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BSC0802LSATMA1
Power MOSFET, N Channel, 100 V, 100 A, 3400 µohm, PG-TDSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 156W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: PG-TDSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 100A
- Drain Source On State Resistance: 3400µohm
- Gate Source Threshold Voltage Max: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 1.45 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
**BSC0802LS** ## **MOSFET** ## **OptiMOS** ## **Features** **==> picture [138 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> SuperSO8<br>8 5<br>7 6<br>6 5 7 8<br>@<br>5S, "ing,<br>Pro :<br>1 4<br>3<br>2 3 ; 2 1<br>4<br>**----- End of picture text -----**<br> |**Parameter**<br>~~Table1~~<br>~~KeyPerformance~~|**Value**<br>~~PerformanceParameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS<br>~~Table 1~~<br>~~Key Performance~~|100<br>~~Performance Parameters~~|V<br>~~Parameters~~| |_R_DS(on),max|3.4|mΩ| |_I_D|100|A| |_Q_oss|91|nC| |_Q_G(0V..4.5V)|37|nC| **==> picture [108 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> S 1 LI a 8 D<br>S 2 7 D<br>S 3 il (=) [ 6 D<br>G 4 af : 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode~~<br>~~**|**~~|**Package**<br>~~**|**~~|**Marking**|__Related Links| |---|---|---|---| |BSC0802LS<br>~~Type/OrderingCode~~<br>~~**|**~~|PG-TDSON-8<br>~~**|**~~|0802LS|-| Final Data Sheet 1 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0802LS** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.�2.2,��2019-05-13 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0802LS** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|100<br>99<br>20|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,<br>_R_THJA=50°C/W1)| |Pulsed drain current2)|_I_D,pulse|-|-|400|A|_T_A=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|301|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-<br>-|-<br>-|156<br>2.5|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=50°C/W2)| |Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category; DIN IEC 68-1:<br>55/150/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance,junction - case|_R_thJC|-|0.5|0.8|°C/W|-| |Device on PCB,<br>6 cm² cooling area1)|_R_thJA|-|-|50|°C/W|-| > 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.�2.2,��2019-05-13 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0802LS** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|1.1|1.7|2.3|V|_V_DS=_V_GS,_I_D=115µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|2.8<br>3.5|3.4<br>4.6|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=4.5V,_I_D=25A| |Gate resistance1)|_R_G|-|1.5|2.3|Ω|-| |Transconductance|_g_fs|60|120|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|5000|6500|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Output capacitance1)|_C_oss|-|770|1000|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|34|60|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|9.6|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Rise time|_t_r|-|10|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Turn-off delay time|_t_d(off)|-|40|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Fall time|_t_f|-|16.0|-|ns|_V_DD=50V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|14|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to4.5V| |Gate charge at threshold|_Q_g(th)|-|8|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to4.5V| |Gate to drain charge1)|_Q_gd|-|13|19|nC|_V_DD=50V,_I_D=50A,_V_GS=0to4.5V| |Switchingcharge|_Q_sw|-|18|-|nC|_V_DD=50V,_I_D=50A,_V_GS=0to4.5V| |Gate charge