BSC072N04LDATMA1

Dual MOSFET, N Channel, 40 V, 40 V, 20 A, 20 A, 6500 µohm

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Manufacturer: INFINEON
Product type: Dual MOSFETs
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: OptiMOS-T2 Series
Qualification: -
Transistor Case Style: TDSON
Operating Temperature Max: 175°C
Power Dissipation N Channel: 65W
Power Dissipation P Channel: 65W
Drain Source Voltage Vds N Channel: 40V
Drain Source Voltage Vds P Channel: 40V
Continuous Drain Current Id N Channel: 20A
Continuous Drain Current Id P Channel: 20A
Drain Source On State Resistance N Channel: 6500µohm
Drain Source On State Resistance P Channel: 6500µohm

Delivery and price
Units per pack	15000
Price	0.364 €
Current stock	10+
Lead time	30 days

Datasheet

**BSC072N04LD** 

## **MOSFET** 

## **OptiMOS[TM]** 

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**----- Start of picture text -----**<br>
OptiMOS -T2 Power Transistor, 40 V PG-TDSON-8-4<br>8 1<br>Features 7 2<br>6 5 3 4<br>- Dual N-channel, logic level<br>- Fast switching MOSFETs for SMPS<br>- Optimized technology for Synchronous Rectification<br>- Pb-free plating; ROHS compliant 1 8<br>- 100% Avalanche tested 2 7<br>3 6<br>- Halogen-free according to IEC61249-2-21 4 5<br>- Superior thermal resistance<br>Product Validation<br>Qualified for industrial applications according to the relevant tests of<br>JEDEC47/20/22<br>D1 D1 D2 D2<br>8 7 6 5<br>Parameter Value Unit<br>Table V DS 1 Key Performance Parameters 40 V ia, |<br>R DS(on),max 7.2 m Ω S1 G1 S2 G2<br>I D 20 A<br>———— : — -<br>**----- End of picture text -----**<br>


|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC072N04LD<br>~~Type/OrderingCode |~~|SSO8 dual(TDSON-8-4)<br>~~|~~|072N04LD<br>|-<br>|



Final Data Sheet 

1 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC072N04LD** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 

Final Data Sheet 

2 

Rev.�2.0,��2018-12-11 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC072N04LD** 

**==> picture [120 x 53] intentionally omitted <==**

## **1�����Maximum�ratings** 

at� _T_ A=25�°C,�unless�otherwise�specified,�one�transistor�active 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-|-|20|A|_V_GS=10V,_T_C=25°C|
|Pulsed drain current1)|_ID,pulse_|-|-|80|A|_T_A=25°C|
|Avalanche energy, single pulse2)|_E_AS|-|-|87|mJ|_I_D=10A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-16|-|16|V|-|
|Power dissipation|_P_tot|-|-|65|W|_T_C=25°C|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category; DIN IEC 68-1:<br>55/175/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|-|2.3|°C/W|-|
|Device on PCB,<br>6 cm² cooling area3)|_R_thJA|-|-|60|°C/W|-|
|Device on PCB,<br>minimal footprint4)|_R_thJA|-|-|100|°C/W|-|



## **3�����Electrical�characteristics** 

at� _T_ j=25�°C,�unless�otherwise�specified 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|40|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|1.7|2.2|V|_V_DS=_V_GS,_I_D=30µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=40V,_V_GS=0V,_T_j=25°C<br>_V_DS=40V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|6.5<br>8.0|7.2<br>9.2|mΩ|_V_GS=10V,_I_D=17A<br>_V_GS=4.5V,_I_D=10A|



1) See Diagram 3 for more detailed information 

2) See Diagram 13 for more detailed information 

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

4) device mounted on a minimum pad (one layer, 70 µm thick) 

Final Data Sheet 

3 

Rev.�2.0,��2018-12-11 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC072N04LD** 

**==> picture [120 x 53] intentionally omitted <==**

## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|3070|3990|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|680|880|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|36|72|pF|_V_GS=0V,_V_DS=20V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|9|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Rise time|_t_r|-|4|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Turn-off delay time|_t_d(off)|-|50|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|
|Fall time|_t_f|-|25|-|ns|_V_DD=20V,_V_GS=10V,_I_D=20A,<br>_R_G,ext=11Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|9|13|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate to drain charge|_Q_gd|-|4.1|8.2|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|39|52|nC|_V_DD=20V,_I_D=20A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|3.1|-|V|_V_DD=20V,_I_D=20A,_V_GS=0to10V|



## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|20|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|80|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.85|1.1|V|_V_GS=0V,_I_F=17A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|35|-|ns|_V_R=15V,_I_F=9A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|35|-|nC|_V_R=15V,_I_F=9A,d_i_F/d_t_=100A/µs|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2018-12-11 

