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BSC074N15NS5ATMA1
Power MOSFET, N Channel, 150 V, 114 A, 7400 µohm, TSON, Surface Mount
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- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 214W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TSON
- Drain Source Voltage Vds: 150V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 114A
- Drain Source On State Resistance: 7400µohm
- Gate Source Threshold Voltage Max: 3.8V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.92 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**BSC074N15NS5** ## **MOSFET** ## **OptiMOS** ## **Features** ¢ N-channel, normal level _R_ DS(on) product _R_ DS(on) charge (Q rr) |**Parameter**<br>~~Table~~ 1<br>~~Key Performance~~|**Value**<br>~~Performance Parameters~~|**Unit**<br>~~Parameters~~| |---|---|---| |_V_DS|150|V| |_R_DS(on),max|7.4|mΩ| |_I_D|114|A| |_Q_oss|116|nC| |_Q_rr|23|nC| **==> picture [158 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> TSON-8-3<br>8<br>7 5<br>6 6<br>5 7 8<br>Aaes4<br>Pin 1<br>2 4<br>3 3<br>4 2<br>1<br>S 1 4 4 8 D<br>S 2 7 D<br>S 3 | ( =) r T 6 D<br>G 4 5 D<br>**----- End of picture text -----**<br> |~~Type/OrderingCode|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~| |---|---|---|---| |BSC074N15NS5<br>~~Type/OrderingCode |~~|TSON-8-3<br>~~|~~<br>~~|~~|074N15N|-<br>~~Related Links~~| Final Data Sheet 1 **OptiMOS[TM�] 5�Power-Transistor,�150�V BSC074N15NS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.�2.0,��2019-09-18 **OptiMOS[TM�] 5�Power-Transistor,�150�V BSC074N15NS5** **==> picture [120 x 53] intentionally omitted <==** **1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified ## **Table�2�����Maximum�ratings** |**Table2Maximumratings**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Continuous drain current|_I_D|-<br>-|-<br>-|114<br>80|A|_V_GS=10V,_T_C=25°C1)<br>_V_GS=10V,_T_C=100°C| |Pulsed drain current2)|_I_D,pulse|-|-|456|A|_T_A=25°C| |Avalanche energy, single pulse3)|_E_AS|-|-|210|mJ|_I_D=50A,_R_GS=25Ω| |Gate source voltage|_V_GS|-20|-|20|V|-| |Power dissipation|_P_tot|-|-|214|W|_T_C=25°C| |Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56| ## **2�����Thermal�characteristics** ## **Table�3�����Thermal�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.4|0.7|°C/W|-| |Thermal resistance, junction - case,<br>top|_R_thJC|-|-|20|°C/W|-| |Device on PCB,<br>6 cm² cooling area4)|_R_thJA|-|-|50|°C/W|-| > 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. > 2) See Diagram 3 for more detailed information > 3) See Diagram 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Final Data Sheet 3 Rev.�2.0,��2019-09-18 **OptiMOS[TM�] 5�Power-Transistor,�150�V BSC074N15NS5** **==> picture [120 x 53] intentionally omitted <==** ## **3�����Electrical�characteristics** at� _T_ j=25�°C,�unless�otherwise�specified ## **Table�4�����Static�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Drain-source breakdown voltage|_V_(BR)DSS|150|-|-|V|_V_GS=0V,_I_D=1mA| |Gate threshold voltage|_V_GS(th)|3.0|3.8|4.6|V|_V_DS=_V_GS,_I_D=136µA| |Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=120V,_V_GS=0V,_T_j=25°C<br>_V_DS=120V,_V_GS=0V,_T_j=125°C| |Gate-source leakage current|_I_GSS|-|1|100|nA|_V_GS=20V,_V_DS=0V| |Drain-source on-state