Image not available
Illustrative purposes only
BSC070N10NS5SCATMA1
Power MOSFET, N Channel, 100 V, 82 A, 6000 µohm, WSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: OptiMOS 5
- Qualification: -
- Power Dissipation: 100W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 100W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.006ohm
- Transistor Case Style: WSON
- Drain Source Voltage Vds: 100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 82A
- Drain Source On State Resistance: 6000µohm
- Automotive Qualification Standard: -
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.19 € |
| Current stock | 50+ |
| Lead time | 7 days |
Datasheet
**BSC070N10NS5SC**
## **MOSFET**
## **OptiMOS**
## **Features**
**==> picture [81 x 111] intentionally omitted <==**
**----- Start of picture text -----**<br>
PG-WSON-8-2<br>tab<br>5<br>6<br>7<br>8<br>4<br>3<br>2<br>1<br>**----- End of picture text -----**<br>
|**Parameter**<br>Fully qualified<br>~~Table~~ ~~1~~|**Parameter**<br>Fully qualified<br>~~Table~~ ~~1~~|**Value**<br>**Unit**<br>qualified according to JEDEC for Industrial Applications<br>~~Key Performance Parameters~~|**Value**<br>**Unit**<br>qualified according to JEDEC for Industrial Applications<br>~~Key Performance Parameters~~|**Value**<br>**Unit**<br>qualified according to JEDEC for Industrial Applications<br>~~Key Performance Parameters~~|
|---|---|---|---|---|
||_V_DS||100|V|
||_R_DS(on),max||7.0|mΩ|
||_I_D||82|A|
||_Q_oss||41|nC|
||_Q_G(0V..10V)||30|nC|
**==> picture [56 x 72] intentionally omitted <==**
**----- Start of picture text -----**<br>
Drain<br>Pin 5-8<br>Gate<br>Pin 4<br>ay<br>Source<br>Pin 1-3, tab<br>**----- End of picture text -----**<br>
|~~Type/OrderingCode|~~|**Package**<br>~~||__|~~|**Marking**<br>~~|__|~~Related|Related Links|
|---|---|---|---|
|BSC070N10NS5SC<br>~~Type/OrderingCode |~~|PG-WSON-8-2<br>~~|~~|070N10SC<br>|-<br>|
Final Data Sheet
1
**OptiMOS[TM�] 5�Power-Transistor,�100�V BSC070N10NS5SC**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.�2.0,��2019-11-19
**OptiMOS[TM�] 5�Power-Transistor,�100�V BSC070N10NS5SC**
**==> picture [120 x 53] intentionally omitted <==**
**1�����Maximum�ratings** at� _T_ A=25�°C,�unless�otherwise�specified
## **Table�2�����Maximum�ratings**
|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-|-<br>-<br>-|82<br>58<br>14|A|_V_GS=10V,_T_C=25°C1)<br>_V_GS=10V,_T_C=100°C<br>_V_GS=10V,_T_A=25°C,_R_thJA=50K/W2)|
|Pulsed drain current3)|_ID,pulse_|-|-|328|A|_T_C=25°C|
|Avalanche energy, single pulse4)|_E_AS|-|-|73|mJ|_I_D=50A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|-<br>-|100<br>3.0|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=50K/W3)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|175|°C|IEC climatic category;<br>DIN IEC 68-1: 55/175/56|
## **2�����Thermal�characteristics**
## **Table�3�����Thermal�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance, junction - case,<br>bottom|_R_thJC|-|0.9|1.5|K/W|-|
|Thermal resistance, junction - case,<br>top|_R_thJC|-|0.7|1.4|K/W|-|
|Device on PCB,<br>6 cm2cooling area2)|_R_thJA|-|-|50|K/W|-|
> 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental conditions.