4 

**OptiMOS[TM] BSC072N04LD** 

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**----- Start of picture text -----**<br>
70 [|a | | | | | | | 80 Ts] J | |... [1]<br>60 Ss a GC 70 - silicon limit Foof ofllUdTUT<br>60<br>se N e eee<br>50<br>No Pot | KE fT<br>Cd UN 50 Nee<br>40 rf, | \Y | | | - \<br>a J —||) | Kiet|<br>40<br>ee See Va<br>30<br>-——} —} —} —\- | 30 Foof Ut TN<br>rf, | | |N\!/[ | | _|<br>SN Pot | fl vt mEUK<br>20<br>-——} —} —} — + “| 20 package limit | ot | | |<br>10 Tr {| [| | | | Y\ |] 10 ee eee ee ee<br>fr | | | | | +N /_<br>es ee ee eee | ee<br>0 a 0 Pf | tf fF ff yt]<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T A [°C] T A [°C]<br>P tot=f( T A I D=f( T A<br>P tot I D<br>**----- End of picture text -----**<br>


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10 [2] 10 [1]<br>poa A Ne A NTN NGeee 1 µs an || single pulse0.01 aTUT TT TTTa eeTTT TT]<br>a ee, Ne 10 µs Banal || 0.02 TETT<br>10 ms 100 µs 0.05<br>0.1<br>TS EN HHT I 0.2 UE TT T<br>DC 0.5<br>ANN E ST S L<br>1 ms<br>10 [1] 10 [0]<br>AAWII ill<br>7 UIERNNIA LCEEE | eSe ree r<br>V NNe e ASS|<br>_ a A ke = a se<br>x otNANEE pe a<br>TAIT a eee!<br>LEAVE 0<br>10 [0] ETINNL NTI 10 [-1] PO<br>aeea a ee eee  eeeeee eeee CTLT TTTTTTTTTTT)TTT<br>AY | IE TTT)<br>10 [-1] 10 [-2]<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>


Final Data Sheet 

5 

**OptiMOS[TM] BSC072N04LD** 

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80 40<br>TONLE? 4 V ILE 3.5 V<br>70 4.5 V<br>10 V<br>ConOT pe AECL<br>CCE |<br>60 30<br>50 /ee<br>50 OT |ce<br>3.5 V<br>CUPee 4 V<br>3 V<br>zc 40 if 20<br>ICC ee e  ee le ]<br>30 WT<br>5 anne eeeeeeeeee /<br>20 10<br>4.5 V<br>3 V<br>10 V<br>10<br>| AERRERRBRDS== scene SEE<br>0 ({A02=VCE oe 0 LTTE EPP P EP<br>0.0 1.0 2.0 3.0 4.0 0 10 20 30 40 50 60 70 80<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>80 20.0<br>POE<br>70 17.5<br>Te |<br>P CECECECEOOCTE SUAPUUAAT\CHATOTOMUTAOTE<br>60 15.0<br>C OE UPATATATACUUHARUOTIANIVE<br>50 P 12.5 NL<br>175 °C<br>2 40 fooSEEERSSRRERESRRES /GRRRRE 10.0 TPTWEEEPa eeepprere<br>30 P OEOC 7.5 TTTNTT PITTI<br>25 °C<br>POO \<br>20 Oe 5.0 TPITTy) PreeceTTT<br>175 °C<br>POOA geet | LINIUINIUIL<br>10 2.5<br>25 °C<br>PCO eeoo<br>0 0.0<br>0 1 2 3 4 5 0 2 4 6 8 10<br>ine ? eaneaeh MTEATA<br>V GS [V] V GS [V]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j R DS(on)=f( V GS I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>] Ω<br>I D<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


Final Data Sheet 

6 

**OptiMOS[TM] BSC072N04LD** 

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**----- Start of picture text -----**<br>
1.75 2.00<br>1.75<br>1.50<br>UTA) ) = toe<br>aiC | TAN<br>1.50<br>EAA! TUTE<br>1.25<br>3 PTA<br>vA 1.25 SE<br>eT 1.00 NN<br>att AEE EEN NT<br>1.00 300 µA<br>TTA \<br>0.75<br>Pet 0.75 ATTEN<br>0.50<br>0.50 30 µA<br>0.25<br>0.25<br>0.00 0.00<br>-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th=f( T j V GS= V DS I D<br>GS(th)<br>V<br>R<br>**----- End of picture text -----**<br>