resistance|_R_DS(on)|-<br>-|6.0<br>6.6|7.4<br>8.1|mΩ|_V_GS=10V,_I_D=50A<br>_V_GS=8V,_I_D=25A| |Gate resistance1)|_R_G|-|1.0|1.5|Ω|-| |Transconductance|_g_fs|41|81|-|S||_V_DS|≥2|_I_D|_R_DS(on)max,_I_D=50A| ## **Table�5�����Dynamic�characteristics** |**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Input capacitance1)|_C_iss|-|3100|4000|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz| |Output capacitance1)|_C_oss|-|770|1000|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz| |Reverse transfer capacitance1)|Crss|-|19|33|pF|_V_GS=0V,_V_DS=75V,_f_=1MHz| |Turn-on delay time|_t_d(on)|-|9|-|ns|_V_DD=75V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Rise time|_t_r|-|4|-|ns|_V_DD=75V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Turn-off delay time|_t_d(off)|-|15|-|ns|_V_DD=75V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| |Fall time|_t_f|-|4|-|ns|_V_DD=75V,_V_GS=10V,_I_D=50A,<br>_R_G,ext=3Ω| ## **Table�6�����Gate�charge�characteristics[2)]** |**Table6Gatechargecharacte**|**ristics2)**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Gate to source charge|_Q_gs|-|18|-|nC|_V_DD=75V,_I_D=50A,_V_GS=0to10V| |Gate charge at threshold|_Q_g(th)|-|12|-|nC|_V_DD=75V,_I_D=50A,_V_GS=0to10V| |Gate to drain charge1)|_Q_gd|-|9|13|nC|_V_DD=75V,_I_D=50A,_V_GS=0to10V| |Switchingcharge|_Q_sw|-|14|-|nC|_V_DD=75V,_I_D=50A,_V_GS=0to10V| |Gate charge total1)|_Q_g|-|41|52|nC|_V_DD=75V,_I_D=50A,_V_GS=0to10V| |Gate plateau voltage|_V_plateau|-|5.7|-|V|_V_DD=75V,_I_D=50A,_V_GS=0to10V| |Output charge1)|_Q_oss|-|116|154|nC|_V_DS=75V,_V_GS=0V| > 1) Defined by design. Not subject to production test. > 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet Rev.�2.0,��2019-09-18 4 **OptiMOS[TM�] 5�Power-Transistor,�150�V BSC074N15NS5** **==> picture [120 x 53] intentionally omitted <==** ## **Table�7�����Reverse�diode** |**Table7Reversediode**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**| |||**Min.**|**Typ.**|**Max.**||| |Diode continuous forward current|_I_S|-|-|179|A|_T_C=25°C| |Diode pulse current|_I_S,pulse|-|-|456|A|_T_C=25°C| |Diode forward voltage|_V_SD|-|0.85|1.2|V|_V_GS=0V,_I_F=50A,_T_j=25°C| |Reverse recoverytime1)|_t_rr|-|29|58|ns|_V_R=75V,_I_F=50A,d_i_F/d_t_=100A/µs| |Reverse recoverycharge1)|_Q_rr|-|23|46|nC|_V_R=75V,_I_F=50A,d_i_F/d_t_=100A/µs| 1) Defined by design. Not subject to production test. Final Data Sheet Rev.�2.0,��2019-09-18 5 **OptiMOS BSC074N15NS5** **==> picture [539 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 240 a a ee ee es es 120 Rs Gs<br>200 100<br>S N S<br>160 80<br>SS ———<br>120 60<br>= ee A <= ——<br>80 40<br>40 20<br>0 ae ee ee ee ee 0<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>0 P tot=f( T C) I D=f( T C V GS ≥<br>P tot I D<br>**----- End of picture text -----**<br> **==> picture [527 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [3] =] SS 2 SS SSS = Sey 10 [0] | na single pulse tf st iL sd iL eT<br>0.01<br>a 1 µs oth | 0.02 CC T<br>0.05<br>GN J ONE 10 µs 1 TLS r<br>10 [2] LINN I 0.1 (oa A CT<br>0.2<br>PTTet eet i 0.5 Waser| UATE TUT<br> UINE ENON 100 µs Pp ee ee i) Va<br>EES NSE EEE Toma r ” NEEL ll<br>10 [1]<br>Ssassrsere le 10 [-1] 7 |||g |||<br>‘<br>1 ms<br>10 [0] TIE NINE\ Ny ETT Sea aeA<br>DC<br>a ee ee Y | TF Ter /<br>EEN 10 ms AL LLIN EM LETTE<br>10 [-1]<br>a INN 7AA<br>ll<br>10 [-2] 10 [-2]<br>10 [0] 10 [1] 10 [2] 10 [3] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br> Final Data Sheet 6 **OptiMOS BSC074N15NS5** **==> picture [531 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> 500 20.0<br>COE 10 V 6.5 V<br>PCE<br>a 6 V<br>CCEACOCA 17.5 |<br>COO 7 V<br>400<br>8 V 15.0<br>POOP |<br>CCEAPCEEEET EEA ee |<br>POPE Ae<br>12.5<br>300<br>eS$ COCOSSSPOACee0008/) dese |fe 10.0 eee;/y JLy, Se )y,<br>200 COOPOCA 7 V 7.5 TLae eeseee>—sineane - 8 V<br>10 V<br>S0007/740nee000000055558 Secu Snsceeeesee<br>6.5 V 5.0<br>SEE? //4URRRRESSEEES=ny Sere<br>100 S00)//?— 2a<br>Ce<br>6 V 2.5<br>Er<br>oy /2oen<br>Y A000<br>Ae<br>0 0.0<br>0 1 2 3 4 5 0 40 80 120 160 200 240<br>V DS I D<br>[Vv] [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>| 25 °Ciparameter: 25°C parameters<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [529 x 290] intentionally omitted <==** **----- Start of picture text -----**<br> 200 20.0<br>175 AEE 17.5 EEEM TELE<br>EEE| EATEN\ UT<br>150 EET EET TET 15.0 EET EETtr 175 °C<br>125 12.5<br>< 100 ELE EEELLETLELTA E 10.0 LLL<br>75 /| 7.5 Ne<br>ATTA) FLEET PUTT<br>AVA) LETT re<br>50 5.0<br>25 °C<br>175 °C<br>25 INICIO 25 °C AAMT) | 2.5 CCCCEEUUICEECEPUUT<br>LUCA | ATTA<br>0 0.0<br>0 1 2 3 4 5 6 7 0 2 4 6 8 10<br>V GS Ww V GS Ww<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>Po parameters Ts 5A parameters<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br> Final Data Sheet 7 **OptiMOS BSC074N15NS5** **==> picture [530 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4 5<br>EEE eee | EEEEEEEEEEEEE-EE-EE-EEEEEEE<br>PELE ET PETE ET ETT VW LITT TTT TTT ET TT TT<br>2.0 PTET ET ETT ETT ET ET TTT TE ETH LT[treet—~—2a tT TT TE TT<br>PEE TET TTT ETT ET ET TT TE EAE 4 LTT | PSA eAee EE EE TT<br>PTET ET ETT ETE ET ET ET TET Se NAeeee<br>~ TPELLEEEEELLEE LZ LIT TTT TTT TT ANE PASE ETT<br>3oO / PELEEELLETTT TSARz =<br>i 1.6 PLE TET ETT ETT ET ET TALE EEE SS ~<br>a PLETE TTT TTT TET TE 7YEE EE PEELE ETT EE TTT TTT ANUENCE<P<br>3<br>se = ~OCCCAPeeeee SSSE 1360 µA<br>mo}8 LOO 4 eee fe OH \<br>1.2<br>BY Poeeereeeee Ae fe EK<br>s LS BRN<br>=e£ioe 0.8 COCSREPLeeteeeRevy,ae eRe eee eee 2 ECERECEEEEEEEEEECEECECECEECE 136 µA ee<br>gs FEET [LLP] TTT EPET ET EE EECCAECACC eee<br>PETE ET ETT ETT ET ET ETE EEE 1 eee<br>0.4 FEET T TTTTTETTET T TE ET EE ET EE EE P TETEE E LEE<br>PET TTT TTT TEE TT EEE EE EE LETT TTT TTT TTT TT TTTELT TET TT<br>PTET ET ETT ETT ET ET ETE EE PEE TET TTT TTT ET TT TE<br>0.0 PEE TETPLETE TEEPEETT ETT TET PETET ET etyETE EeET eee EE 0 PEELTT TET TPT TTT TTT TTT TTTTit yrET TTryTEETTT TT<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j J I D =60R=10V V GS V GS(th=f( T j V GS= V DS I D<br>Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode<br>10 [4] 10 [3]<br>EEEE EERE EEE EEE EE EEE Ere Q 25 °C E<br>pt ft ty yt | ERReee<br>rT TTT TT TTT TTT ee et eT | 25 °C, max ERE<br>rT TT TT TET tT tT eet yey ee TT TT (| 175 °C ERRREPU|<br>175 °C, max<br>Ciss<br>SOIT TTT TTT I fp ge<br>BCU EERE DRO RRRRUEORRRRUEDED TO TAL<br>10 [3] FEEPPPSSALLEE~~ ELLE 10 [2] T E LE/\<br>EEE ASS EEE<br>eee. eee A OO YA<br>Hi= Bee ~~| TI Coss = eeeey; CYCeee eee<br>COE _ EECECCCCCeC<br>& MEE EEE x See eee<br>ee EEntE PETTITT THT TTT<br>NNEEEEEEEEEEEELL TEEPE CALLA<br>10 [2] 10 [1]<br>REE REE EEE REESE EEEEERE<br>eee A A OP OB Bl