2019-05-20|Update Rg, trr, Qrr, Diagrams 5, 8 and 9| ## **Trademarks** ## **erratum@infineon.com** ## **Information** ## **www.infineon.com** ). ## **Warnings** Final Data Sheet 12
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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