> 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information
> 4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.�2.0,��2019-11-19
**OptiMOS[TM�] 5�Power-Transistor,�100�V BSC070N10NS5SC**
**==> picture [120 x 53] intentionally omitted <==**
## **3�����Electrical�characteristics**
at� _T_ j=25�°C,�unless�otherwise�specified
## **Table�4�����Static�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|100|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|2.2|3.0|3.8|V|_V_DS=_V_GS,_I_D=50µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|0.1<br>10|1<br>100|µA|_V_DS=100V,_V_GS=0V,_T_j=25°C<br>_V_DS=100V,_V_GS=0V,_T_j=125°C|
|Gate-source leakage current|_I_GSS|-|10|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|6.0<br>7.6|7.0<br>10.2|mΩ|_V_GS=10V,_I_D=40A<br>_V_GS=6V,_I_D=20A|
|Gate resistance|_R_G|-|1.0|1.5|Ω|-|
|Transconductance|_g_fs|39|78|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=40A|
## **Table�5�����Dynamic�characteristics**
|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|2100|2700|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|340|440|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Reverse transfer capacitance1)|Crss|-|16|28|pF|_V_GS=0V,_V_DS=50V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|13|-|ns|_V_DD=50V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Rise time|_t_r|-|5|-|ns|_V_DD=50V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Turn-off delay time|_t_d(off)|-|24|-|ns|_V_DD=50V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
|Fall time|_t_f|-|6|-|ns|_V_DD=50V,_V_GS=10V,_I_D=40A,<br>_R_G,ext=3Ω|
## **Table�6�����Gate�charge�characteristics[2)]**
|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|10|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to10V|
|Gate charge at threshold|_Q_g(th)|-|6|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to10V|
|Gate to drain charge1)|_Q_gd|-|6|10|nC|_V_DD=50V,_I_D=40A,_V_GS=0to10V|
|Switchingcharge|_Q_sw|-|10|-|nC|_V_DD=50V,_I_D=40A,_V_GS=0to10V|
|Gate charge total1)|_Q_g|-|30|38|nC|_V_DD=50V,_I_D=40A,_V_GS=0to10V|
|Gate plateau voltage|_V_plateau|-|4.8|-|V|_V_DD=50V,_I_D=40A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|26|-|nC|_V_DS=0.1V,_V_GS=0to10V|
|Output charge1)|_Q_oss|-|41|55|nC|_V_DD=50V,_V_GS=0V|
> 1) Defined by design. Not Subject to production test.
> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet
Rev.�2.0,��2019-11-19
4
**OptiMOS[TM�] 5�Power-Transistor,�100�V BSC070N10NS5SC**
**==> picture [120 x 53] intentionally omitted <==**
## **Table�7�����Reverse�diode**
|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|91|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|328|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.9|1.1|V|_V_GS=0V,_I_F=40A,_T_j=25°C|
|Reverse recoverytime1)|_t_rr|-|53|106|ns|_V_R=50V,_I_F=40A,d_i_F/d_t_=100A/µs|
|Reverse recoverycharge1)|_Q_rr|-|89|179|nC|_V_R=50V,_I_F=40A,d_i_F/d_t_=100A/µs|
1) Defined by design. Not Subject to production test. Final Data Sheet
Rev.�2.0,��2019-11-19
5