OO<br>(TTTECEPt yt tTTTTITNIiTTTTTtTttND ttt ttt tt ttt tt ee[TT [TTTTTTTPFTT] Tit ttf itt Tt ttteeett tT<br>PET ECTT TTTCPN PINE EEE EEE EEE BESSBERR SS SRR ee seeeee<br>HET NATT ee es Re<br>Crss<br>10 [1] EEEEEEEEEEERRLP poteTTR UT| | CCT 10 [0] TEEPE<br>0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>IV] IV]<br>C =f( V DS y__=0V; V GS f =1 MHz I F=f( V SD T j<br>GS(th)<br>V<br>R<br>C I F<br>**----- End of picture text -----**<br> Final Data Sheet 8 **OptiMOS BSC074N15NS5** **==> picture [526 x 283] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2] 10<br>—— a oe oe Feeee<br>SHES HES 30 V POC<br>a 75 V 7%<br>KT TE TTTx TINAN ETT TTT i 120 V HTT ETE TT TT tty [tt<br>NS i NS | 8 Fae<br>POINTE INI LTT T ETT TTT TTT tT TAA ET TT<br>TW, FyNUTR N\ ine EET SEEEEEECE EEE Ao<br>10 [1]<br>25 °C<br>eee,——S eeeee NU 6 FREE EEE f 4PLLEELELLELI<br>SS LTT YT TTT<br>= a Ne S BE Se e<br>x |FHT| || wee 100 °C eeEERE AG eeE<br>4<br>10 [0] a ee SilNN LTT TTTTY IATETET T T PE ET TTE TET<br>150 °C<br>a<br>YTrT TTTTTT TTTE TTTTTT 2 LILIALTIATTTT ITTTTETTeeeTTTetyTTTet tt eTyt yy et el<br>ee OAC<br>LYLE EEE EEE TEE EEE EEE<br>ADRESSE<br>10 [-1] 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40 50<br>t AV Q gate<br>[us] [nC]<br>I AS=f( t AV ); R GS =25 Ω ; parameter: T j,start V GS=f( Q gate ), I D =50A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br> **==> picture [148 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Diagram Gate charge waveforms<br>**----- End of picture text -----**<br> **==> picture [259 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>9<br>ey,<br>7<br>See<br>158 eeee aeee<br>ee<br>a eee<br>a 2YA<br>156 aYA<br>A<br>2<br>154 a,<br>Se eee<br>See ee<br>= See 4<br>> Se ee<br>152 aA<br>2<br>a<br>YA<br>150 a2<br>2aSee 6<br>148 Se,See4 See<br>a S e Ae<br>CEeCCCZEEE E E eeeE<br>146 2<br>CeOZACEaCEE<br>ey,<br>a<br>144<br>CECECEE<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j =m I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br> Final Data Sheet 9 **OptiMOS[TM�] 5�Power-Transistor,�150�V BSC074N15NS5** **==> picture [120 x 53] intentionally omitted <==** ## **5�����Package�Outlines** **==> picture [375 x 280] intentionally omitted <==** **==> picture [168 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A - 1.10<br>b 0.34 0.54<br>b1 - 0.05<br>c 0.20<br>D 4.90 5.10<br>D1 4.25 4.45<br>E 5.90 6.10<br>E1 4.00 4.20<br>E2 3.14 3.34<br>E3 0.20 0.40<br>e 1.27<br>K2 (0.37)<br>L 0.60 0.80<br>L1 0.43 0.63<br>L2 (0.25)<br>**----- End of picture text -----**<br> **==> picture [88 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> DOCUMENT NO.<br>Z8B00187559<br>REVISION<br>01<br>SCALE 10:1<br>0 1 2mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>14.12.2017<br>**----- End of picture text -----**<br> **Figure�1�����Outline�TSON-8-3,�dimensions�in�mm/inches** Final Data Sheet 10 Rev.�2.0,��2019-09-18 **OptiMOS BSC074N15NS5** ## BSC074N15NS5 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects (major changes since last revision)| |2.0|2019-09-18|Release of final version| ## **Trademarks** ## **erratum@infineon.com** ## **Information** ## **www.infineon.com** ). ## **Warnings** Final Data Sheet 11
Updated at April 29, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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