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10 [4] 10 [2]<br>SSS  SS f—E 25 °C ERE<br>PF [| [ TT [TT J fT TT tT ft tT tT tT yt tT L 25 °C, max es<br>a i 175 °C COCO Tea<br>175 °C, max<br>Ciss<br>EE eee S R atte tte:<br>Not tt TTT eA A<br>10 [3] Pee EEE EEE) | 10 [1] e e<br>[Jee_j__}_} ff ff fff} _f_}_} Seea<br>pt fT tT tt EE eee A<br>Na a COCO Ceo<br>v7 eee) Fee eee<br>Coss<br>& NSEC EEEEF | I < LECCE AT<br>PSN ef be]<br>10 [2] PINEEEEEEEL EEE | UE 10 [0]<br>Neb e eee pee SSmeesaces ss Sor aeScaaseceae<br>A ee<br>Pp | ft TT T— TNT tT tT tT tT tT tT Tt Tf See Seeee<br>OD COCO<br>p {| tt | | | PA tt Oe i<br>Crss<br>10 [1] 10 [-1]<br>0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>


Final Data Sheet 

7 

**OptiMOS[TM] BSC072N04LD** 

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**----- Start of picture text -----**<br>
10 [2] 10<br>——— ee TrT ppttLtLtl<br>i 8 V a<br>Se 20 V #1<br>a i 32 V pt |ge<br>8<br>CM CO CT Se Pt ttt tttSEtTetT tT ymCeftlf ft| | |<br>nnn Ane<br>10 [1] ef” ee Ae<br>Kt} FN EEE BSS E NS en 2<br>po TNT NTN t 6 “<br>25 °C<br>STS FrPrPrPfreft ts AYP<br>e -ON NS fs E<br><= LTT TTT EN a } ra 2la<br>PTT ANNE TNT 100 °C 4 eA<br>10 [0]<br>IN CUUINAS ay a<br>a ee ee ee eee Se<br>SSSa  Sees 150 °C | 2 e rit lA | Tt tteet<br>EHH<br>PTT EHH Eh | EE E<br>ET ACE<br>10 [-1] LEAN [EE] ET 0 SAREE<br>10 [0] 10 [1] 10 [2] 10 [3] 0 5 10 15 20 25 30 35 40<br>t AV [us] Q gate [nC]<br>I AS=f( t AV ); R GS =25 Ω  ; parameter: T j,start V GS=f( Q gate ), I D =20A pulsed, T j =25 °C; parameter: V DD<br>I AV V GS<br>**----- End of picture text -----**<br>


## **Diagram Gate charge waveforms** 

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**----- Start of picture text -----**<br>
44 TITTTIIT IIIT<br>POPC EEC Eee eee<br>PCOCECEEe<br>POPC EEC E eeeeeee eee eee<br>PCCP<br>43<br>POPPE ee ee eee eee Br<br>POCEPEEee Pee ee ee eee<br>PCOCECEEE eee [Eee]  ee ee eeeeet WC<br>POPPE EEE eee eee Ee<br>42 FCCC eee eeeWee<br>POPC EC EEEeee<br>PCOCECEEe eee WEEEeee<br>POPC EEE eee Eee<br>>= PCCCPEEeeeee Eee<br>41 POPC<br>POPPE APee EE<br>PCOCECEEE<br>POPC EC EECAEEA CEE<br>POCOACEP<br>SSeS Ae<br>40<br>SSeS ene4<br>SSS40<br>SSS eD4<br>PCCCPOEY<br>POCCCEC EeeEee eee e e<br>39<br>PCOCOAC EEE<br>FECAPOOLEEEEEEEEEEEe<br>Bap40S<br>38 POPC PELE eee ee Ft £1<br>-80 -40 0 40 80 120 160 200<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


Final Data Sheet 

8 

**OptiMOS[TM] -T2�Power�Transistor,�40�V BSC072N04LD** 

**==> picture [120 x 53] intentionally omitted <==**

## **5�����Package�Outlines** 

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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 0.90 1.10<br>A1 0.15 0.35<br>b 0.34 0.54<br>b1 0.02 0.22<br>D 4.95 5.35<br>D1 4.20 4.40<br>D2 0.50 0.70<br>E 5.95 6.35<br>E1 5.70 6.10<br>E2 4.075 4.275<br>E3 4.035 4.235<br>E4 0.15 0.35<br>e 1.27<br>L 0.45 0.65<br>M 0.45 0.65<br>Θ 8.5 ° 11.5 °<br>aaa 0.05<br>ddd 0.10<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00189767<br>REVISION<br>01<br>SCALE 5:1<br>0 1 2 3 4mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>31.07.2018<br>**----- End of picture text -----**<br>


## **Figure�1�����Outline�SSO8�dual�(TDSON-8-4),�dimensions�in�mm** 

Final Data Sheet 

9 

Rev.�2.0,��2018-12-11 

**OptiMOS[TM] BSC072N04LD** 

## BSC072N04LD 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2018-12-11|Release of final version|



## **Trademarks** 

## **erratum@infineon.com** 

## **Information** 

## **www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

10

Updated at June 9, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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