**OptiMOS BSC070N10NS5SC**
**==> picture [539 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
120 | | tf | ff 9080 |} | fy ty |<br>100<br>70<br>E N eee ~<br>80 eT \N Tt 60 aaNeeeeIN<br>EN ee 50 eee Nee<br>60<br>40<br>40 Pt TENET 30 ULL ENN<br>\<br>et yy EN | 20 eee<br>20<br>10<br>+N} Ey<br>0 TEEEEENE| 0 ELL E T<br>0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200<br>T C [°C] T C [°C]<br>[ P tot=f( T C) OSS I D=f( T C OV V GS ≥ —™—“‘éONN#ONNN<br>P tot I D<br>**----- End of picture text -----**<br>
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [3] 10 [1]<br>EH S S AEE<br>1 µs<br>10 [2] COMI SL 10 µs COT TR THE RE PE] EEE<br>10 [0]<br>Y 7 10 ms NEY 1 ms \ 100 µs ’ \ Lec 0.5 onoc erro<br>10 [1] 0.2<br>AN ee<br>F—F- EA INNEEA ENN EEE EH EEE - #1 0.1 i”- int<br>10 [-1]<br>0.05<br>10 [0]<br>fb a a EE 0.02 AY<br>ee A D(a 0.01<br>10 [-2]<br>10 [-1] ESS | single pulse MCU TT<br>DC<br>SEFES FHMC CUM CEM CCUMCENCE<br>10 [-2] eeECE CECTee 10 [-3] ETAL UII LETTE CLINI EEE LET<br>10 [-1] 10 [0] 10 [1] 10 [2] 10 [3] 10 [-6] 10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>V DS [V] t p [s]<br>I D=f( V DS T C D t p Z thJC=f( t p D = t p/ T<br>I D thJC<br>Z<br>**----- End of picture text -----**<br>
Final Data Sheet
6
**OptiMOS BSC070N10NS5SC**
**==> picture [528 x 633] intentionally omitted <==**
**----- Start of picture text -----**<br>
320 14<br>10 V 7 V<br>280 CEE) 12 BSE<br>5 V 5.5 V<br>240 6 V<br>10 /|<br>ee<br>2 A ee 2 eeee<br>200 SEPP OZ) eee 7 V<br>8<br>ze 160 PE|||ff7 eee 6 V fe —66>—<eeeeEe>EEEoe<br>10 V<br>4720 6 oe<br>120<br>EZ 5.5 V | Eee<br>4<br>haa) EEE<br>80<br>Y<br>ESE | ERREEEEEEEEEEE<br>5 V<br>2<br>40<br>JSS | EERE<br>0 fA | 0 eee<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 40 80 120 160 200 240 280 320<br>V DS [V] I D [A]<br>I D=f( V DS T j V GS R DS(on)=f( I D T j V GS<br>280 120<br>240 eee<br>| 100 er<br>200<br>A ||<br>80<br>SS<br>SD<br>160<br>60<br>120 | Cf<br>pf<br>40<br>rr |) PA<br>80<br>Ty | EA<br>ff<br>2 20<br>40<br>e 175 °C 25 °C e<br>0 pt | oy, | | 0 [_<br>0 2 4 6 8 0 20 40 60 80 100<br>V GS I D<br>[Vv] [A]<br>I D=f( V GS V DS|>2| I D| R DS(on)max T j g fs=f( I D T j<br>] Ω<br>I D<br>DS(on)<br>R<br>I D fs g<br>**----- End of picture text -----**<br>
Final Data Sheet
7
> **OptiMOS** ™ 5 **BSC070N10NS5SC**
**==> picture [528 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
2.4 5<br>POCCECCEELEELEEELELLELE<br>FEEL<br>2.0<br>COCRFCECECCECECELELEL ELLE EL 4 Pe] Ey} Ey Ed<br>FCECECCECECECCECEL ELLE<br>5 CoO Ll<br>1.6<br>s FCECECCECECELCEL EEL CELE as<br>ey ~~. 500 µA<br>3<br>@ PCOOOOCOCOe eee SS<br>3 1.2 LOO fe ] fy | 50 µA ee<br>8©ed COOOeeeyaAe 2 ] ] d NOK~<br>0.8<br>C ORREOPEECECECCECELELCELCeeCe eee eee ELL ] ty ty td ty NSN<br>FCECECCECECELCELPCCEECCECECELCEL ELLEELLE 1 Ty] PTT yyy<br>0.4 FCECECCECECELELEL ELLE<br>FCECECCECECL<br>FCECECCECECECCEC<br>FCECCCECEC ELEC ELL<br>0.0 FCECEC C ECECECCELELEELLE E LLE 0 ] td ty ty} yp by<br>-80 -40 0 40 80 120 160 200 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>R DS(on)=f( T j I D V GS V GS(th)=f( T j V GS= V DS<br>GS(th)<br>V<br>DS(on)<br>R<br>**----- End of picture text -----**<br>