total1)|_Q_g|-|37|46|nC|_V_DD=50V,_I_D=50A,_V_GS=0to4.5V| |Gate plateau voltage|_V_plateau|-|2.9|-|V|_V_DD=50V,_I_D=50A,_V_GS=0to4.5V| |Gate charge total, sync. FET|_Q_g(sync)|-|61|-|nC|_V_DS=0.1V,_V_GS=0to10V| |Output charge1)|_Q_oss|-|91|121|nC|_V_DS=50V,_V_GS=0V| > 1) Defined by design. Not subject to production test. > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.2,��2019-05-13 4 **OptiMOS[TM�] 5�Power-Transistor,�100�V BSC0802LS** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|100|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|400|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=50A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|40|80|ns|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge1)|_Q_rr|-|42|84|nC|_V_R=50V,_I_F=50A,d_i_F/d_t_=100A/µs| 1) Defined by design. Not subject to production test. Final Data Sheet Rev.�2.2,��2019-05-13 5 **OptiMOS BSC0802LS** **==> picture [539 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 160 Ly ooo TE EE EE ET 120 EEE -E}-EFF]<br>140 COPRECEEEEEEEE<br>BERRNEe rE | 100 GEERRRRRR RR<br>Lit eee en penn enn, |_|} | —<br>120<br>ATT TT TT a<br>80<br>HEHE RAR-EEEEH-H | EERE EERE ERE<br>100<br>HN EE) EEE<br>esEEE 80 HAH es 60 RFEAS<br> NEE fe ECE<br>60 : ee<br>CECE | GEER<br>40<br>Pi tT TTT ETT EN ETT ppt ee ee eee ee<br>40 SEREEEEEEEENGEEE rh<br>SESE eS<br> ES EEBNEEE SERRE<br>20<br>HAE EEE EEEEE AE<br>20<br>Pi TTT TET TET IN TC GREESOE<br>0 Pit ETT EET ETT EEN | 0 i<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>T C [°C] T C [°C]<br>a P tot=f( T C) I D=f( T C V GS ≥<br>G<br>10 [3] 10 [1]<br>single pulse<br>0.01<br>0.02<br>IA T SSTEI 1 µs NT-t i 0.05 PH<br>10 [2] C SE STTIN 10 µs Sy Cl 0.10.2 na oo<br>0.5<br>10 [0]<br>100 µs<br>10 [1] Aen 10 ms A NOC TTHTT EHH SEECHHIS PE S<br>qe eee 1 ms tt a<br>DC<br>cS ee |<br>10 [0]<br>10 [-1]<br>eee ceed eee 0 eae | a<br>10 [-1] a a ||| PAA<br>ee ee fee ss see et), eee eel PAA THIN TTT TEE PTT<br>Se soos i fe a CN A|<br>Sga TO<br>10 [-2] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>P tot I D<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS BSC0802LS** **==> picture [539 x 640] intentionally omitted <==** **----- Start of picture text -----**<br> 400 10<br>roo a OO<br>4.5 V<br>5 V<br>7 V<br>LLL Hp Aroae | Pe 0<br>350<br>TLL TAAL LEE ELEEEL EE SO Pj ffffff<br> / / 8 Se es<br>UAL 10 V 0<br>300<br>PEL OAVHt LEEELLE ELLEE E EEE ieee 3 V eee e ee<br>// oe 3.2 V<br>250<br>4 V 6 3.5 V<br>EE) | A<br>ce 200 0|WCA feCE re ZAaeeeee ee 4 V<br>4.5 V<br>4<br>150 AL EE ee ee ee<br>3.5 V 5 V<br>7 V<br>100 A —=$$=$=$=—— 10 V<br>WE 3.2 V 2 =<br>50 Y (AGREEeee 3 V —a esee<br>Yo aeeeeeeee a a<br>2.8 V<br>Pol eee<br>MOLLE LEE TLL LL aa<br>0 0<br>0 1 2 3 4 5 0 25 50 75 100 125 150 175 200<br>V DS M I D [Al<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>|) 25°C; parameters E25 Ci parameters<br>[Diagram 7: Typ. transfer characteristics = [Diagram 8: Typ.drain-source onresistance |<br>400 ET ETT TTT 10 ECE CECE<br>PLL EET LEELA SSRRGGe8 Cee<br>350 POPP Ty. SSGGGG08 Cee<br>25 °C 8<br>300 PyPTTLT EP EET TLLLEELAELT ELE ELL [i] || SSSRGG08POCOee eeNECPee eee<br>I, FCCCCEECPREEEEEEEEE<br>250 150 °C<br>6<br>P TL EER | EEEEEECEEeee<br>150 °C<br>< ETL ELLE LLL ELL ELLA SS000005 SESGb- “See eeeeeee<br>x 200 ILL)LEE | esje 60 —--—<br>EEE EAT ECE OCEC ACCC ECC<br>4<br>150 PTET FCEEE CECE EEE<br>100 PTETSeyETE EEE Ace} FCPSFCCCHEE 25 °C So<br>PTT ET TL TELE ELARL ELLE 2 SeePL<br>50 PTTL ELT LEELAY ELLE EE HEEFCCCCEEE4<br>PLL LEEL LLL ELL AZLLELLE EE FLTFCCCCEEE TTT TT TTPEEE eee ee<br>a Pree<br>0 PITT [ETT] EE EE 0 EEC CCE ECCEEE eeeE CCEee<br>0 1 2 3 4 5 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>[Ls parameter: Ti), OA parameter:<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS BSC0802LS** **==> picture [528 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0 HHH HE 2.4 LETTFEEECEECECC TTL EEL TELE CECErEeee<br>CCCPVA 2.0 FCEPRECCECCECECCEELECLCI<br>PET PT IS PNT TT ETE ET Et tT TE ET<br>1.6 EEE ELIAS<br>~ AA N<br>PACE 1.6 PEP NAEP<br>ite) ie ~~ NN<br>SCO 1.2 er SEE<br>eee COC CONSCE SELL<br>ne] eee EEREHSS PENSE<br>8 COO eelA oo2 1.2 eeeNX IN =<br>s ENA<br>1150 µA<br>E ~COCCCOO eee CCEEEEEEEEEE SS<br>3° 0.8 PT LT EEE LTT TTT TTT TTT TTT tN<br>Q LU ae N<br>ES tetSe FEEL 0.8 LT tT TTT eye yt yyy yy 115 µA<br>S TT TE PCEREECECEREELELELLEL<br>2 ULI TTT TTT TTT TTT TT TT EECEEC EEEEEC<br>COPCCECCEPC EEE FCCC CECE<br>0.4 PT TT EEL PELE EELL_ ELLE FLEET TELE TELE EET<br>rT TELLTALE TT 0.4 FEET TELE EET TELE TPEtTL ty<br>FCCECEECECE FE p fqee<br>FECEECEECCEECEELEEEE PEE EEE EEE<br>FECEECEECEEECEELEEEEL EC CEECCCCE<br>0.0 0.0<br>-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br> **==> picture [530 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [4] 10 [3]<br>25 °C<br>FEEEERE EEE ERE EEEEEEEEEEH f#—EERE<br>25 °C, max<br>REEEEE EEE REE REESE Ciss 150 °C SsUUSER EEE ERDEEEREE EERE E OESEC<br>150 °C, max<br>Ne \ Ha<br>HERE TT T<br>ELLE qEEE a e4 1<br>10 [3] 10 [2]<br>HEREREEDDCHUEREEEGEEEEE REE E EERE EER Ae<br>Pee ee EE | ee<br>ac BNERCCL EEREECL LL Coss _ SEReee eeeey eeeAe<br>& BRN" LITT TIT T TET TT tat TT Pe eT<br>Re eeEenEEE PELLELE LLL ALA LE<br>LEN EEE EEE ELLE eT<br>10 [2] 10 [1]<br>rrTBERR| tet| [| |eEr_RRR| |tTTTRNGETNINE REETh ThEEEE TEEhrEEEEEEEEEhE rT rTETErT TT TT FEEEREEEEEERReeSER eeER EEREeeReeeee EEEEEE EEE<br>POCEECCEELEE SREa Crss aEERE CCECOL ECE<br>!<br>LEEELLEELEELL ELE EEL TELLER<br>10 [1] 10 [0]<br>0 20 40 60 80 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS BSC0802LS** **==> picture [540 x 636] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>eee ee me<br>20 V<br>50 V<br>80 V<br>SHH | e ea<br>8<br>CONTI N SE L E EEE EEE AA<br>Nel l 25 °C E E<br>CTE NUTTIN LAS SSSS0EEe? aeeeeeee<br>X 100 °C St a ) #<br>6<br>125 °C a<br>\ OF<br>10 [1]<br>SSS EHS | ECE<br>4<br>i pit tt t Yat t ft tt tT<br>a pit} | tAgt | t Pt | ttt<br>a ee t<br>ETE NT 2<br>PL [TE] Y et tty tt<br>2<br>THI ELE ELLIS AGE eee<br>ey 2<br>UTI iA a<br>10 [0] 0<br>10 [0] 10 [1] ELIMI 10 [2] LUM 10 [3] | 0 ZAERERERERE 10 20 30 40 50 REESE 60 70 80<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j,start V GS=f( Q gate I D T j V DD<br>|} =25 parameters Ts 50 Appulsed, =25°C; parameter:<br>[Diagram 15: Drain-source breakdownvoltageT Diagram Gate charge waveforms C<br>108 Pt Ee tT tT tT et ey<br>106 Pt te Tt tet ed Ves<br>PTET tT tT tT tt A a,<br>104 PL ET TT tT tA<br>PL ETT t T A<br>tet 102 tt tA ett<br>= Titties<br>100 PL ET JATete<br>PL i vA TET ty<br>98 PlLiAtt tet ty<br>7 /<br>96 Att} tt tt td /<br>Pt tet tT tT et ty Fe a Q sate<br>94 PLE TL TT Et ty Oy Os<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>ier V BR(DSS)=f( T j I D |<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS BSC0802LS** Final Data Sheet 10 **OptiMOS BSC0802LS** Final Data Sheet 11 **OptiMOS BSC0802LS** ## BSC0802LS |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2016-09-30|Release of final version| |2.1|2016-10-20|Update " Features "| |2.2|2019-05-13|Update Diagrams 5, 8 and 9| ## **Trademarks** ## **erratum@infineon.com** ## **Information** ## **www.infineon.com** ). ## **Warnings** Final Data Sheet 12
Updated at March 15, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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