BSC076N04NDATMA1

Dual MOSFET, N Channel, 40 V, 40 V, 20 A, 20 A, 0.0076 ohm

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Manufacturer: INFINEON
Product type: Dual MOSFETs
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS-T2 Series
Qualification: -
Transistor Case Style: TDSON
Drain Source Voltage Vds: 40V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 20A
Power Dissipation N Channel: 65W
Power Dissipation P Channel: 65W
Drain Source Voltage Vds N Channel: 40V
Drain Source Voltage Vds P Channel: 40V
Continuous Drain Current Id N Channel: 20A
Continuous Drain Current Id P Channel: 20A
Drain Source On State Resistance N Channel: 0.0076ohm
Drain Source On State Resistance P Channel: -

Delivery and price
Units per pack	5000
Price	0.455 €
Current stock	25+
Lead time	30 days

Datasheet

**BSC076N04ND** 

## **MOSFET** 

## **OptiMOS[TM]** 

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OptiMOS -T2 Power Transistor, 40 V PG-TDSON-8-4<br>8 1<br>Features 7 2<br>6 5 3 4<br>- Dual N-channel, normal level<br>- Fast switching MOSFETs<br>- Optimized technology for drives applications<br>- Superior thermal resistance 1 8<br>- 100% avalanche tested 2 7<br>3 6<br>- Pb-free plating; ROHS compliant 4 5<br>- Halogen-free according to IEC61249-2-21<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22<br>D1 D1 D2 D2<br>8 7 6 5<br>Parameter Value Unit<br>Table V DS 1 Key Performance Parameters 40 V ia, |<br>R DS(on),max 7.6 m Ω S1 G1 S2 G2<br>I D 20 A<br>—— : = :<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode~~<br>~~|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSC076N04ND<br>~~Type/OrderingCode~~<br>~~|~~|SSO8 dual(TDSON-8-4)<br>~~|~~<br>~~|~~|076N04ND|-<br>~~Related Links~~|



Final Data Sheet 

1 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC076N04ND** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.0,��2018-12-11 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC076N04ND** 

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**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified,�one�transistor�active 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-|-|20|A|_V_GS=10V,_T_C=25°C|
|Pulsed drain current1)|_ID,pulse_|-|-|80|A|_T_A=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|87|mJ|_I_D=10A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|65<br>2.3|W|_T_C=25°C<br>_T_A=25°C,_R_THJA=65°C/W3)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|2.3|°C/W|-|
|Device on PCB,<br>6 cm² cooling area3)|_R_thJA|-|-|60|°C/W|-|
|Device on PCB,<br>minimal footprint4)|_R_thJA|-|-|100|°C/W|-|



> 1) See Diagram 3 for more detailed information 

> 2) See Diagram 13 for more detailed information 

> 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 4) device mounted on a minimum pad (one layer, 70 µm thick) 

Final Data Sheet 

3 

Rev.�2.0,��2018-12-11 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC076N04ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.0|3.0|4.0|V|_V_DS=_V_GS,_I_D=30µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-|7.0|7.6|mΩ|_V_GS=10V,_I_D=17A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2270|2950|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|670|870|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|24|48|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|13|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Rise time|_t_r|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Turn-off delay time|_t_d(off)|-|22|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Fall time|_t_f|-|7|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|**Table6Gatechargecharacteristics2)**|||||||
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|12|16|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|4|7|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|28|38|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|5.2|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition 

Final Data Sheet 

Rev.�2.0,��2018-12-11 

4 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC076N04ND** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|20|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|80|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=17A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|35|-|ns|_V_R=15V,_I_F=9A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|35|-|nC|_V_R=15V,_I_F=9A,d_i_F/d_t_=100A/µs|



1) Defined by design. Not subject to production test. Final Data Sheet 

Rev.�2.0,��2018-12-11 

5 

**OptiMOS[TM] BSC076N04ND** 

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10 [2] 10 [1]<br>1 µs single pulse<br>10 µs 0.01<br>10 ms<br>tH et). NHI 100 µs ™ LT TTT ie 0.02 a<br>ae ee NH HTH \ 0.05 La<br>DC 0.1<br>YT T WN StH 0.2 MATT C LL<br>10 [1] 0.5<br>ZT ANN A ese e al<br>1 ms 10 [0]<br>=< 10 [0] LTee OT TTTTTT<br>| UII LINN INTL S Loerie<br>EEE CN TTT TTI TH<br>a at ae | LAT EIT ETT TET<br>FH o,<br>ETT AN, LETT 10 [-1] ARE |<br>| [TE] eee | II<br>A TET ASet<br>10 [-1] ————— == Se ee SESE a<br>0<br>aee<br>10 [-2] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS[TM] BSC076N04ND** 

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80 50<br>6.25 V<br>6.5 V<br>5 V<br>Ayr TTT TITEL IILLEL EEL ELELLLL 6 V<br>70 Ty Deer Pe<br>6 V 5.5 V<br>CACC 40 RReee<br>10 V<br>60<br>Hitecram tt) EAH<br>50 B Zane tt | iPe<br>30<br>| SPEEAeeeeeee<br>40<br>5.5 V<br>_— =<br>20<br>30 CLLereTT JA A<br>pe ee<br>20<br>6.5 V<br>| ARERR setter<br>| (MRR 5 V 10 er<br>10 10 V<br>Pee ==—eee<br>ett TE TE ET ee ee<br>0 ARERR 0 PrFErErrerererreyyy<br>0.0 2.0 4.0 6.0 8.0 0 10 20 30 40 50 60 70 80<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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80 24<br>PEELE  EEE Pett TTT<br>Se<br>70<br>20<br>| BRR eee<br>60<br>RRR Cee<br>16<br>50<br>| EECCA SSE<br>40 12 175 °C<br>LETT EEE TT TTP IN EEE<br>30<br>8 FEEEEEEEEE EEE EEE PSE<br>25 °C<br>20<br>4<br>10<br>PEAW q] | PS E EC STeee<br>175 °C<br>0 CHEE t hee Af 25 °C PTE 0 EECCEECCCCEEECCE e ECE E e e eeee<br>0 1 2 3 4 5 6 7 0 2 4 6 8 10<br>V GS V GS<br>[Vv] [Vv]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>PE parameters ft AS parameter:<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS[TM] BSC076N04ND** 

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1.8 4.0<br>PEETLLLLLLLEEEEEEEEEE<br>1.6 ELL) P 3.5 HRREEEEEEE HH<br>oa iPr<br>1.4<br>PUTTCECECAEEEEELUUIA7CH | 3.0 PECPRSRRRrrer<br>s a LLL PPE<br>1.2<br>2 TELE) |) 2.5  CoCo<br>& 1.0 TTT peatATT TTT — L ETTEEALTT INN<br>2.0<br>300 µA<br>BUILD) EEE WENT<br>0.8<br>abbad COCA AN<br>: 0NTANNA bearttaattteattant ab<br>1.5<br>30 µA<br>0.6<br>BTPATTTCETTTCETCCECETLLA | EEEPE E EELEotTEE<br>1.0<br>THT AT TTAALLL CCC<br>0.4<br>0.2 TATTTTEEETTT 0.5 PEL PEELETUELETE  EEE EEE EEEEEE EEEE EE E EEE<br>0.0 0.0<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>


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10 [4] 10 [2]<br>=================== [ 25 °C25 °C, max ne s olsSoSSoles Sea oe<br>| [| | {| [| [| J [ Ty TT fT tT yt Tt 7] || 175 °C PP ye ae ee<br>PF—— === Ciss fF i 175 °C, max f POO eeteeAae<br>10 [3] PPLE=== == EE SSSELL SS TTTTELLEReT<br>10 [1]<br>P+ 4 ee Coss BEE REE EERE ERE REE REE EERE<br>NEE EEE FREER<br>10 [2]<br>€ (NEE ttt fe) GE<br>=== —— PELL TLL LTEPEELEEEE<br>aREESEa a, ere EEE<br>COE 10 [0] LTTE TT aEE<br>10 [1] P] Tt yt Ey eEKLEE EERE EERE RRRRARE<br>Crss<br>=——— PL EY<br>POOF<br>——————— FREER EEE EEE EEE<br>Seana<br>10 [0] mmm Ramm mmm MMMM 10 [-1]  TTTUATEATANTACANTVUNTUTVNNNI<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS [V] V SD [V]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] BSC076N04ND** 

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10 [2] 10<br>ee PSSST<br>ee  ee 8 V PEPEa<br>a ee 20 V a<br>i ee 32 V<br>8<br>Sa eee aetRT iesnLETT s c ELTnsatsatontsnneyTTT TTT TT TTT TTT afeat<br>10 [1] SUE:Py a eeSNE a Snes SSeS ANU 0eeS ees ee,LETSESS TETTTTSSRSeTET TTT TETTET TTTSees,TT LETTE TTT p Ey wreAEEEET<br>RO OO 0 ee 6 tf<br>a eS LETT TT ET TTT TTT yr EE EET<br>= PT oT TT AE TTT RET 25 °C = Be<br><x NY ~ > LF/ Ae<br>SEA T EON a es c e<br>SI 100 °C 4 CA<br>10 [0] NE [CUMIN] \ hay LTTSSGR000)TTT TT 4G TEE0eeeeeTTT ET<br>a a a eee ff<br>a 150 °C 2 LETT TAU TT TTT TTT TT TTT TT TTT Yt TT<br>Sen<br>a nat h r gaTTe  PFoefoost e atosttosttce s tont<br>10 [-1] LEHI EEE TEI) | 0 VETTEPARESRY ASER0SREEE00 00000000TTT itt titty r ttt 0000080yet tf<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20 25 30<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j,start V GS=f( Q gate ), I D =20A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


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Diagram Gate charge waveforms<br>**----- End of picture text -----**<br>


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44<br>CECE eee EEL LL<br>A<br>COOL<br>A<br>POOPeee<br>43<br>COOP ee eee<br>POOP ev<br>COEeee<br>a<br>42 COOECEC eee<br>a<br>COOECEC Cee<br>2<br>5 COOP Eee<br>a 41 ee<br>COOP eee<br>COOECEC CCA Cee<br>a<br>SSeS eee, eee<br>See a<br>40<br>SSS eee4<br>See4<br>SSS<br>COCECEPZ Cee<br>COCA<br>39 COCOA eee<br>ERCBen, 4GeeeEEE<br>Sep400s<br>38 COP ECEC Cee eee<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC076N04ND** 

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## **5�����Package�Outlines** 

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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 0.90 1.10<br>A1 0.15 0.35<br>b 0.34 0.54<br>b1 0.02 0.22<br>D 4.95 5.35<br>D1 4.20 4.40<br>D2 0.50 0.70<br>E 5.95 6.35<br>E1 5.70 6.10<br>E2 4.075 4.275<br>E3 4.035 4.235<br>E4 0.15 0.35<br>e 1.27<br>L 0.45 0.65<br>M 0.45 0.65<br>Θ 8.5 ° 11.5 °<br>aaa 0.05<br>ddd 0.10<br>**----- End of picture text -----**<br>


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DOCUMENT NO.<br>Z8B00189767<br>REVISION<br>01<br>SCALE 5:1<br>0 1 2 3 4mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>31.07.2018<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�SSO8�dual�(TDSON-8-4),�dimensions�in�mm** 

Final Data Sheet 

10 

Rev.�2.0,��2018-12-11 

**OptiMOS[TM] BSC076N04ND** 

## BSC076N04ND 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-12-11|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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