**==> picture [527 x 283] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [4] 10 [3]<br>— : 25 °C ———————<br>a QO (| 25 °C, max PF | | | {| [| [[TT]<br>a ss ee ee [| 175 °C P| [| [| [| f ft ft ft<br>A " 175 °C, max a<br>ee eee PTTTT T | | tt lept tt<br>Ciss<br>10 [3] NE 10 [2] ELLE ELLA ee<br>so | es es es Qe GO OO A A QO (tS 0G 4<br>ac a Coss se esGs sO AY, YC”<br>a Koo NES _ ro | | | mt Te PY<br>A OO —<br>NN\ ee Pi tet LASa7eRnaia fT tl<br>10 [2] 10 [1]<br>——————_————— Se<br>a Ne es ss (| | | | | av | fle [fF | [| JT TT JT<br>a a es es a se ee re ee ee<br>A a<br>| | | Crss ee ee Pi | tt i ig EET ET<br>ef i]<br>10 [1] | ae RE 10 [0] a<br>0 20 40 60 80 100 0.0 0.5 1.0 1.5<br>V DS V SD<br>[Vv] [Vv]<br>C =f( V DS V GS f I F=f( V SD T j<br>C I F<br>**----- End of picture text -----**<br>
Final Data Sheet
8
**OptiMOS BSC070N10NS5SC**
**==> picture [526 x 634] intentionally omitted <==**
**----- Start of picture text -----**<br>
10 [2] 10<br>a CAPSa a a ee es eeSeeee eeee 9 e/a\/ 50 V<br>STOTT 25 °C HTT 87 TY |<br>10 [1] 20 V 80 V<br>100 °C<br>_x Pt S REEEESTTT T T SSEON EETSUNTEES SS NATEEESSEEEEH SSHTEENY a 65 eee,eefoJ| Sf<br>pt TY NENT ral 14<br>Co<br>4<br>150 °C<br>10 [0] EE TP fT<br> LTIN ELM TA R<br>3<br>== [SSE] PT Pt<br>ee|aaTTT CE EEEee eeTT* 21 FfAP}/ | fot| ffyd ffft<br>Co<br>10 [-1] ci cm} | 0 Ze<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40<br>t AV [us] Q gate [nC]<br>I AS=f( t AV R GS Ω T j(start) V GS=f( Q gate I D V DD<br>Diagram Gate charge waveforms<br>108<br>TLTELET LILI<br>106 TEEPE WP vce<br>PCE TA 2,<br>104 FCEL ELTA<br>FCEL ETAT<br>| 102 EEPer<br>= AT<br>TPO ALLL<br>100 FC OCA LELLLL<br>CCA ELLE<br>98 TATE ELL<br>ACL /<br>96 Ab<br>STEELE | Re [TT Qn<br>94 HEEL ELL 2. 7<br>-60 -20 20 60 100 140 180<br>T j [°C]<br>V BR(DSS)=f( T j I D<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>
Final Data Sheet
9
**OptiMOS[TM�] 5�Power-Transistor,�100�V BSC070N10NS5SC**
**==> picture [120 x 53] intentionally omitted <==**
## **5�����Package�Outlines**
**==> picture [439 x 357] intentionally omitted <==**
||||
|---|---|---|
|**DIMENSION**|**MILLIMETERS**<br>MIN.<br>MAX.||
|||MAX.|
|**A**|-|0.75|
|**A1**|-|0.05|
|**b**|0.35|0.45|
|**c**|0.203||
|**D**|4.95|5.05|
|**D1**|4.11|4.31|
|**D2**|3.03||
|**E**|5.95|6.05|
|**E1**|3.66|3.86|
|**E2**|4.11||
|**e**|1.27||
|**L1**|0.675|0.775|
|**L2**|0.625|0.825|
|**aaa**|0.05||
|**ddd**|0.10||
||||
**==> picture [99 x 189] intentionally omitted <==**
**----- Start of picture text -----**<br>
DOCUMENT NO.<br>Z8B00184589<br>REVISION<br>03<br>SCALE 10:1<br>0 1 2mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>03.06.2019<br>**----- End of picture text -----**<br>
## **Figure�1�����Outline�PG-WSON-8-2,�dimensions�in�mm**
Final Data Sheet
10
Rev.�2.0,��2019-11-19
**OptiMOS** 5 **BSC070N10NS5SC**
## BSC070N10NS5SC
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2019-11-19|Release of final version|
## **Trademarks**
## **erratum@infineon.com**
## **Information**
## **www.infineon.com** ).
## **Warnings**
Final Data Sheet
11
Updated at March 27, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →